公开(公告)号：US20120292587A1

公开(公告)日：2012-11-22

申请号：US13424880

申请日：2012-03-20

申请人： Kouji MATSUO ,  Noritake OHMACHI ,  Tomotaka ARIGA ,  Junichi WADA ,  Yoshio OZAWA

发明人： Kouji MATSUO ,  Noritake OHMACHI ,  Tomotaka ARIGA ,  Junichi WADA ,  Yoshio OZAWA

IPC分类号： H01L47/00

CPC分类号： H01L45/08 ,  H01L27/2463 ,  H01L45/1266 ,  H01L45/146

摘要： According to one embodiment, a nonvolatile memory device includes a memory cell. The memory cell includes a stacked film structure. The stacked film structure is capable of maintaining a first state or a second state. The first state includes a lower electrode film, a first memory element film provided on the lower electrode film and containing a first oxide and an upper electrode film provided on the first memory element film. The second state includes the lower electrode film, the first memory element film provided on the lower electrode film, a second memory element film provided on the first memory element film and containing a second oxide and the upper electrode film provided on the second memory element film.

摘要翻译： 根据一个实施例，非易失性存储器件包括存储单元。 存储单元包括层叠膜结构。 层叠膜结构能够保持第一状态或第二状态。 第一状态包括下电极膜，设置在下电极膜上并包含设置在第一存储元件膜上的第一氧化物和上电极膜的第一存储元件膜。 第二状态包括下电极膜，设置在下电极膜上的第一存储元件膜，设置在第一存储元件膜上并包含第二氧化物的第二存储元件膜，以及设置在第二存储元件膜上的上电极膜 。

公开(公告)号：US20160177468A1

公开(公告)日：2016-06-23

申请号：US14910453

申请日：2014-08-05

申请人： Takashi SATOH ,  Seiji SARAYAMA ,  Masahiro HAYASHI ,  Junichi WADA

发明人： Takashi SATOH ,  Seiji SARAYAMA ,  Masahiro HAYASHI ,  Junichi WADA

IPC分类号： C30B9/00 ,  C30B29/40

CPC分类号： C30B9/00 ,  C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B19/068 ,  C30B29/406

摘要： A method is for manufacturing a group 13 nitride crystal by a flux method. The method includes: placing a seed crystal and a mixed melt that contains an alkali metal or an alkali-earth metal and a group 13 element in a reaction vessel; and rotating the reaction vessel to stir the mixed melt. The reaction vessel includes a structure to stir the mixed melt. More than one seed crystals are installed point-symmetrically with respect to a central axis of the reaction vessel at positions other than the central axis such that a c plane of each of the seed crystals is substantially parallel to a bottom of the reaction vessel. The structure is installed point-symmetrically with respect to the central axis at at least part of the reaction vessel other than the central axis.

摘要翻译： 一种用于通过助熔剂法制造氮化镓族13族的方法。 该方法包括：将含有碱金属或碱土金属和13族元素的晶种和混合熔体放置在反应容器中; 并旋转反应容器以搅拌混合的熔体。 反应容器包括搅拌混合熔体的结构。 在除中心轴以外的位置处，相对于反应容器的中心轴点对称地安装了多于一个晶种，使得每个晶种的c面大致平行于反应容器的底部。 该结构在反应容器的至少一部分而不是中心轴线处相对于中心轴线点对称地安装。

公开(公告)号：US20120069625A1

公开(公告)日：2012-03-22

申请号：US13176188

申请日：2011-07-05

申请人： Junichi WADA

发明人： Junichi WADA

IPC分类号： G11C11/00 ,  H01L45/00

CPC分类号： H01L45/085 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/51 ,  G11C2213/54 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/1253 ,  H01L45/145

摘要： According to one embodiment, a resistance change element includes a first film provided on a first electrode side, a second film provided on a second electrode side, a barrier film sandwiched between the first film and the second film, and metal impurities added in the first or second film, the metal impurities migrating between the first and second films bi-directionally according to a direction of a first electric field generated between the first and second electrodes. The resistance change element has a first resistance state when the metal impurities are present in the first film, and the resistance change element has a second resistance state different from the first resistance state when the metal impurities are present in the second film.

