公开(公告)号：US20100323107A1

公开(公告)日：2010-12-23

申请号：US12662878

申请日：2010-05-10

申请人： Yong-kyun Lee ,  Chang-jung Kim

发明人： Yong-kyun Lee ,  Chang-jung Kim

IPC分类号： B05D3/02 ,  B05D3/12

CPC分类号： C04B35/6264 ,  C04B35/491 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3249 ,  C04B2235/3296 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/787 ,  C23C18/1216 ,  C23C18/1275 ,  C23C18/1279 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/318

摘要： A method for preparing and forming a thick coating of lead-zirconate-titanate (PZT) on a substrate, includes preparing a first solution by dissolving a lead precursor in a mixed solvent of acid and diol and stirring the resultant, preparing a second solution by dissolving a zirconium precursor and a titanium precursor in a mixed solvent of acid and diol and stirring the same, mixing the first and second solutions to prepare a PZT stock solution, spin-coating the PZT solution on the substrate to form a coated assembly, and heat-treating the coated assembly.

摘要翻译： 一种在基材上制备和形成锆钛酸铅（PZT）的厚涂层的方法，包括通过将铅前体溶解在酸和二醇的混合溶剂中并搅拌，制备第一溶液，并通过 将锆前体和钛前体溶解在酸和二醇的混合溶剂中并搅拌，将第一和第二溶液混合以制备PZT储备溶液，将PZT溶液旋涂在基材上以形成涂布组件，以及 热处理涂层组件。

公开(公告)号：US07527752B2

公开(公告)日：2009-05-05

申请号：US11165352

申请日：2005-06-24

申请人： Seon Mi Yoon ,  Jae Young Choi ,  Yong Kyun Lee ,  Hyun Chul Lee

发明人： Seon Mi Yoon ,  Jae Young Choi ,  Yong Kyun Lee ,  Hyun Chul Lee

IPC分类号： B22F1/00 ,  B22F9/00 ,  B22F9/16

CPC分类号： H01G4/0085 ,  Y10T428/2982

摘要： A method for surface treatment of nickel nanoparticles using an organic solution, including dispersing nickel nanoparticles in a reductive organic solvent to obtain homogeneity; heating the dispersion of nickel nanoparticles; and separating the solution after treatment, washing and drying. Nickel nanoparticles treated by this method are preferably substantially free of impurities remaining on particle surfaces and thus have smooth surfaces and increased tap density, and the use thereof enables efficient production of a multi-layer ceramic capacitor.

摘要翻译： 一种使用有机溶液表面处理镍纳米颗粒的方法，包括将镍纳米颗粒分散在还原有机溶剂中以获得均匀性; 加热镍纳米颗粒的分散体; 并在处理，洗涤和干燥后分离溶液。 通过该方法处理的镍纳米颗粒优选基本上不含残留在颗粒表面上的杂质，因此具有光滑的表面和增加的振实密度，并且其使用能够有效地生产多层陶瓷电容器。

公开(公告)号：US07520915B2

公开(公告)日：2009-04-21

申请号：US11133171

申请日：2005-05-20

申请人： Seon-mi Yoon ,  Jae-young Choi ,  Yong-kyun Lee ,  Yulia Potapova

发明人： Seon-mi Yoon ,  Jae-young Choi ,  Yong-kyun Lee ,  Yulia Potapova

IPC分类号： B22F1/00 ,  B22F9/00 ,  C21B15/04 ,  C22B5/20 ,  C22C1/04

CPC分类号： C22B23/00 ,  B22F9/24 ,  B22F2998/00 ,  C22B23/0453 ,  Y10S977/777 ,  B22F1/0018

摘要： There is provided a method of preparing nano scale nickel powders by wet reducing process. An embodiment of the method of preparing nickel powders comprises preparing the first solution formed by mixing water and a base, preparing the second solution formed by mixing a polyol and a nickel compound, preparing a mixture by mixing the first solution and the second solution, heating the mixture, and separating the nickel powders generated during heating.

