-
公开(公告)号：US20100080977A1
公开(公告)日：2010-04-01
申请号：US12630204
申请日：2009-12-03
申请人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
发明人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
IPC分类号： B32B3/00
CPC分类号： H01L29/78603 , B32B3/085 , B32B3/20 , B32B3/266 , B32B5/16 , B32B5/18 , B32B15/00 , B32B15/08 , B32B15/16 , B32B27/06 , B32B27/08 , B32B27/14 , B32B2250/40 , B32B2255/10 , B32B2255/205 , B32B2264/102 , B32B2307/306 , B32B2307/704 , B32B2457/20 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L51/0096 , H01L51/529 , Y10T428/249953 , Y10T428/249969 , Y10T428/24997 , Y10T428/249971 , Y10T428/249974 , Y10T428/249975 , Y10T428/249987 , Y10T428/24999 , Y10T428/31678
摘要： The prevent invention discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is easy to carry out.
摘要翻译： 本发明公开了一种耐热层的结构及其形成方法。 形成在塑料基板上的热电阻结构包括形成在所述塑料基板上的多孔层，所述多孔层包括多个中空结构的氧化物和形成在所述多孔层上的缓冲层，其中所述多孔层可以保护所述塑料 基板由制造过程中产生的热量造成的损坏。 利用上述结构和方法，在不改变任何参数的情况下，在低温多硅（即LTPS）的技术中，在塑料基板上制造薄膜晶体管并形成电子器件容易进行。
-
公开(公告)号：US08029890B2
公开(公告)日：2011-10-04
申请号：US12630204
申请日：2009-12-03
申请人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
发明人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
IPC分类号： B32B3/26
CPC分类号： H01L29/78603 , B32B3/085 , B32B3/20 , B32B3/266 , B32B5/16 , B32B5/18 , B32B15/00 , B32B15/08 , B32B15/16 , B32B27/06 , B32B27/08 , B32B27/14 , B32B2250/40 , B32B2255/10 , B32B2255/205 , B32B2264/102 , B32B2307/306 , B32B2307/704 , B32B2457/20 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L51/0096 , H01L51/529 , Y10T428/249953 , Y10T428/249969 , Y10T428/24997 , Y10T428/249971 , Y10T428/249974 , Y10T428/249975 , Y10T428/249987 , Y10T428/24999 , Y10T428/31678
摘要： The prevent invention discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is easy to carry out.
摘要翻译： 本发明公开了一种耐热层的结构及其形成方法。 形成在塑料基板上的热电阻结构包括形成在所述塑料基板上的多孔层，所述多孔层包括多个中空结构的氧化物和形成在所述多孔层上的缓冲层，其中所述多孔层可以保护所述塑料 基板由制造过程中产生的热量造成的损坏。 利用上述结构和方法，在不改变任何参数的情况下，在低温多硅（即LTPS）的技术中，在塑料基板上制造薄膜晶体管并形成电子器件容易进行。
-
公开(公告)号：US20060093807A1
公开(公告)日：2006-05-04
申请号：US11023569
申请日：2004-12-29
申请人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
发明人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
CPC分类号： H01L29/78603 , B32B3/085 , B32B3/20 , B32B3/266 , B32B5/16 , B32B5/18 , B32B15/00 , B32B15/08 , B32B15/16 , B32B27/06 , B32B27/08 , B32B27/14 , B32B2250/40 , B32B2255/10 , B32B2255/205 , B32B2264/102 , B32B2307/306 , B32B2307/704 , B32B2457/20 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L51/0096 , H01L51/529 , Y10T428/249953 , Y10T428/249969 , Y10T428/24997 , Y10T428/249971 , Y10T428/249974 , Y10T428/249975 , Y10T428/249987 , Y10T428/24999 , Y10T428/31678
摘要： The prevent invention discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is easy to carry out.
摘要翻译： 本发明公开了一种耐热层的结构及其形成方法。 形成在塑料基板上的热电阻结构包括形成在所述塑料基板上的多孔层，所述多孔层包括多个中空结构的氧化物和形成在所述多孔层上的缓冲层，其中所述多孔层可以保护所述塑料 基板由制造过程中产生的热量造成的损坏。 利用上述结构和方法，在不改变任何参数的情况下，在低温多硅（即LTPS）的技术中，在塑料基板上制造薄膜晶体管并形成电子器件容易进行。
-
公开(公告)号：US20110297550A1
公开(公告)日：2011-12-08
申请号：US13213892
申请日：2011-08-19
申请人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
发明人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
IPC分类号： C25D5/56
CPC分类号： H01L29/78603 , B32B3/085 , B32B3/20 , B32B3/266 , B32B5/16 , B32B5/18 , B32B15/00 , B32B15/08 , B32B15/16 , B32B27/06 , B32B27/08 , B32B27/14 , B32B2250/40 , B32B2255/10 , B32B2255/205 , B32B2264/102 , B32B2307/306 , B32B2307/704 , B32B2457/20 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L51/0096 , H01L51/529 , Y10T428/249953 , Y10T428/249969 , Y10T428/24997 , Y10T428/249971 , Y10T428/249974 , Y10T428/249975 , Y10T428/249987 , Y10T428/24999 , Y10T428/31678
摘要： The prevent disclosure discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is possible.
