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公开(公告)号：US07993950B2
公开(公告)日：2011-08-09
申请号：US12266457
申请日：2008-11-06
申请人： Joseph Damian Gordon Lacey , Mickael Renault , Vikram Joshi , James F. Bobey , Robertus P. Van Kampen
发明人： Joseph Damian Gordon Lacey , Mickael Renault , Vikram Joshi , James F. Bobey , Robertus P. Van Kampen
CPC分类号： B81C1/00333 , B81C2203/0145 , B81C2203/0154
摘要： Embodiments discussed herein generally include methods of fabricating MEMS devices within a structure. The MEMS device may be formed in a cavity above the structure, and additional metallization may occur above the MEMS device. The cavity may be formed by depositing an encapsulating layer over the sacrificial layers that enclose the MEMS device. The encapsulating layer may then be etched to expose portions of the sacrificial layers. The sacrificial layers are exposed because they extend through the sidewalls of the encapsulating layer. Therefore, no release holes are etched through the top of the encapsulating layer. An etchant then removes the sacrificial layers to free the MEMS device and form the cavity and an opening through the sidewall of the encapsulating layer. Another encapsulating layer may then be deposited to seal the cavity and the opening.
摘要翻译： 本文讨论的实施例通常包括在结构内制造MEMS器件的方法。 MEMS器件可以形成在结构上方的空腔中，并且可以在MEMS器件上方发生额外的金属化。 空腔可以通过在包围MEMS器件的牺牲层上沉积封装层来形成。 然后可以蚀刻封装层以暴露部分牺牲层。 牺牲层被暴露，因为它们延伸穿过封装层的侧壁。 因此，没有通过封装层的顶部蚀刻释放孔。 然后，蚀刻剂去除牺牲层以释放MEMS器件并形成空腔和通过封装层的侧壁的开口。 然后可以沉积另外的封装层以密封空腔和开口。
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公开(公告)号：US20090275163A1
公开(公告)日：2009-11-05
申请号：US12266457
申请日：2008-11-06
申请人： Joseph Damian Gordon Lacey , Mickael Renault , Vikram Joshi , James F. Bobey , Robertus P. Van Kampen
发明人： Joseph Damian Gordon Lacey , Mickael Renault , Vikram Joshi , James F. Bobey , Robertus P. Van Kampen
IPC分类号： H01L21/56
CPC分类号： B81C1/00333 , B81C2203/0145 , B81C2203/0154
摘要： Embodiments discussed herein generally include methods of fabricating MEMS devices within a structure. The MEMS device may be formed in a cavity above the structure, and additional metallization may occur above the MEMS device. The cavity may be formed by depositing an encapsulating layer over the sacrificial layers that enclose the MEMS device. The encapsulating layer may then be etched to expose portions of the sacrificial layers. The sacrificial layers are exposed because they extend through the sidewalls of the encapsulating layer. Therefore, no release holes are etched through the top of the encapsulating layer. An etchant then removes the sacrificial layers to free the MEMS device and form the cavity and an opening through the sidewall of the encapsulating layer. Another encapsulating layer may then be deposited to seal the cavity and the opening.
摘要翻译： 本文讨论的实施例通常包括在结构内制造MEMS器件的方法。 MEMS器件可以形成在结构上方的空腔中，并且可以在MEMS器件上方发生额外的金属化。 空腔可以通过在包围MEMS器件的牺牲层上沉积封装层来形成。 然后可以蚀刻封装层以暴露部分牺牲层。 牺牲层被暴露，因为它们延伸穿过封装层的侧壁。 因此，没有通过封装层的顶部蚀刻释放孔。 然后，蚀刻剂去除牺牲层以释放MEMS器件并形成空腔和通过封装层的侧壁的开口。 然后可以沉积另外的封装层以密封空腔和开口。
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公开(公告)号：US20130032453A1
公开(公告)日：2013-02-07
申请号：US13565693
申请日：2012-08-02
申请人： Brian I. Troy , Mickael Renault , Thomas L. Maguire , Joseph Damian Gordon Lacey , James F. Bobey
发明人： Brian I. Troy , Mickael Renault , Thomas L. Maguire , Joseph Damian Gordon Lacey , James F. Bobey
CPC分类号： B81C1/00484 , B81B3/0008 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81C2201/0108 , H01H1/0036 , H01H2001/0089
摘要： The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.
摘要翻译： 本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。 粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料上。 粘附促进剂与牺牲材料一起被去除。 然而，粘合促进剂在去除时将硅基残留物留在空腔内。 发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。 保留在基材的其余部分上的粘合促进剂足以将牺牲材料粘附到基材上，而不用担心牺牲材料分层。 因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。
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公开(公告)号：US08921165B2
公开(公告)日：2014-12-30
申请号：US13565693
申请日：2012-08-02
申请人： Brian I. Troy , Mickael Renault , Thomas L. Maguire , Joseph Damian Gordon Lacey , James F. Bobey
发明人： Brian I. Troy , Mickael Renault , Thomas L. Maguire , Joseph Damian Gordon Lacey , James F. Bobey
IPC分类号： H01L21/82 , H01L21/66 , G01R31/26 , H01L21/00 , H01L23/28 , G01P15/08 , H01L21/70 , B81C1/00 , H01H1/00
CPC分类号： B81C1/00484 , B81B3/0008 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81C2201/0108 , H01H1/0036 , H01H2001/0089
摘要： The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.