摘要翻译： 根据一个实施例，电阻改变元件包括设置在第一电极侧的第一膜，设置在第二电极侧的第二膜，夹在第一膜和第二膜之间的阻挡膜，以及添加在第一膜中的金属杂质 或第二膜，所述金属杂质根据在所述第一和第二电极之间产生的第一电场的方向双向地在所述第一和第二膜之间迁移。 当金属杂质存在于第一膜中时，电阻变化元件具有第一电阻状态，并且当金属杂质存在于第二膜中时，电阻变化元件具有与第一电阻状态不同的第二电阻状态。

公开(公告)号：US20180213183A1

公开(公告)日：2018-07-26

申请号：US15745560

申请日：2016-05-16

申请人： Taro OKUYAMA ,  Junichi WADA

发明人： Taro OKUYAMA ,  Junichi WADA

IPC分类号： H04N7/14 ,  H04L29/06 ,  H04N7/15

CPC分类号： H04N7/147 ,  H04L65/1046 ,  H04L65/1069 ,  H04L65/403 ,  H04M3/51 ,  H04M3/567 ,  H04M2201/50 ,  H04N7/15

摘要： At an actual reception counter, a person in charge of reception can see looks and belongings of a visitor, and may guess a business of the visitor before the visitor reaches the reception counter. However, in communication between communication terminals, there is a problem about usability such that contents on one side cannot be confirmed on a communication terminal on the other side before requesting for communication. To solve the problem, the session control unit 58 of a management system 50 executes, when communication has been established between one or more communication terminals 10 on a customer side and communication terminals 10 on an operator side, control for starting transmission of content data of the communication terminals 10 on the customer side to the communication terminals 10 on the operator side. Based on a start command from the terminal 10 on the operator side, the session control unit 58 of the management system 50 executes control for starting transmission of content data of the communication terminals 10 on the customer side.

公开(公告)号：US20130243680A1

公开(公告)日：2013-09-19

申请号：US13798702

申请日：2013-03-13

申请人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Chiharu KIMURA ,  Naoya MIYOSHI ,  Akishige MURAKAMI ,  Junichi WADA

发明人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Chiharu KIMURA ,  Naoya MIYOSHI ,  Akishige MURAKAMI ,  Junichi WADA

IPC分类号： C01B21/064 ,  C01B21/06

CPC分类号： C01B21/064 ,  C01B21/0632 ,  C30B9/06 ,  C30B29/403 ,  C30B29/406

摘要： A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane.

摘要翻译： 13族氮化物晶体具有包含氮原子的六方晶系结构和选自B，Al，Ga，In和Tl中的至少一种类型的金属原子。 13族氮化物晶体在多个方向上具有基面位错。 基面位错的位错密度高于c面穿透位错的位错密度。

公开(公告)号：US20180139325A1

公开(公告)日：2018-05-17

申请号：US15574367

申请日：2016-05-20

申请人： Akihiro MIHARA ,  Junichi WADA

发明人： Akihiro MIHARA ,  Junichi WADA

IPC分类号： H04M3/51 ,  H04M3/56

CPC分类号： H04M3/5183 ,  G06Q10/107 ,  H04M1/72522 ,  H04M3/5133 ,  H04M3/567 ,  H04M2201/50 ,  H04N7/147 ,  H04N7/15 ,  H04N7/152

摘要： At an actual reception counter, for example, a person in charge of reception can see appearance and belongings of a visitor, and may guess the business of the visitor before the visitor reaches the reception counter. However, in communication between communication terminals, there is a problem about usability such that contents on one side cannot be confirmed on a communication terminal on the other side before requesting communication. To solve the problem, when communication has been established between one or more terminals on a customer side and a terminal on an operator side, the output control unit of the terminal on the operator side executes control for starting output of content data of the terminals on the customer side at the terminal itself. Based on a request for starting output by the terminal on the operator side, the output control unit of the terminal on the customer side executes control for starting output of content data of the terminal on the operator side.

