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1.发明授权Non-contact substrate support position sensing system and corresponding adjustments 有权非接触式基板支撑位置传感系统及相应调整公开(公告)号：US08441640B2
公开(公告)日：2013-05-14
申请号：US12238987
申请日：2008-09-26
CPC分类号： H01L21/68 , C30B25/12 , H01L21/67259 , H01L21/68785 , H01L21/68792
摘要： A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light.
摘要翻译： 衬底处理系统包括耦合到具有透明部分的处理室的外部的光学测量组件。 处理室包括用于支撑工件的参考物体和基座。 光学测量组件通过将光通过处理室的透明部分传输到处理室中来测量基座的横向位置，高度和倾斜度，并且检测来自基准物体和底座部分之后的反射光 反射光通过处理室的透明部分离开室。 调整基座的方法包括：分析反射光并调平基座，平移基座，将基座高度校准到预热环电平，以及响应分析的反射光检查基座的电平和位置。
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公开(公告)号：US08398777B2
公开(公告)日：2013-03-19
申请号：US12238921
申请日：2008-09-26
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68 , C30B25/12 , H01L21/67259 , H01L21/68785 , H01L21/68792
摘要： A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.
摘要翻译： 用于基板处理系统的基座定位组件系统包括刚性地连接到基座轴的基座，刚性地附接到基板处理系统的基准，横向调整组件，用于调节基座相对于基准的横向位置，以及 垂直调节组件，用于调节基座相对于基准的倾斜。 横向调节组件和垂直调节组件位于处理室的外部，并且通过基座轴联接到设置在处理室内的基座。 参考可以是环，并且横向调节组件使基座在环内基本上居中。 一种调节基座的方法包括调平基座，平移基座，将基座高度校准到预热环水平面，以及在旋转基座时检查基座的水平和位置。
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3.发明申请NON-CONTACT SUBSTRATE SUPPORT POSITION SENSING SYSTEM AND CORRESPONDING ADJUSTMENTS 有权非接触式基板支撑位置传感系统及相应调整公开(公告)号：US20090276097A1
公开(公告)日：2009-11-05
申请号：US12238987
申请日：2008-09-26
CPC分类号： H01L21/68 , C30B25/12 , H01L21/67259 , H01L21/68785 , H01L21/68792
摘要： A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light.
摘要翻译： 衬底处理系统包括耦合到具有透明部分的处理室的外部的光学测量组件。 处理室包括用于支撑工件的参考物体和基座。 光学测量组件通过将光通过处理室的透明部分传输到处理室中来测量基座的横向位置，高度和倾斜度，并且检测来自基准物体和底座部分之后的反射光 反射光通过处理室的透明部分离开室。 调整基座的方法包括：分析反射光并调平基座，平移基座，将基座高度校准到预热环电平，以及响应分析的反射光检查基座的电平和位置。
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公开(公告)号：US20090272719A1
公开(公告)日：2009-11-05
申请号：US12238921
申请日：2008-09-26
CPC分类号： H01L21/68 , C30B25/12 , H01L21/67259 , H01L21/68785 , H01L21/68792
摘要： A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.
摘要翻译： 用于基板处理系统的基座定位组件系统包括刚性地连接到基座轴的基座，刚性地附接到基板处理系统的基准，横向调整组件，用于调节基座相对于基准的横向位置，以及 垂直调节组件，用于调节基座相对于基准的倾斜。 横向调节组件和垂直调节组件位于处理室的外部，并且通过基座轴联接到设置在处理室内的基座。 参考可以是环，并且横向调节组件使基座在环内基本上居中。 一种调节基座的方法包括调平基座，平移基座，将基座高度校准到预热环水平面，以及在旋转基座时检查基座的水平和位置。
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5.发明授权公开(公告)号：US08512472B2
公开(公告)日：2013-08-20
申请号：US12270590
申请日：2008-11-13
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C23C16/45504
摘要： Methods and apparatus for controlling temperature and flow characteristics of process gases in a process chamber have been provided herein. In some embodiments, an apparatus for controlling temperature and flow characteristics of a process gas in a process chamber may include a gas pre-heat ring configured to be disposed about a substrate and having a labyrinthine conduit disposed therein, wherein the labyrinthine conduit has an inlet and outlet to facilitate the flow of the process gas therethrough.
摘要翻译： 本文提供了用于控制处理室中工艺气体的温度和流动特性的方法和装置。 在一些实施例中，用于控制处理室中的处理气体的温度和流动特性的装置可以包括气体预热环，其构造成围绕基板设置并且具有布置在其中的迷宫式导管，其中迷宫式管道具有入口 和出口以便于工艺气体流过其中。
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公开(公告)号：US07964038B2
公开(公告)日：2011-06-21
申请号：US12244604
申请日：2008-10-02
IPC分类号： C23C16/00
CPC分类号： H01L21/68785 , H01L21/67115 , H01L21/68742 , Y10T428/31504
摘要： Methods and apparatus for providing an improved azimuthal thermal uniformity of a substrate are provided herein. In some embodiments, a substrate support for use in a semiconductor process chamber includes a susceptor plate; and a supporting member to support a backside of the susceptor plate proximate an outer edge thereof, wherein the supporting member substantially covers the backside of the susceptor plate. In some embodiments, the substrate support is disposed in a process chamber having at least some lamps disposed below the supporting member and utilized for heating the back side of the susceptor plate.