摘要翻译： 提供了一种通过湿法还原法制备纳米级镍粉的方法。 制备镍粉的方法的一个实施例包括制备通过混合水和碱形成的第一溶液，制备通过混合多元醇和镍化合物形成的第二溶液，通过混合第一溶液和第二溶液制备混合物，加热 混合物，并分离加热过程中产生的镍粉。

公开(公告)号：US20070181227A1

公开(公告)日：2007-08-09

申请号：US11710406

申请日：2007-02-26

申请人： Soon-ho Kim ,  Jae-young Choi ,  Tae-wan Kim ,  Eun-bum Cho ,  Yong-kyun Lee

发明人： Soon-ho Kim ,  Jae-young Choi ,  Tae-wan Kim ,  Eun-bum Cho ,  Yong-kyun Lee

IPC分类号： C22C19/03

CPC分类号： B22F1/0003 ,  B22F1/0085 ,  B22F2998/10 ,  B22F1/0022

摘要： Provided are non-magnetic nickel powders and a method for preparing the same. The nickel powders are non-magnetic and have a HCP crystal structure. An exemplary method includes (a) dispersing nickel powders with a FCC crystal structure in an organic solvent to prepare a starting material dispersion, and (b) heating the starting material dispersion to transform the nickel powders with the FCC crystal structure to the nickel powders with the HCP crystal structure. The nickel powders do not exhibit magnetic agglomeration or aggregation phenomenon. Therefore, exemplary pastes for inner electrode formation in various electronic devices, which contain the nickel powders of the present disclosure, can be provided in a relatively uniform, well-dispersed state because of the reduced aggregation and agglomeration of the nickel powder. Also, inner electrodes made of the nickel powders can have a low impedance value even at high frequency band.

摘要翻译： 提供非磁性镍粉末及其制备方法。 镍粉是非磁性的，具有HCP晶体结构。 一种示例性方法包括（a）将FCC晶体结构的镍粉分散在有机溶剂中以制备原料分散体，和（b）加热原料分散体以将具有FCC晶体结构的镍粉转化为镍粉， HCP晶体结构。 镍粉末不会发生磁性聚集或聚集现象。 因此，由于镍粉的聚集和聚集减少，所以可以以相对均匀的，良好分散的状态提供包含本公开的镍粉末的各种电子器件中的内部电极形成的示例性糊料。 此外，即使在高频带，由镍粉制成的内电极也可以具有低阻抗值。

公开(公告)号：US07238388B2

公开(公告)日：2007-07-03

申请号：US10704745

申请日：2003-11-12

申请人： Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

发明人： Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

IPC分类号： B05D3/02

CPC分类号： C04B35/6264 ,  C01G23/002 ,  C01G25/006 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2006/40 ,  C04B35/491 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/44 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/483 ,  H01L21/31691

摘要： A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

摘要翻译： 用于形成铁电薄膜的组合物包括：PZT溶胶 - 凝胶溶液，其包含铅前体的全部或部分水解产物及其全部或部分水解缩聚产物中的至少一种; 锆前体的全部或部分水解产物，其全部或部分水解和缩聚产物，以及具有至少一个羟基离子和至少一种不可水解配体的锆络合物; 以及钛前体，其全部或部分水解缩聚产物和具有至少一个羟基离子和至少一个不可水解配体的钛络合物的全部或部分水解产物; 和包含硅前体的全部或部分水解产物及其全部或部分水解和缩聚产物中的至少一种的Bi 2 SiO 5溶胶 - 凝胶溶液， 和通过回流作为铋前体的三苯基铋获得的结果。

公开(公告)号：US06593149B2

公开(公告)日：2003-07-15

申请号：US10029030

申请日：2001-12-28

申请人： Yong-kyun Lee ,  June-key Lee

发明人： Yong-kyun Lee ,  June-key Lee

IPC分类号： H01L2100

CPC分类号： H01L21/02205 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1254 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691

摘要： A method for manufacturing a ferroelectric thin film using a sol-gel process comprising the steps of dissolving a Pb precursor using a solvent to prepare a Pb solution and stabilizing a Zr precursor and a Ti precursor to prepare a Zr solution and a Ti solution, respectively, mixing the Zr solution and Ti solution, stirring the Ti—Zr mixed solution with the Pb solution and hydrolyzing to prepare a ferroelectric solution, and forming a ferroelectric thin film on a substrate using the ferroelectric solution.