摘要翻译： 本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。 粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料上。 粘附促进剂与牺牲材料一起被去除。 然而，粘合促进剂在去除时将硅基残留物留在空腔内。 发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。 保留在基材的其余部分上的粘合促进剂足以将牺牲材料粘附到基材上，而不用担心牺牲材料分层。 因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。
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公开(公告)号：US08513043B2
公开(公告)日：2013-08-20
申请号：US13349696
申请日：2012-01-13
IPC分类号： H01L21/00
CPC分类号： B81B3/0072 , B81B2203/0118 , B81B2203/0307 , B81B2207/096 , B81C1/00039 , B81C1/00333 , B81C1/00476 , B81C2201/0132 , B81C2201/014 , B81C2203/0145 , B81C2203/0714
摘要： The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.
摘要翻译： 本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。 与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。 薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。 蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。 此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。
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公开(公告)号：US20120181638A1
公开(公告)日：2012-07-19
申请号：US13349696
申请日：2012-01-13
CPC分类号： B81B3/0072 , B81B2203/0118 , B81B2203/0307 , B81B2207/096 , B81C1/00039 , B81C1/00333 , B81C1/00476 , B81C2201/0132 , B81C2201/014 , B81C2203/0145 , B81C2203/0714
摘要： The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.
摘要翻译： 本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。 与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。 薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。 蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。 此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。
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公开(公告)号：US20110212593A1
公开(公告)日：2011-09-01
申请号：US13036201
申请日：2011-02-28
IPC分类号： H01L21/02
CPC分类号： B81C1/00095 , B81B2203/04 , B81B2207/07 , B81C1/00611 , B81C2201/0104
摘要： The present invention generally relates to the formation of a micro-electromechanical system (MEMS) cantilever switch in a complementary metal oxide semiconductor (CMOS) back end of the line (BEOL) process. The cantilever switch is formed in electrical communication with a lower electrode in the structure. The lower electrode may be either blanket deposited and patterned or simply deposited in vias or trenches of the underlying structure. The excess material used for the lower electrode is then planarized by chemical mechanical polishing or planarization (CMP). The cantilever switch is then formed over the planarized lower electrode.
摘要翻译： 本发明一般涉及在线路（BEOL）工艺的互补金属氧化物半导体（CMOS）后端中形成微机电系统（MEMS）悬臂开关。 悬臂开关形成为与结构中的下电极电连通。 下电极可以是毯式沉积和图案化或简单地沉积在底层结构的通孔或沟槽中。 然后通过化学机械抛光或平面化（CMP）将用于下电极的多余材料平坦化。 然后在平坦化的下电极上形成悬臂开关。
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公开(公告)号：US08124527B2
公开(公告)日：2012-02-28
申请号：US13036201
申请日：2011-02-28
IPC分类号： H01L21/4763
CPC分类号： B81C1/00095 , B81B2203/04 , B81B2207/07 , B81C1/00611 , B81C2201/0104
摘要： The present invention generally relates to the formation of a micro-electromechanical system (MEMS) cantilever switch in a complementary metal oxide semiconductor (CMOS) back end of the line (BEOL) process. The cantilever switch is formed in electrical communication with a lower electrode in the structure. The lower electrode may be either blanket deposited and patterned or simply deposited in vias or trenches of the underlying structure. The excess material used for the lower electrode is then planarized by chemical mechanical polishing or planarization (CMP). The cantilever switch is then formed over the planarized lower electrode.
摘要翻译： 本发明一般涉及在线路（BEOL）工艺的互补金属氧化物半导体（CMOS）后端中形成微机电系统（MEMS）悬臂开关。 悬臂开关形成为与结构中的下电极电连通。 下电极可以是毯式沉积和图案化或简单地沉积在底层结构的通孔或沟槽中。 然后通过化学机械抛光或平面化（CMP）将用于下电极的多余材料平坦化。 然后在平坦化的下电极上形成悬臂开关。
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9.发明授权Fabrication of MEMS based cantilever switches by employing a split layer cantilever deposition scheme 有权采用分层悬臂沉积方案制造基于MEMS的悬臂开关公开(公告)号：US08957485B2
公开(公告)日：2015-02-17
申请号：US12357340
申请日：2009-01-21
CPC分类号： B81B3/007 , B81B2201/014 , B81B2203/0118 , H01L41/094
摘要： Embodiments discussed herein generally disclose novel alternative methods that can be employed to overcome the gradient stress formed in refractory materials to be used for thin film MEMS cantilever switches. The use of a ‘split layer’ cantilever fabrication method, as described herein enables thin film MEMS cantilever switches to be fabricated resulting in low operating voltage devices while maintaining the mechanical rigidity of the landing portion of the final fabricated cantilever switch.
摘要翻译： 本文讨论的实施方案通常公开了可用于克服在用于薄膜MEMS悬臂开关的难熔材料中形成的梯度应力的新型替代方法。 如本文所述使用“分裂层”悬臂制造方法，可以制造薄膜MEMS悬臂开关，从而产生低工作电压装置，同时保持最终制造的悬臂开关的着陆部分的机械刚性。
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