Magnetic memory
    1.
    发明授权

    公开(公告)号:US12052875B2

    公开(公告)日:2024-07-30

    申请号:US17410806

    申请日:2021-08-24

    Abstract: A magnetic memory includes a planar electrode and a first wiring spaced from the electrode. A first magnetic member is between the electrode and the first wiring. The first magnetic member has a first end facing the first wiring and a second end facing the electrode. A magnetoresistive element is connected to the first end. A transistor is between the magnetoresistive element and the first wiring. The transistor has a channel layer and a gate electrode covering at least part of an outer periphery of the channel layer. One end of the channel layer is connected to the magnetoresistive element, and another end of the channel layer is connected to the first wiring. A second wiring has a portion between the electrode and the second end of the first magnetic member. A control circuit is electrically connected to the gate electrode, the electrode, and the first and second wirings.

    Magnetic storage device
    3.
    发明授权

    公开(公告)号:US11676677B2

    公开(公告)日:2023-06-13

    申请号:US17377247

    申请日:2021-07-15

    CPC classification number: G11C19/0841 G11C19/0833 G11C11/161

    Abstract: A magnetic storage device includes a magnetic body including first and second magnetic regions and a magnetic connection region that connects the first and second magnetic regions, and in which a plurality of magnetic domains each storing information by a magnetization direction thereof is formed, a read element that is electrically connected to the magnetic connection region and by which a magnetization direction of one of the magnetic domains is read, and a write element by which a magnetic domain having a magnetization direction is formed in the magnetic body according to information to be stored. The magnetic domains formed in each of the first and second magnetic regions are shifted in a predetermined direction in response to current that flows through the corresponding one of the first and second magnetic regions.

    Storage device and memory controller

    公开(公告)号:US11237763B2

    公开(公告)日:2022-02-01

    申请号:US16816439

    申请日:2020-03-12

    Abstract: According to one embodiment, a storage device includes a nonvolatile memory and a control circuit. The nonvolatile memory includes a plurality of storage blocks, each including a shift register. The control circuit controls writing and reading of data to and from the nonvolatile memory. The control circuit is configured to: read target data from a first storage block of the plurality of storage blocks; and write the target data read from the first storage block to a second storage block of the plurality of storage blocks, the second storage block being different from the first storage block.

    Magnetic memory
    5.
    发明授权

    公开(公告)号:US11120858B2

    公开(公告)日:2021-09-14

    申请号:US16914511

    申请日:2020-06-29

    Abstract: A magnetic memory according to an embodiment includes: a first wiring; a second wiring; a first switching element disposed between the first wiring and the second wiring; a first magnetic member extending in a first direction and disposed between the first switching element and the second wiring; a third wiring disposed between the first magnetic member and the second wiring; a first magnetoresistive element disposed between the third wiring and the second wiring; and a second switching element disposed between the first magnetoresistive element and the second wiring.

    Magnetic memory
    8.
    发明授权

    公开(公告)号:US11711925B2

    公开(公告)日:2023-07-25

    申请号:US17189107

    申请日:2021-03-01

    CPC classification number: H10B61/00 G11C19/0808 H10N50/01 H10N50/80

    Abstract: A magnetic memory of an embodiment includes: a first magnetic member including a first and second portions and extending in a first direction; a first and second wirings disposed to be apart from the first magnetic member and extending in a second direction intersecting the first direction, the first and the second wirings being separated from each other in a third direction intersecting the first and second directions, the first magnetic member being disposed to be apart from a region between the first wiring and the second wiring in the first direction; and a second magnetic member surrounding at least parts of the first and second wirings, the second magnetic member including a third portion located to be more distant from the first magnetic member, a fourth portion located to be closer to the first magnetic member, and a fifth portion located in the region.

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