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    Method and system employing wideband signals for RF wakeup
    3.
    发明授权
    Method and system employing wideband signals for RF wakeup 有权
    用于RF唤醒的宽带信号的方法和系统

    公开(公告)号：US08787840B2

    公开(公告)日：2014-07-22

    申请号：US11432074

    申请日：2006-05-10

    Applicant: Bhaskar Srinivasan ,  Abtin Keshavarzian ,  Dhananjay Lal

    Inventor： Bhaskar Srinivasan ,  Abtin Keshavarzian ,  Dhananjay Lal

    IPC: H04B7/00

    CPC classification number: H04W52/0245 ,  H04W84/18 ,  Y02D70/00

    Abstract: A method of reducing an energy consumption of a wireless network, the method including periodically entering a sleep mode by a receiver node, broadcasting a signal simultaneously across a wide band frequency range, upon waking up from the sleep mode, listening by the receiver node to only a first narrow part of the wide band frequency range, the receiver node subsequently either returning to sleep if a signal strength of the broadcasted signal is less than a predefined signal strength threshold, or staying awake for an additional period of time if the signal strength of the broadcasted signal is greater than the predefined signal strength threshold.

    Abstract translation: 一种降低无线网络的能量消耗的方法，所述方法包括接收机节点周期性地进入睡眠模式，在从睡眠模式唤醒时在宽频带范围内同时广播信号，由接收机节点收听 只有宽带频率范围的第一窄部分，如果广播信号的信号强度小于预定信号强度阈值，则接收机节点随后返回睡眠，或者如果信号强度 的广播信号大于预定信号强度阈值。

    Memory cell structures and methods
    4.
    发明授权
    Memory cell structures and methods 有权
    记忆体结构和方法

    公开(公告)号：US08498156B2

    公开(公告)日：2013-07-30

    申请号：US13554278

    申请日：2012-07-20

    Applicant: Gurtej S. Sandhu ,  Bhaskar Srinivasan

    Inventor： Gurtej S. Sandhu ,  Bhaskar Srinivasan

    IPC: G11C16/04 ,  H01L29/788

    CPC classification number: G11C16/0416 ,  G11C16/0483

    Abstract: Memory cell structures and methods are described herein. One or more memory cells include a transistor having a charge storage node, a dielectric material positioned between the charge storage node and a channel region of the transistor, the channel region positioned between a source region and a drain region, and a first electrode of a diode coupled to the charge storage node.

    Abstract translation: 本文描述了存储单元结构和方法。 一个或多个存储单元包括具有电荷存储节点的晶体管，位于电荷存储节点和晶体管的沟道区之间的电介质材料，位于源区和漏区之间的沟道区，以及位于源区和漏区之间的第一电极 耦合到电荷存储节点的二极管。

    Device having complex oxide nanodots
    6.
    发明授权
    Device having complex oxide nanodots 有权
    器件具有复杂的氧化物纳米点

    公开(公告)号：US08203179B2

    公开(公告)日：2012-06-19

    申请号：US12949558

    申请日：2010-11-18

    Applicant: Nirmal Ramaswamy ,  Gurtej Sandhu ,  Bhaskar Srinivasan ,  John Smythe

    Inventor： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Bhaskar Srinivasan ,  John Smythe

    IPC: H01L29/788

    CPC classification number: H01L21/31691 ,  H01L21/28273 ,  H01L21/3142 ,  H01L29/42332 ,  H01L29/7881

    Abstract: Devices are disclosed, such as those having a memory cell. The memory cell includes an active area formed of a semiconductor material; a first dielectric over the semiconductor material; a second dielectric comprising a material having a perovskite structure over the first dielectric; a third dielectric over the second dielectric; and a gate electrode over the third dielectric.

