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11 条记录 (耗时 0.017 秒)

    Blue-enriched incandescent lamp
    1.
    发明授权
    Blue-enriched incandescent lamp 失效
    富集蓝炽灯

    公开(公告)号：US07362049B2

    公开(公告)日：2008-04-22

    申请号：US10905319

    申请日：2004-12-28

    申请人： Madis Raukas ,  Kailash C. Mishra

    发明人： Madis Raukas ,  Kailash C. Mishra

    IPC分类号： H01K1/26 ,  H01K1/32

    CPC分类号： H01K1/32

    摘要： A blue-enriched incandescent lamp having on the interior surface of its light transmissive glass envelope a coating in accordance with an aspect of the invention. The coating contains a phosphor that is energized by the ultraviolet/violet emission (

    摘要翻译： 一种富兰白炽灯，其在其透光玻璃的内表面上具有根据本发明的一个方面的涂层。 该涂层含有通过来自热丝的紫外/紫色发射（<420nm）激发的荧光体，使得其发射在420至490nm范围内的辐射。 在本发明的优选实施方案中，涂层含有铕激活的铝酸镁镁磷光体和蓝色颜料。

    Strain Relief Superlattices and Optoelectronic Devices Including the Same
    2.
    发明申请
    Strain Relief Superlattices and Optoelectronic Devices Including the Same 有权
    应变消除超晶格和包括其的光电器件

    公开(公告)号：US20150243840A1

    公开(公告)日：2015-08-27

    申请号：US14186483

    申请日：2014-02-21

    申请人： David W. Johnston ,  Richard Speer ,  Joseph Laski ,  Kailash C. Mishra

    发明人： David W. Johnston ,  Richard Speer ,  Joseph Laski ,  Kailash C. Mishra

    IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/06

    CPC分类号： H01L33/12 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

    摘要： Structures for transitioning between two layers of differing lattice parameters are disclosed. In some embodiments, the structures are in the form of a superlattice that serves as a strain relieving transition between two layers of differing lattice parameters. By controlling the properties of the superlattice, the superlattice can exhibit desirable properties such as transparency to light and lattice matching to one of the two layers of differing lattice parameters. Optoelectronic devices such as light emitting diodes including such superlattices are also disclosed.

    摘要翻译： 公开了用于在两层不同晶格参数之间转换的结构。 在一些实施例中，结构是超晶格的形式，其用作两层不同晶格参数之间的应变消除转变。 通过控制超晶格的性质，超晶格可以表现出期望的性质，例如对于光的透明度和对不同晶格参数的两层之一的晶格匹配。 还公开了诸如包括这种超晶格的发光二极管的光电子器件。

    Method for making a light emitting diode having a P-N junction doped with one or more luminescent activator ions
    3.
    发明授权
    Method for making a light emitting diode having a P-N junction doped with one or more luminescent activator ions 有权
    制造具有掺杂有一种或多种发光活化剂离子的P-N结的发光二极管的方法

    公开(公告)号：US07863068B2

    公开(公告)日：2011-01-04

    申请号：US12111380

    申请日：2008-04-29

    申请人： Kailash C. Mishra

    发明人： Kailash C. Mishra

    IPC分类号： H01L31/00 ,  H01L31/055

    CPC分类号： H01L33/325 ,  Y02E10/52 ,  Y10T428/265

    摘要： A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure having a semiconductor active layer between two confinement layers. The semiconductor active layer includes activator ions preferably selected from among Eu3+, Tb3+, Dy3+, Pr3+, Tm3+, and Mn2+. The electron-hole pairs trapped within the active layer sensitize the activator ions, causing the activator ions to emit light.

    摘要翻译： 发光二极管（LED）包括含有发光活化剂离子的p-n结。 来自激活剂离子的可见发射优选补充LED的带边发射，以产生来自LED的整体白色发射。 在优选实施例中，LED具有在两个限制层之间具有半导体活性层的双异质结结构。 半导体活性层包括优选选自Eu3 +，Tb3 +，Dy3 +，Pr3 +，Tm3 +和Mn2 +的活化剂离子。 捕获在有源层内的电子 - 空穴对使激活剂离子致敏，导致活化剂离子发光。

    METHOD OF MAKING WAVELENGTH CONVERTERS FOR SOLID STATE LIGHTING APPLICATIONS
    4.
    发明申请
    METHOD OF MAKING WAVELENGTH CONVERTERS FOR SOLID STATE LIGHTING APPLICATIONS 审中-公开
    制造用于固态照明应用的波长转换器的方法

