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1.发明申请公开(公告)号：US20070071893A1
公开(公告)日：2007-03-29
申请号：US11524295
申请日：2006-09-21
申请人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
发明人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
摘要： In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae: wherein R1, R2, R3, R4 and R5 are independently H or a C1-C5 alkyl functional group, n is an integer of 1 to 5, x is 1 or 2, and y is 0 or 1, or wherein R1, R2, R3, R4 R5, R6, R7 and R8 are independently H or a C1-C5 alkyl functional group, and Y is boron.
摘要翻译： 在制造金属布线的方法中，将包含铝作为中心金属的有机铝前体施加到基板上。 施加到基材上的有机铝前体热分解形成铝。 铝沉积在基板上以形成具有低电阻的铝布线。 有机铝前体包括根据以下化学式之一的化学结构：其中R 1，R 2，R 3，R 3， R 4和R 5独立地是H或C 1 -C 5烷基官能团，n是整数 1至5，x为1或2，y为0或1，或其中R 1，R 2，R 3，R R 5，R 6，R 7和R 8独立地是H 或C 1 -C 5烷基官能团，Y是硼。
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2.发明授权公开(公告)号：US07452569B2
公开(公告)日：2008-11-18
申请号：US11524295
申请日：2006-09-21
申请人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
发明人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
摘要： In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae: wherein R1, R2, R3, R4 and R5 are independently H or a C1-C5 alkyl functional group, n is an integer of 1 to 5, x is 1 or 2, and y is 0 or 1, or wherein R1, R2, R3, R4 R5, R6, R7 and R8 are independently H or a C1-C5 alkyl functional group, and Y is boron.
摘要翻译： 在制造金属布线的方法中，将包含铝作为中心金属的有机铝前体施加到基板上。 施加到基材上的有机铝前体热分解形成铝。 铝沉积在基板上以形成具有低电阻的铝布线。 有机铝前体包括根据以下化学式之一的化学结构：其中R 1，R 2，R 3，R 3， R 4和R 5独立地是H或C 1 -C 5烷基官能团，n是整数 1至5，x为1或2，y为0或1，或其中R 1，R 2，R 3，R R 5，R 6，R 7和R 8独立地是H 或C 1 -C 5烷基官能团，Y是硼。
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3.发明授权公开(公告)号：US07488684B2
公开(公告)日：2009-02-10
申请号：US11523604
申请日：2006-09-20
申请人： Jung-Sik Choi , Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho , Dong-Jun Lee
发明人： Jung-Sik Choi , Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho , Dong-Jun Lee
IPC分类号： H01L21/285
CPC分类号： H01L21/28556 , C07F5/069 , C23C16/18 , H01L21/32051 , H01L21/76876 , H01L21/76877
摘要： An organic aluminum precursor includes aluminum as a central metal, and borohydride and trimethylamine as ligands. In a method of forming an aluminum layer or wire, the organic aluminum presursor is introduced onto a substrate, and then thermally decomposed. The aluminum decomposed from the organic aluminum precursor is deposited on the substrate.
摘要翻译： 有机铝前体包括铝作为中心金属，硼氢化物和三甲胺作为配体。 在形成铝层或线材的方法中，将有机铝前驱体引入到基板上，然后热分解。 从有机铝前体分解的铝沉积在基材上。
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4.发明申请公开(公告)号：US20070066061A1
公开(公告)日：2007-03-22
申请号：US11523604
申请日：2006-09-20
申请人： Jung-Sik Choi , Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho , Dong-Jun Lee
发明人： Jung-Sik Choi , Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho , Dong-Jun Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C07F5/069 , C23C16/18 , H01L21/32051 , H01L21/76876 , H01L21/76877
摘要： An organic aluminum precursor includes aluminum as a central metal, and borohydride and trimethylamine as ligands. In a method of forming an aluminum layer or wire, the organic aluminum presursor is introduced onto a substrate, and then thermally decomposed. The aluminum decomposed from the organic aluminum precursor is deposited on the substrate.
