公开(公告)号：US11227646B2

公开(公告)日：2022-01-18

申请号：US17018332

申请日：2020-09-11

Applicant: Kioxia Corporation

Inventor： Masahiro Koike ,  Michael Arnaud Quinsat ,  Nobuyuki Umetsu ,  Tsutomu Nakanishi ,  Yasuaki Ootera ,  Tsuyoshi Kondo

IPC: G11C11/16 ,  G11C5/06 ,  H01L27/22

Abstract: According to one embodiment, a device includes a member including a first portion having a first dimension in first direction, a second portion spaced from the first portion and having a second dimension in the first direction, a third portion between the first and second portions and having a third dimension in the first direction, and a fourth portion between the first and third portions and having a fourth dimension in the first direction; and a circuit to supply a shift pulse including first and second pulses to the member and move a domain wall in the member. The third dimension is less than the first dimension. The second and fourth dimensions are less than the third dimension. A second value of the second pulse is less than a first value of the first pulse.

公开(公告)号：US11915928B2

公开(公告)日：2024-02-27

申请号：US17472470

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Masahiro Koike ,  Masao Shingu ,  Masaya Ichikawa

IPC: H01L21/02 ,  H01L29/26 ,  H10B41/10 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35 ,  H01L21/822 ,  H10B41/27

CPC classification number: H01L21/02532 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/8221 ,  H01L29/263 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: A semiconductor memory device includes a first conductive layer, a semiconductor layer extending in a first direction and being opposed to the first conductive layer, and a gate insulating film disposed between the first conductive layer and the semiconductor layer. The first conductive layer includes a first region, a second region disposed between the first region and the gate insulating film, and a third region disposed between the first region and the first interlayer insulating layer. The first to the third regions contain a metal. The third region contains silicon (Si). The first region does not contain silicon (Si) or has a lower silicon (Si) content than a silicon (Si) content in the third region. The second region does not contain silicon (Si) or has a lower silicon (Si) content than the silicon (Si) content in the third region.

公开(公告)号：US11417831B2

公开(公告)日：2022-08-16

申请号：US16538974

申请日：2019-08-13

Applicant: KIOXIA CORPORATION

Inventor： Nobuyuki Umetsu ,  Tsuyoshi Kondo ,  Masaki Kado ,  Shiho Nakamura ,  Susumu Hashimoto ,  Yasuaki Ootera ,  Michael Arnaud Quinsat ,  Masahiro Koike ,  Tsutomu Nakanishi ,  Megumi Yakabe ,  Agung Setiadi

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08

Abstract: A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.

公开(公告)号：US11232822B2

公开(公告)日：2022-01-25

申请号：US17010455

申请日：2020-09-02

Applicant: KIOXIA CORPORATION

Inventor： Michael Arnaud Quinsat ,  Tsuyoshi Kondo ,  Masahiro Koike ,  Shiho Nakamura ,  Susumu Hashimoto ,  Masaki Kado ,  Nobuyuki Umetsu ,  Yasuaki Ootera ,  Megumi Yakabe ,  Agung Setiadi ,  Shigeyuki Hirayama ,  Yoshihiro Ueda ,  Tsutomu Nakanishi

IPC: G11C11/16

Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.

公开(公告)号：US20210249061A1

公开(公告)日：2021-08-12

申请号：US17010455

申请日：2020-09-02

Applicant: KIOXIA CORPORATION

Inventor： Michael ARNAUD QUINSAT ,  Tsuyoshi Kondo ,  Masahiro Koike ,  Shiho Nakamura ,  Susumu Hashimoto ,  Masaki Kado ,  Nobuyuki Umetsu ,  Yasuaki Ootera ,  Megumi Yakabe ,  Agung Setiadi ,  Shigeyuki Hirayama ,  Yoshihiro Ueda ,  Tsutomu Nakanishi

IPC: G11C11/16

Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.

公开(公告)号：US20210295889A1

公开(公告)日：2021-09-23

申请号：US17018332

申请日：2020-09-11

Applicant: Kioxia Corporation

Inventor： Masahiro Koike ,  Michael Arnaud Quinsat ,  Nobuyuki Umetsu ,  Tsutomu Nakanishi ,  Yasuaki Ootera ,  Tsuyoshi Kondo

IPC: G11C11/16 ,  H01L27/22 ,  G11C5/06

Abstract: According to one embodiment, a device includes a member including a first portion having a first dimension in first direction, a second portion spaced from the first portion and having a second dimension in the first direction, a third portion between the first and second portions and having a third dimension in the first direction, and a fourth portion between the first and third portions and having a fourth dimension in the first direction; and a circuit to supply a shift pulse including first and second pulses to the member and move a domain wall in the member. The third dimension is less than the first dimension. The second and fourth dimensions are less than the third dimension. A second value of the second pulse is less than a first value of the first pulse.

公开(公告)号：US11610617B2

公开(公告)日：2023-03-21

申请号：US17349350

申请日：2021-06-16

Applicant: Kioxia Corporation

Inventor： Naoharu Shimomura ,  Michael Arnaud Quinsat ,  Masahiro Koike

IPC: G11C11/16 ,  H01L27/22 ,  G11C11/18 ,  H01L43/06 ,  H01L43/02

Abstract: A magnetic memory according to an embodiment includes: a first wiring and a second wiring; a first magnetic member having a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, the first magnetic member extending in a first direction from the first portion to the second portion; a third wiring that is electrically insulated from the first magnetic member; and a control circuit electrically connected to the first wiring, the second wiring, and the third wiring, the control circuit supplying a current pulse, in which a trailing time is longer than a rising time, to the third wiring.