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1.发明申请Capacitor, method for fabricating the capacitor, and method for fabricating semiconductor device 有权电容器，制造电容器的方法以及制造半导体器件的方法公开(公告)号：US20030107076A1
公开(公告)日：2003-06-12
申请号：US10173596
申请日：2002-06-19
发明人： Jun Lin , Chung-Ming Chu , Toshiya Suzuki , Katsuhiko Hieda
IPC分类号： H01L021/00 , H01L027/108 , H01L029/76 , H01L031/119
CPC分类号： H01L28/60 , H01L27/10814 , H01L27/10882 , H01L27/10894 , H01L28/91
摘要： A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric film; performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing. Thus, the adhesion between the upper electrode and the capacitor dielectric film is improved, and capacitor characteristics can be improved.
摘要翻译： 制造电容器的方法包括以下步骤：在衬底上形成金属的下电极; 在下电极上形成氧化物电介质膜的电容器电介质膜; 在电容器电介质膜上沉积金属膜; 在沉积金属膜的步骤之后在氢含量气氛中进行热处理; 以及在进行热处理的步骤之后图案化金属膜以形成金属膜的上电极。 因此，改善了上电极和电容器电介质膜之间的粘附性，并且可以提高电容器特性。
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公开(公告)号：US20030001290A1
公开(公告)日：2003-01-02
申请号：US10183156
申请日：2002-06-28
发明人： Akihiro Nitayama , Katsuhiko Hieda
IPC分类号： H01L027/108
CPC分类号： H01L27/10876 , H01L27/10817 , H01L27/10823 , H01L27/10885 , H01L27/10888 , H01L27/10891 , H01L28/90
摘要： A semiconductor memory device comprises a plurality of columnar portions formed in memory cell array regions on a semiconductor substrate. The columnar portions are isolated from one another by a plurality of trenches, and these trenches have first and second bottoms that are different in depth. The semiconductor device comprises a plurality of cell transistors which include first diffusion layer regions formed in the first bottoms, which are shallower than the second bottoms, second diffusion layer regions formed in surface portions of the columnar portions, and a plurality of gate electrodes which are adjacent to both the first and second diffusion layer regions and extend along at least one side-surface portions of the columnar portions.
摘要翻译： 半导体存储器件包括形成在半导体衬底上的存储单元阵列区域中的多个柱状部分。 柱状部分通过多个沟槽彼此隔离，并且这些沟槽具有深度不同的第一和第二底部。 半导体器件包括多个单元晶体管，其包括形成在第一底部的第一扩散层区域，其比第二底部浅，形成在柱状部分的表面部分中的第二扩散层区域和多个栅电极 邻近第一和第二扩散层区域并且沿着柱状部分的至少一个侧表面部分延伸。
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公开(公告)号：US20020014600A1
公开(公告)日：2002-02-07
申请号：US09910919
申请日：2001-07-24
发明人： Takashi Sato , Katsuhiko Hieda
IPC分类号： G01N021/86
CPC分类号： G03F9/7026 , G03F7/70333 , G03F7/70358 , G03F7/70425 , G03F7/70466
摘要： Disclosed is a scanning exposure method, in which, when a pattern formed on a mask is transferred onto a wafer via an optical projection, the projecting region of the mask is limited by a slit, and the mask and the wafer are scanned in synchronism with the slit fixed so as to transfer the entire pattern region of the mask onto the wafer. In the scanning exposure method of the present invention, the exposure of the entire mask by the scanning of mask and the wafer is carried out twice by changing the exposure conditions. The first exposure and the second exposure are made opposite to each other in the scanning direction of the mask and the wafer so as to improve the pattern transfer accuracy.
