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公开(公告)号：US5029322A
公开(公告)日：1991-07-02
申请号：US119354
申请日：1987-11-10
申请人： Josef Einzinger , Ludwig Leipold , Jenoe Tihanyi , Roland Weber
发明人： Josef Einzinger , Ludwig Leipold , Jenoe Tihanyi , Roland Weber
CPC分类号： H01L25/18 , H01L2924/0002
摘要： A power MOSFET composed of a plurality of individual MOSFETs connected in parallel, wherein an additional sensing MOSFET monitors the current in the power MOSFET. The sensing MOSFET has a surface comparatively smaller than the power MOSFET and is connected in parallel with the power MOSFET with a resistor between the source of the power MOSFET and the source of the sensing MOSFET. The sensing MOSFET and resistor are integrated with an integrated circuit provided for the control of the power MOSFET.
摘要翻译： 由并联连接的多个单独的MOSFET组成的功率MOSFET，其中附加的感测MOSFET监视功率MOSFET中的电流。 感测MOSFET具有比功率MOSFET更小的表面，并且与功率MOSFET并联连接，在功率MOSFET的源极和感测MOSFET的源极之间具有电阻。 感测MOSFET和电阻器与集成电路集成，用于功率MOSFET的控制。
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公开(公告)号：US4730228A
公开(公告)日：1988-03-08
申请号：US886577
申请日：1986-07-16
CPC分类号： G01K7/01 , G01K3/005 , H01L2924/0002 , Y10S323/907 , Y10T307/773
摘要： The temperature of the power semiconductor component is sensed by a bipolar transistor. The bipolar transistor is in series with a depletion mode MOSFET whose gate and source electrodes are connected together. The drain electrode is also connected to a threshold element. Normally, the FET has low impedance, so that at the input of the threshold element source potential, e.g. ground potential, is present. With current rising as a function of temperature, the current through the FET is limited to a constant, essentially temperature-independent value, and the potential at the input of the threshold element rises steeply. This condition is detected as an overtemperature signal.
摘要翻译： 功率半导体部件的温度由双极晶体管感测。 双极晶体管与其栅极和源极电极连接在一起的耗尽型MOSFET串联。 漏极电极也连接到阈值元件。 通常，FET具有低阻抗，使得在阈值元件源电位的输入处，例如， 地面电位存在。 随着电流随温度的升高而升高，通过FET的电流被限制在恒定的本质上与温度无关的值，并且阈值元件输入端的电位急剧上升。 该条件被检测为过热信号。
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公开(公告)号：US4728826A
公开(公告)日：1988-03-01
申请号：US886576
申请日：1986-07-16
IPC分类号： H03K17/04 , H03K17/0412 , H03K17/08 , H03K17/687 , H03K17/695
CPC分类号： H03K17/04123 , H03K17/687
摘要： The voltage peaks occuring upon disconnection of inductive loads are normally attenuated by a by-pass diode connected in parallel with the load. The driving countervoltage is thereby limited to the value of the forward voltage drop of the diode. For a power MOSFET with a source-side inductive load, the driving countervoltage is increased by placing a series connection of an additional MOSFET and a Zener diode between the gate of the power MOSFET and the connection of the load which is remote from the power MOSFET. The driving countervoltage at the source now becomes the Zener voltage plus the occuring gate-source voltage of the power MOSFET.
摘要翻译： 电感负载断开时出现的电压峰值通常与负载并联连接的旁路二极管衰减。 因此驱动逆变电压被限制为二极管正向压降的值。 对于具有源极电感负载的功率MOSFET，通过在功率MOSFET的栅极和远离功率MOSFET的负载的连接之间放置附加MOSFET和齐纳二极管的串联连接来提高驱动反电压 。 源极的驱动反电压现在变成齐纳电压加功率MOSFET的栅极 - 源极电压。
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公开(公告)号：US4691129A
公开(公告)日：1987-09-01
申请号：US886578
申请日：1986-07-16
IPC分类号： H03K17/00 , H03K17/0812 , H03K17/16 , H03K17/687 , G05F1/40 , H02H7/00 , H03K3/01
CPC分类号： H03K17/687 , H03K17/08122 , H03K17/165
摘要： When a power MOSFET operated as a source follower is driven by an electronic switch, an interruption of the connection between ground and the electronic switch may result in the output potential of the electronic switch to change so that the power MOSFET is partially switched on. This causes a considerable amount of power dissipation. Therefore, there is placed between the source and gate electrodes of the MOSFET a depletion MOSFET whose gate is connected to the terminal of the electronic switch intended for connection to ground. Thus, the power MOSFET remains non-conducting upon interruption of the connection between the electronic switch and ground.
