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31 条记录 (耗时 0.025 秒)

    Oxygen diffusion blocking semiconductor capacitor
    1.
    发明授权
    Oxygen diffusion blocking semiconductor capacitor 失效
    氧扩散阻塞半导体电容器

    公开(公告)号：US06407422B1

    公开(公告)日：2002-06-18

    申请号：US09556571

    申请日：2000-04-24

    申请人： Katsuaki Asano ,  Yasuyuki Ito ,  Shun Mitarai ,  Akihiko Ochiai

    发明人： Katsuaki Asano ,  Yasuyuki Ito ,  Shun Mitarai ,  Akihiko Ochiai

    IPC分类号： H01L27108

    CPC分类号： H01L28/75 ,  H01L21/28568 ,  H01L28/55

    摘要： Provided is a semiconductor memory device in which defective contact, deterioration in transistor characteristics and other problems are solved with a thermally stable, conductive diffusion barrier layer against oxygen, and against constituent elements in a plug material and a lower electrode, formed at the interface between a plug and the lower electrode made of a noble metal. The semiconductor memory device comprises a dielectric capacitor of a stacked structure including a first electrode (a lower electrode), a dielectric film and a second electrode (an upper electrode) and a conductive plug connected to the lower electrode, wherein the lower electrode connected to the conductive plug includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and the metal suboxide layer and the diffusion barrier layer are stacked in the order from the conductive plug side of the lower electrode.

    摘要翻译： 提供了一种半导体存储器件，其中通过针对氧的热稳定的导电扩散阻挡层以及针对形成在插塞材料和下电极之间的界面处的构成元件来解决不良接触，晶体管特性劣化和其他问题 插头和由贵金属制成的下电极。 半导体存储器件包括具有第一电极（下电极），电介质膜和第二电极（上电极）和连接到下电极的导电插塞的堆叠结构的介质电容器，其中下电极连接到 导电插塞包括具有导电性的金属低氧化物层和阻挡氧的扩散的扩散阻挡层，并且金属低氧化物层和扩散阻挡层以下电极的导电插塞侧的顺序层叠。

    Micromachine and method of producing the same
    2.
    发明申请
    Micromachine and method of producing the same 失效
    微机械及其制造方法

    公开(公告)号：US20060049895A1

    公开(公告)日：2006-03-09

    申请号：US10537132

    申请日：2003-11-25

    申请人： Masahiro Tada ,  Takashi Kinoshita ,  Shun Mitarai ,  Yasuyuki Ito

    发明人： Masahiro Tada ,  Takashi Kinoshita ,  Shun Mitarai ,  Yasuyuki Ito

    IPC分类号： H03H9/00

    CPC分类号： H03H3/0072 ,  H03H9/2405 ,  H03H2009/02511

    摘要： Disclosed is a micromachine as a high-frequency filter which includes a high Q value and is suitable for higher frequency bands. The micromachine (1) includes an output electrode (7) formed on a substrate (5), an interlayer insulating film (9) which covers the substrate (5) and includes an opening (9a) whose bottom is the output electrode (7), and a beltlike resonator electrode (11) so formed on the interlayer insulating film (9) as to traverse above the space (A) in the opening (9a), with the resonator electrode (11) being concave toward the opening (9a) along the side wall of the opening (9a).

    摘要翻译： 公开了作为高频滤波器的微机械，其包括高Q值并且适用于较高频带。 微机械（1）包括形成在基板（5）上的输出电极（7），覆盖基板（5）的层间绝缘膜（9），其中底部是输出电极（7） ）和形成在层间绝缘膜（9）上的带状谐振器电极（11），以横越开口（9a）中的空间（A）上方，谐振器电极（11）朝向开口凹入 9a）沿着开口（9a）的侧壁。

    Micromachine and method of producing the same
    3.
    发明授权
    Micromachine and method of producing the same 失效
    微机械及其制造方法

    公开(公告)号：US07212081B2

    公开(公告)日：2007-05-01

    申请号：US10537132

    申请日：2003-11-25

    申请人： Masahiro Tada ,  Takashi Kinoshita ,  Shun Mitarai ,  Yasuyuki Ito

    发明人： Masahiro Tada ,  Takashi Kinoshita ,  Shun Mitarai ,  Yasuyuki Ito

    IPC分类号： H03H9/24 ,  B81B3/00 ,  B81C1/00

    CPC分类号： H03H3/0072 ,  H03H9/2405 ,  H03H2009/02511

    摘要： Disclosed is a micromachine as a high-frequency filter which includes a high Q value and is suitable for higher frequency bands. The micromachine (1) includes an output electrode (7) formed on a substrate (5), an interlayer insulating film (9) which covers the substrate (5) and includes an opening (9a) whose bottom is the output electrode (7), and a beltlike resonator electrode (11) so formed on the interlayer insulating film (9) as to traverse above the space (A) in the opening (9a), with the resonator electrode (11) being concave toward the opening (9a) along the side wall of the opening (9a).