摘要翻译： 有机铝前体包括铝作为中心金属，硼氢化物和三甲胺作为配体。 在形成铝层或线材的方法中，将有机铝前驱体引入到基板上，然后热分解。 从有机铝前体分解的铝沉积在基材上。
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5.发明申请Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same 有权有机金属前体，具有该薄膜的薄膜，包含该薄膜的金属布线，形成薄膜的方法及使用其制造金属布线的方法公开(公告)号：US20090035516A1
公开(公告)日：2009-02-05
申请号：US12219983
申请日：2008-07-31
申请人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
CPC分类号： C23C16/18 , C07F5/00 , C07F5/069 , C23C16/20 , Y10T428/24331
摘要： Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.
摘要翻译： 公开了可用于制造半导体器件的有机金属前体，具有该有机金属前体的薄膜，包括该薄膜的金属布线，薄膜形成方法以及金属布线的制造方法。 包括用于降低有机金属前体极性的中心金属，硼氢化物配体和胺配体的有机金属前驱体可以提供到基底上，并且可以被热分解以在基底上形成薄膜。 具有降低的极性的有机金属前体可以以恒定的流速提供给室，因此可以提高半导体制造工艺的稳定性和/或效率。
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6.发明申请Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same 有权形成金属氧化物层的方法，使用其形成栅极结构的方法以及使用其形成电容器的方法公开(公告)号：US20080213940A1
公开(公告)日：2008-09-04
申请号：US11985672
申请日：2007-11-16
申请人： Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
CPC分类号： C23C16/405 , C23C16/45553 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0228 , H01L21/3141 , H01L21/3142 , H01L21/31604 , H01L21/3162 , H01L21/31641 , H01L21/31645
摘要： Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NR1R2)3R3, wherein M is a metal; R1 and R2 are each independently hydrogen or alkyl; and R3 is selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.
摘要翻译： 本文提供形成金属氧化物层的方法，其包括向基板提供有机金属化合物和氧化剂以在基板上形成金属氧化物层。 有机金属化合物可以具有通式M（NR 1，R 2）3 N 3 R 3，其中M 是金属; R 1和R 2各自独立地为氢或烷基; 和R 3选自烷基，环烷基，杂环烷基，芳基和杂芳基。
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7.发明授权Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same 有权有机金属前体，具有该薄膜的薄膜，包含该薄膜的金属布线，形成薄膜的方法及使用其制造金属布线的方法公开(公告)号：US08268397B2
公开(公告)日：2012-09-18
申请号：US12219983
申请日：2008-07-31
申请人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
CPC分类号： C23C16/18 , C07F5/00 , C07F5/069 , C23C16/20 , Y10T428/24331
摘要： Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.
摘要翻译： 公开了可用于制造半导体器件的有机金属前体，具有该有机金属前体的薄膜，包括该薄膜的金属布线，薄膜形成方法以及金属布线的制造方法。 包括用于降低有机金属前体极性的中心金属，硼氢化物配体和胺配体的有机金属前驱体可以提供到基底上，并且可以被热分解以在基底上形成薄膜。 具有降低的极性的有机金属前体可以以恒定的流速提供给室，因此可以提高半导体制造工艺的稳定性和/或效率。
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8.发明申请Method of forming a thin film and methods of manufacturing a gate structure and a capacitor using same 审中-公开形成薄膜的方法和使用其制造栅极结构和电容器的方法公开(公告)号：US20080057224A1
公开(公告)日：2008-03-06
申请号：US11790445
申请日：2007-04-25
申请人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
IPC分类号： C23C8/00
摘要： A method of manufacturing a thin film includes providing a metal organic precursor onto a substrate where the metal organic precursor is heated to a temperature of about 60° C. to about 95° C. and has a saturated vapor pressure of about 1 Torr to about 5 Torr. An oxidizing agent including oxygen for oxidizing the metal organic precursor is provided onto the substrate. The metal organic precursor and the oxidizing agent are chemically reacted to form the thin film including metal oxide. The thin film is easily available in a gate insulation layer of a gate structure, a dielectric layer of a capacitor, and similar circuit components.
