Magnetic memory
    1.
    发明授权

    公开(公告)号:US12178138B2

    公开(公告)日:2024-12-24

    申请号:US17447360

    申请日:2021-09-10

    Abstract: A magnetic memory includes: a first and second wirings; an insulator portion; a magnetic member including: a first portion electrically connected to the first wiring; a second portion electrically connected to the second wiring; and a third portion disposed between the first and second portions, the magnetic member extending in a first direction from the first portion toward the second portion and surrounding the insulator portion, and in a cross-section parallel to the first direction and including part of the magnetic member and part of the insulator portion, a curvature of the first portion being smaller than a curvature of the third portion, a length of the first portion in the first direction being greater than half a length of the third portion in the first direction; and a control circuit electrically connected to the first and second wirings.

    Magnetic memory
    5.
    发明授权

    公开(公告)号:US11227646B2

    公开(公告)日:2022-01-18

    申请号:US17018332

    申请日:2020-09-11

    Abstract: According to one embodiment, a device includes a member including a first portion having a first dimension in first direction, a second portion spaced from the first portion and having a second dimension in the first direction, a third portion between the first and second portions and having a third dimension in the first direction, and a fourth portion between the first and third portions and having a fourth dimension in the first direction; and a circuit to supply a shift pulse including first and second pulses to the member and move a domain wall in the member. The third dimension is less than the first dimension. The second and fourth dimensions are less than the third dimension. A second value of the second pulse is less than a first value of the first pulse.

    Magnetic memory
    6.
    发明授权

    公开(公告)号:US12069962B2

    公开(公告)日:2024-08-20

    申请号:US17196737

    申请日:2021-03-09

    CPC classification number: H10N50/80 H10B61/22 H10N50/01

    Abstract: A magnetic memory according to an embodiment includes: a first wiring and a second wiring; a nonmagnetic conductor extending in a first direction; a first magnetic member including a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, the first magnetic member extending in the first direction from the first portion to the second portion to surround the nonmagnetic conductor; an insulation portion disposed between the nonmagnetic conductor and the first magnetic member; and a controller electrically connected to the nonmagnetic conductor, the first wiring, and the second wiring.

    MAGNETIC MEMORY
    10.
    发明申请

    公开(公告)号:US20210295889A1

    公开(公告)日:2021-09-23

    申请号:US17018332

    申请日:2020-09-11

    Abstract: According to one embodiment, a device includes a member including a first portion having a first dimension in first direction, a second portion spaced from the first portion and having a second dimension in the first direction, a third portion between the first and second portions and having a third dimension in the first direction, and a fourth portion between the first and third portions and having a fourth dimension in the first direction; and a circuit to supply a shift pulse including first and second pulses to the member and move a domain wall in the member. The third dimension is less than the first dimension. The second and fourth dimensions are less than the third dimension. A second value of the second pulse is less than a first value of the first pulse.

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