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公开(公告)号：US07364349B2
公开(公告)日：2008-04-29
申请号：US11439303
申请日：2006-05-22
IPC分类号： B01F15/04
CPC分类号： H01L21/67253 , G05D11/133
摘要： A dilution stage is adapted to supply a dilute chemistry to a semiconductor device processing apparatus. The dilution stage includes a first vessel adapted to store the chemistry after dilution and a second vessel adapted to store the chemistry prior to dilution. The dilution stage may also include a control mechanism which is adapted to selectively control flowing of the chemistry and a dilutant to the first vessel. The control mechanism may be operative to fill the second vessel with the chemistry, and to flow the dilutant to the first vessel via the second vessel.
摘要翻译： 稀释阶段适于向半导体器件处理设备提供稀释化学物质。 稀释阶段包括适于在稀释后储存化学物质的第一容器和适于在稀释之前储存化学物质的第二容器。 稀释阶段还可以包括适于选择性地控制化学物质和稀释剂流向第一容器的控制机构。 控制机构可操作以用化学物质填充第二容器，并且通过第二容器将稀释剂流经第一容器。
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公开(公告)号：US20060211344A1
公开(公告)日：2006-09-21
申请号：US11439303
申请日：2006-05-22
IPC分类号： B24B1/00
CPC分类号： H01L21/67253 , G05D11/133
摘要： A dilution stage is adapted to supply a dilute chemistry to a semiconductor device processing apparatus. The dilution stage includes a first vessel adapted to store the chemistry after dilution and a second vessel adapted to store the chemistry prior to dilution. The dilution stage may also include a control mechanism which is adapted to selectively control flowing of the chemistry and a dilutant to the first vessel. The control mechanism may be operative to fill the second vessel with the chemistry, and to flow the dilutant to the first vessel via the second vessel.
摘要翻译： 稀释阶段适于向半导体器件处理设备提供稀释化学物质。 稀释阶段包括适于在稀释后储存化学物质的第一容器和适于在稀释之前储存化学物质的第二容器。 稀释阶段还可以包括适于选择性地控制化学物质和稀释剂流向第一容器的控制机构。 控制机构可操作以用化学物质填充第二容器，并且通过第二容器将稀释剂流经第一容器。
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公开(公告)号：US07063455B2
公开(公告)日：2006-06-20
申请号：US10338249
申请日：2003-01-06
IPC分类号： B01F15/04
CPC分类号： H01L21/67253 , G05D11/133
摘要： A dilution stage is adapted to supply a dilute chemistry to a semiconductor device processing apparatus. The dilution stage includes a first vessel adapted to store the chemistry after dilution and a second vessel adapted to store the chemistry prior to dilution. The dilution stage may also include a control mechanism which is adapted to selectively control flowing of the chemistry and a dilutant to the first vessel. The control mechanism may be operative to fill the second vessel with the chemistry, and to flow the dilutant to the first vessel via the second vessel.
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4.发明授权Single wafer apparatus for drying semiconductor substrates using an inert gas air-knife 有权使用惰性气体气刀干燥半导体衬底的单晶片装置公开(公告)号：US08322045B2
公开(公告)日：2012-12-04
申请号：US12249956
申请日：2008-10-12
IPC分类号： F26B21/06
CPC分类号： H01L21/67034
摘要： In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. Numerous other aspects are provided.
摘要翻译： 一方面，提供了一种基板处理装置。 该装置包括用于通过移动衬底通过流体在衬底的表面上形成弯液面的机构; 定位成施加气刀以缩短形成在基板表面上的弯液面的气刀装置; 以及干燥蒸汽喷嘴，定位成将干燥蒸汽引导到由气刀缩短的弯液面。 提供了许多其他方面。
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5.发明申请SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE 有权使用惰性气体空气干燥半导体基板的单波长方法和装置公开(公告)号：US20090044839A1
公开(公告)日：2009-02-19
申请号：US12249956
申请日：2008-10-12
IPC分类号： B08B13/00
CPC分类号： H01L21/67034
摘要： In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. Numerous other aspects are provided.
摘要翻译： 一方面，提供了一种基板处理装置。 该装置包括用于通过移动衬底通过流体在衬底的表面上形成弯液面的机构; 定位成施加气刀以缩短形成在基板表面上的弯液面的气刀装置; 以及干燥蒸汽喷嘴，定位成将干燥蒸汽引导到由气刀缩短的弯液面。 提供了许多其他方面。
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6.发明申请SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE 审中-公开使用惰性气体空气干燥半导体基板的单波长方法和装置公开(公告)号：US20090032068A1
公开(公告)日：2009-02-05
申请号：US12249961
申请日：2008-10-12
CPC分类号： H01L21/67034
摘要： In one aspect, a method is provided. The method comprises forming a meniscus at an interface between a substrate and a fluid surface by moving the substrate through the fluid; shortening the meniscus by applying an air knife to the meniscus at the interface between the substrate and the fluid surface; and Marangoni drying the substrate by applying a drying vapor to the shortened meniscus. Numerous other aspects are provided.