摘要翻译： 当作为源极跟随器工作的功率MOSFET由电子开关驱动时，接地和电子开关之间的连接中断可能导致电子开关的输出电位发生变化，从而使功率MOSFET部分接通。 这导致相当大的功率消耗。 因此，放置在MOSFET的源极和栅极电极之间，其栅极连接到用于连接到地的电子开关的端子的耗尽MOSFET。 因此，功率MOSFET在电子开关和地之间的连接断开时保持不导通。
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公开(公告)号：US4677325A
公开(公告)日：1987-06-30
申请号：US872354
申请日：1986-06-09
IPC分类号： H03K17/687 , H03K19/0944 , H03K19/0948 , H03K17/16 , H03K19/094 , H03K19/20
CPC分类号： H03K17/6872 , H03K19/09446 , H03K19/0948
摘要： A switching circuit includes two series-connected MOSFET (1, 6) complementing one another, which are interconnected at the drain terminal of each device. The gate terminal of the MOSFET that is grounded is connected to a control input terminal (E). This gate terminal is also connected to the source terminal of a depletion FET (7). The drain terminal of the depletion FET (7) is connected to the gate terminal of the second MOSFET (6) and, in turn, is connected via a resistor (8) to a voltage source (+U). The gate terminal of the depletion FET (7) is grounded. The load (5) is then connected to the drain side of the complementary MOSFET. When the switch is in a blocking condition, the cross current is thus prevented from flowing; and the FET connected to voltage can be completely activated.
摘要翻译： 开关电路包括彼此互补的两个串联连接的MOSFET（1,6），它们在每个器件的漏极端子处互连。 接地的MOSFET的栅极端子连接到控制输入端子（E）。 该栅极端子也连接到耗尽FET（7）的源极端子。 耗尽FET（7）的漏极端子连接到第二MOSFET（6）的栅极端子，并且又通过电阻器（8）连接到电压源（+ U）。 耗尽FET（7）的栅极端子接地。 负载（5）然后连接到互补MOSFET的漏极侧。 当开关处于阻塞状态时，防止交叉电流流动; 连接到电压的FET可以被完全激活。
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6.发明授权
公开(公告)号：US5086364A
公开(公告)日：1992-02-04
申请号：US657291
申请日：1991-02-19
申请人： Ludwig Leipold , Rainald Sander , Jenoe Tihanyi , Roland Weber
发明人： Ludwig Leipold , Rainald Sander , Jenoe Tihanyi , Roland Weber
IPC分类号： G01R31/02 , H03K17/082
CPC分类号： H03K17/0822 , G01R31/025
摘要： The voltage (U.sub.DS) on a power MOSFET (1) is compared with a voltage (U.sub.V) derived from the sum of the voltages of a Zener diode (3) and the threshold voltage (U.sub.T) of a second MOSFET (5) to detect a short circuit in a load (2) in series with the power MOSFET (1). When this total voltage is exceeded, the second MOSFET conducts. Its load current is then evaluated as the short circuit signal.
摘要翻译： 功率MOSFET（1）上的电压（UDS）与从齐纳二极管（3）的电压和第二MOSFET（5）的阈值电压（UT）之和导出的电压（UV）进行比较，以检测 与功率MOSFET（1）串联的负载（2）中的短路。 当超过该总电压时，第二个MOSFET导通。 然后将其负载电流评估为短路信号。
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7.发明授权Circuit for detecting the failure of a load which is connected in series with an electronic switch 失效用于检测与电子开关串联连接的负载故障的电路
公开(公告)号：US5266840A
公开(公告)日：1993-11-30
申请号：US999687
申请日：1992-12-31
申请人： Ludwig Leipold , Rainald Sander , Jenoe Tihanyi , Roland Weber
发明人： Ludwig Leipold , Rainald Sander , Jenoe Tihanyi , Roland Weber
CPC分类号： H05B37/03 , B60Q11/005 , G01R31/024 , Y10T307/826
摘要： A circuit for detecting the non-operating condition of a load which is connected in series with an electronic switch wherein a comparator has a first input which is connected to the junction point between the load and the electronic switch and has a second input which is a reference voltage such that when the load fails the comparator produces an output to indicate such condition and wherein the reference voltage is lower than the normal voltage when the load is operating properly and is higher than when the load is in the inoperative condition.
摘要翻译： 一种用于检测与电子开关串联连接的负载的非工作状态的电路，其中比较器具有连接到负载和电子开关之间的连接点的第一输入端，并且具有第二输入端 参考电压使得当负载故障时，比较器产生用于指示这种状况的输出，并且其中当负载正常工作时，参考电压低于正常电压，并且高于负载处于不工作状态时的参考电压。
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8.发明授权
公开(公告)号：US4952827A
公开(公告)日：1990-08-28
申请号：US438342
申请日：1989-11-15
申请人： Ludwig Leipold , Rainald Sander , Jenoe Tihanyi , Roland Weber , Nance: Paul
发明人： Ludwig Leipold , Rainald Sander , Jenoe Tihanyi , Roland Weber , Nance: Paul
IPC分类号： H03K17/08 , H03K17/06 , H03K17/082
CPC分类号： H03K17/0822 , H03K17/063
摘要： A circuit arrangement for controlling load current of a power MOSFET wherein the load is connected at the source terminal includes a second FET having a defined threshold voltage connected with its drain-source path inserted between the gate and source of the power MOSFET. A third FET connects the gate terminal of the second FET to the drain voltage of the power MOSFET when the power MOSFET is in the conductive condition. When the drain-source voltage of the power MOSFET becomes higher than the threshold voltage of the second FET, the second FET becomes conductive and drives the gate-source voltage of the power MOSFET down.
