Method for Forming Antireflection Film
    1.
    发明申请
    Method for Forming Antireflection Film 审中-公开
    抗反射膜的形成方法

    公开(公告)号:US20090214796A1

    公开(公告)日:2009-08-27

    申请号:US11916829

    申请日:2006-06-09

    IPC分类号: B05D3/00

    CPC分类号: G02B1/113

    摘要: The invention provides a method for forming antireflection films comprising a step that simultaneously accomplishes sintering of a coating film containing an antireflection film precursor formed on the surface of a glass body, and tempering of the glass body. It is thereby possible to form antireflection films at satisfactorily low cost.

    摘要翻译: 本发明提供一种形成抗反射膜的方法,其包括同时完成含有形成在玻璃体表面上的抗反射膜前体的涂膜和玻璃体的回火的步骤的步骤。 从而可以以令人满意的低成本形成抗反射膜。

    PV MODULE AND METHOD FOR MANUFACTURING PV MODULE
    2.
    发明申请
    PV MODULE AND METHOD FOR MANUFACTURING PV MODULE 审中-公开
    PV模块和PV模块的制造方法

    公开(公告)号:US20090314343A1

    公开(公告)日:2009-12-24

    申请号:US12524082

    申请日:2008-02-26

    IPC分类号: H01L31/0216 H01L31/18

    摘要: Provided is a photovoltaic (PV) module by which electric power generation efficiency can be improved by improving light use rate. An encapsulant (202) is permitted to be a first layer (A cover glass (201) and the encapsulant (202) are considered optically equivalent, since their refractive indexes are substantially the same), a light trapping film (300) to be a second layer, an anti-reflective layer (104) to be a third layer, and an n-type layer (103) to be a fourth layer. When the reflective indexes of the layers are expressed as first reflective index (n1), second reflective index (n2), third reflective index (n3) and fourth reflective index (n4), relationship n1≦n2≦n3≦n4 is satisfied. The light trapping film (300) of the second layer, i.e., one layer among the light transmitting layers, has a structured shape on an incident side (300a) where incident light (205) enters.

    摘要翻译: 提供了通过提高光利用率可以提高发电效率的光伏(PV)模块。 允许密封剂(202)为第一层(盖玻璃(201),并且密封剂(202)被认为是光学等效的,因为它们的折射率基本上相同),光捕获膜(300)为 第二层,作为第三层的抗反射层(104)和作为第四层的n型层(103)。 当这些层的反射指数被表示为第一反射指数(n1),第二反射指数(n2),第三反射指数(n3)和第四反射指数(n4)时,关系n1 <= n2 <= n3 <= n4 满意。 第二层的光捕获膜(300),即透光层中的一层,在入射光(205)入射的入射侧(300a)上具有结构形状。

    WAVELENGTH CONVERSION TYPE PHOTOVOLTAIC CELL SEALING SHEET AND PHOTOVOLTAIC CELL MODULE
    3.
    发明申请
    WAVELENGTH CONVERSION TYPE PHOTOVOLTAIC CELL SEALING SHEET AND PHOTOVOLTAIC CELL MODULE 审中-公开
    波长转换型光伏电池密封片和光电池模块

    公开(公告)号:US20130074928A1

    公开(公告)日:2013-03-28

    申请号:US13638085

    申请日:2011-03-28

    IPC分类号: H01L31/0232 H01L31/055

    摘要: A wavelength conversion type photovoltaic cell sealing sheet of the present invention includes a dispersion medium resin, and a fluorescent material having an absorption wavelength peak at from 300 to 450 nm, wherein a content of an ultraviolet absorber other than the fluorescent substance is 0.15 parts by mass or less with respect to 100 parts by mass of the dispersion medium resin. Furthermore, a photovoltaic cell module of the present invention has a photovoltaic cell and the wavelength conversion type photovoltaic cell sealing sheet.

