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    Method for improving the planarity of shallow trench isolation
    1.
    发明授权
    Method for improving the planarity of shallow trench isolation 失效
    提高浅沟槽隔离平面度的方法

    公开(公告)号：US5943590A

    公开(公告)日：1999-08-24

    申请号：US929706

    申请日：1997-09-15

    申请人： Jyh-Lih Wang ,  Yung-Shun Chen

    发明人： Jyh-Lih Wang ,  Yung-Shun Chen

    IPC分类号： H01L21/3105 ,  H01L21/762 ,  H01L21/76

    CPC分类号： H01L21/31053 ,  H01L21/76229 ,  H01L21/76232 ,  Y10S148/05

    摘要： A method for improving the planarity of a semiconductor chip using chemical-mechanical polishing during a shallow trench isolation process is described. Specifically, an polish-stop layer, preferably of silicon nitride, is formed over a semiconductor wafer (or optionally formed over a pad oxide layer formed on the wafer). A cap layer, preferably of polysilicon, is then formed over the polish-stop layer. The active regions of the chip are defined, preferably using a photoresist mask by photolithography. The wafer, polish-stop and cap layers are then etched, between the active regions, to form shallow trenches. A lining dielectric layer, preferably an oxide, is formed over the etched and non-etched regions to fill the shallow trenches for isolation purposes. The dielectric layer has an etching rate at least three times greater than the etching rate of cap layer. When polysilicon is selected as the cap layer and oxide is selected as the dielectric layer, the selectivity rate is greater than ten. However, the conventional oxide dielectric/nitride layer etching selectivity rate is less than three. Accordingly, the present invention provides a far greater etching selectivity rate than the prior art. In addition, the polish rate of the cap layer is much higher that that of the polish-stop layer. Therefore, the cap layer can be easily removed which reduces the CMP time while minimizing the dishing effect.

    摘要翻译： 描述了在浅沟槽隔离工艺期间使用化学机械抛光改善半导体芯片的平面性的方法。 具体而言，在半导体晶片（或任选地形成在晶片上形成的焊盘氧化物层上）上形成优选氮化硅的抛光停止层。 然后在抛光停止层上形成覆盖层，优选多晶硅。 限定芯片的有源区，优选使用通过光刻法的光致抗蚀剂掩模。 然后在活性区域之间蚀刻晶片，抛光停止层和盖层，以形成浅沟槽。 在蚀刻和非蚀刻区域上形成衬里介电层，优选氧化物，以填充浅沟槽用于隔离目的。 电介质层的蚀刻速率比盖层的蚀刻速度高至少三倍。 当选择多晶硅作为覆盖层，并且选择氧化物作为电介质层时，选择率大于10。 然而，传统的氧化物介质/氮化物层蚀刻选择率小于3。 因此，本发明提供比现有技术更大的蚀刻选择速率。 此外，盖层的抛光速率比抛光停止层的抛光速率高得多。 因此，可以容易地去除盖层，这降低了CMP时间，同时最小化了凹陷效应。

    Ratchet wrench
    3.
    发明授权
    Ratchet wrench 有权

    公开(公告)号：US11345012B2

    公开(公告)日：2022-05-31

    申请号：US16695908

    申请日：2019-11-26

    申请人： Yung-Shun Chen ,  Cheng-Chou Wu

    发明人： Yung-Shun Chen ,  Cheng-Chou Wu

    IPC分类号： B25G1/08 ,  B25B13/46

    摘要： A ratchet wrench is provided, including: a main body and a handling assembly. The main body includes a head portion being assembled with a ratchet head and a handling portion remote from the head portion. The handling assembly includes a casing coveringly disposed on the handling portion, and the casing defines a receiving space which is configured to receive at least one object and has at least one opening disposed therethrough. Part of an outer surface of the handling portion is flush with or protrusive beyond the at least one opening, and a material of the handling portion is different from a material of the casing.

