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公开(公告)号：US07355188B2
公开(公告)日：2008-04-08
申请号：US11300425
申请日：2005-12-15
申请人： Joseph C. Olson , Jonathan Gerald England , Morgan D. Evans , Douglas Thomas Fielder , Gregg Alexander Norris , Shengwu Chang , Damian Brennan , William Gray Callahan
发明人： Joseph C. Olson , Jonathan Gerald England , Morgan D. Evans , Douglas Thomas Fielder , Gregg Alexander Norris , Shengwu Chang , Damian Brennan , William Gray Callahan
IPC分类号： H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/24542 , H01J2237/30483 , H01J2237/31703
摘要： A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.
摘要翻译： 公开了一种用于离子注入机系统中均匀性调谐的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于离子束均匀性调谐的方法。 该方法可以包括在离子注入机系统中产生离子束。 该方法还可以包括调整离子注入系统中的一个或多个束线元件，以便当沿着光束路径扫描离子束时，减小离子束的束斑的变化。 该方法还可以包括调整用于沿着光束路径扫描离子束的速度分布，使得离子束沿着光束路径产生基本均匀的离子束分布。
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公开(公告)号：US07176470B1
公开(公告)日：2007-02-13
申请号：US11313714
申请日：2005-12-22
IPC分类号： H01J21/265
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/24542 , H01J2237/30483 , H01J2237/31703
摘要： A technique for high-efficiency ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for high-efficiency ion implantation. The apparatus may comprise one or more measurement devices to determine a shape of an ion beam spot in a first dimension and a second dimension. The apparatus may also comprise a control module to control movement of the ion beam across a substrate according to a two-dimensional velocity profile, wherein the two-dimensional velocity profile is determined based at least in part on the shape of the ion beam spot, and wherein the two-dimensional velocity profile is tunable to maintain a uniform ion dose and to keep the ion beam spot from going fully off the substrate surface.
摘要翻译： 公开了一种用于高效离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于高效率离子注入的装置。 该装置可以包括一个或多个测量装置，以确定第一维度和第二维度中的离子束斑点的形状。 该装置还可以包括控制模块，用于根据二维速度分布来控制离子束跨越衬底的运动，其中至少部分地基于离子束点的形状来确定二维速度分布， 并且其中所述二维速度分布是可调谐的，以保持均匀的离子剂量并且保持离子束点不完全离开衬底表面。
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公开(公告)号：US20080105828A1
公开(公告)日：2008-05-08
申请号：US11733973
申请日：2007-04-11
申请人： Christopher R. HATEM , Jay Thomas SCHEUER , Russell J. LOW , Morgan D. Evans , Jonathan Gerald ENGLAND
发明人： Christopher R. HATEM , Jay Thomas SCHEUER , Russell J. LOW , Morgan D. Evans , Jonathan Gerald ENGLAND
CPC分类号： C23C14/48 , C01B3/0026 , C01B3/0031 , C01B3/0036 , C01B3/0047 , C01B3/0068 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/31705 , Y02E60/327
摘要： Techniques for removing molecular fragments from an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for removing molecular fragments from an ion implanter. The apparatus may comprise a supply mechanism configured to couple to an ion source chamber and to supply a feed material to the ion source chamber. The apparatus may also comprise one or more hydrogen-absorbing materials placed in a flow path of the feed material, to prevent at least one portion of hydrogen-containing molecular fragments in the feed material from entering the ion source chamber.
摘要翻译： 公开了从离子注入机去除分子碎片的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于从离子注入机去除分子碎片的装置。 该装置可以包括配置成耦合到离子源室并且将进料材料供应到离子源室的供给机构。 该装置还可以包括放置在进料材料的流动路径中的一种或多种吸氢材料，以防止进料中至少一部分含氢分子碎片进入离子源室。
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4.发明申请公开(公告)号：US20080073584A1
公开(公告)日：2008-03-27
申请号：US11692951
申请日：2007-03-29
申请人： William G. Callahan , Morgan D. Evans , George M. Gammel , Norman E. Hussey , Gregg A. Norris , Joseph C. Olson
发明人： William G. Callahan , Morgan D. Evans , George M. Gammel , Norman E. Hussey , Gregg A. Norris , Joseph C. Olson
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/31703
摘要： An ion beam current uniformity monitor, ion implanter and related method are disclosed. In one embodiment, the ion beam current uniformity monitor includes an ion beam current measurer including a plurality of measuring devices for measuring a current of an ion beam at a plurality of locations; and a controller for maintaining ion beam current uniformity based on the ion beam current measurements by the ion beam current measurer.
摘要翻译： 公开了一种离子束电流均匀性监测器，离子注入机及相关方法。 在一个实施例中，离子束电流均匀性监测器包括离子束电流测量器，其包括用于测量多个位置处的离子束电流的多个测量装置; 以及基于离子束电流测量器的离子束电流测量来维持离子束电流均匀性的控制器。
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5.发明授权公开(公告)号：US07663125B2
公开(公告)日：2010-02-16
申请号：US11692951
申请日：2007-03-29
申请人： William G. Callahan , Morgan D. Evans , George M. Gammel , Norman E. Hussey , Gregg A. Norris , Joseph C. Olson
发明人： William G. Callahan , Morgan D. Evans , George M. Gammel , Norman E. Hussey , Gregg A. Norris , Joseph C. Olson
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/31703
摘要： An ion beam current uniformity monitor, ion implanter and related method are disclosed. In one embodiment, the ion beam current uniformity monitor includes an ion beam current measurer including a plurality of measuring devices for measuring a current of an ion beam at a plurality of locations; and a controller for maintaining ion beam current uniformity based on the ion beam current measurements by the ion beam current measurer.
