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    Silicon-containing layer deposition with silicon compounds
    3.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07540920B2

    公开(公告)日：2009-06-02

    申请号：US10688797

    申请日：2003-10-17

    申请人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/02

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX6, Si2RX6, Si2RX8, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.

    摘要翻译： 本发明的实施方案通常提供硅化合物的组合物和使用硅化合物沉积含硅膜的方法。 该方法采用将硅化合物引入衬底表面，并将一部分硅化合物硅基体作为含硅膜沉积。 配体是硅化合物的另一部分，并且被释放为原位蚀刻剂。 原位蚀刻剂支持选择性硅外延的生长。 硅化合物包括SiRX6，Si2RX6，Si2RX8，其中X独立地是氢或卤素，R是碳，硅或锗。 硅化合物还包括包含三个硅原子，第四碳原子，硅或锗的氢原子或卤原子与至少一个卤素的化合物，以及包含四个硅原子，第五个碳原子，硅或锗的化合物和 氢或卤素与至少一个卤素。

    Silicon-containing layer deposition with silicon compounds
    4.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07758697B2

    公开(公告)日：2010-07-20

    申请号：US11969139

    申请日：2008-01-03

    申请人： Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/02

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group Si4X8, Si4X10, Si5X10, and Si5X12, where X is independently a hydrogen or halogen.

    摘要翻译： 描述了沉积含硅膜的方法。 所述方法可以包括将硅化合物递送到表面或基底，并使硅化合物反应生长含硅膜。 硅化合物可以是一种或多种具有选自Si 4 X 8，Si 4 X 10，Si 5 X 10和Si 5 X 12的式的化合物，其中X独立地是氢或卤素。

    Silicon-containing layer deposition with silicon compounds
    5.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07645339B2

    公开(公告)日：2010-01-12

    申请号：US11549033

    申请日：2006-10-12

    申请人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/04

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.

    摘要翻译： 本发明的实施例涉及在衬底上沉积含硅材料的方法。 在一个实例中，提供了一种用于选择性和外延沉积含硅材料的方法，其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底，将基底暴露于含有新戊硅烷的工艺气体中， 以及在所述晶体表面上沉积外延层。 在另一个实例中，提供了一种用于覆盖沉积含硅材料的方法，其包括定位和加热含有结晶表面的基底和处理室内的特征表面，并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积 跨过结晶表面和特征表面的碳化硅毯层。 通常，碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。

    Process and apparatus for cleaning a silicon surface
    6.
    发明授权
    Process and apparatus for cleaning a silicon surface 失效

    公开(公告)号：US06494959B1

    公开(公告)日：2002-12-17

    申请号：US09493694

    申请日：2000-01-28

    申请人： Arkadii V. Samoilov ,  Dale R. DuBois ,  Bradley M. Curelop ,  David R. Carlson ,  Paul B. Comita

    发明人： Arkadii V. Samoilov ,  Dale R. DuBois ,  Bradley M. Curelop ,  David R. Carlson ,  Paul B. Comita

    IPC分类号： C23G100

    CPC分类号： H01L21/02046 ,  Y10S438/906

    摘要： A low pressure-high hydrogen flow rate process of cleaning a silicon wafer surface is described. The combination of process pressures below about 1 Torr with hydrogen flow rates up to about 3 SLM has been found to remove substantially all oxygen contamination from the silicon wafer surface at process temperatures less than about 800° C. without the use of a reactive gas. After processing at such process pressures and flow rates, even lower levels of oxygen contamination may be achieved by then increasing the process pressure, the hydrogen flow rate, and the process temperature, though the process temperature still remains less than 800° C. The combination of low pressure and high hydrogen flow rate can be achieved using a vacuum pumping speed of at least 30 cubic meters per hour. The present invention also describes an apparatus for cleaning a silicon wafer surface in which the processes of the present invention and other processes can be practiced.

    Method and a system for sealing an epitaxial silicon layer on a substrate
    7.
    发明授权
    Method and a system for sealing an epitaxial silicon layer on a substrate 有权
    用于密封衬底上的外延硅层的方法和系统

    公开(公告)号：US06685779B2

    公开(公告)日：2004-02-03

    申请号：US10076250

    申请日：2002-02-11

    申请人： David K Carlson ,  Paul B. Comita ,  Norma B. Riley ,  Dale R. Du Bois

    发明人： David K Carlson ,  Paul B. Comita ,  Norma B. Riley ,  Dale R. Du Bois

    IPC分类号： C23C1600

    CPC分类号： H01L21/67167 ,  C01B13/10 ,  C30B29/06 ,  C30B33/005 ,  H01L21/67017 ,  H01L21/67201 ,  H01L21/67745 ,  Y10S414/139

    摘要： According to one aspect of the invention, a method of processing a wafer is provided. The wafer is located in a wafer processing chamber of a system for processing a wafer. A silicon layer is then formed on the wafer while the wafer is located in the wafer processing chamber. The wafer is then transferred from the wafer processing chamber to a loadlock chamber of the system. Communication between the processing chamber and the loadlock chamber is closed off. The wafer is then exposed to ozone gas while located in the loadlock chamber, whereafter the wafer is removed from the loadlock chamber out of the system.

    摘要翻译： 根据本发明的一个方面，提供了一种处理晶片的方法。 晶片位于用于处理晶片的系统的晶片处理室中。 然后在晶片上形成硅层，同时晶片位于晶片处理室中。 然后将晶片从晶片处理室转移到系统的负载锁定室。 处理室和负载锁定室之间的通信被关闭。 然后将晶片暴露于臭氧气体，同时位于负载锁定室中，此后将晶片从负载锁定室移出系统外。

    Method of sealing an epitaxial silicon layer on a substrate
    9.
    发明授权
    Method of sealing an epitaxial silicon layer on a substrate 失效
    在衬底上密封外延硅层的方法

    公开(公告)号：US06376387B2

    公开(公告)日：2002-04-23

    申请号：US09350805

    申请日：1999-07-09

    申请人： David K Carlson ,  Paul B. Comita ,  Norma B. Riley ,  Dale R. Du Bois

    发明人： David K Carlson ,  Paul B. Comita ,  Norma B. Riley ,  Dale R. Du Bois

    IPC分类号： H01L21302

    CPC分类号： H01L21/67167 ,  C01B13/10 ,  C30B29/06 ,  C30B33/005 ,  H01L21/67017 ,  H01L21/67201 ,  H01L21/67745 ,  Y10S414/139

    摘要： According to one aspect of the invention, a method of processing a wafer is provided. The wafer is located in a wafer processing chamber of a system for processing a wafer. A silicon layer is then formed on the wafer while the wafer is located in the wafer processing chamber. The wafer is then transferred from the wafer processing chamber to a loadlock chamber of the system. Communication between the processing chamber and the loadlock chamber is closed off. The wafer is then exposed to ozone gas while located in the loadlock chamber, whereafter the wafer is removed from the loadlock chamber out of the system.

    摘要翻译： 根据本发明的一个方面，提供了一种处理晶片的方法。 晶片位于用于处理晶片的系统的晶片处理室中。 然后在晶片上形成硅层，同时晶片位于晶片处理室中。 然后将晶片从晶片处理室转移到系统的负载锁定室。 处理室和负载锁定室之间的通信被关闭。 然后将晶片暴露于臭氧气体，同时位于负载锁定室中，此后将晶片从负载锁定室移出系统外。