摘要翻译： 公开了一种扫描曝光方法，其中当通过光学投影将形成在掩模上的图案转印到晶片上时，掩模的突出区域被狭缝限制，并且掩模和晶片被同步扫描 狭缝被固定以将掩模的整个图案区域转印到晶片上。 在本发明的扫描曝光方法中，通过改变曝光条件，通过掩模和晶片的扫描对整个掩模的曝光进行两次。 第一曝光和第二曝光在掩模和晶片的扫描方向上彼此相反，以提高图案转印精度。
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公开(公告)号：US20040012047A1
公开(公告)日：2004-01-22
申请号：US10317063
申请日：2002-12-12
发明人： Jun Lin , Toshiya Suzuki , Katsuhiko Hieda
IPC分类号： H01L029/94 , H01L027/108 , H01L021/8242 , H01L031/119 , H01L029/76
CPC分类号： H01L27/10852 , H01L21/31604 , H01L27/10894 , H01L28/40 , H01L28/55 , H01L28/90
摘要： On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer between the two electrodes made of oxide dielectric material. A temporary protective film is formed over the capacitor, the temporary protective film covering the capacitor. The semiconductor substrate with the temporary protective film is subjected to a heat treatment in a reducing atmosphere. The temporary protective film is removed. The semiconductor substrate with the temporary protective film removed is subjected to a heat treatment in an inert gas atmosphere or in a vacuum state. A protective film is formed over the capacitor, the protective film covering the capacitor. With these processes, leak current of the capacitor can be reduced.
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5.发明申请Semiconductor device having a three-dimensional capacitor such as a stack-type capacitor 失效具有诸如堆叠型电容器的三维电容器的半导体器件公开(公告)号：US20010025977A1
公开(公告)日：2001-10-04
申请号：US09816163
申请日：2001-03-26
发明人： Katsuhiko Hieda
IPC分类号： H01L029/76 , H01L029/94 , H01L031/119 , H01L027/108
CPC分类号： H01L27/11502 , H01L27/10855 , H01L27/11507 , H01L28/55 , H01L28/90 , H01L28/91
摘要： A plurality of storage node electrodes are formed on a semiconductor substrate. A capacitor insulating film is formed on the storage node electrodes. A plate electrode, facing the storage node electrodes, is formed on the capacitor insulating film. A cavity is formed in the plate electrode.
摘要翻译： 多个存储节点电极形成在半导体衬底上。 在存储节点电极上形成电容绝缘膜。 在电容器绝缘膜上形成面向存储节点电极的平板电极。 在平板电极中形成空腔。
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公开(公告)号：US20040104421A1
公开(公告)日：2004-06-03
申请号：US10352083
申请日：2003-01-28
发明人： Yoshio Ozawa , Katsuhiko Hieda , Atsuko Kawasaki
IPC分类号： H01L029/788 , H01L021/336
CPC分类号： H01L29/66825 , H01L21/28273 , H01L29/42324
摘要： In a method of manufacturing a semiconductor device having a nonvolatile semiconductor memory element with a two-layered gate structure in which a floating gate and control gate are stacked, a polysilicon layer serving as the floating gate is stacked on a silicon substrate via a tunnel insulating film. Then, the silicon layer, tunnel insulating film, and substrate are selectively etched to form an element isolation trench. A nitride film is formed on the sidewall surface of the silicon layer exposed into the element isolation trench. An oxide film is buried in the element isolation trench. A conductive film serving as the control gate is stacked on the oxide film and silicon layer via an electrode insulating film. The conductive film, electrode insulating film, and silicon layer are selectively etched to form the control gate and floating gate.
摘要翻译： 在制造半导体器件的方法中，该半导体器件具有堆叠浮置栅极和控制栅极的双层栅极结构的非易失性半导体存储元件，用作浮置栅极的多晶硅层通过隧道绝缘层叠在硅衬底上 电影。 然后，选择性地蚀刻硅层，隧道绝缘膜和衬底以形成元件隔离沟槽。 在露出到元件隔离沟槽中的硅层的侧壁表面上形成氮化物膜。 氧化膜被埋在元件隔离槽中。 用作控制栅极的导电膜通过电极绝缘膜堆叠在氧化膜和硅层上。 选择性地蚀刻导电膜，电极绝缘膜和硅层以形成控制栅极和浮动栅极。
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公开(公告)号：US20040079980A1
公开(公告)日：2004-04-29
申请号：US10368642
申请日：2003-02-20
发明人： Katsuhiko Hieda
IPC分类号： H01L027/108
CPC分类号： H01L27/0805 , H01L27/0203 , H01L27/0733 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A semiconductor device has a plurality of capacitors. The semiconductor device includes a first capacitor arranged on a substrate and including first upper and lower electrode layers between which a first capacitor insulation film is interposed, and a second capacitor arranged on the substrate and including second upper and lower electrode layers between which a second capacitor insulation film is interposed, the second upper and lower electrode layers having a same structure as that of the first upper and lower electrode layers, and the second capacitor having a per-unit-area capacity different from that of the first capacitor.