摘要翻译： 公开了一种离子束电流均匀性监测器，离子注入机及相关方法。 在一个实施例中，离子束电流均匀性监测器包括离子束电流测量器，其包括用于测量多个位置处的离子束电流的多个测量装置; 以及基于离子束电流测量器的离子束电流测量来维持离子束电流均匀性的控制器。
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公开(公告)号：US08969181B2
公开(公告)日：2015-03-03
申请号：US13440616
申请日：2012-04-05
IPC分类号： H01L21/205 , H01L21/02 , H01L21/265 , H01L21/266
CPC分类号： H01L21/02658 , H01L21/02381 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/26506 , H01L21/26586 , H01L21/266
摘要： Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing.
摘要翻译： 氧，硅，锗，碳或氮被选择性地植入到工件中。 将工件退火以将离子结合到工件中。 然后在工件上形成化合物半导体。 例如，可以在硅，碳化硅或蓝宝石工件上形成氮化镓。 注入区域的宽度可被配置为补偿退火期间的任何收缩。
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公开(公告)号：US20120276658A1
公开(公告)日：2012-11-01
申请号：US13440678
申请日：2012-04-05
申请人： Ludovic Godet , Morgan D. Evans , Chi-Chun Chen
发明人： Ludovic Godet , Morgan D. Evans , Chi-Chun Chen
IPC分类号： H01L21/302
CPC分类号： H01L21/30621 , H01L21/30612 , H01L33/007 , H01L33/0095 , H01L43/12
摘要： A workpiece is implanted to a first depth to form a first amorphized region. This amorphized region is then etched to the first depth. After etching, the workpiece is implanted to a second depth to form a second amorphized region below a location of the first amorphized region. The second amorphized region is then etched to the second depth. The implant and etch steps may be repeated until structure is formed to the desired depth. The workpiece may be, for example, a compound semiconductor, such as GaN, a magnetic material, silicon, or other materials.
摘要翻译： 将工件植入第一深度以形成第一非晶化区域。 然后将该非晶化区域蚀刻到第一深度。 在蚀刻之后，将工件植入第二深度以在第一非晶化区域的位置下方形成第二非晶化区域。 然后将第二非晶区域蚀刻到第二深度。 可以重复植入和蚀刻步骤，直到形成结构为期望的深度。 工件可以是例如化合物半导体，例如GaN，磁性材料，硅或其它材料。
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公开(公告)号：US20120258583A1
公开(公告)日：2012-10-11
申请号：US13440616
申请日：2012-04-05
CPC分类号： H01L21/02658 , H01L21/02381 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/26506 , H01L21/26586 , H01L21/266
摘要： Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing.
摘要翻译： 氧，硅，锗，碳或氮被选择性地植入到工件中。 将工件退火以将离子结合到工件中。 然后在工件上形成化合物半导体。 例如，氮化镓可以形成在硅，碳化硅或蓝宝石工件上。 注入区域的宽度可被配置为补偿退火期间的任何收缩。
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公开(公告)号：US07521691B2
公开(公告)日：2009-04-21
申请号：US11608595
申请日：2006-12-08
CPC分类号： G01R33/07 , B82Y25/00 , G01R19/0061 , G01R33/093 , H01J37/244 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24535 , H01J2237/24564 , H01J2237/304 , H01J2237/31703
摘要： This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.
摘要翻译： 本公开提供了用于离子注入机的法拉第杯的磁监测方法。 在本公开中，存在位于真空室内的真空室和法拉第杯。 法拉第杯配置成在离子束进入真空室的路径内移动。 位于真空室周围的磁性监测器被配置为将与法拉第杯相关的磁场与杂散磁场区分开。
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10.发明授权Method of implanting a workpiece to improve growth of a compound semiconductor 有权植入工件以改善化合物半导体生长的方法公开(公告)号：US08835287B2
公开(公告)日：2014-09-16
申请号：US13468744
申请日：2012-05-10
申请人： Ludovic Godet , Morgan D. Evans
发明人： Ludovic Godet , Morgan D. Evans
IPC分类号： H01L21/00 , H01L21/02 , H01L21/266 , H01L21/223 , H01L29/267 , H01L21/265
CPC分类号： H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/2236 , H01L21/265 , H01L21/26533 , H01L21/266 , H01L29/267
摘要： A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted such that the workpiece has a dose at a center different from a dose at a periphery. This workpiece also may be implanted one or more times to form a pattern of lines, which may be a grid, a series of circles, or other shapes. The distance between certain pairs of lines may be different across the workpiece.
摘要翻译： 植入工件以改善诸如GaN的化合物半导体的生长。 可以将该工件植入，使得工件具有不同于外围剂量的中心处的剂量。 该工件也可以被植入一次或多次以形成线的图案，其可以是网格，一系列圆或其它形状。 某些线对之间的距离在工件上可能是不同的。
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