METHOD OF PROVIDING A FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE THEREOF
    6.
    发明申请
    METHOD OF PROVIDING A FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE THEREOF 有权
    提供柔性半导体器件及其柔性半导体器件的方法

    公开(公告)号:US20170062380A1

    公开(公告)日:2017-03-02

    申请号:US15349511

    申请日:2016-11-11

    IPC分类号: H01L23/00

    摘要: Some embodiments include a method. The method can comprise: providing a carrier substrate; providing an adhesion modification layer over the carrier substrate; providing a device substrate; and coupling the device substrate and the carrier substrate together, the adhesion modification layer being located between the device substrate and the carrier substrate when the device substrate and the carrier substrate are coupled together. In these embodiments, the adhesion modification layer can be configured so that the device substrate couples indirectly with the carrier substrate by way of the adhesion modification layer with a first bonding force that is greater than a second bonding force by which the device substrate couples with the carrier substrate absent the adhesion modification layer. Other embodiments of related methods and devices are also disclosed.

    摘要翻译: 一些实施例包括一种方法。 该方法可以包括:提供载体衬底; 在所述载体基底上提供粘附修饰层; 提供器件衬底; 以及将所述器件衬底和所述载体衬底耦合在一起时,当所述器件衬底和所述载体衬底耦合在一起时,所述粘附修饰层位于所述器件衬底和所述载体衬底之间。 在这些实施例中,粘合改性层可以被配置成使得器件衬底通过粘合改性层间接地与载体衬底相互耦合,第一接合力大于第二结合力,器件衬底与 载体基材不存在粘附改性层。 还公开了相关方法和装置的其它实施例。

    Method for preventing electron emission from defects in a field emission device
    7.
    发明申请
    Method for preventing electron emission from defects in a field emission device 失效
    防止场发射装置中的电子发射缺陷的方法

    公开(公告)号:US20070123134A1

    公开(公告)日:2007-05-31

    申请号:US11292408

    申请日:2005-11-30

    IPC分类号: H01J9/24 H01J9/00

    摘要: A method is provided for preventing electron emission from a sidewall (34) of a gate electrode (20) and the edge (28) of the gate electrode stack of a field emission device (10), the gate electrode (20) having a surface (24) distally disposed from an anode (40) and a side (26) proximate to emission electrodes (38). The method comprises growing dielectric material (22) over the surface (24) and side (26) of the gate electrode (20), and performing an anisotropic etch (32) normal to the surface (24) to remove the dielectric material (22) from the surface (24) and leaving at least a portion of the dielectric material (22) on the side (26) of the gate electrode (20) and edge (28) of the gate electrode stack.

    摘要翻译: 提供了一种防止来自栅极电极(20)的侧壁(34)和场致发射器件(10)的栅电极堆叠的边缘(28)的电子发射的方法,栅电极(20)具有表面 (40)和靠近发射电极(38)的侧面(26)远离地设置的(24)。 该方法包括在栅电极(20)的表面(24)和侧面(26)上方生长电介质材料(22),并且执行垂直于表面(24)的各向异性蚀刻(32)以移除电介质材料 ),并且在栅电极(20)的侧面(26)和栅极电极叠层的边缘(28)上留下介电材料(22)的至少一部分。

    Edge emission field emission device
    8.
    发明授权
    Edge emission field emission device 失效
    边缘发射场发射装置

    公开(公告)号:US5804909A

    公开(公告)日:1998-09-08

    申请号:US832841

    申请日:1997-04-04

    IPC分类号: H01J3/02 H01J19/24

    摘要: An edge emission FED (100) includes a supporting substrate (110); a cathode (120) disposed on the supporting substrate (110); a ballast layer (130) disposed on the cathode (120); an emissive layer (140) disposed on the ballast layer (130) and defining an emissive edge (183); a field shaper layer (150) disposed on the emissive layer (140); a dielectric layer (160) disposed on the field shaper layer (150); a gate extraction electrode (170) disposed on the dielectric layer (160); an emission well (180) defined by the ballast layer (130), the emissive edge (183), the field shaper layer (150), the dielectric layer (160), and the gate extraction electrode (170); and an anode plate (188) opposing the gate extraction electrode (170).

    摘要翻译: 边缘发射FED(100)包括支撑衬底(110); 设置在所述支撑基板(110)上的阴极(120); 设置在阴极(120)上的镇流器层(130); 设置在所述镇流器层(130)上并限定发射边缘(183)的发射层(140); 设置在所述发射层(140)上的场整形器层(150); 设置在所述场整形器层(150)上的电介质层(160); 设置在介电层(160)上的栅极引出电极(170); 由镇流器层(130),发射边缘(183),场整形器层(150),电介质层(160)和栅极引出电极(170)限定的发射阱(180)。 以及与栅极引出电极(170)相对的阳极板(188)。

    METHOD OF PROVIDING A FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE THEREOF
    10.
    发明申请
    METHOD OF PROVIDING A FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE THEREOF 有权
    提供柔性半导体器件及其柔性半导体器件的方法

    公开(公告)号:US20160329268A1

    公开(公告)日:2016-11-10

    申请号:US15217405

    申请日:2016-07-22

    摘要: Some embodiments include a method. The method can include providing a carrier substrate, providing a release layer over the carrier substrate, and providing a device substrate over the carrier substrate and the release layer. Providing the device substrate can include bonding the device substrate to the carrier substrate, and bonding the device substrate to the release layer. Further, providing the release layer can include bonding the release layer to the carrier substrate. Meanwhile, the release layer can include polymethylmethacrylate, and the device substrate can be bonded to the carrier substrate with a first adhesion strength, the device substrate can be bonded to the release layer with a second adhesion strength less than the first adhesion strength, and the release layer can be bonded to the carrier substrate with a third adhesion strength greater than the second adhesion strength. Other embodiments of related methods and devices are also disclosed.

    摘要翻译: 一些实施例包括一种方法。 该方法可以包括提供载体衬底,在载体衬底上提供释放层,以及在载体衬底和释放层上提供器件衬底。 提供器件衬底可以包括将器件衬底接合到载体衬底,以及将器件衬底接合到释放层。 此外,提供释放层可以包括将释放层粘合到载体基底。 同时,脱模层可以包括聚甲基丙烯酸甲酯,并且装置基板可以以第一粘附强度结合到载体基板上,装置基板可以以小于第一粘合强度的第二粘合强度结合到剥离层,并且 剥离层可以以大于第二粘合强度的第三粘合强度结合到载体基材。 还公开了相关方法和装置的其它实施例。