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    Method of fabricating a semiconductor device
    2.
    发明授权
    Method of fabricating a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07585706B2

    公开(公告)日：2009-09-08

    申请号：US11898951

    申请日：2007-09-18

    申请人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

    发明人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

    IPC分类号： H01L21/336

    CPC分类号： H01L29/66863 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7783

    摘要： The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

    摘要翻译： 本发明的半导体器件包括由在衬底上生长的III族氮化物半导体形成的有源区和通过氧化III族氮化物半导体而形成在有源区的周边部分中的绝缘氧化物膜。 在有源区域上，形成与延伸到绝缘氧化膜上并在绝缘氧化膜上具有延伸部分的有源区肖特基接触的栅电极，分别用作源电极和漏电极的欧姆电极形成有 沿着栅电极的栅极长度方向的侧边缘的空间。

    Semiconductor device having an active region formed from group III nitride
    3.
    发明授权
    Semiconductor device having an active region formed from group III nitride 有权
    具有由III族氮化物形成的有源区的半导体器件

    公开(公告)号：US07285806B2

    公开(公告)日：2007-10-23

    申请号：US09813304

    申请日：2001-03-21

    申请人： Katsunori Nishi ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

    发明人： Katsunori Nishi ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

    IPC分类号： H01L31/00 ,  H01L21/336

    CPC分类号： H01L29/66863 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7783

    摘要： The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

    摘要翻译： 本发明的半导体器件包括由在衬底上生长的III族氮化物半导体形成的有源区和通过氧化III族氮化物半导体而形成在有源区的周边部分中的绝缘氧化物膜。 在有源区域上，形成与延伸到绝缘氧化膜上并在绝缘氧化膜上具有延伸部分的有源区肖特基接触的栅电极，分别用作源电极和漏电极的欧姆电极形成有 沿着栅电极的栅极长度方向的侧边缘的空间。

    Semisonductor device
    5.
    发明申请
    Semisonductor device 审中-公开
    半导体装置

    公开(公告)号：US20050006664A1

    公开(公告)日：2005-01-13

    申请号：US10909425

    申请日：2004-08-03

    申请人： Kaoru Inoue ,  Yoshito Ikeda ,  Hiroyuki Masato

    发明人： Kaoru Inoue ,  Yoshito Ikeda ,  Hiroyuki Masato

    IPC分类号： H01L21/205 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L29/812 ,  H01L31/0328

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A semiconductor device includes an AlGaN film formed on a GaN film on a substrate, a gate electrode formed on the AlGaN film, and source and drain electrodes formed on either side of the gate electrode on the AlGaN film. An n-type InxGayAl1-x-yN film is interposed between the source and drain electrodes and the AlGaN film. Alternatively, the semiconductor device includes an n-type InxGayAl1-x-yN film formed on a GaN film on a substrate, a gate electrode formed on the InxGayAl1-x-yN film, and source and drain electrodes formed on either side of the gate electrode on the InxGayAl1-x-yN film.

    摘要翻译： 半导体器件包括形成在基板上的GaN膜上的AlGaN膜，形成在AlGaN膜上的栅电极，以及形成在AlGaN膜上的栅电极的两侧的源极和漏极。 在源电极和漏电极和AlGaN膜之间插入n型In x Ga y Al 1-x-y N膜。 或者，半导体器件包括形成在衬底上的GaN膜上的n型In x Ga y Al 1-x-y N膜，形成在In x Ga y Al 1-x-y N膜上的栅电极，以及形成在栅极两侧的源极和漏极 InxGayAl1-x-yN膜上的电极。

    Hetero-junction field effect transistor having an InGaAIN cap film
    9.
    发明授权
    Hetero-junction field effect transistor having an InGaAIN cap film 有权
    具有InGnAIN盖场的异质结场效应晶体管

    公开(公告)号：US06787820B2

    公开(公告)日：2004-09-07

    申请号：US10059226

    申请日：2002-01-31

    申请人： Kaoru Inoue ,  Yoshito Ikeda ,  Hiroyuki Masato

    发明人： Kaoru Inoue ,  Yoshito Ikeda ,  Hiroyuki Masato

    IPC分类号： H01L2906

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A semiconductor device includes an AlGaN film formed on a GaN film on a substrate, a gate electrode formed on the AlGaN film, and source and drain electrodes formed on either side of the gate electrode on the AlGaN film. An n-type InxGayAl1-x-yN film is interposed between the source and drain electrodes and the AlGaN film. Alternatively, the semiconductor device includes an n-type InxGayAl1-x-yN film formed on a GaN film on a substrate, a gate electrode formed on the InxGayAl1-x-yN film, and source and drain electrodes formed on either side of the gate electrode on the InxGayAl1-x-yN film.

    摘要翻译： 半导体器件包括形成在基板上的GaN膜上的AlGaN膜，形成在AlGaN膜上的栅电极，以及形成在AlGaN膜上的栅电极的两侧的源极和漏极。 在源电极和漏电极和AlGaN膜之间插入n型In x Ga y Al 1-x-y N膜。 或者，半导体器件包括形成在衬底上的GaN膜上的n型In x Ga y Al 1-x-y N膜，形成在In x Ga y Al 1-x-y N膜上的栅电极，以及形成在栅极两侧的源极和漏极 InxGayAl1-x-yN膜上的电极。