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公开(公告)号：US11917930B2
公开(公告)日：2024-02-27
申请号：US17462819
申请日：2021-08-31
申请人： Kioxia Corporation
发明人： Takao Kosaka , Hiroki Tokuhira
CPC分类号： H10N70/8828 , H10B63/24 , H10B63/84 , H10N70/235 , H10N70/841 , H10N70/8822 , H10N70/8825 , G11C2013/008
摘要： A resistance change device of an embodiment includes: a first electrode; a second electrode; and a stack disposed between these electrodes, and including a first layer containing a resistance change material and a second layer in contact with the first layer. The resistance change material contains at least one of a first element such as Ge and a second element such as Sb, and at least one third element selected from Te, Se, S, and O. The second layer contains a crystal material containing at least one selected from a group consisting of a first material having a composition represented by (Ti,Zr,Hf)CoSb, (Zr,Hf)NiSn, or Fe(Nb,Zr,Hf)(Sb,Sn), a second material having a composition represented by Fe(V,Hf,W)(Al,Si), and a third material having a composition represented by Mg(Si,Ge,Sn).
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公开(公告)号：US12127391B2
公开(公告)日：2024-10-22
申请号：US18458054
申请日：2023-08-29
申请人： Kioxia Corporation
IPC分类号： G11C11/24 , G11C11/406 , G11C11/4076 , G11C11/4096 , H01L21/02 , H01L29/66 , H01L29/786 , H10B12/00
CPC分类号： H10B12/30 , G11C11/40615 , G11C11/4076 , G11C11/4096 , H01L21/02565 , H01L29/66969 , H01L29/7869 , H10B12/03 , H10B12/05
摘要： A semiconductor memory device includes: a first wiring; a first semiconductor layer connected to the first wiring, the first semiconductor layer; a first electrode, the first electrode being connected to the first semiconductor layer; a second electrode disposed between the first electrode and the first wiring, the second electrode being opposed to the first semiconductor layer; a third electrode disposed between the second electrode and the first wiring, the third electrode; a second semiconductor layer disposed between the third electrode and the first semiconductor layer, the second semiconductor layer being opposed to the third electrode; and an electric charge accumulating layer electrically connected to the first wiring via the second semiconductor layer, the electric charge accumulating layer being opposed to the first semiconductor layer.
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公开(公告)号：US11751399B2
公开(公告)日：2023-09-05
申请号：US17716450
申请日：2022-04-08
申请人： KIOXIA CORPORATION
CPC分类号： H10B43/35 , H01L29/40117 , H10B43/27
摘要： A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.
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公开(公告)号：US12108602B2
公开(公告)日：2024-10-01
申请号：US18359112
申请日：2023-07-26
申请人： KIOXIA CORPORATION
CPC分类号： H10B43/35 , H01L29/40117 , H10B43/27
摘要： A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.
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公开(公告)号：US20240098977A1
公开(公告)日：2024-03-21
申请号：US18467887
申请日：2023-09-15
申请人： Kioxia Corporation
发明人： Takashi Inukai , Hiroki Tokuhira , Tsuneo Inaba
IPC分类号： H10B12/00
CPC分类号： H10B12/33 , H10B12/482 , H10B12/488
摘要： According to one embodiment, a semiconductor device includes a first wiring line provided in a first layer and extending in a first direction, a second wiring line provided in a second layer and extending in the first direction, a first semiconductor layer penetrating the first wiring line without penetrating the second wiring line and extending in a second direction, a second semiconductor layer penetrating the second wiring line without penetrating the first wiring line and extending in the second direction, a first insulating layer provided between the first wiring line and the first semiconductor layer, a second insulating layer provided between the second wiring line and the second semiconductor layer.
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公开(公告)号：US11600772B2
公开(公告)日：2023-03-07
申请号：US17014587
申请日：2020-09-08
申请人： Kioxia Corporation
发明人： Hiroki Kawai , Katsuyoshi Komatsu , Tadaomi Daibou , Hiroki Tokuhira , Masatoshi Yoshikawa , Yuichi Ito
IPC分类号： H01L45/00
摘要： A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0
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公开(公告)号：US11778808B2
公开(公告)日：2023-10-03
申请号：US17472902
申请日：2021-09-13
申请人： Kioxia Corporation
IPC分类号： G11C11/24 , H10B12/00 , H01L29/786 , G11C11/4076 , H01L29/66 , G11C11/406 , G11C11/4096 , H01L21/02
CPC分类号： H10B12/30 , G11C11/4076 , G11C11/4096 , G11C11/40615 , H01L21/02565 , H01L29/66969 , H01L29/7869 , H10B12/03 , H10B12/05
摘要： A semiconductor memory device includes: a first wiring; a first semiconductor layer connected to the first wiring, the first semiconductor layer; a first electrode, the first electrode being connected to the first semiconductor layer; a second electrode disposed between the first electrode and the first wiring, the second electrode being opposed to the first semiconductor layer; a third electrode disposed between the second electrode and the first wiring, the third electrode; a second semiconductor layer disposed between the third electrode and the first semiconductor layer, the second semiconductor layer being opposed to the third electrode; and an electric charge accumulating layer electrically connected to the first wiring via the second semiconductor layer, the electric charge accumulating layer being opposed to the first semiconductor layer.
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公开(公告)号：US11711925B2
公开(公告)日：2023-07-25
申请号：US17189107
申请日：2021-03-01
申请人： Kioxia Corporation
CPC分类号： H10B61/00 , G11C19/0808 , H10N50/01 , H10N50/80
摘要： A magnetic memory of an embodiment includes: a first magnetic member including a first and second portions and extending in a first direction; a first and second wirings disposed to be apart from the first magnetic member and extending in a second direction intersecting the first direction, the first and the second wirings being separated from each other in a third direction intersecting the first and second directions, the first magnetic member being disposed to be apart from a region between the first wiring and the second wiring in the first direction; and a second magnetic member surrounding at least parts of the first and second wirings, the second magnetic member including a third portion located to be more distant from the first magnetic member, a fourth portion located to be closer to the first magnetic member, and a fifth portion located in the region.
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公开(公告)号：US11600773B2
公开(公告)日：2023-03-07
申请号：US17184871
申请日：2021-02-25
申请人： Kioxia Corporation
摘要： A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains SixTeyNz. The x, y, and z of the SixTeyNz satisfy 0
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公开(公告)号：US11329060B2
公开(公告)日：2022-05-10
申请号：US17028308
申请日：2020-09-22
申请人： KIOXIA CORPORATION
IPC分类号： H01L27/1157 , H01L27/11582 , H01L21/28
摘要： A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.
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