    摘要翻译: 本发明的波长转换型光伏电池用密封片包括分散介质树脂和在300〜450nm具有吸收波长峰值的荧光体,其中除了荧光物质以外的紫外线吸收剂的含量为0.15份 相对于100质量份的分散介质树脂为质量以下。 此外,本发明的光伏电池模块具有光伏电池和波长转换型光伏电池密封片。

    Powder removing apparatus, molding system, and method of manufacturing molded object
    5.
    发明授权
    Powder removing apparatus, molding system, and method of manufacturing molded object 有权
    除粉装置,成型系统及成形体的制造方法

    公开(公告)号:US09475234B2

    公开(公告)日:2016-10-25

    申请号:US13590689

    申请日:2012-08-21

    申请人: Hiroaki Morikawa

    发明人: Hiroaki Morikawa

    IPC分类号: B29C67/00

    摘要: A powder removing apparatus includes a box, a stage moving mechanism, and a powder removing processing mechanism. The box has a main body with an opening and a stage movably provided in the main body. The box is capable of accommodating a molded object and non-bonding powder so as to arrange the molded object, which is formed using powder according to a rapid prototyping technique, on the stage together with the non-bonding powder. The stage moving mechanism is capable of moving the stage upward relative to the main body inside the main body. The powder removing processing mechanism is configured to remove the non-bonding powder existing around the molded object extruded by a driving operation of the stage moving mechanism via the opening.

    摘要翻译: 粉末去除装置包括盒,台移动机构和粉末去除处理机构。 该盒具有主体,其具有可移动地设置在主体中的开口和台。 该盒能够容纳模制物体和非粘合粉末,以便将与根据快速成型技术的粉末形成的成型物体一起,与非粘合粉末一起在舞台上布置。 舞台移动机构能够相对于主体内的主体向上移动舞台。 粉末去除处理机构被构造成通过该开口移除通过台架移动机构的驱动操作而挤出的成型体上存在的非粘结粉末。

    Trajectory interpolation apparatus and method
    6.
    发明授权
    Trajectory interpolation apparatus and method 有权
    轨迹插值装置及方法

    公开(公告)号:US08873805B2

    公开(公告)日:2014-10-28

    申请号:US13590277

    申请日:2012-08-21

    IPC分类号: G06K9/00 G08G1/00 G08G1/01

    摘要: A trajectory interpolation apparatus is disclosed. The first storage part stores first time and first location information of a movable body at the first time. The second storage stores second time and second location information of the movable body at the second time. The calculation part calculates a first moving distance from the first time and a second moving distance from the second time based on a relationship between the time and the speed stored in the second storage part, regarding third time between the first time and the second time. The determination part determines, as the interpolation point, one of intersection points for a circle in which the first location is set as its center and the first moving distance is set as its radius, and another circle in which the second location is set as its center and the second moving distance is set as its radius.

    摘要翻译: 公开了一种轨迹插值装置。 第一存储部件在第一时间存储可移动体的第一时间和第一位置信息。 第二存储器第二次存储可移动体的第二和第二位置信息。 计算部分基于第一时间和第二时间之间的第三时间,基于存储在第二存储部分中的时间和速度之间的关系,从第一次计算第一移动距离和第二移动距离。 确定部分确定作为内插点的一个圆的第一位置被设置为其中心并且将第一移动距离设置为其半径的圆的交点,并且将另一个圆设置为第二位置 中心,第二移动距离设为其半径。

    APPARATUS AND METHOD FOR COORDINATE CODING, AND METHOD AND APPARATUS FOR DISTANCE CALCULATION
    8.
    发明申请
    APPARATUS AND METHOD FOR COORDINATE CODING, AND METHOD AND APPARATUS FOR DISTANCE CALCULATION 有权
    用于坐标编码的装置和方法,以及用于距离计算的方法和装置

    公开(公告)号:US20130013661A1

    公开(公告)日:2013-01-10

    申请号:US13541376

    申请日:2012-07-03

    IPC分类号: G06F7/38

    CPC分类号: G01C21/20

    摘要: An apparatus includes a unit dividing a region into blocks having a predetermined bit length and generating addition data having the predetermined bit length corresponding to coordinate data, a unit storing storage data having the predetermined bit length, a unit generating composite data having a bit length twice the length of the predetermined bit length by connecting the addition data to the storage data, and storing the composite data, and a unit repeating an operation of designating the bit length of the composite data as the predetermined bit length, instructing to generate the addition data, and instructing to generate and store the composite data. The number of different bits between a bit string of a location corresponding to the input coordinate data and a bit string of a reference location tends to increase as a distance between the location corresponding to the coordinate data and the reference location increases.