公开(公告)号：US20160181182A1

公开(公告)日：2016-06-23

申请号：US15006935

申请日：2016-01-26

申请人： Joseph Smith ,  Emmett Howard ,  Jennifer Blain Christen ,  Yong-Kyun Lee

发明人： Joseph Smith ,  Emmett Howard ,  Jennifer Blain Christen ,  Yong-Kyun Lee

IPC分类号： H01L23/498 ,  H01L27/15 ,  H01L27/146 ,  H01L21/768 ,  H01L29/786

CPC分类号： H01L23/4985 ,  A61B2562/02 ,  A61B2562/164 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/768 ,  H01L23/15 ,  H01L23/3192 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/153 ,  H01L27/156 ,  H01L27/3293 ,  H01L29/786 ,  H01L29/78603 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2924/0002 ,  H01L2924/00

摘要： Some embodiments include a method of providing an electronic device. The method can comprise: providing a first device substrate; providing one or more first active sections over a second side of the first device substrate at a first device portion of the first device substrate; and after providing the first active section(s) over the second side of the first device substrate at the first device portion, folding a first perimeter portion of the first device substrate toward the first device portion at a first side of the first device substrate so that a first edge portion remains to at least partially frame the first device portion. The first edge portion can comprise a first edge portion width dimension smaller than a first smallest cross dimension of one or more pixel(s) of one or more semiconductor device(s) of the first active section(s). Other embodiments of related methods and devices are also disclosed.

摘要翻译： 一些实施例包括提供电子设备的方法。 该方法可以包括：提供第一器件衬底; 在所述第一器件衬底的第一器件部分处在所述第一器件衬底的第二侧上提供一个或多个第一有源部分; 并且在第一器件部分上在第一器件衬底的第二侧上设置第一有源部分之后，在第一器件衬底的第一侧将第一器件衬底的第一周边部分朝向第一器件部分折叠，从而 第一边缘部分保持以至少部分地框架第一装置部分。 第一边缘部分可以包括小于第一有效部分的一个或多个半导体器件的一个或多个像素的第一最小交叉尺寸的第一边缘部分宽度尺寸。 还公开了相关方法和装置的其它实施例。

公开(公告)号：US20090122464A1

公开(公告)日：2009-05-14

申请号：US12314953

申请日：2008-12-19

申请人： Seon Mi Yoon ,  Jae Young Choi ,  Yong Kyun Lee ,  Hyun Chul Lee

发明人： Seon Mi Yoon ,  Jae Young Choi ,  Yong Kyun Lee ,  Hyun Chul Lee

IPC分类号： H01G4/12 ,  B32B5/16 ,  H01B1/02 ,  H01B1/22

CPC分类号： H01G4/0085 ,  Y10T428/2982

摘要： A method for surface treatment of nickel nanoparticles using an organic solution, including dispersing nickel nanoparticles in a reductive organic solvent to obtain homogeneity; heating the dispersion of nickel nanoparticles; and separating the solution after treatment, washing and drying. Nickel nanoparticles treated by this method are preferably substantially free of impurities remaining on particle surfaces and thus have smooth surfaces and increased tap density, and the use thereof enables efficient production of a multi-layer ceramic capacitor.

摘要翻译： 一种使用有机溶液表面处理镍纳米颗粒的方法，包括将镍纳米颗粒分散在还原有机溶剂中以获得均匀性; 加热镍纳米颗粒的分散体; 并在处理，洗涤和干燥后分离溶液。 通过该方法处理的镍纳米颗粒优选基本上不含残留在颗粒表面上的杂质，因此具有光滑的表面和增加的振实密度，并且其使用能够有效地生产多层陶瓷电容器。

公开(公告)号：US07374994B2

公开(公告)日：2008-05-20

申请号：US11136456

申请日：2005-05-25

申请人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

发明人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC分类号： H01L21/8242

CPC分类号： H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

摘要翻译： 具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。 铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。 铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。 可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

公开(公告)号：US20050272200A1

公开(公告)日：2005-12-08

申请号：US11136456

申请日：2005-05-25

申请人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

发明人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC分类号： C01B33/00 ,  C01G29/00 ,  C04B35/475 ,  C23C14/06 ,  C23C16/42 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51 ,  H01L21/473

CPC分类号： H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.