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8.发明申请公开(公告)号：US20020190024A1
公开(公告)日：2002-12-19
申请号：US10197406
申请日：2002-07-18
IPC分类号： C23C016/00 , C23F001/00
CPC分类号： C23C16/4405
摘要： Presented is an etching method capable of easily etching an oxide containing an alkaline-earth metal. One method is to etch the oxide by using an etching gas containing a halogen gas except for fluorine, an interhalogen compound consisting of only a halogen element except for fluorine, or a halogen hydride consisting of a halogen element except for fluorine and hydrogen. Particularly chlorides, bromides, and iodides of alkaline-earth metals have relatively high vapor pressures, so a thin film containing an alkaline-earth metal can be etched by using chlorine gas, bromine gas, or iodine gas. When a halogen gas containing fluorine is used, damages to SiO2 portions used in a film formation apparatus are prevented by coating these SiO2 portions with a fluoride of an alkaline-earth metal.
摘要翻译： 提出了能够容易地蚀刻含有碱土金属的氧化物的蚀刻方法。 一种方法是通过使用除了氟以外含有卤素气体的蚀刻气体，除了氟以外的仅由卤素元素组成的卤间化合物或除了氟和氢之外的卤素元素组成的卤素氢化物来蚀刻氧化物。 特别地，碱土金属的氯化物，溴化物和碘化物具有相对较高的蒸气压，因此可以通过使用氯气，溴气或碘气蚀刻含有碱土金属的薄膜。 当使用含氟的卤素气体时，通过用碱土金属的氟化物涂覆这些SiO 2部分来防止在成膜装置中使用的SiO 2部分的损伤。
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公开(公告)号：US20020011612A1
公开(公告)日：2002-01-31
申请号：US09916509
申请日：2001-07-30
发明人： Katsuhiko Hieda
IPC分类号： H01L029/80 , H01L031/112
CPC分类号： H01L29/785 , H01L21/823814 , H01L21/823821 , H01L21/823828 , H01L21/823878 , H01L21/845 , H01L27/0921 , H01L27/10817 , H01L27/10826 , H01L27/10852 , H01L27/10873 , H01L27/10885 , H01L27/1203 , H01L29/41791 , H01L29/66795 , H01L29/66818 , H01L29/7851 , H01L29/7853 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device comprises a convex semiconductor layer provided on a semiconductor substrate, a source region and a drain region provided in the convex semiconductor layer, and a gate electrode. The gate electrode has a side-wall gate portion provided over a side surface of the convex semiconductor layer in an insulated state with respect to the convex semiconductor layer.
摘要翻译： 半导体器件包括设置在半导体衬底上的凸形半导体层，设置在凸形半导体层中的源极区域和漏极区域以及栅极电极。 栅极电极具有在凸形半导体层的绝缘状态下设置在凸状半导体层的侧表面上的侧壁栅极部分。
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公开(公告)号：US20040097050A1
公开(公告)日：2004-05-20
申请号：US10705889
申请日：2003-11-13
发明人： Jun Lin , Chung-Ming Chu , Toshiya Suzuki , Katsuhiko Hieda
IPC分类号： H01L021/20
CPC分类号： H01L28/60 , H01L27/10814 , H01L27/10882 , H01L27/10894 , H01L28/91
摘要： A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric film; performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing. Thus, the adhesion between the upper electrode and the capacitor dielectric film is improved, and capacitor characteristics can be improved.
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