摘要翻译： 制造薄膜的方法包括将金属有机前体提供到基底上，其中将金属有机前体加热至约60℃至约95℃的温度，并具有约1托至约 5乇 将包含用于氧化金属有机前体的氧的氧化剂提供到基底上。 金属有机前体和氧化剂在化学上反应以形成包括金属氧化物的薄膜。 该薄膜可容易地用于栅极结构的栅极绝缘层，电容器的介电层和类似的电路部件。
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9.发明授权Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same 有权形成金属氧化物层的方法，使用其形成栅极结构的方法以及使用其形成电容器的方法公开(公告)号：US07648854B2
公开(公告)日：2010-01-19
申请号：US11985672
申请日：2007-11-16
申请人： Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
IPC分类号： H01L21/00 , H01L21/16 , H01L21/20 , H01L21/31 , H01L21/469
CPC分类号： C23C16/405 , C23C16/45553 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0228 , H01L21/3141 , H01L21/3142 , H01L21/31604 , H01L21/3162 , H01L21/31641 , H01L21/31645
摘要： Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NR1R2)3R3, wherein M is a metal; R1 and R2 are each independently hydrogen or alkyl; and R3 is selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.
摘要翻译： 本文提供形成金属氧化物层的方法，其包括向基板提供有机金属化合物和氧化剂以在基板上形成金属氧化物层。 有机金属化合物可以具有通式M（NR1R2）3R3，其中M是金属; R1和R2各自独立地为氢或烷基; 并且R 3选自烷基，环烷基，杂环烷基，芳基和杂芳基。
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10.发明申请Method of forming an ohmic layer and method of forming a metal wiring of a semiconductor device using the same 审中-公开形成欧姆层的方法和使用该欧姆层的半导体器件的金属布线的形成方法公开(公告)号：US20090233439A1
公开(公告)日：2009-09-17
申请号：US12382008
申请日：2009-03-05
申请人： Myung-Beom Park , Ki-Hag Lee , Hyun-Su Kim , Eun-Ok Lee , Kyoo-Chul Cho , Jung-Sik Choi , Byung-Hee Kim , Dae-Yong Kim
发明人： Myung-Beom Park , Ki-Hag Lee , Hyun-Su Kim , Eun-Ok Lee , Kyoo-Chul Cho , Jung-Sik Choi , Byung-Hee Kim , Dae-Yong Kim
IPC分类号： H01L21/768
CPC分类号： H01L21/28556 , C23C16/18 , H01L21/28562 , H01L21/76843
摘要： A metal organic precursor represented by a formula of R1-CpML is provided onto a substrate having a conductive pattern including silicon. Here, R1 is an alkyl group substituent of Cp, R1 including methyl, ethyl, propyl, pentamethyl, pentaethyl, diethyl, dimethyl or dipropyl, Cp is cyclopentadienyl, M includes nickel (Ni), cobalt (Co), titanium (Ti), platinum (Pt) zirconium (Zr) or ruthenium (Ru), and L is at least one ligand, the at least one ligand including a carbonyl. A deposition process is performed using the metal organic precursor to form a preliminary metal silicide layer and a metal layer on the substrate. The preliminary metal silicidation layer is formed on the conductive pattern. The preliminary metal silicide layer is transformed into a metal silicide layer.
摘要翻译： 将由式R1-CpML表示的金属有机前体提供到具有包括硅的导电图案的基板上。 这里，R1是Cp的烷基取代基，R1包括甲基，乙基，丙基，五甲基，五乙基，二乙基，二甲基或二丙基，Cp是环戊二烯基，M包括镍（Ni），钴（Co），钛（Ti） 铂（Pt）锆（Zr）或钌（Ru），L是至少一种配体，所述至少一种配体包括羰基。 使用金属有机前体进行沉积工艺，以在衬底上形成初步金属硅化物层和金属层。 在导电图案上形成预备金属硅化层。 将初级金属硅化物层转变成金属硅化物层。
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