摘要翻译： 防止公开内容公开了耐热层的结构及其形成方法。 形成在塑料基板上的热电阻结构包括形成在所述塑料基板上的多孔层，所述多孔层包括多个中空结构的氧化物和形成在所述多孔层上的缓冲层，其中所述多孔层可以保护所述塑料 基板由制造过程中产生的热量造成的损坏。 利用上述结构和方法，在不改变任何参数的情况下，在低温多硅（即LTPS）的技术中制造薄膜晶体管并在塑料基板上形成电子器件是可能的。
-
5.发明申请公开(公告)号：US20070077735A1
公开(公告)日：2007-04-05
申请号：US11395215
申请日：2006-04-03
申请人： I-Hsuan Peng , Chin-Jen Huang , Liang-Tang Wang , Jung-Fang Chang , Te-Chi Wong
发明人： I-Hsuan Peng , Chin-Jen Huang , Liang-Tang Wang , Jung-Fang Chang , Te-Chi Wong
IPC分类号： H01L21/20
CPC分类号： C30B25/105 , C23C16/24 , C23C16/507 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02667 , H01L27/1281 , H01L27/1285
摘要： A low temperature poly-silicon thin film element, method of making poly-silicon thin film by direct deposition at low temperature, and the inductively-coupled plasma chemical vapor deposition equipment utilized, wherein the poly-silicon material is induced to crystallize into a poly-silicon thin film at low temperature by means of high density plasma and substrate bias voltage. Furthermore, the atom structure of the poly-silicon thin film is aligned in regular arrangement by making use of the induction layer having optimal orientation and lattice constant close to that of the silicon, thus raising the crystallization quality of the poly-silicon thin film and reducing the thickness of the incubation layer.
摘要翻译： 低温多晶硅薄膜元件，通过在低温下直接沉积制造多晶硅薄膜的方法，以及所用的电感耦合等离子体化学气相沉积设备，其中所述多晶硅材料被诱导结晶成聚 硅薄膜在低温下通过高密度等离子体和衬底偏置电压。 此外，通过利用具有接近于硅的最佳取向和晶格常数的感应层，多数硅薄膜的原子结构以规则的排列排列，从而提高多晶硅薄膜的结晶质量， 减少孵育层的厚度。
-
公开(公告)号：US20090269874A1
公开(公告)日：2009-10-29
申请号：US12487657
申请日：2009-06-19
申请人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
发明人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
IPC分类号： H01L33/00
CPC分类号： H01L51/56 , G02F1/133305 , H01L27/3244 , H01L51/003 , H01L51/0097 , H01L51/5253 , H01L2227/326 , Y02E10/549
摘要： In a method for fabricating a flexible pixel array substrate, first, a release layer is formed on a rigid substrate. Next, on the release layer, a polymer film is formed, the adhesive strength between the rigid substrate and the release layer being higher than that between the release layer and the polymer film. The polymer film is formed by spin coating a polymer monomer and performing a curing process to form a polymer layer. Afterwards, a pixel array is formed on the polymer film. The polymer film with the pixel array formed thereon is separated from the rigid substrate.
摘要翻译： 在柔性像素阵列基板的制造方法中，首先，在刚性基板上形成剥离层。 接着，在剥离层上形成聚合物膜，刚性基材和剥离层之间的粘合强度高于剥离层与聚合物膜之间的粘合强度。 聚合物膜通过旋涂聚合物单体并进行固化过程以形成聚合物层而形成。 之后，在聚合物膜上形成像素阵列。 其上形成有像素阵列的聚合物膜与刚性基板分离。
-
公开(公告)号：US07807551B2
公开(公告)日：2010-10-05
申请号：US12487657
申请日：2009-06-19
申请人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
发明人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
IPC分类号： H01L21/46
CPC分类号： H01L51/56 , G02F1/133305 , H01L27/3244 , H01L51/003 , H01L51/0097 , H01L51/5253 , H01L2227/326 , Y02E10/549
摘要： In a method for fabricating a flexible pixel array substrate, first, a release layer is formed on a rigid substrate. Next, on the release layer, a polymer film is formed, the adhesive strength between the rigid substrate and the release layer being higher than that between the release layer and the polymer film. The polymer film is formed by spin coating a polymer monomer and performing a curing process to form a polymer layer. Afterwards, a pixel array is formed on the polymer film. The polymer film with the pixel array formed thereon is separated from the rigid substrate.