摘要翻译： 用于控制功率MOSFET的负载电流的电路装置，其中负载在源极端子处连接包括具有限定的阈值电压的第二FET，该阈值电压与插入在功率MOSFET的栅极和源极之间的漏极 - 源极路径连接。 当功率MOSFET处于导通状态时，第三FET将第二FET的栅极端子连接到功率MOSFET的漏极电压。 当功率MOSFET的漏源电压变得高于第二FET的阈值电压时，第二FET变为导通状态，并将功率MOSFET的栅极 - 源极电压降低。
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公开(公告)号：US5172290A
公开(公告)日：1992-12-15
申请号：US382523
申请日：1989-07-20
申请人： Ludwig Leipold , Jenoe Tihanyi , Roland Weber , Rainald Sander
发明人： Ludwig Leipold , Jenoe Tihanyi , Roland Weber , Rainald Sander
IPC分类号： H01L29/78 , H01L27/02 , H01L27/04 , H03K17/0812
CPC分类号： H03K17/08122 , H01L27/0251
摘要： The gate-source capacitance of a power MOSFET (1) can be protected against positive and negative excess voltages by two integrated Zener diodes (3, 4) the anodes of which are coupled to each other and the cathodes of which are respectively coupled to the gate and source terminals of the power MOSFET. However, when a control voltage is applied, the parasitic bipolar transistor associated with one of the Zener diodes is switched on and prevents the MOSFET from completely switching on. The parasitic bipolar transistor is rendered harmless by the fact that the anode terminal is coupled to a source terminal (S) MOSFET (1) when a gate-source voltage is applied.
摘要翻译： 功率MOSFET（1）的栅极 - 源极电容可以通过两个集成的齐纳二极管（3,4）被保护，以防止正和负的过剩电压，它们的阳极彼此耦合，并且阴极分别耦合到 功率MOSFET的栅极和源极端子。 然而，当施加控制电压时，与齐纳二极管之一相关联的寄生双极晶体管导通，并防止MOSFET完全导通。 当施加栅极 - 源极电压时，寄生双极晶体管由于阳极端子耦合到源极端子（S）MOSFET（1）的事实而变得无害。
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10.发明授权
公开(公告)号：US4875131A
公开(公告)日：1989-10-17
申请号：US342835
申请日：1989-04-25
申请人： Ludwig Leipold , Rainald Sander , Jenoe Tihanyi , Roland Weber
发明人： Ludwig Leipold , Rainald Sander , Jenoe Tihanyi , Roland Weber
IPC分类号： H01L23/58 , G01K7/01 , G05F1/10 , H01L21/8222 , H01L27/06 , H02H5/04 , H03K17/08 , H03K17/14
CPC分类号： H02H5/044 , G01K7/01 , H01L2924/0002
摘要： A circuit for monitoring the temperature of a semiconductor structural component. The circuit includes a bipolar transistor (1) in thermal contact with a semiconductor structural element to be monitored, and a MOSFET (11) connected in series with a current source (12). The MOSFET (11) is maintained in a nonconducting state with two Zener diodes (13, 14) if the bipolar transistor (1) is the standard operating temperature of the semiconductor structural element. This circuit provides for a reduced zero current signal. The current flowing through the bipolar transistor (1) increases with temperature and the gate-source voltage of the MOSFET (11) is increases until it switches off. If the current flowing through the MOSFET (11) is greater than the impressed current of the current source (12) the potential across the current source takes a step increase a value near the supply voltage (V.sub.DD). This voltage step can then be detected as an excess-temperature signal.
摘要翻译： 一种用于监测半导体结构部件的温度的电路。 电路包括与待监控的半导体结构元件热接触的双极晶体管（1）和与电流源（12）串联连接的MOSFET（11）。 如果双极晶体管（1）是半导体结构元件的标准工作温度，则MOSFET（11）保持在具有两个齐纳二极管（13,14）的非导通状态。 该电路提供减少的零电流信号。 流过双极晶体管（1）的电流随着温度而升高，并且MOSFET（11）的栅极 - 源极电压增加直至其断开。 如果流过MOSFET（11）的电流大于电流源（12）的外加电流，电流源两端的电位会在电源电压（VDD）附近逐步增加一个值。 然后可以将该电压步骤检测为过温信号。
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