公开(公告)号：US20240029797A1

公开(公告)日：2024-01-25

申请号：US18480305

申请日：2023-10-03

Applicant: Kioxia Corporation

Inventor： Hiroyuki TAKENAKA ,  Akihiko CHIBA ,  Teppei HIGASHITSUJI ,  Kiyofumi SAKURAI ,  Hiroaki NAKASA ,  Youichi MAGOME

IPC: G11C16/14 ,  G11C5/06 ,  G11C16/04 ,  G11C16/26 ,  G11C16/16 ,  G11C16/30 ,  G11C16/24

CPC classification number: G11C16/14 ,  G11C5/06 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/16 ,  G11C16/30 ,  G11C16/24

Abstract: A semiconductor storage device includes a first semiconductor substrate, a second semiconductor substrate, a first memory cell and a second memory cell provided between the first semiconductor substrate and the second semiconductor substrate, a first word line electrically connected to the first memory cell, a second word line electrically connected to the second memory cell, a first transistor that is provided on the first semiconductor substrate and electrically connected between the first word line and a first wiring through which a voltage is applied to the first word line, and a second transistor that is provided on the semiconductor substrate and electrically connected between the second word line and a second wiring through which a voltage is applied to the second word line.

公开(公告)号：US20250087274A1

公开(公告)日：2025-03-13

申请号：US18960230

申请日：2024-11-26

Applicant: Kioxia Corporation

Inventor： Hiroyuki TAKENAKA ,  Akihiko CHIBA ,  Teppei HIGASHITSUJI ,  Kiyofumi SAKURAI ,  Hiroaki NAKASA ,  Youichi MAGOME

IPC: G11C16/14 ,  G11C5/06 ,  G11C16/04 ,  G11C16/16 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30

Abstract: A semiconductor storage device includes a first semiconductor substrate, a second semiconductor substrate, a first memory cell and a second memory cell provided between the first semiconductor substrate and the second semiconductor substrate, a first word line electrically connected to the first memory cell, a second word line electrically connected to the second memory cell, a first transistor that is provided on the first semiconductor substrate and electrically connected between the first word line and a first wiring through which a voltage is applied to the first word line, and a second transistor that is provided on the semiconductor substrate and electrically connected between the second word line and a second wiring through which a voltage is applied to the second word line.

公开(公告)号：US20220077128A1

公开(公告)日：2022-03-10

申请号：US17184837

申请日：2021-02-25

Applicant: Kioxia Corporation

Inventor： Akihiko CHIBA ,  Takahiro TSURUDO ,  Kenichi MATOBA ,  Yoshifumi SHIMAMURA ,  Hiroaki NAKASA ,  Hiroyuki TAKENAKA

IPC: H01L25/18 ,  H01L23/00 ,  H01L23/528

Abstract: A semiconductor storage device includes a first semiconductor chip having a first bonding surface; and a second semiconductor chip having a second bonding surface, the second bonding surface being bonded to the first bonding surface. The first semiconductor chip includes a control circuit, a first power line connected to the control circuit and extending in a first direction, and a first pad electrode disposed on the first bonding surface. The second semiconductor chip includes a second power line extending in a second direction, a third power line connected to the second power line and extending in the first direction, a second pad electrode connected to the third power line, and a third pad electrode disposed on the second bonding surface.

公开(公告)号：US20240321865A1

公开(公告)日：2024-09-26

申请号：US18590804

申请日：2024-02-28

Applicant: Kioxia Corporation

Inventor： Syunsuke SASAKI ,  Shouichi OZAKI ,  Kenichi SUGAWARA ,  Hiroaki NAKASA ,  Takeshi MIYABA ,  Maya OHSAKA ,  Shoki ITO

IPC: H01L27/02 ,  H01L27/092 ,  H01L29/06 ,  H10B43/35 ,  H10B43/40

CPC classification number: H01L27/0266 ,  H01L27/0292 ,  H01L27/0925 ,  H01L29/0619 ,  H10B43/35 ,  H10B43/40

Abstract: A semiconductor device includes a first pad to which a high voltage is to be input, a second pad to which a low voltage is to be input, a third pad to which a ground voltage is to be input, and a protection circuit provided between the first pad and the third pad. The protection circuit includes a first protection element group including a plurality of first transistors arranged in a first direction, a second protection element group including a plurality of second transistors arranged in the first direction and disposed apart from the first protection element group in a second direction orthogonal to the first direction, a guard ring provided around the first and second protection element groups, and an intermediate guard ring provided between the first protection element group and the second protection element group and connected to the third pad via a resistance element.

公开(公告)号：US20220246196A1

公开(公告)日：2022-08-04

申请号：US17458067

申请日：2021-08-26

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki TAKENAKA ,  Akihiko CHIBA ,  Teppei HIGASHITSUJI ,  Kiyofumi SAKURAI ,  Hiroaki NAKASA ,  Youichi MAGOME

IPC: G11C11/408 ,  G11C11/4094 ,  G11C11/4074 ,  G11C11/4091 ,  G11C5/06

Abstract: A semiconductor storage device includes a first semiconductor substrate, a second semiconductor substrate, a first memory cell and a second memory cell provided between the first semiconductor substrate and the second semiconductor substrate, a first word line electrically connected to the first memory cell, a second word line electrically connected to the second memory cell, a first transistor that is provided on the first semiconductor substrate and electrically connected between the first word line and a first wiring through which a voltage is applied to the first word line, and a second transistor that is provided on the semiconductor substrate and electrically connected between the second word line and a second wiring through which a voltage is applied to the second word line.