公开(公告)号：US20150048395A1

公开(公告)日：2015-02-19

申请号：US14388877

申请日：2013-03-30

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Kenneth Vampola ,  Han Ho Choi ,  Mark Melvin Butterworth

IPC: H01L33/46 ,  H01L33/58 ,  H01L25/075 ,  H01L33/50

CPC classification number: H01L33/465 ,  G02F1/133603 ,  G02F2001/133614 ,  H01L25/0753 ,  H01L33/504 ,  H01L33/507 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention include a semiconductor light emitting diode attached to a substrate. A first region of wavelength converting material is disposed on the substrate. The wavelength converting material is configured to absorb light emitted by the semiconductor light emitting diode and emit light at a different wavelength. In the first region, the wavelength converting material coats an entire surface of the substrate. The substrate is disposed proximate a bottom surface of an optical cavity. A second region of wavelength converting material is disposed proximate a top surface of the optical cavity.

Abstract translation: 本发明的实施例包括附接到基板的半导体发光二极管。 波长转换材料的第一区域设置在基板上。 波长转换材料被配置为吸收由半导体发光二极管发射的光并发射不同波长的光。 在第一区域中，波长转换材料涂覆基板的整个表面。 衬底靠近光腔的底表面设置。 波长转换材料的第二区域设置在光腔的顶表面附近。

公开(公告)号：US20150060917A1

公开(公告)日：2015-03-05

申请号：US14388979

申请日：2013-03-26

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Kenneth Vampola ,  Han Ho Choi

IPC: H01L33/50

CPC classification number: H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2933/0041

Abstract: Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.

Abstract translation: 本发明的实施例包括半导体发光器件，设置在半导体发光器件的顶表面上的第一波长转换部件和设置在半导体发光器件的侧表面上的第二波长转换部件。 第一和第二波长转换构件包括不同的波长转换材料。

公开(公告)号：US20170301832A1

公开(公告)日：2017-10-19

申请号：US15102986

申请日：2014-12-30

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Grigoriy Basin ,  Paul Martin ,  Han Ho Choi

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/00

CPC classification number: H01L33/505 ,  H01L33/0095 ,  H01L33/58 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/0058

Abstract: A multi-stage lamination process is used to laminate a wavelength conversion film (220) to a transparent substrate (230), and subsequently to a light emitting element (110). The wavelength conversion film (220) may be an uncured phosphor-embedded silicone polymer, and the lamination process includes heating the polymer so that it adheres to the transparent substrate (230), but is not fully cured. The phosphor-laminated transparent substrate (230) is sliced/diced and the wavelength conversion film (220) of each diced substrate is placed upon each light emitting element (110). The semi-cured wavelength conversion film (220) is then laminated to the light emitting element (110) via heating, consequently curing the phosphor film. Throughout the process, no glue is used, and the optical losses associated with glue material are not introduced.

公开(公告)号：US09806238B2

公开(公告)日：2017-10-31

申请号：US14388979

申请日：2013-03-26

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Kenneth Vampola ,  Han Ho Choi

IPC: H01L33/00 ,  H01L33/50

Abstract: Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.

公开(公告)号：US20160163931A1

公开(公告)日：2016-06-09

申请号：US14903727

申请日：2014-07-03

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： April Dawn Schricker ,  Oleg Borisovich Shchekin ,  Han Ho Choi ,  Peter Josef Schmidt

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/60

CPC classification number: H01L33/504 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/501 ,  H01L33/505 ,  H01L33/60 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00

Abstract: In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

Abstract translation: 在本发明的实施例中，发光器件包括包括设置在n型区域和p型区域之间的发光层的半导体结构。 第一波长转换层设置在由发光层发射的光的路径中。 第一波长转换层可以是波长转换陶瓷。 第二波长转换层与第一波长转换层融合。 第二波长转换层可以是布置在玻璃中的波长转换材料。

公开(公告)号：US20170352788A1

公开(公告)日：2017-12-07

申请号：US15684477

申请日：2017-08-23

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Kenneth Vampola ,  Han Ho Choi

IPC: H01L33/50

CPC classification number: H01L33/504 ,  H01L33/505 ,  H01L33/508 ,  H01L33/56 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2933/0041

Abstract: Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.

公开(公告)号：US09761768B2

公开(公告)日：2017-09-12

申请号：US14903727

申请日：2014-07-03

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： April Dawn Schricker ,  Oleg Borisovich Shchekin ,  Han Ho Choi ,  Peter Josef Schmidt

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/60 ,  H01L25/075

CPC classification number: H01L33/504 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/501 ,  H01L33/505 ,  H01L33/60 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00

Abstract: In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.