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公开(公告)号:US11699486B2
公开(公告)日:2023-07-11
申请号:US17738069
申请日:2022-05-06
Applicant: KIOXIA CORPORATION
Inventor: Tomonori Takahashi , Masanobu Shirakawa , Osamu Torii , Marie Takada
CPC classification number: G11C11/5671 , G11C16/0483 , G11C16/08 , G11C16/26
Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.
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公开(公告)号:US11418219B2
公开(公告)日:2022-08-16
申请号:US17005270
申请日:2020-08-27
Applicant: KIOXIA CORPORATION
Inventor: Ryota Yoshizawa , Kenichiro Furuta , Yuma Yoshinaga , Osamu Torii , Tomoya Kodama
Abstract: According to one embodiment, a learning device includes a noise generation unit, a decoding unit, a generation unit, and a learning unit. The noise generation unit outputs a second code word which corresponds to a first code word to which noise has been added. The decoding unit decodes the second code word and outputs a third code word. The generation unit generates learning data for learning a weight in message passing decoding in which the weight and a message to be transmitted are multiplied, based on whether or not decoding of the second code word into the third code word has been successful. The learning unit determines a value for the weight in the message passing decoding by using the learning data.
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公开(公告)号:US12034459B2
公开(公告)日:2024-07-09
申请号:US18312834
申请日:2023-05-05
Applicant: KIOXIA CORPORATION
Inventor: Riki Suzuki , Toshikatsu Hida , Osamu Torii , Hiroshi Yao , Kiyotaka Iwasaki
CPC classification number: H03M13/35 , G06F3/0619 , G06F3/064 , G06F3/0653 , G06F3/0679 , G06F11/1008 , G06F11/1044 , G06F11/1048 , G06F11/1068 , G06F11/1076 , G11C29/52 , H03M13/29 , H03M13/2906 , H03M13/2957 , G11B20/1833 , G11C7/1006 , G11C2029/0411
Abstract: According to one embodiment, a nonvolatile memory includes a plurality of memory areas and controller circuit including an error correction code encoder. The error correction code encoder encodes a first data to generate a first parity in a first operation and encodes a second data to generate a second parity in a second operation. The controller circuit writes the first data and the first parity into a first memory area among the plurality of memory areas and writes the second data and the second parity into a second memory area among the plurality of memory areas. The size of the second data is smaller than the size of the first data and the size of the second parity is equal to the size of the first parity.
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公开(公告)号:US11683053B2
公开(公告)日:2023-06-20
申请号:US17178604
申请日:2021-02-18
Applicant: KIOXIA CORPORATION
Inventor: Riki Suzuki , Toshikatsu Hida , Osamu Torii , Hiroshi Yao , Kiyotaka Iwasaki
IPC: H03M13/00 , H03M13/35 , G06F11/10 , H03M13/29 , G06F3/06 , G11C29/52 , G11C7/10 , G11B20/18 , G11C29/04
CPC classification number: H03M13/35 , G06F3/064 , G06F3/0619 , G06F3/0653 , G06F3/0679 , G06F11/1008 , G06F11/1044 , G06F11/1048 , G06F11/1068 , G06F11/1076 , G11C29/52 , H03M13/29 , H03M13/2906 , H03M13/2957 , G11B20/1833 , G11C7/1006 , G11C2029/0411
Abstract: According to one embodiment, a nonvolatile memory includes a plurality of memory areas and controller circuit including an error correction code encoder. The error correction code encoder encodes a first data to generate a first parity in a first operation and encodes a second data to generate a second parity in a second operation. The controller circuit writes the first data and the first parity into a first memory area among the plurality of memory areas and writes the second data and the second parity into a second memory area among the plurality of memory areas. The size of the second data is smaller than the size of the first data and the size of the second parity is equal to the size of the first parity.
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公开(公告)号:US11347584B2
公开(公告)日:2022-05-31
申请号:US16807220
申请日:2020-03-03
Applicant: Kioxia Corporation
Inventor: Masanobu Shirakawa , Hideki Yamada , Marie Takada , Ryo Yamaki , Osamu Torii , Naomi Takeda
Abstract: A memory system controls a shift register memory and writes encoded data including a plurality of error correction code frames into a block of the shift register memory. The memory system is configured to store, into a location corresponding to a first layer in a first data storing shift string, first data included in a first error correction code frame, to store, into a location corresponding to a second layer in the first data storing shift string, second data included in a second error correction code frame, and to store, into a location corresponding to the second layer in a second data storing shift string, third data included in the first error correction code frame.
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公开(公告)号:US12027203B2
公开(公告)日:2024-07-02
申请号:US18321338
申请日:2023-05-22
Applicant: KIOXIA CORPORATION
Inventor: Tomonori Takahashi , Masanobu Shirakawa , Osamu Torii , Marie Takada
CPC classification number: G11C11/5671 , G11C16/0483 , G11C16/08 , G11C16/26
Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.
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公开(公告)号:US11567830B2
公开(公告)日:2023-01-31
申请号:US17184166
申请日:2021-02-24
Applicant: Kioxia Corporation
Inventor: Yuma Yoshinaga , Tomoya Kodama , Osamu Torii , Kenichiro Furuta , Ryota Yoshizawa
Abstract: A memory system includes a non-volatile memory and a memory controller. The memory controller is configured to read a received word from the non-volatile memory, estimate noise by using a plurality of different models for estimating the noise included in the received word to obtain a plurality of noise estimation values, select one noise estimation value from the plurality of noise estimation values, update the received word by using a value obtained by subtracting the selected noise estimation value from the read received word, and decode the updated received word by using a belief-propagation method.
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公开(公告)号:US11361820B2
公开(公告)日:2022-06-14
申请号:US17143530
申请日:2021-01-07
Applicant: KIOXIA CORPORATION
Inventor: Tomonori Takahashi , Masanobu Shirakawa , Osamu Torii , Marie Takada
Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.
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公开(公告)号:US20250077572A1
公开(公告)日:2025-03-06
申请号:US18820977
申请日:2024-08-30
Applicant: Kioxia Corporation
Inventor: Yuchieh Lin , Yuji Nozawa , youyang NG , Takeshi Fujiwara , Osamu Torii
IPC: G06F16/583 , G06F16/538 , G06V10/44 , G06V10/74 , G06V10/82
Abstract: An information processing apparatus includes a first neural network that extracts a feature of a query image and features of search object images; a processing circuitry detects a degree of similarity between the search object images and a query image based on the feature of the query image and the features of the search object images, and calculates a score of each of the search object images based on the degree of similarity between each of the search object images and the query image and feature transformation information relating to the degree of similarity between each of the search object images and the query image; a second neural network that outputs the feature transformation information; and a user interface that determines by a user the feature transformation information of each of the search object images based on the degree of similarity or the scores of the search object images.
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