摘要翻译： 一方面，提供了一种方法。 该方法包括通过移动衬底通过流体在衬底和流体表面之间的界面处形成弯液面; 通过在基板和流体表面之间的界面处向弯液面施加气刀来缩短弯月面; 并且Marangoni通过对缩短的弯液面施加干燥蒸气来干燥基底。 提供了许多其他方面。
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7.发明申请SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE 审中-公开使用惰性气体空气干燥半导体基板的单波长方法和装置公开(公告)号：US20090078292A1
公开(公告)日：2009-03-26
申请号：US12249960
申请日：2008-10-12
IPC分类号： B08B13/00
CPC分类号： H01L21/67034
摘要： In one aspect, an apparatus is provided. The apparatus comprises a chamber; a plurality of rollers adapted to support a wafer in a vertical orientation within a chamber; a pair of brushes adapted to scrub a first and a second side of the wafer respectively; a first spray bar adapted to spray a liquid on the wafer to form a meniscus on the wafer as the wafer is lifted out of the chamber; and a second spray bar adapted to direct a vapor to the meniscus, the vapor being adapted to lower a surface tension of the liquid at the meniscus to perform Marangoni drying of the wafer as the wafer is lifted out of the chamber. Numerous other aspects are provided.
摘要翻译： 一方面，提供了一种装置。 该装置包括一个室; 适于在腔室内以垂直取向支撑晶片的多个辊; 一对刷子，分别用于擦拭所述晶片的第一和第二侧; 第一喷杆，当晶片被提升出室时，适于在晶片上喷射液体以在晶片上形成弯月面; 以及适于将蒸汽引导到弯液面的第二喷杆，所述蒸汽适于降低所述弯液面处的液体的表面张力，以在所述晶片被提升到所述腔室之后执行所述晶片的马兰戈尼干燥。 提供了许多其他方面。
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公开(公告)号：US20090266707A1
公开(公告)日：2009-10-29
申请号：US11890551
申请日：2007-08-06
IPC分类号： C25B9/00
CPC分类号： C25F3/30 , H01L21/32115 , H01L21/32125
摘要： Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.
摘要翻译： 通过在衬底的第一部分处执行金属的阳极溶解并且用抛光垫同时机械抛光衬底的第二部分来进行衬底辅助电抛光。 阳极溶解包括在阳极底物和阴极电解抛光头之间形成电解抛光液体的薄液体层。 基板和电源之间的电触点的位置允许基板的外围边缘区域被该机械抛光。 优选地，使用各向同性材料去除技术进一步平坦化基底。 一种设备包括电抛光头，该电抛光头可移动到接近基底的第一部分的位置以形成薄间隙;以及抛光垫，其利用最小的压力机械地抛光所述基底的第二部分。
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公开(公告)号：US20060255016A1
公开(公告)日：2006-11-16
申请号：US11489874
申请日：2006-07-19
申请人： Julia Svirchevski , Saket Chadda , Ismail Emesh , Thomas Laursen , Bentley Palmer , Sanjay Basak , Krishna Murella
发明人： Julia Svirchevski , Saket Chadda , Ismail Emesh , Thomas Laursen , Bentley Palmer , Sanjay Basak , Krishna Murella
IPC分类号： C03C15/00 , H01L21/461
CPC分类号： B24B27/0023 , B24B37/042 , B24B37/345 , H01L21/3212
摘要： A method for polishing a metal layer on a workpiece is provided wherein relative motion is produced between the metal layer and a polishing surface and wherein the metal layer has a polish resistant film thereon. The metal layer is first pre-treated to substantially remove the polish resistant film. Next, the metal layer is polished at low pressure between the metal layer and the polishing surface in the presence of a polishing solution. The pretreating may be accomplished by, for example, sputtering, polishing the polish-resistant film in the presence of abrasive polishing solution, polishing the polish-resistant film at higher pressures between the film and the polishing surface, maintaining the temperature of the pretreating step to be substantially between 10 degrees Centigrade and 30 degrees Centigrade, and chemically removing the film.
摘要翻译： 提供了一种在工件上抛光金属层的方法，其中在金属层和抛光表面之间产生相对运动，并且其中金属层在其上具有防抛光膜。 首先对金属层进行预处理以基本上除去耐抛光膜。 接着，在抛光液的存在下，金属层在金属层与研磨面之间以低压被抛光。 预处理可以通过例如溅射来实现，在研磨抛光溶液的存在下抛光耐抛光膜，在膜和抛光表面之间以更高的压力抛光耐抛光膜，保持预处理步骤的温度 基本上在10摄氏度和30摄氏度之间，并化学去除膜。
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公开(公告)号：US07686935B2
公开(公告)日：2010-03-30
申请号：US11213190
申请日：2005-08-26
IPC分类号： B23H5/06
CPC分类号： C25F3/30 , H01L21/32115 , H01L21/32125 , H01L21/6715
摘要： Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.
摘要翻译： 通过在衬底的第一部分处执行金属的阳极溶解并且用抛光垫同时机械抛光衬底的第二部分来进行衬底辅助电抛光。 阳极溶解包括在阳极底物和阴极电解抛光头之间形成电解抛光液体的薄液体层。 基板和电源之间的电触点的位置允许基板的外围边缘区域被该机械抛光。 优选地，使用各向同性材料去除技术进一步平坦化基底。 一种设备包括电抛光头，该电抛光头可移动到接近基底的第一部分的位置以形成薄间隙;以及抛光垫，其利用最小的压力机械地抛光所述基底的第二部分。
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