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18 条记录 (耗时 0.028 秒)

    Processing method and apparatus using focused energy beam
    1.
    发明授权
    Processing method and apparatus using focused energy beam 失效
    使用聚焦能量束的加工方法和装置

    公开(公告)号：US5683547A

    公开(公告)日：1997-11-04

    申请号：US273780

    申请日：1994-07-12

    申请人： Junzou Azuma ,  Fumikazu Itoh ,  Satoshi Haraichi ,  Akira Shimase ,  Junichi Mori ,  Takahiko Takahashi ,  Emiko Uda

    发明人： Junzou Azuma ,  Fumikazu Itoh ,  Satoshi Haraichi ,  Akira Shimase ,  Junichi Mori ,  Takahiko Takahashi ,  Emiko Uda

    IPC分类号： H01J37/305 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/30

    CPC分类号： H01L21/76892 ,  H01J37/3056 ,  H01L21/32136 ,  H01L21/76879 ,  H01J2237/006 ,  H01J2237/31744

    摘要： A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas different in composition from any conventional one is employed and the gas is uniformly supplied to an etching area and at least one of the components of such a mixed gas is a spontaneous reactive gas for use in etching the sample spontaneously and isotropically. With this arrangement, it is possible to subject to local etching a material for which the local etching has been impossible to provide since a single etching gas causes a reaction too fierce or causes almost nearly no reaction.

    摘要翻译： 一种处理方法和装置，其特征在于，在蚀刻气体气氛中，通过用离子束或电子束等聚焦能量束照射样品，使用聚焦能量束进行聚焦能量束照射区域的局部能量束处理。 作为蚀刻气体，使用与常规方法不同组成的混合气体，并将气体均匀地供给到蚀刻区域，并且这种混合气体的至少一个成分是用于蚀刻样品的自发反应气体 自发和各向同性。 通过这种布置，由于单一蚀刻气体引起反应太剧烈或几乎几乎不发生反应，因此可以局部蚀刻局部蚀刻不可能提供的材料。

    Optical mask and method of correcting the same
    3.
    发明授权
    Optical mask and method of correcting the same 失效
    光学掩模及其校正方法

    公开(公告)号：US5439763A

    公开(公告)日：1995-08-08

    申请号：US22909

    申请日：1993-02-26

    申请人： Akira Shimase ,  Junzou Azuma ,  Satoshi Haraichi ,  Fumikazu Itoh ,  Yasuhiro Koizumi

    发明人： Akira Shimase ,  Junzou Azuma ,  Satoshi Haraichi ,  Fumikazu Itoh ,  Yasuhiro Koizumi

    IPC分类号： G03F1/26 ,  G03F1/30 ,  G03F1/72 ,  G03F9/00

    CPC分类号： G03F1/72 ,  G03F1/26 ,  G03F1/30

    摘要： An optical mask for a projection optical system and a method of correcting the mask wherein the mask includes a light intercepting pattern formed on a transparent substrate and a phase shifter for changing the phase of an exposure light provided at predetermined openings of the light intercepting pattern. An etching stopper film which transmits the exposure light is provided between said phase shifter and said light intercepting pattern and for correction of the mask a focused ion beam is utilized for removal of defects by the phase shifter.

    摘要翻译： 一种用于投影光学系统的光学掩模和一种校正掩模的方法，其中掩模包括形成在透明基板上的遮光图案和用于改变设置在遮光图案的预定开口处的曝光光的相位的移相器。 在所述移相器和所述遮光图案之间设置有曝光光的蚀刻停止膜，并且为了校正掩模，使用聚焦离子束来消除由移相器产生的缺陷。

    Ion beam processing method and apparatus
    4.
    发明授权
    Ion beam processing method and apparatus 失效
    离子束处理方法和装置

    公开(公告)号：US5223109A

    公开(公告)日：1993-06-29

    申请号：US766328

    申请日：1991-09-27

    申请人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Junzou Azuma

    发明人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Junzou Azuma

    IPC分类号： B23K15/00 ,  H01J37/305

    CPC分类号： H01J37/3056 ,  H01J2237/202 ,  H01J2237/31

    摘要： There is disclosed an ion beam processing method of processing a rotating workpiece for a very small-size rotary member, using an ion beam or a focused ion beam. Apparatus for performing this method is also disclosed. In the formation of a product having a non-circular cross-section, when the amount of application of the ion beam is kept constant, the rotational angular velocity of the workpiece is varied in accordance with the rotational angular position of the workpiece. On the other hand, when the rotational angular velocity of the workpiece is kept constant, the amount of application of the ion beam is varied. When it is difficult to align the axis of the workpiece with the axis of rotation of a workpiece holder, the focused ion beam is applied in accordance with the oscillation of the workpiece.

