摘要:
In an electron particle machine for observing, inspecting, processing or analyzing a semiconductor wafer as a substrate or a sample, a light source is installed in a preparation chamber. A chucking stage for chucking the semiconductor wafer with a chuck using static electricity is provided with parts for connecting to earth such that they are in contact with the chucked semiconductor wafer. After the chuck using static electricity is released after observation, inspection, process or analysis, a surface of the semiconductor wafer and the parts for connecting to earth are irradiated with light from the light source. This provides conductivity to the surface of the semiconductor wafer, so that charge accumulated on the semiconductor wafer is removed from the surface through the parts for connecting to earth.
摘要:
A method and an apparatus for inspecting or measuring a sample based on charged-particle beam are provided to relieve charge-up of the sample, so that high-quality electron image is obtained. A UV light irradiation optical system is controlled by an irradiation controller, scanning of the charged-particle beam is controlled by a scanning controller, and the irradiation controller and the scanning controller are controlled by a general controller. They are mutually synchronized, and a signal from an electron detector is imaged by an image slicing circuit and an image processing circuit.
摘要:
In accordance with the present invention, there is provided a pattern defect detecting apparatus using a scanning and transmission electron microscope, comprising an electron gun for accelerating an electron beam with high energy enough to transmit it through a sample and for radiating the accelerated electron beam, a condenser lens for focusing the electron beam generated by said electron gun, a beam deflection coil for deflecting the electron beam focused by said condenser lens, an objective lens for further focusing the electron beam deflected by said beam deflection coil onto a fixed spot, an XY stage for disposing the sample so as to be opposed to said objective lens, said XY stage being movable in X and Y directions in a step and repeat manner, a sample chamber for housing the XY stage in vacuum, said sample chamber including at least the outlet of the electron beam of said objective lens, an electron beam detector for detecting electron beams transmitted through said sample, said electron beam detector being fixed to a stationary member such as said chamber or a lens barrel, and defect detecting means for scanning the electron beam by using said beam deflection coil for each step and repeat operation of said XY stage, for comparing a video signal obtained from said electron beam detector with a reference pattern read out from memory means, and for thereby detecting a defect of the sample.
摘要:
The present invention provides a scanning electron microscope (SEM) or optical inspection method and apparatus which correct differences in brightness between comparison images and thus which is capable of detecting a fine defect with a high degree of reliability without causing any false defect detection. According to the present invention, the brightness values of a pattern, which should be essentially the same, contained in two detected images to be compared are corrected in such a manner that, even if there may be a brightness difference in a portion free from defects, the brightness difference is reduced to such a degree so that it can be recognized as a normal portion. Also, a limit for the amount of correction is furnished in advance, and correction exceeding such limit value is not performed. Such correction prevents the difference in brightness that should be permitted as non-defective from being falsely recognized as a defect without overlooking great differences in brightness due to a defect.
摘要:
An apparatus for processing a defect candidate image, including: an imager for taking an enlarged image of a specimen; an image processor for processing the image taken by the imager to detect defect candidates existing on the specimen and classify the detected defect candidates into one of plural defect classes; a memory for storing information of the defect candidates including the images of the defect candidates and the classified defect class data outputted from the image processor; and a display unit having a display screen for displaying information stored in the memory, wherein the display unit displays an image of the defect candidates together with the defect class data stored in the memory and the displayed defect class data is changeable on the display screen, and the memory changes the stored defect class data of the displayed defect candidate to the changed defect class data.
摘要:
Conventionally, defect data outputted by an inspection system comprised only characteristic quantitative data, such as coordinate data, area, and projected length, and only the coordinate data for moving to a defect location could be utilized effectively. By contrast, the present invention, by using image data in addition to characteristic quantitative data as the defect data for an inspection system, enables the retrieval of image data via an outside results confirmation system. Further, in the case of defect data of a plurality of substrates, it is enabled to display a defect image during inspection by the fact that similar defects are retrieved via images and retrieval results are displayed as trends makes it possible to display a defect image during inspection by searching similar defects on images and displaying them as a trend, designating a substrate on the trend, thereby displaying the defect map thereof and designating a defect on the defect map.
摘要:
The present invention provides techniques, including a method and system, for inspecting for defects in a circuit pattern on a semi-conductor material. One specific embodiment provides a trial inspection threshold setup method, where the initial threshold is modified after a defect analysis of trial inspection stored data. The modified threshold is then used as the threshold in actual inspection.
摘要:
In business process diagnosis, answers to questions is improved in their accuracy, and an accurate result of diagnosis is obtained. A computer diagnoses a business process of an organization based on answers to questions. The diagnosis includes a first answer reception step in which a first question sheet containing common questions is displayed to receive answers to said common questions and to receive questions proper to the organization, and then a second question sheet containing said common questions, said answers to the common questions, and said questions proper to the organization is generated; a second answer reception step in which said second question sheet is displayed to receive answers to said questions proper to the organization, and then a third question sheet containing said common questions, said answers to the common questions, said questions proper to the organization, and said answers to the questions proper to the organization is generated; and a diagnosis step in which the business process of said organization is diagnosed based on the answers to said common questions and the answers to said questions proper to the organization, with said answers to said common questions and said answers to said questions proper to the organization being filled in said third question sheet.
摘要:
In the detecting system for irradiating the electron beam and detecting the secondary electron thereof, an area of the detector is an important factor for high-speed detection. For the technique of the current electron optical system and detector, a detector of the area larger than a constant area is necessary and detection of 200 Msps or more by receiving limitation on the frequency inversely proportional to the area is substantially difficult. For example, for detection at 400 Msps under the condition that the required area is 4 mm square and the rate for 4 mm square is defined as 150 Msps, four discrete high-speed detectors of 2 mm square are arranged to amplify and then add the signals for A/D conversion. Otherwise, the secondary electron is sequentially inputted to the detector of 8 mm square with the secondary electron deflector, the secondary electron is detected at 100 Msps and arranged after the A/D conversion. In any case, the area of 4 mm square and rate of 400 Msps can be attained.
摘要:
A method for inspecting a pattern formed on a substrate, includes the steps of moving a table along a first direction on which a substrate to be inspected is mounted, irradiating a converged electron beam on the substrate by scanning the converged electron beam along a second direction which is perpendicular to the first direction; detecting an electron radiated from the substrate by the irradiation of the converged electron beam in which the movement of the table and the scanning of the converged electron beam are synchronized; forming a digital image of the substrate from the detected electron; improving a quality of the digital image by filtering the digital image; and detecting a defect of a pattern formed on the substrate by using the improved quality digital image.