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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150263103A1

    公开(公告)日：2015-09-17

    申请号：US14215257

    申请日：2014-03-17

    申请人： Kabushiki Kaisha Toshiba

    发明人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Takeshi Uchihara ,  Takaaki Yasumoto ,  Naoko Yanase ,  Tasuku Ono

    IPC分类号： H01L29/205 ,  H01L29/51 ,  H01L27/06 ,  H01L29/778 ,  H01L29/20

    CPC分类号： H01L27/0605 ,  H01L27/085 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/7787 ,  H01L29/7832

    摘要： A semiconductor device according to an embodiment includes a first semiconductor layer including a first nitride semiconductor, a second semiconductor layer on the first semiconductor layer including a second nitride semiconductor, a source electrode, a drain electrode, a first gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode having a schottky junction, a second gate electrode provided above the second semiconductor layer intervening an insulating film, provided between the source electrode and the first gate electrode, electrically connected with the first gate electrode, and a third gate electrode provided above the second semiconductor layer intervening an insulating film, provided between the drain electrode and the first gate electrode, electrically connected with the first gate electrode. A first transistor structure has a first threshold value, a second transistor structure has a second threshold value, and a third transistor structure has a third threshold value.

    摘要翻译： 根据实施例的半导体器件包括：第一半导体层，包括第一氮化物半导体，第一半导体层上的第二半导体层，包括第二氮化物半导体，源极，漏极，设置在第二半导体上的第一栅电极 位于源电极和具有肖特基结的漏电极之间的第二栅电极，设置在介于绝缘膜的第二半导体层之上的第二栅电极，设置在与第一栅电极电连接的源电极和第一栅电极之间， 第三栅电极，设置在设置在漏电极和第一栅电极之间的绝缘膜的第二半导体层上方，与第一栅电极电连接。 第一晶体管结构具有第一阈值，第二晶体管结构具有第二阈值，第三晶体管结构具有第三阈值。

    HEMT semiconductor device
    4.
    发明授权
    HEMT semiconductor device 有权
    HEMT半导体器件

    公开(公告)号：US09054171B2

    公开(公告)日：2015-06-09

    申请号：US14201641

    申请日：2014-03-07

    申请人： Kabushiki Kaisha Toshiba

    发明人： Tetsuya Ohno ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Takeshi Uchihara ,  Toshiyuki Naka ,  Takaaki Yasumoto ,  Naoko Yanase ,  Shingo Masuko ,  Tasuku Ono

    IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/20 ,  H01L29/06

    CPC分类号： H01L29/7786 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

    摘要： In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor layer of a second conductivity type including a first upper portion in contact with the first semiconductor layer, a second upper portion located at a lower position than the first upper portion, a first side portion located between the first upper portion and the second upper portion, and a second side portion located at a lower position than the first side portion.

    摘要翻译： 在一个实施例中，半导体器件包括第一导电类型或固有类型的第一半导体层。 该器件还包括设置在第一半导体层上方的第一导电类型或固有类型的第二半导体层。 该器件还包括第二导电类型的第三半导体层，包括与第一半导体层接触的第一上部，位于比第一上部更低的第二上部，位于第一上部之间的第一侧部 部分和第二上部，以及位于比第一侧部低的位置的第二侧部。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150069468A1

    公开(公告)日：2015-03-12

    申请号：US14201641

    申请日：2014-03-07

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Tetsuya Ohno ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Takeshi Uchihara ,  Toshiyuki Naka ,  Takaaki Yasumoto ,  Naoko Yanase ,  Shingo Masuko ,  Tasuku Ono

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7786 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

    摘要： In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor layer of a second conductivity type including a first upper portion in contact with the first semiconductor layer, a second upper portion located at a lower position than the first upper portion, a first side portion located between the first upper portion and the second upper portion, and a second side portion located at a lower position than the first side portion.

    摘要翻译： 在一个实施例中，半导体器件包括第一导电类型或固有类型的第一半导体层。 该器件还包括设置在第一半导体层上方的第一导电类型或固有类型的第二半导体层。 该器件还包括第二导电类型的第三半导体层，包括与第一半导体层接触的第一上部，位于比第一上部更低的第二上部，位于第一上部之间的第一侧部 部分和第二上部，以及位于比第一侧部低的位置的第二侧部。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09165922B2

    公开(公告)日：2015-10-20

    申请号：US14015986

    申请日：2013-08-30

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Takeshi Uchihara ,  Naoko Yanase ,  Toshiyuki Naka ,  Tetsuya Ohno ,  Tasuku Ono

    IPC分类号： H01L27/06 ,  H01L27/095

    CPC分类号： H01L27/0629 ,  H01L27/095 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/00 ,  H01L2924/00014

    摘要： According to an embodiment, a semiconductor device includes a conductive substrate, a Schottky barrier diode, and a field-effect transistor. The Schottky barrier diode is mounted on the conductive substrate and includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the conductive substrate. The field-effect transistor is mounted on the conductive substrate and includes a source electrode, a drain electrode, and a gate electrode. The source electrode of the field-effect transistor is electrically connected to the cathode electrode of the Schottky barrier diode. The gate electrode of the field-effect transistor is electrically connected to the anode electrode of the Schottky barrier diode.

    摘要翻译： 根据实施例，半导体器件包括导电衬底，肖特基势垒二极管和场效应晶体管。 肖特基势垒二极管安装在导电基板上，并包括阳极电极和阴极电极。 阳极电极与导电性基板电连接。 场效应晶体管安装在导电基板上，包括源电极，漏电极和栅电极。 场效应晶体管的源电极电连接到肖特基势垒二极管的阴极。 场效晶体管的栅电极与肖特基势垒二极管的阳极电连接。

    POWER SUPPLY CIRCUIT
    7.
    发明申请
    POWER SUPPLY CIRCUIT 审中-公开
    电源电路

    公开(公告)号：US20150263630A1

    公开(公告)日：2015-09-17

    申请号：US14482231

    申请日：2014-09-10

    申请人： Kabushiki Kaisha Toshiba

    发明人： Toshiyuki Naka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno ,  Takeshi Uchihara ,  Takaaki Yasumoto ,  Naoko Yanase ,  Shingo Masuko ,  Tasuku Ono

    IPC分类号： H02M3/335

    CPC分类号： H02M3/33507 ,  H02M2001/0048 ,  H02M2001/007 ,  Y02B70/1491

    摘要： In one embodiment, a power supply circuit includes a first circuit including one or more first switching devices, and a first controller configured to control the first switching devices, the first circuit being configured to output a first voltage. The power supply circuit further includes a second circuit including one or more second switching devices which include a normally-on device, and a second controller configured to control the second switching devices, the second circuit being configured to output a second voltage generated from the first voltage. The second controller transmits a first signal for allowing the first circuit to output the first voltage, based on a value of a voltage or a current at a first node in the second circuit. The first controller allows the first circuit to output the first voltage by controlling the first switching devices in accordance with the first signal.

    摘要翻译： 在一个实施例中，电源电路包括包括一个或多个第一开关装置的第一电路和被配置为控制第一开关装置的第一控制器，第一电路被配置为输出第一电压。 电源电路还包括包括一个或多个第二开关装置的第二电路，其包括常开装置，以及被配置为控制第二开关装置的第二控制器，第二电路被配置为输出从第一 电压。 第二控制器基于第二电路中的第一节点处的电压或电流的值，发送用于允许第一电路输出第一电压的第一信号。 第一控制器允许第一电路通过根据第一信号控制第一开关装置来输出第一电压。