Ion implant ion beam parallelism and direction integrity determination and adjusting
    3.
    发明申请
    Ion implant ion beam parallelism and direction integrity determination and adjusting 审中-公开
    离子注入离子束平行度和方向完整性确定和调整

    公开(公告)号:US20060169922A1

    公开(公告)日:2006-08-03

    申请号:US11246410

    申请日:2005-10-07

    IPC分类号: H01J37/08

    摘要: A system, method and program product for controlling parallelism and/or direction integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes multiple faraday cups to measure a profile of at least a portion of the ion beam. The results of the measurement are then processed to determine parallelism and/or direction integrity of the ion beam. The results of the parallelism and/or direction integrity determination are then used to adjust the ion implanter system operating parameters to control parallelism and the direction of the ion beam.

    摘要翻译: 公开了一种用于控制由离子注入机系统产生的离子束的并行性和/或方向完整性的系统,方法和程序产品。 本发明利用多个法拉第杯来测量离子束的至少一部分的轮廓。 然后处理测量结果以确定离子束的平行度和/或方向完整性。 然后使用平行度和/或方向完整性确定的结果来调整离子注入系统的操作参数以控制离子束的平行度和方向。

    Technique for uniformity tuning in an ion implanter system
    4.
    发明申请
    Technique for uniformity tuning in an ion implanter system 有权
    离子注入机系统均匀性调整技术

    公开(公告)号:US20060266957A1

    公开(公告)日:2006-11-30

    申请号:US11135307

    申请日:2005-05-24

    IPC分类号: H01J37/302

    摘要: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.

    摘要翻译: 公开了一种用于离子注入机系统中均匀性调谐的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于离子注入机系统中的均匀性调谐的方法。 该方法可以包括在沿着光束路径的多个预定位置处测量离子束。 该方法还可以包括至少部分地基于多个预定位置处的离子束测量来计算沿着光束路径的离子束分布。 该方法可以进一步包括至少部分地基于所计算的离子束分布来确定沿着光束路径的期望速度分布,使得当根据期望的速度分布扫描时,离子束沿着光束路径产生期望的离子束分布 。

    Technique for tuning an ion implanter system
    5.
    发明申请
    Technique for tuning an ion implanter system 有权
    调整离子注入机系统的技术

    公开(公告)号:US20060249696A1

    公开(公告)日:2006-11-09

    申请号:US11123082

    申请日:2005-05-06

    IPC分类号: H01J37/302 H01J37/317

    摘要: A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.

    摘要翻译: 公开了一种用于调整离子注入机系统的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于调整具有多个光束线元件的离子注入系统的方法。 该方法可以包括在多个波束线元件之间建立一个或多个关系。 该方法还可以包括至少部分地基于一个或多个已建立的关系以协调的方式调整多个光束线元件以产生期望的光束输出。

    Ion beam implant current, spot width and position tuning
    6.
    发明申请
    Ion beam implant current, spot width and position tuning 有权
    离子束注入电流,光斑宽度和位置调整

    公开(公告)号:US20060076510A1

    公开(公告)日:2006-04-13

    申请号:US10960904

    申请日:2004-10-07

    IPC分类号: H01J37/317

    摘要: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

    摘要翻译: 公开了用于调整离子注入机系统的离子束调谐方法,系统和程序产品。 本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统,以根据离子束轮廓最大化估计的注入电流,以同时优化总离子束电流和离子束斑点宽度,并最大化注入电流。 此外,调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束,其通过减少离子束建立时间改善离子注入系统的生产率和性能,并为每个离子提供可重复的射束角度性能 横跨许多设置。

    Technique for uniformity tuning in an ion implanter system
    7.
    发明授权
    Technique for uniformity tuning in an ion implanter system 有权
    离子注入机系统均匀性调整技术

    公开(公告)号:US07253423B2

    公开(公告)日:2007-08-07

    申请号:US11135307

    申请日:2005-05-24

    IPC分类号: H01J37/302

    摘要: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.

    摘要翻译: 公开了一种用于离子注入机系统中均匀性调谐的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于离子注入机系统中的均匀性调谐的方法。 该方法可以包括在沿着光束路径的多个预定位置处测量离子束。 该方法还可以包括至少部分地基于多个预定位置处的离子束测量来计算沿着光束路径的离子束分布。 该方法可以进一步包括至少部分地基于所计算的离子束分布来确定沿着光束路径的期望速度分布,使得当根据期望的速度分布扫描时,离子束沿着光束路径产生期望的离子束分布 。

    Technique for tuning an ion implanter system
    10.
    发明授权
    Technique for tuning an ion implanter system 有权
    调整离子注入机系统的技术

    公开(公告)号:US07397047B2

    公开(公告)日:2008-07-08

    申请号:US11123082

    申请日:2005-05-06

    IPC分类号: H01J37/302

    摘要: A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.

    摘要翻译: 公开了一种用于调整离子注入机系统的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于调整具有多个光束线元件的离子注入系统的方法。 该方法可以包括在多个波束线元件之间建立一个或多个关系。 该方法还可以包括至少部分地基于一个或多个已建立的关系以协调的方式调整多个光束线元件以产生期望的光束输出。