    Method for forming radio frequency identification tag on packing bag and device therefor
    4.
    发明授权
    Method for forming radio frequency identification tag on packing bag and device therefor 有权
    在包装袋上形成射频识别标签的方法及其装置

    公开(公告)号：US07854245B2

    公开(公告)日：2010-12-21

    申请号：US12232408

    申请日：2008-09-17

    申请人： Yung-Shun Chen

    发明人： Yung-Shun Chen

    IPC分类号： B65B9/02 ,  B65B9/06 ,  B29C65/02

    CPC分类号： G06K19/07749 ,  G06K19/07718 ,  G06K19/07745 ,  H01L2924/0002 ,  Y10T156/1002 ,  Y10T156/171 ,  Y10T156/1715 ,  Y10T156/1734 ,  H01L2924/00

    摘要： A method for forming a radio frequency identification (RFID) tag on a packing bag is disclosed and includes the steps of: equidistantly attaching RFID tags to a release film, one by one, to form a roll of tag web; installing the roll of tag web in a packing bag forming device to move the release film along a feeding direction of a packing material; changing a moving direction of the release film for peeling the RFID tags from the release film; intermittently pressing on the RFID tags for attaching the RFID tags to the packing material; bonding the RFID tags to the packing material with a melting technology; and processing the packing material by folding, sealing, and cutting to form packing bags securely installed with the RFID tags. A packing bag forming device for carrying out the method is also disclosed.

    摘要翻译： 公开了一种在包装袋上形成射频识别（RFID）标签的方法，包括以下步骤：将RFID标签一个一个地等离子地安装到剥离膜上，形成一卷标签网; 将卷筒纸卷装在包装袋形成装置中，沿着包装材料的进给方向移动隔离膜; 改变用于剥离RFID标签的脱模膜的移动方向; 间歇地按压RFID标签以将RFID标签附着到包装材料上; 用熔化技术将RFID标签粘合到包装材料上; 并通过折叠，密封和切割来处理包装材料，以形成安装有RFID标签的包装袋。 还公开了一种用于实施该方法的包装袋形成装置。

    Method for forming radio frequency identification tag on packing bag and device therefor
    5.
    发明申请
    Method for forming radio frequency identification tag on packing bag and device therefor 有权
    在包装袋上形成射频识别标签的方法及其装置

    公开(公告)号：US20090126861A1

    公开(公告)日：2009-05-21

    申请号：US12232408

    申请日：2008-09-17

    申请人： Yung-Shun Chen

    发明人： Yung-Shun Chen

    IPC分类号： B65H75/34

    CPC分类号： G06K19/07749 ,  G06K19/07718 ,  G06K19/07745 ,  H01L2924/0002 ,  Y10T156/1002 ,  Y10T156/171 ,  Y10T156/1715 ,  Y10T156/1734 ,  H01L2924/00

    摘要： A method for forming a radio frequency identification (RFID) tag on a packing bag is disclosed and includes the steps of: equidistantly attaching RFID tags to a release film, one by one, to form a roll of tag web; installing the roll of tag web in a packing bag forming device to move the release film along a feeding direction of a packing material; changing a moving direction of the release film for peeling the RFID tags from the release film; intermittently pressing on the RFID tags for attaching the RFID tags to the packing material; bonding the RFID tags to the packing material with a melting technology; and processing the packing material by folding, sealing, and cutting to form packing bags securely installed with the RFID tags. A packing bag forming device for carrying out the method is also disclosed.

    摘要翻译： 公开了一种在包装袋上形成射频识别（RFID）标签的方法，包括以下步骤：将RFID标签一个一个地等离子地安装到剥离膜上，形成一卷标签网; 将卷筒纸卷装在包装袋形成装置中，沿着包装材料的进给方向移动隔离膜; 改变用于剥离RFID标签的脱模膜的移动方向; 间歇地按压RFID标签以将RFID标签附着到包装材料上; 用熔化技术将RFID标签粘合到包装材料上; 并通过折叠，密封和切割来处理包装材料，以形成安装有RFID标签的包装袋。 还公开了一种用于实施该方法的包装袋形成装置。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20080268602A1