公开(公告)号：US20170022629A1

公开(公告)日：2017-01-26

申请号：US15124794

申请日：2014-11-27

申请人： Takashi SATOH ,  Seiji SARAYAMA ,  Masahiro HAYASHI ,  Naoya MIYOSHI ,  Chiharu KIMURA ,  Junichi WADA

发明人： Takashi SATOH ,  Seiji SARAYAMA ,  Masahiro HAYASHI ,  Naoya MIYOSHI ,  Chiharu KIMURA ,  Junichi WADA

IPC分类号： C30B9/10 ,  C30B29/40

CPC分类号： C30B9/10 ,  C30B9/12 ,  C30B29/406 ,  C30B35/007

摘要： A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.

摘要翻译： 制造氮化镓晶体的方法包括通过将氮溶解在包含镓和钠的混合熔体中来生长氮化镓晶体5，并且通过使合金51和合金51反应而收集从包含镓和钠的合金51中分离的镓55 使钠离子并从合金中分离钠离子和镓55的液体52。

公开(公告)号：US20130240822A1

公开(公告)日：2013-09-19

申请号：US13607464

申请日：2012-09-07

申请人： Junichi WADA

发明人： Junichi WADA

IPC分类号： H01L45/00

CPC分类号： H01L45/145 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/165

摘要： A nonvolatile memory device includes a first film layer formed on a substrate, and a second film layer formed on the first film layer. The second film layer comprises a first oxide material having a first oxygen content, and a second oxide material disposed laterally of the first oxide material and having a second oxygen content that is greater than the first oxygen content. The memory device also includes a third film layer formed on the second film layer, and the third film layer is disposed on the first oxide material and exposes portions of the second oxide material.

摘要翻译： 非易失性存储器件包括形成在衬底上的第一膜层和形成在第一膜层上的第二膜层。 第二膜层包括具有第一氧含量的第一氧化物材料和设置在第一氧化物材料侧面并具有大于第一氧含量的第二氧含量的第二氧化物材料。 存储装置还包括形成在第二膜层上的第三膜层，并且第三膜层设置在第一氧化物材料上并暴露第二氧化物材料的部分。

公开(公告)号：US20110037043A1

公开(公告)日：2011-02-17

申请号：US12813664

申请日：2010-06-11

申请人： Junichi WADA

发明人： Junichi WADA

IPC分类号： H01L45/00 ,  H01L21/16

CPC分类号： G11C13/0007 ,  G11C2213/32 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

摘要： According to one embodiment, a nonvolatile memory device includes a first wire, a second wire and a nonvolatile memory cell. The first wire is formed to extend in a first direction, and the second wire is formed at height different from height of the first wire and to extend in a second direction. The nonvolatile memory cell is arranged to be held between the first wire and the second wire in a poison where the first wire and the second wire cross. The nonvolatile memory cell includes a nonvolatile storage layer and a current limiting resistance layer connected in series to the nonvolatile storage layer and having resistance of 1 kilo-ohm to 1 mega-ohm.

摘要翻译： 根据一个实施例，非易失性存储器件包括第一线，第二线和非易失性存储单元。 第一线形成为沿第一方向延伸，并且第二线形成在与第一线的高度不同的高度处并且沿第二方向延伸。 非易失性存储单元被布置成以第一线和第二线交叉的毒药的方式保持在第一线和第二线之间。 非易失性存储单元包括与非易失性存储层串联连接并具有1千欧欧至1兆欧的电阻的非易失性存储层和限流电阻层。

公开(公告)号：US20100216305A1

公开(公告)日：2010-08-26

申请号：US12614086

申请日：2009-11-06

申请人： Junichi WADA

发明人： Junichi WADA

IPC分类号： H01L21/3205

CPC分类号： H01L21/76876 ,  H01L21/28556 ,  H01L21/76814 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76877 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a ruthenium (Ru) film at least on a bottom surface of the opening; and filling in the opening with a tungsten (W) film in which the Ru film is formed, according to a chemical vapor deposition (CVD) method by hydrogen (H2) reduction.

摘要翻译： 一种制造半导体器件的方法，包括在衬底上形成电介质膜; 在电介质膜中形成开口; 至少在所述开口的底面上形成钌（Ru）膜; 根据化学气相沉积（CVD）法通过氢（H2）还原，用形成Ru膜的钨（W）膜填充开口。