    公开(公告)号：US20160023242A1

    公开(公告)日：2016-01-28

    申请号：US14444504

    申请日：2014-07-28

    申请人： Darshan Kundaliya ,  Kailash C. Mishra

    发明人： Darshan Kundaliya ,  Kailash C. Mishra

    IPC分类号： B05D3/06

    CPC分类号： B05D3/065 ,  H01L33/50 ,  H01L2933/0041

    摘要： Disclosed herein are technologies utilizing sacrificial material layers for producing and transferring wavelength converters for light emitting devices via lift-off. In some embodiments the technologies utilize a precursor in the form of a substrate having a sacrificial layer formed thereon. The sacrificial layer may possess one or more properties that allow it to survive processing of a conversion layer formed thereon, and to facilitate removal of the substrate via a lift off process. In some embodiments the sacrificial layer may be configured to survive relatively high temperature processing without substantially affecting the performance of the conversion layer, and to facilitate removal of the substrate via laser lift off.

    摘要翻译： 这里公开了利用牺牲材料层通过剥离来生产和转移发光器件的波长转换器的技术。 在一些实施方案中，该技术利用其上形成有牺牲层的衬底形式的前体。 牺牲层可以具有允许其在其上形成的转化层的处理中存活的一种或多种性质，并且有助于通过剥离工艺去除衬底。 在一些实施例中，牺牲层可以被配置为在相当高的温度处理下存活，而基本上不影响转换层的性能，并且便于通过激光剥离去除衬底。

    Strain relief superlattices and optoelectronic devices including the same
    5.
    发明授权
    Strain relief superlattices and optoelectronic devices including the same 有权
    应变消除超晶格和包括相同的光电器件

    公开(公告)号：US09240517B2

    公开(公告)日：2016-01-19

    申请号：US14186483

    申请日：2014-02-21

    申请人： David W. Johnston ,  Richard Speer ,  Joseph Laski ,  Kailash C. Mishra

    发明人： David W. Johnston ,  Richard Speer ,  Joseph Laski ,  Kailash C. Mishra

    IPC分类号： H01L29/06 ,  H01L33/12 ,  H01L33/06 ,  H01L33/32

    CPC分类号： H01L33/12 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

    摘要： Structures for transitioning between two layers of differing lattice parameters are disclosed. In some embodiments, the structures are in the form of a superlattice that serves as a strain relieving transition between two layers of differing lattice parameters. By controlling the properties of the superlattice, the superlattice can exhibit desirable properties such as transparency to light and lattice matching to one of the two layers of differing lattice parameters. Optoelectronic devices such as light emitting diodes including such superlattices are also disclosed.

    摘要翻译： 公开了用于在两层不同晶格参数之间转换的结构。 在一些实施例中，结构是超晶格的形式，其用作两层不同晶格参数之间的应变消除转变。 通过控制超晶格的性质，超晶格可以表现出期望的性质，例如对于光的透明度和对不同晶格参数的两层之一的晶格匹配。 还公开了诸如包括这种超晶格的发光二极管的光电子器件。

    METHOD FOR MAKING A LIGHT EMITTING DIODE HAVING A P-N JUNCTION DOPED WITH ONE OR MORE LUMINESCENT ACTIVATOR IONS
    8.
    发明申请
    METHOD FOR MAKING A LIGHT EMITTING DIODE HAVING A P-N JUNCTION DOPED WITH ONE OR MORE LUMINESCENT ACTIVATOR IONS 有权
    用于制造具有一个或多个发光活化剂离子的P-N结的发光二极管的方法

    公开(公告)号：US20080226903A1

    公开(公告)日：2008-09-18

    申请号：US12111380

    申请日：2008-04-29

    申请人： Kailash C. Mishra

    发明人： Kailash C. Mishra

    IPC分类号： C09K11/77 ,  H01J1/62

    CPC分类号： H01L33/325 ,  Y02E10/52 ,  Y10T428/265

    摘要： A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure having a semiconductor active layer between two confinement layers. The semiconductor active layer includes activator ions preferably selected from among Eu3+, Tb3+, Dy3+, Pr3+, Tm3+, and Mn2+. The electron-hole pairs trapped within the active layer sensitize the activator ions, causing the activator ions to emit light.

    摘要翻译： 发光二极管（LED）包括含有发光活化剂离子的p-n结。 来自激活剂离子的可见发射优选补充LED的带边发射，以产生来自LED的整体白色发射。 在优选实施例中，LED具有在两个限制层之间具有半导体活性层的双异质结结构。 半导体活性层包括优选选自Eu 3+，Tb 3+，Dy 3+，Pr 3+的活化剂离子， Tm 3+ +和/或O 2+。 捕获在有源层内的电子 - 空穴对使激活剂离子致敏，导致活化剂离子发光。