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    Magnetic head and magnetic head assembly having a spin torque oscillator
    1.
    发明授权
    Magnetic head and magnetic head assembly having a spin torque oscillator 有权
    具有自旋扭矩振荡器的磁头和磁头组件

    公开(公告)号：US08970986B2

    公开(公告)日：2015-03-03

    申请号：US13915529

    申请日：2013-06-11

    申请人： Kabushiki Kaisha Toshiba

    发明人： Masahiro Takashita ,  Shuichi Murakami ,  Naoki Hase ,  Katsuhiko Koui

    IPC分类号： G11B5/127 ,  G11B5/187 ,  G11B5/147

    CPC分类号： G11B5/147 ,  G11B5/235 ,  G11B5/3136 ,  G11B5/3146 ,  G11B2005/0024

    摘要： A magnetic head includes a main magnetic pole, a trailing shield that forms a magnetic circuit with the main magnetic pole, a spin torque oscillator that is provided between the main magnetic pole and the trailing shield, a first cooling layer that partially has a Heusler structure, and a second cooling layer that is provided on the first cooling layer and mainly comprised of silver. The first cooling layer and the second cooling layer are provided either between the main magnetic pole and spin torque oscillator or between the trailing shield and the spin torque oscillator, with either of the two cooling layers being disposed closer to the spin torque oscillator. A third cooling layer may be formed to be in contact with the first cooling layer.

    摘要翻译： 磁头包括主磁极，与主磁极形成磁路的后屏蔽，设置在主磁极和后屏蔽之间的自旋扭矩振荡器，部分具有赫斯勒结构的第一冷却层 ，以及设置在第一冷却层上并主要由银构成的第二冷却层。 第一冷却层和第二冷却层设置在主磁极和自旋扭矩振荡器之间，或者设置在后挡板和自旋扭矩振荡器之间，两个冷却层中的任一个设置得更靠近自旋扭矩振荡器。 第三冷却层可以形成为与第一冷却层接触。

    Magnetoresistive element with aluminum or iron concentration ratio changed in film-thickness direction
    2.
    发明授权
    Magnetoresistive element with aluminum or iron concentration ratio changed in film-thickness direction 有权
    具有铝或铁浓度比的磁阻元件在膜厚度方向上变化

    公开(公告)号：US08953286B2

    公开(公告)日：2015-02-10

    申请号：US14193172

    申请日：2014-02-28

    申请人： Kabushiki Kaisha Toshiba

    发明人： Naoki Hase ,  Masayuki Takagishi ,  Susumu Hashimoto ,  Shuichi Murakami ,  Yousuke Isowaki ,  Masaki Kado ,  Hitoshi Iwasaki

    IPC分类号： G11B5/39 ,  G11B5/31

    CPC分类号： G01R33/093 ,  G11B5/3906 ,  G11B5/3912 ,  G11B5/398 ,  H01F10/1936 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/02 ,  H01L43/08 ,  Y10T428/1121

    摘要： A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first and second magnetic films; and an intermediate film disposed between the first and second magnetic films, at least one of the first and second magnetic films being formed of a Heusler alloy expressed as Co100-x(AyB1.0-y)x (40 at %≦x≦60 at %, 0.3≦y≦0.7) where A is an alloy containing at least Fe and Mn, and B is an alloy containing at least Si, Al, and Ge, a composition of the at least one of the first and second magnetic films being changed in a film-thickness direction so that a ratio of Fe/(Fe+Mn) is less than 60% in a first region disposed near an interface with the intermediate film in the film-thickness direction, and is 60% or more in a second region that is disposed at more distance from the interface than the first region in the film-thickness direction.

    摘要翻译： 根据实施例的磁阻元件包括：磁阻效应膜，包括：第一和第二磁性膜; 以及设置在所述第一和第二磁性膜之间的中间膜，所述第一和第二磁性膜中的至少一个由表示为Co100-x（AyB1.0-y）x（40at％＆nlE; x＆amp; 60at％，0.3＆nlE; y＆nlE; 0.7）其中A是至少含有Fe和Mn的合金，B是至少含有Si，Al和Ge的合金，第一和第二 磁性膜在膜厚度方向上变化，使得在设置在与中间膜在膜厚度方向上的界面附近的第一区域中Fe /（Fe + Mn）的比率小于60％，并且为60％ 或更多的第二区域，其设置在比膜厚度方向上比第一区域更接近界面的位置。

    Magnetoresistive effect element with an oscillation layer
    7.
    发明授权
    Magnetoresistive effect element with an oscillation layer 有权
    具有振荡层的磁阻效应元件

    公开(公告)号：US09112140B2

    公开(公告)日：2015-08-18

    申请号：US14157879

    申请日：2014-01-17

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Naoki Hase ,  Masayuki Takagishi ,  Hitoshi Iwasaki

    IPC分类号： G11B5/39 ,  H01L43/08 ,  G01R33/09 ,  G11B5/00

    CPC分类号： H01L43/08 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3932 ,  G11B2005/0024

    摘要： According to one embodiment, a magnetoresistive effect element includes: a nonmagnetic layer; a stacked structure body; and a detection layer. The stacked structure body is provided on the nonmagnetic layer. The stacked structure body includes: a reference layer; an oscillation layer; and an intermediate layer. The reference layer is provided on the nonmagnetic layer. A magnetization of the reference layer is fixed. The oscillation layer is provided on the reference layer. A magnetization of the oscillation layer is substantially parallel to the magnetization of the reference layer and is variable. The intermediate layer is provided between the reference layer and the oscillation layer. The detection layer is provided on the nonmagnetic layer apart from the stacked structure body.