    摘要翻译： 公开了使用离子束或聚焦离子束来处理非常小尺寸的旋转构件的旋转工件的离子束处理方法。 还公开了用于执行该方法的装置。 在形成具有非圆形横截面的产品时，当离子束的施加量保持恒定时，工件的旋转角速度根据工件的旋转角度位置而变化。 另一方面，当工件的旋转角速度保持恒定时，离子束的施加量变化。 当难以将工件的轴线与工件保持架的旋转轴对齐时，根据工件的振动施加聚焦离子束。

    Phase shift mask, method of correcting the same and apparatus for carrying out the method
    5.
    发明授权
    Phase shift mask, method of correcting the same and apparatus for carrying out the method 失效
    相移掩模，校正方法以及执行该方法的装置

    公开(公告)号：US5358806A

    公开(公告)日：1994-10-25

    申请号：US854861

    申请日：1992-03-19

    申请人： Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Junzou Azuma ,  Yasuhiro Koizumi

    发明人： Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Junzou Azuma ,  Yasuhiro Koizumi

    IPC分类号： G03F1/26 ,  G03F1/74 ,  G03F9/00

    CPC分类号： H01J37/228 ,  G03F1/74 ,  H01J37/3056 ,  G03F1/26 ,  H01J2237/2482 ,  H01J2237/30466

    摘要： A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrate, which is resistant to an etching to which the phase shifter is subjected and transparent for exposure light is corrected by selectively etching a defective portion of the phase shifter, having a lacking type defect, with respect to the etching stopper layer along the whole thickness of the phase shifter and by perforating a portion of the etching stopper layer and the transparent substrate positioned under the etched defective portion by a depth which corresponds to a magnitude of an optical path of the phase shifter for the exposure light, the etching being a reactive etching which uses charged particle beam and a reactive gas and, the bottom surface of a portion etched being flattened by utilizing a fact that the phase shifter is selectively etched.

    摘要翻译： 具有设置在透明基板上的移相器的相移掩模的缺陷形成为预定图案并且用于移动透过其的曝光光的相位和设置在移相器和透明基板之间的蚀刻阻挡层， 对于移相器经受的蚀刻和曝光的透明度的蚀刻是通过沿相位的整个厚度相对于蚀刻停止层选择性蚀刻缺陷型缺陷的相移器的缺陷部分而被校正的 并且通过将位于蚀刻的缺陷部分下方的蚀刻阻挡层和透明基板的一部分穿孔相当于用于曝光光的移相器的光路的大小的深度，蚀刻是使用的反应性蚀刻 带电粒子束和反应性气体，并且通过利用被蚀刻的部分的底表面变平 移相器被选择性蚀刻的事实。

    Sample processing apparatus and method for removing charge on sample through light irradiation
    10.
    发明授权
    Sample processing apparatus and method for removing charge on sample through light irradiation 有权
    用于通过光照射去除样品上的电荷的样品处理装置和方法

    公开(公告)号：US06507029B1

    公开(公告)日：2003-01-14

    申请号：US09255700

    申请日：1999-02-23

    申请人： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Asahiro Kuni ,  Hiroya Koshishiba

    发明人： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Asahiro Kuni ,  Hiroya Koshishiba

    IPC分类号： H01J3730

    CPC分类号： B82Y15/00 ,  H01J37/026 ,  H01J2237/0047 ,  H01J2237/28

    摘要： In an electron particle machine for observing, inspecting, processing or analyzing a semiconductor wafer as a substrate or a sample, a light source is installed in a preparation chamber. A chucking stage for chucking the semiconductor wafer with a chuck using static electricity is provided with parts for connecting to earth such that they are in contact with the chucked semiconductor wafer. After the chuck using static electricity is released after observation, inspection, process or analysis, a surface of the semiconductor wafer and the parts for connecting to earth are irradiated with light from the light source. This provides conductivity to the surface of the semiconductor wafer, so that charge accumulated on the semiconductor wafer is removed from the surface through the parts for connecting to earth.

    摘要翻译： 在用于观察，检查，处理或分析作为基板或样品的半导体晶片的电子粒子机中，将光源安装在准备室中。 使用静电用卡盘夹住半导体晶片的夹持台设置有用于连接到地面的部件，使得它们与夹持的半导体晶片接触。 在观察，检查，处理或分析之后释放使用静电的卡盘后，用来自光源的光照射半导体晶片的表面和用于连接到地球的部分。 这为半导体晶片的表面提供导电性，从而通过用于连接到地球的部件从表面去除积聚在半导体晶片上的电荷。