摘要翻译： 在柔性像素阵列基板的制造方法中，首先，在刚性基板上形成剥离层。 接着，在剥离层上形成聚合物膜，刚性基材和剥离层之间的粘合强度高于剥离层与聚合物膜之间的粘合强度。 聚合物膜通过旋涂聚合物单体并进行固化过程以形成聚合物层而形成。 之后，在聚合物膜上形成像素阵列。 其上形成有像素阵列的聚合物膜与刚性基板分离。
-
公开(公告)号：US07566950B2
公开(公告)日：2009-07-28
申请号：US11164408
申请日：2005-11-22
申请人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
发明人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
IPC分类号： H01L23/14
CPC分类号： H01L51/56 , G02F1/133305 , H01L27/3244 , H01L51/003 , H01L51/0097 , H01L51/5253 , H01L2227/326 , Y02E10/549
摘要： The present invention provides a method for fabricating a flexible pixel array substrate as follows. First, a release layer is formed on a rigid substrate. Next, on the release layer, a polymer film is formed, the adhesive strength between the rigid substrate and the release layer being higher than that between the release layer and the polymer film. The polymer film is formed by spin coating a polymer monomer and performing a curing process to form a polymer layer. Afterwards, a pixel array is formed on the polymer film. The polymer film with the pixel array formed thereon is separated from the rigid substrate.
摘要翻译： 本发明提供如下制造柔性像素阵列基板的方法。 首先，在刚性基板上形成剥离层。 接着，在剥离层上形成聚合物膜，刚性基材和剥离层之间的粘合强度高于剥离层与聚合物膜之间的粘合强度。 聚合物膜通过旋涂聚合物单体并进行固化过程以形成聚合物层而形成。 之后，在聚合物膜上形成像素阵列。 其上形成有像素阵列的聚合物膜与刚性基板分离。
-
公开(公告)号：US20070059854A1
公开(公告)日：2007-03-15
申请号：US11164408
申请日：2005-11-22
申请人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
发明人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
IPC分类号： H01L21/00
CPC分类号： H01L51/56 , G02F1/133305 , H01L27/3244 , H01L51/003 , H01L51/0097 , H01L51/5253 , H01L2227/326 , Y02E10/549
摘要： The present invention provides a method for fabricating a flexible pixel array substrate as follows. First, a release layer is formed on a rigid substrate. Next, on the release layer, a polymer film is formed, the adhesive strength between the rigid substrate and the release layer being higher than that between the release layer and the polymer film. The polymer film is formed by spin coating a polymer monomer and performing a curing process to form a polymer layer. Afterwards, a pixel array is formed on the polymer film. The polymer film with the pixel array formed thereon is separated from the rigid substrate.
摘要翻译： 本发明提供如下制造柔性像素阵列基板的方法。 首先，在刚性基板上形成剥离层。 接着，在剥离层上形成聚合物膜，刚性基材和剥离层之间的粘合强度高于剥离层与聚合物膜之间的粘合强度。 聚合物膜通过旋涂聚合物单体并进行固化过程以形成聚合物层而形成。 之后，在聚合物膜上形成像素阵列。 其上形成有像素阵列的聚合物膜与刚性基板分离。
-
公开(公告)号：US20070026647A1
公开(公告)日：2007-02-01
申请号：US11245208
申请日：2005-10-07
申请人： Chi-Ming Chang , Jung-Fang Chang , Hung-Tse Chen , Te-Chi Wong
发明人： Chi-Ming Chang , Jung-Fang Chang , Hung-Tse Chen , Te-Chi Wong
CPC分类号： H01L21/02667 , C23C14/16 , C23C14/5806 , H01L21/02425 , H01L21/02532 , H01L21/2022
摘要： A method for forming a polycrystalline silicon thin film, comprising steps of: providing a substrate; forming an amorphous silicon thin film on the substrate; and inducing a plurality of eddy currents to heat up the substrate such that the amorphous silicon thin-film is annealed to form the polycrystalline silicon thin film.
摘要翻译： 一种形成多晶硅薄膜的方法，包括以下步骤：提供基板; 在所述基板上形成非晶硅薄膜; 并且引起多个涡流以加热衬底，使得非晶硅薄膜退火以形成多晶硅薄膜。
-
-
-
-
-
-
-
-
-
搜索结果
21 条记录 (耗时 0.025 秒)