    公开(公告)日：2008-10-30

    申请号：US12013528

    申请日：2008-01-14

    申请人： Chien-Li Cheng ,  Sun-Jay Chang ,  Tung-Heng Hsieh ,  Yung-Shun Chen

    发明人： Chien-Li Cheng ,  Sun-Jay Chang ,  Tung-Heng Hsieh ,  Yung-Shun Chen

    IPC分类号： H01L21/336 ,  H01L21/28

    CPC分类号： H01L29/6656 ,  H01L29/665 ,  H01L29/6653

    摘要： A method of fabricating a semiconductor device is disclosed. The method of fabricating a semiconductor device provides a semiconductor substrate; forming a gate stack overlying the semiconductor substrate; forming spacers each having a first inner spacer and a second outer spacer on sidewalls of the gate stack; forming a protective layer on sidewalls of the spacers, covering a part of the semiconductor substrate, wherein an etching selectivity of the protective layer is higher than that of the first inner spacer.

    摘要翻译： 公开了制造半导体器件的方法。 制造半导体器件的方法提供半导体衬底; 形成覆盖在半导体衬底上的栅叠层; 每个在所述栅极叠层的侧壁上具有第一内隔离物和第二外隔离物的隔离物; 在所述间隔物的侧壁上形成保护层，覆盖所述半导体衬底的一部分，其中所述保护层的蚀刻选择性高于所述第一内衬垫的蚀刻选择性。

    Utility knife
    9.
    发明授权
    Utility knife 有权

    公开(公告)号：US11413773B1

    公开(公告)日：2022-08-16

    申请号：US17156070

    申请日：2021-01-22

    申请人： MING SHIN TOOLS CO., LTD. ,  Yung-Shun Chen ,  Cheng-Chou Wu

    发明人： Yung-Shun Chen ,  Cheng-Chou Wu

    IPC分类号： B26B5/00 ,  B26B1/08

    摘要： A utility knife is provided, including: a housing, including first and second compartments; a blade holder, movably received within the first compartment; a blade storing carrier, detachably inserted in the second compartment, including a receiving portion for receiving at least one spare blade; an elastic unit, disposed between the housing and the blade storing carrier; and a locking mechanism, including a base body disposed to the housing, a movable member attached to the base body and movable between locking and release positions, a first engaging member disposed on the movable member and a second engaging member disposed on the receiving portion and releasably engagable with the first engaging member, when the is second engaging member is disengaged from the second engaging member, the elastic unit biases the receiving portion to eject the blade storing carrier.

    Conductive antenna structure and method for making the same
    10.
    发明申请
    Conductive antenna structure and method for making the same 审中-公开
    导电天线结构及其制造方法

    公开(公告)号：US20070241966A1

    公开(公告)日：2007-10-18

    申请号：US11403887

    申请日：2006-04-14

    申请人： Yung-Shun Chen

    发明人： Yung-Shun Chen

    IPC分类号： H01Q1/38

    CPC分类号： H05K3/048 ,  H05K1/0393 ,  H05K2203/097

    摘要： A conductive antenna structure and method for making the same, wherein the method includes the following steps: (a) providing a plastic film substrate: (b) performing a rinsing coating material printing process to let the rinsing coating material position on the plastic film substrate and appear a predetermined antenna pattern; (c) performing an evaporating process for the plastic film substrate to provide a conductive layer thereon; (d) performing a rinsing process for the plastic film substrate to separate the rinsing coating material from the plastic film substrate and let the conductive layer position on the antenna pattern. Therefore, the conductive antenna structure made by the use of the above-mentioned method includes a plastic film substrate made of Polyethylene Terephthalate (PET) as well as a conductive antenna that is made of conductive material and is connected to the surface of the plastic film substrate, and has a predetermined first thickness.

    摘要翻译： 导电天线结构及其制造方法，其特征在于，包括以下步骤：（a）提供塑料薄膜基板;（b）进行冲洗涂料印刷工序，使冲洗涂料在塑料薄膜基材上的位置 并出现预定的天线图案; （c）对塑料薄膜基材进行蒸发处理以在其上提供导电层; （d）对塑料薄膜基材进行冲洗处理，以将漂洗涂料从塑料薄膜基材上分离出来，并使天线图案上的导电层位置。 因此，通过使用上述方法制造的导电天线结构包括由聚对苯二甲酸乙二醇酯（PET）制成的塑料膜基片以及由导电材料制成并连接到塑料膜表面的导电天线 基板，并且具有预定的第一厚度。