    摘要翻译： 根据一个实施例，磁阻效应元件包括：非磁性层; 堆叠结构体; 和一个检测层。 层叠结构体设置在非磁性层上。 层叠结构体包括：参考层; 振荡层; 和中间层。 参考层设置在非磁性层上。 参考层的磁化是固定的。 振荡层设置在参考层上。 振荡层的磁化基本上平行于参考层的磁化，并且是可变的。 中间层设置在参考层和振荡层之间。 检测层设置在离层叠结构体的非磁性层上。

    Magnetoresistive element including a changing composition as distance increases away from an intermediate film, and magnetic head with the same
    8.
    发明授权
    Magnetoresistive element including a changing composition as distance increases away from an intermediate film, and magnetic head with the same 有权
    包括变化的组成的磁阻元件距离中间膜的距离增加，并且磁头与其相同

    公开(公告)号：US09013837B2

    公开(公告)日：2015-04-21

    申请号：US14206175

    申请日：2014-03-12

    申请人： Kabushiki Kaisha Toshiba

    发明人： Naoki Hase ,  Masayuki Takagishi ,  Susumu Hashimoto ,  Shuichi Murakami ,  Yousuke Isowaki ,  Masaki Kado ,  Hitoshi Iwasaki

    IPC分类号： G11B5/39 ,  G11B5/147 ,  G01R33/00 ,  G11B5/00

    CPC分类号： G01R33/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/3967 ,  G11B2005/0024 ,  Y10T428/1121

    摘要： A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first magnetic film; a second magnetic film; and an intermediate film of a nonmagnetic material disposed between the first magnetic film and the second magnetic film, at least one of the first magnetic film and the second magnetic film being formed of a material expressed as AxB1−x(65 at %≦x≦85 at %) where A is an alloy containing Co and at least one element selected from Fe and Mn, and B is an alloy containing Si or Ge, a Si concentration in the at least one of the first magnetic film and the second magnetic film decreasing and a Ge concentration increasing as a distance from the intermediate film increases.

    摘要翻译： 根据实施例的磁阻元件包括：磁阻效应膜，包括：第一磁膜; 第二磁性膜; 以及设置在所述第一磁性膜和所述第二磁性膜之间的非磁性材料的中间膜，所述第一磁性膜和所述第二磁性膜中的至少一个由表示为AxB1-x（65at％＆nlE; x＆amp; ; 85原子％）其中A是含有Co和至少一种选自Fe和Mn的元素的合金，B是含有Si或Ge的合金，第一磁性膜和第二磁性体中的至少一种中的Si浓度 随着距离中间膜的距离增加，Ge浓度增加。

    Magnetoresistive magnetic head with magnetoresistive film including a metal layer and a Heusler alloy layer, and magnetic recording and reproducing apparatus
    9.
    发明授权
    Magnetoresistive magnetic head with magnetoresistive film including a metal layer and a Heusler alloy layer, and magnetic recording and reproducing apparatus 有权
    具有包括金属层和Heusler合金层的磁阻膜的磁阻磁头和磁记录和再现装置

    公开(公告)号：US08970993B2

    公开(公告)日：2015-03-03

    申请号：US14165023

    申请日：2014-01-27

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hitoshi Iwasaki ,  Shuichi Murakami ,  Masayuki Takagishi ,  Susumu Hashimoto ,  Yousuke Isowaki ,  Naoki Hase ,  Masaki Kado

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3912

    摘要： A magnetic head according to an embodiment includes a first magnetic shield and a second magnetic shield that are opposed to each other, and a magnetoresistive film arranged between the first magnetic shield and the second magnetic shield, and including a first magnetic layer including a first metal layer that contains 90 at. % or more of Fe and a first Heusler alloy layer, a second magnetic layer arranged on a side of the first Heusler alloy layer opposite from the first magnetic layer, and an intermediate layer arranged between the first Heusler alloy layer and the second magnetic layer.

    摘要翻译： 根据实施例的磁头包括彼此相对的第一磁屏蔽和第二磁屏蔽，以及布置在第一磁屏蔽和第二磁屏蔽之间的磁阻膜，并且包括第一磁性层，第一磁性层包括第一金属 包含90的层。 Fe和第一Heusler合金层的％以上，配置在与第一磁性层相反的第一Heusler合金层的一侧的第二磁性层，以及布置在第一Heusler合金层和第二磁性层之间的中间层。