摘要翻译： 本文提供了提供改善的基板的方位角热均匀性的方法和装置。 在一些实施例中，用于半导体处理室的衬底支撑件包括基座板; 以及支撑构件，其支撑靠近其外边缘的基座板的背面，其中支撑构件基本上覆盖基座板的背面。 在一些实施例中，衬底支撑件设置在具有至少一些设置在支撑构件下方并用于加热感受板的背面的灯的处理室中。
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7.发明申请METHODS AND APPARATUS FOR IMPROVED AZIMUTHAL THERMAL UNIFORMITY OF A SUBSTRATE 有权用于改善基板的AZIMUTHAL热均匀性的方法和装置公开(公告)号：US20100086784A1
公开(公告)日：2010-04-08
申请号：US12244604
申请日：2008-10-02
CPC分类号： H01L21/68785 , H01L21/67115 , H01L21/68742 , Y10T428/31504
摘要： Methods and apparatus for providing an improved azimuthal thermal uniformity of a substrate are provided herein. In some embodiments, a substrate support for use in a semiconductor process chamber includes a susceptor plate; and a supporting member to support a backside of the susceptor plate proximate an outer edge thereof, wherein the supporting member substantially covers the backside of the susceptor plate. In some embodiments, the substrate support is disposed in a process chamber having at least some lamps disposed below the supporting member and utilized for heating the back side of the susceptor plate.
摘要翻译： 本文提供了提供改善的基板的方位角热均匀性的方法和装置。 在一些实施例中，用于半导体处理室的衬底支撑件包括基座板; 以及支撑构件，其支撑靠近其外边缘的基座板的背面，其中支撑构件基本上覆盖基座板的背面。 在一些实施例中，衬底支撑件设置在具有至少一些设置在支撑构件下方并用于加热感受板的背面的灯的处理室中。
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公开(公告)号：US20130032084A1
公开(公告)日：2013-02-07
申请号：US13483002
申请日：2012-05-29
申请人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Quoc Vinh Truong , Jean R. Vatus , Visweswaren Sivaramakrishnan
发明人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong , Jean R. Vatus
CPC分类号： C30B25/14 , C30B25/105 , C30B25/12 , C30B25/165 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L31/1804
摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.
摘要翻译： 通过在具有交叉流沉积的硅前体耗尽模式中通过外延沉积沉积薄单晶硅晶片的系统可以包括：具有低总热容量，高发射率和小体积的基板载体; 具有快速升温，高效热量生产和加热空间控制的灯模块; 以及设计用于交叉流处理的歧管。 此外，衬底载体可以包括热反射器，以控制从载体和/或热扼流器的边缘的热损失，以将载体与歧管热隔离，允许对歧管进行独立的温度控制。 载体和基底可以被配置用于在基底的两侧上沉积 - 在两侧上具有释放层的基底和载体构造成在基底的两个表面上具有相等的工艺气流。 高体积可以由包括多个微型间歇反应器的沉积系统来解决。
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公开(公告)号：US06876442B2
公开(公告)日：2005-04-05
申请号：US10078071
申请日：2002-02-13
申请人： Jean R. Vatus , David K. Carlson , Arkadii V. Samoilov , Lance A. Scudder , Paul B. Comita , Annie A. Karpati
发明人： Jean R. Vatus , David K. Carlson , Arkadii V. Samoilov , Lance A. Scudder , Paul B. Comita , Annie A. Karpati
IPC分类号： C23C16/52 , H01L21/205 , H01L21/66 , G01J5/48 , G01R31/26
CPC分类号： H01L22/20
摘要： A method is provided wherein a temperature reading error of a pyrometer is avoided. An upper pyrometer is used to detect infrared radiation from a test layer formed on a test substrate under standard processing conditions. The infrared radiation from the test layer has a period having a length which is indicative of growth rate of the layer. The period is generally inversely proportional to the growth rate. The growth rate is directly related to the temperature.
摘要翻译： 提供了避免高温计的温度读数误差的方法。 在标准处理条件下，使用上高温计来检测在测试基板上形成的测试层的红外辐射。 来自测试层的红外辐射具有指示层的生长速率的长度的周期。 这个时期通常与增长率成反比。 生长速度与温度直接相关。
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公开(公告)号：US09255346B2
公开(公告)日：2016-02-09
申请号：US13483002
申请日：2012-05-29
申请人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Andrzej Kaszuba , Bozena Kaszuba , Quoc Vinh Truong , Jean R. Vatus
发明人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong , Jean R. Vatus
CPC分类号： C30B25/14 , C30B25/105 , C30B25/12 , C30B25/165 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L31/1804
摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.
摘要翻译： 通过在具有交叉流沉积的硅前体耗尽模式中通过外延沉积沉积薄单晶硅晶片的系统可以包括：具有低总热容量，高发射率和小体积的基板载体; 具有快速升温，高效热量生产和加热空间控制的灯模块; 以及设计用于交叉流处理的歧管。 此外，衬底载体可以包括热反射器，以控制从载体和/或热扼流器的边缘的热损失，以将载体与歧管热隔离，允许对歧管进行独立的温度控制。 载体和基底可以被配置用于在基底的两侧上沉积 - 在两侧上具有释放层的基底和载体构造成在基底的两个表面上具有相等的工艺气流。 高体积可以由包括多个微型间歇反应器的沉积系统来解决。
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