    摘要翻译: 一种装置包括将区域划分成具有预定位长度的块并产生具有与坐标数据相对应的预定位长度的附加数据的单元,存储具有预定位长度的存储数据的单元,具有位长度两倍的单位生成单元 通过将加法数据连接到存储数据,并存储合成数据的预定位长度的长度,以及重复指定复合数据的位长度的操作的单元作为预定位长度,指示生成相加数据 并指示生成和存储复合数据。 对应于输入坐标数据的位置的位串与参考位置的位串之间的不同位的数目趋向于随着对应于坐标数据的位置和参考位置之间的距离增加而增加。

    PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF 有权
    光伏器件及其制造方法

    公开(公告)号:US20110053310A1

    公开(公告)日:2011-03-03

    申请号:US12989098

    申请日:2008-04-30

    IPC分类号: H01L31/0352

    摘要: The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.

    摘要翻译: 该制造方法包括:在光入射表面侧的整个表面上形成P型硅衬底和其中N型杂质以第一浓度扩散的高浓度N型扩散层; 在高浓度N型扩散层上形成耐腐蚀性膜,在蚀刻电阻膜的凹部形成区域内的规定位置形成细孔; 通过在所述细孔的形成位置周围蚀刻所述硅基板而形成凹部,以便不将所述高浓度N型扩散层留在所述凹部形成区域内; 在其上形成凹部的表面上形成其中N型杂质以低于第一浓度的第二浓度扩散的低浓度N型扩散层; 以及在所述硅衬底的光入射表面侧的电极形成区域中形成栅电极。

    Solar Battery and Production Method Thereof
    10.
    发明申请
    Solar Battery and Production Method Thereof 审中-公开
    太阳能电池及其制作方法

    公开(公告)号:US20090101197A1

    公开(公告)日:2009-04-23

    申请号:US11920154

    申请日:2005-05-11

    申请人: Hiroaki Morikawa

    发明人: Hiroaki Morikawa

    IPC分类号: H01L31/00 H01L21/4763

    摘要: Included are a semiconductor layer that is formed on a light receiving surface of a semiconductor substrate and is of a type opposite to that of said semiconductor substrate, an electrode of a semiconductor layer that is of the same type as that of the semiconductor layer of said light receiving surface and is formed on a rear surface opposite to said light receiving surface, an electrode that is of the same type as that of said semiconductor substrate and is electrically insulated from said electrode of the semiconductor layer of the same type as that of the semiconductor layer of said light receiving surface formed on said rear surface, and a semiconductor layer that is of the same type as that of the semiconductor layer of said light receiving surface and electrically connects between the semiconductor layer of said light receiving surface and said electrode of the semiconductor layer of the same type as that of the semiconductor layer of said light receiving surface formed on said rear surface.

    摘要翻译: 包括半导体层,其形成在半导体衬底的光接收表面上并且具有与所述半导体衬底的类型相反的类型,与所述半导体衬底的半导体层的半导体层相同类型的半导体层的电极 光接收表面并且形成在与所述光接收表面相对的后表面上,电极与所述半导体衬底的类型相同,并且与所述半导体层的与所述半导体衬底相同类型的所述电极电绝缘 形成在所述后表面上的所述光接收表面的半导体层,以及与所述光接收表面的半导体层相同类型的半导体层,并且将所述光接收表面的半导体层与所述电极之间的电极 与形成在所述光接收表面上的半导体层相同类型的半导体层 后表面。