    Abstract translation: 公开了诸如具有存储器单元的器件。 存储单元包括由半导体材料形成的有源区; 半导体材料上的第一电介质; 第二电介质，其包括在所述第一电介质上方具有钙钛矿结构的材料; 在所述第二电介质上的第三电介质; 以及位于第三电介质上的栅电极。

    Select devices including an open volume, memory devices and systems including same, and methods for forming same
    7.
    发明授权
    Select devices including an open volume, memory devices and systems including same, and methods for forming same 有权
    选择包括开放卷的设备，包括其的存储设备和系统以及用于形成它们的方法

    公开(公告)号：US08008162B2

    公开(公告)日：2011-08-30

    申请号：US12274181

    申请日：2008-11-19

    Applicant: Bhaskar Srinivasan ,  Gurtej S. Sandhu

    Inventor： Bhaskar Srinivasan ,  Gurtej S. Sandhu

    IPC: H01L21/20

    CPC classification number: H01L29/88 ,  H01L21/3205 ,  H01L27/1021 ,  Y10S438/957

    Abstract: Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.

    Abstract translation: 公开了包括用作具有低介电常数的高带隙材料的开放体积的装置。 开放体积可以在选择装置中提供更非线性的非对称I-V曲线和增强的整流行为。 选择装置可以包括例如金属 - 绝缘体 - 绝缘体 - 金属（MIIM）二极管。 可以使用各种方法来形成包括这种选择装置的选择装置和存储器系统。 存储器件和电子系统包括这样的选择器件。

    Hybrid localization in wireless networks
    8.
    发明授权
    Hybrid localization in wireless networks 有权
    无线网络中的混合本地化

    公开(公告)号：US07941157B2

    公开(公告)日：2011-05-10

    申请号：US11274584

    申请日：2005-11-15

    Applicant: Bhaskar Srinivasan ,  Sharmila Ravula

    Inventor： Bhaskar Srinivasan ,  Sharmila Ravula

    IPC: H04W24/00 ,  H04L12/28

    CPC classification number: H04L41/12 ,  G01S5/0263 ,  G01S5/0289 ,  H04W64/00 ,  H04W84/18

    Abstract: A hybrid localization method and a wireless network that performs the method are disclosed herein. In an embodiment of a hybrid localization technique, one or more sensor nodes in the network switch between different localization techniques depending on location area conditions. This technique chooses the most accurate localization technique for the given location area conditions, and thus potentially provides the best possible location accuracy for those conditions. A representative set of simulations and experiments verify the potential performance improvement realized with embodiments of the hybrid localization technique.

    Abstract translation: 本文公开了执行该方法的混合定位方法和无线网络。 在混合定位技术的实施例中，网络中的一个或多个传感器节点根据位置区域条件在不同的定位技术之间切换。 该技术为给定的位置区域条件选择最精确的定位技术，因此潜在地为这些条件提供最佳位置精度。 一组代表性的模拟和实验验证了利用混合定位技术的实施方案实现的潜在性能改进。

    HIGH-PERFORMANCE DIODE DEVICE STRUCTURE AND MATERIALS USED FOR THE SAME
    9.
    发明申请
    HIGH-PERFORMANCE DIODE DEVICE STRUCTURE AND MATERIALS USED FOR THE SAME 有权
    用于其的高性能二极管器件结构和材料

    公开(公告)号：US20110089413A1

    公开(公告)日：2011-04-21

    申请号：US12580013

    申请日：2009-10-15

    Applicant: Gurtej Sandhu ,  Bhaskar Srinivasan

    Inventor： Gurtej Sandhu ,  Bhaskar Srinivasan

    IPC: H01L29/12 ,  H01L21/329

    CPC classification number: H01L29/24 ,  H01L27/24 ,  H01L45/00

    Abstract: A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.

    Abstract translation: 包括二极管的二极管和存储器件，其中二极管包括导电部分和由第一材料形成的另一部分，该第一材料具有允许在向材料施加电压时第一次降低材料的电阻率的特性，从而允许电流 流过其中，并且具有允许第一材料的电阻率响应于第一材料的温度升高而第二次降低的特征。

    Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials
    10.
    发明申请
    Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials 失效
    具有包含多种金属氧化物的材料的介电区域的电容器

    公开(公告)号：US20100315760A1

    公开(公告)日：2010-12-16

    申请号：US12483474

    申请日：2009-06-12

    Applicant: Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

    Inventor： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

    IPC: H01G4/10

    CPC classification number: H01L28/56 ,  H01G4/10 ,  H01L27/108

    Abstract: Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

    Abstract translation: 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

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