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公开(公告)号:US12052875B2
公开(公告)日:2024-07-30
申请号:US17410806
申请日:2021-08-24
Applicant: KIOXIA CORPORATION
Inventor: Yoshihiro Ueda , Naoharu Shimomura , Tsuyoshi Kondo
CPC classification number: H10B61/22 , G11C11/161 , G11C11/1673 , G11C11/1675 , H10N50/10 , H10N50/80
Abstract: A magnetic memory includes a planar electrode and a first wiring spaced from the electrode. A first magnetic member is between the electrode and the first wiring. The first magnetic member has a first end facing the first wiring and a second end facing the electrode. A magnetoresistive element is connected to the first end. A transistor is between the magnetoresistive element and the first wiring. The transistor has a channel layer and a gate electrode covering at least part of an outer periphery of the channel layer. One end of the channel layer is connected to the magnetoresistive element, and another end of the channel layer is connected to the first wiring. A second wiring has a portion between the electrode and the second end of the first magnetic member. A control circuit is electrically connected to the gate electrode, the electrode, and the first and second wirings.
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公开(公告)号:US11871586B2
公开(公告)日:2024-01-09
申请号:US17693818
申请日:2022-03-14
Applicant: Kioxia Corporation
Inventor: Naoharu Shimomura , Nobuyuki Umetsu , Tsuyoshi Kondo , Yoshihiro Ueda , Yasuaki Ootera , Akihito Yamamoto , Mutsumi Okajima , Masaki Kado , Tsutomo Nakanishi , Michael Arnaud Quinsat
CPC classification number: H10B61/22 , G11C11/161 , G11C11/1675 , H10N50/80 , G11C19/08
Abstract: A magnetic memory of the present embodiment includes an electrode extending along a plane including a first direction and a second direction, a first wiring extending in the first direction, second wirings between the electrode and the first wiring, extending in the second direction and arranged in the first direction, first magnetic members each including a first part electrically connected to the first wiring and a second part electrically connected to the electrode, extending in a third direction, and being positioned between neighboring two of the second wirings when seen from the third direction, and a control circuit. When writing first information to one first magnetic member, the control circuit supplies first current to at least two second wirings positioned on one side of the one first magnetic member in the first direction.
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公开(公告)号:US11676677B2
公开(公告)日:2023-06-13
申请号:US17377247
申请日:2021-07-15
Applicant: KIOXIA CORPORATION
Inventor: Yoshihiro Ueda , Shinji Miyano
CPC classification number: G11C19/0841 , G11C19/0833 , G11C11/161
Abstract: A magnetic storage device includes a magnetic body including first and second magnetic regions and a magnetic connection region that connects the first and second magnetic regions, and in which a plurality of magnetic domains each storing information by a magnetization direction thereof is formed, a read element that is electrically connected to the magnetic connection region and by which a magnetization direction of one of the magnetic domains is read, and a write element by which a magnetic domain having a magnetization direction is formed in the magnetic body according to information to be stored. The magnetic domains formed in each of the first and second magnetic regions are shifted in a predetermined direction in response to current that flows through the corresponding one of the first and second magnetic regions.
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公开(公告)号:US11237763B2
公开(公告)日:2022-02-01
申请号:US16816439
申请日:2020-03-12
Applicant: Kioxia Corporation
Inventor: Yoshihiro Ueda , Naomi Takeda , Masanobu Shirakawa , Marie Takada
Abstract: According to one embodiment, a storage device includes a nonvolatile memory and a control circuit. The nonvolatile memory includes a plurality of storage blocks, each including a shift register. The control circuit controls writing and reading of data to and from the nonvolatile memory. The control circuit is configured to: read target data from a first storage block of the plurality of storage blocks; and write the target data read from the first storage block to a second storage block of the plurality of storage blocks, the second storage block being different from the first storage block.
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公开(公告)号:US11120858B2
公开(公告)日:2021-09-14
申请号:US16914511
申请日:2020-06-29
Applicant: Kioxia Corporation
Inventor: Yoshihiro Ueda , Michael Arnaud Quinsat
Abstract: A magnetic memory according to an embodiment includes: a first wiring; a second wiring; a first switching element disposed between the first wiring and the second wiring; a first magnetic member extending in a first direction and disposed between the first switching element and the second wiring; a third wiring disposed between the first magnetic member and the second wiring; a first magnetoresistive element disposed between the third wiring and the second wiring; and a second switching element disposed between the first magnetoresistive element and the second wiring.
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公开(公告)号:US11232822B2
公开(公告)日:2022-01-25
申请号:US17010455
申请日:2020-09-02
Applicant: KIOXIA CORPORATION
Inventor: Michael Arnaud Quinsat , Tsuyoshi Kondo , Masahiro Koike , Shiho Nakamura , Susumu Hashimoto , Masaki Kado , Nobuyuki Umetsu , Yasuaki Ootera , Megumi Yakabe , Agung Setiadi , Shigeyuki Hirayama , Yoshihiro Ueda , Tsutomu Nakanishi
IPC: G11C11/16
Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.
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公开(公告)号:US20210249061A1
公开(公告)日:2021-08-12
申请号:US17010455
申请日:2020-09-02
Applicant: KIOXIA CORPORATION
Inventor: Michael ARNAUD QUINSAT , Tsuyoshi Kondo , Masahiro Koike , Shiho Nakamura , Susumu Hashimoto , Masaki Kado , Nobuyuki Umetsu , Yasuaki Ootera , Megumi Yakabe , Agung Setiadi , Shigeyuki Hirayama , Yoshihiro Ueda , Tsutomu Nakanishi
IPC: G11C11/16
Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.
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公开(公告)号:US11711925B2
公开(公告)日:2023-07-25
申请号:US17189107
申请日:2021-03-01
Applicant: Kioxia Corporation
Inventor: Hiroki Tokuhira , Tsuyoshi Kondo , Mutsumi Okajima , Yoshihiro Ueda
CPC classification number: H10B61/00 , G11C19/0808 , H10N50/01 , H10N50/80
Abstract: A magnetic memory of an embodiment includes: a first magnetic member including a first and second portions and extending in a first direction; a first and second wirings disposed to be apart from the first magnetic member and extending in a second direction intersecting the first direction, the first and the second wirings being separated from each other in a third direction intersecting the first and second directions, the first magnetic member being disposed to be apart from a region between the first wiring and the second wiring in the first direction; and a second magnetic member surrounding at least parts of the first and second wirings, the second magnetic member including a third portion located to be more distant from the first magnetic member, a fourth portion located to be closer to the first magnetic member, and a fifth portion located in the region.
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