    摘要翻译： 公开了作为高频滤波器的微机械，其包括高Q值并且适用于较高频带。 微机械（1）包括形成在基板（5）上的输出电极（7），覆盖基板（5）的层间绝缘膜（9），其中底部是输出电极（7） ）和形成在层间绝缘膜（9）上的带状谐振器电极（11），以横越开口（9a）中的空间（A）上方，谐振器电极（11）朝向开口凹入 9a）沿着开口（9a）的侧壁。

    Semiconductor memory device with less characteristic deterioration of dielectric thin film
    5.
    发明授权
    Semiconductor memory device with less characteristic deterioration of dielectric thin film 有权
    具有电介质薄膜特性劣化的半导体存储器件

    公开(公告)号：US06246082B1

    公开(公告)日：2001-06-12

    申请号：US09176508

    申请日：1998-10-21

    申请人： Shun Mitarai ,  Shigeo Ohnishi ,  Tohru Hara

    发明人： Shun Mitarai ,  Shigeo Ohnishi ,  Tohru Hara

    IPC分类号： H01L2976

    CPC分类号： H01L21/7687 ,  H01L27/1085 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

    摘要： There is provided a semiconductor memory device with extremely less deterioration of characteristics of dielectric thin film and with high stability. A TaSiN barrier metal layer 13 is formed on a Pt upper electrode 12. This TaSiN barrier metal layer 13 has electrical conductivity and hydrogen-gas blocking property and besides has an amorphous structure stable in high temperature region without crystallizing even during firing for crystallization of an oxide ferroelectric thin film (SBT thin film) 11. Then, hydrogen gas generated during later formation of a second interlayer insulating film 15 is reliably blocked from invading into the oxide ferroelectric thin film 11, by which characteristic deterioration of the oxide ferroelectric thin film 11 due to hydrogen gas is prevented.

    摘要翻译： 提供了具有极低的电介质薄膜劣化和高稳定性的半导体存储器件。 在Pt上部电极12上形成TaSiN阻挡金属层13.该TaSiN阻挡金属层13具有导电性和氢气阻断性，而且即使在焙烧期间也具有稳定的高温区域的非晶结构， 氧化物铁电薄膜（SBT薄膜）11.然后，可靠地阻止在后续形成第二层间绝缘膜15期间产生的氢气侵入氧化物铁电薄膜11，由此氧化物强电介质薄膜11的特性劣化 由于氢气被阻止。

    High frequency device
    7.
    发明授权
    High frequency device 有权
    高频设备

    公开(公告)号：US08432316B2

    公开(公告)日：2013-04-30

    申请号：US12860140

    申请日：2010-08-20

    申请人： Shun Mitarai ,  Minehiro Tonosaki ,  Koichi Ikeda

    发明人： Shun Mitarai ,  Minehiro Tonosaki ,  Koichi Ikeda

    IPC分类号： H01Q1/38 ,  H01Q5/00 ,  H01Q9/04

    CPC分类号： H01F17/0006 ,  H01F2017/0046 ,  H01L2224/16225

    摘要： A high frequency device having a membrane structure with improved mechanical strength is provided. The high frequency device includes: a substrate having an aperture; a first dielectric layer that is formed from a material having etching selectivity in relation to a material of the substrate and is provided on the substrate to cover the aperture; a second dielectric layer on the first dielectric layer; and a high frequency element provided in a position opposed to the aperture on the second dielectric layer.

    摘要翻译： 提供具有机械强度提高的膜结构的高频装置。 高频器件包括：具有孔径的衬底; 第一电介质层，其由具有相对于衬底的材料的蚀刻选择性的材料形成，并且设置在所述衬底上以覆盖所述孔; 第一电介质层上的第二电介质层; 以及设置在与第二电介质层上的孔相对的位置的高频元件。

    Process for fabricating micromachine
    8.
    发明授权
    Process for fabricating micromachine 有权
    微机械制造工艺

    公开(公告)号：US08268660B2

    公开(公告)日：2012-09-18

    申请号：US10551271

    申请日：2004-04-02

    申请人： Masahiro Tada ,  Takashi Kinoshita ,  Masahiro Tanaka ,  Masanari Yamaguchi ,  Shun Mitarai ,  Koji Naniwada

    发明人： Masahiro Tada ,  Takashi Kinoshita ,  Masahiro Tanaka ,  Masanari Yamaguchi ,  Shun Mitarai ,  Koji Naniwada

    IPC分类号： H01L21/00

    CPC分类号： H03H3/0072 ,  B81B7/0012

    摘要： A method for manufacturing a micromachine is provided which can remove a sacrifice layer and can perform sealing without using a specific packaging technique. In a method for manufacturing a micromachine (1) including an oscillator (4), a step of forming a sacrifice layer around a movable portion of the oscillator (4); a step of covering a sacrifice layer with an overcoat film (8), followed by the formation of a penetrating hole (10) reaching the sacrifice layer in the overcoat layer (8); a step of performing sacrifice-layer etching for removing the sacrifice layer using the penetrating hole (10) in order to form a space around the movable portion; and a step of performing a film-formation treatment at a reduced pressure following the sacrifice-layer etching so as to seal the penetrating hole (10).

    摘要翻译： 提供了一种制造微机械的方法，其可以去除牺牲层并且可以在不使用特定包装技术的情况下进行密封。 在制造包括振荡器（4）的显微机械（1）的方法中，在振荡器（4）的可移动部分周围形成牺牲层的步骤; 用覆盖膜（8）覆盖牺牲层的步骤，然后形成到达覆盖层（8）中的牺牲层的穿透孔（10）; 使用所述贯通孔（10）进行牺牲层蚀刻去除所述牺牲层以在所述可动部分周围形成空间的步骤; 以及在牺牲层蚀刻之后在减压下进行成膜处理以密封穿透孔（10）的步骤。

    Micro-resonator, band-pass filter, semiconductor device and communication apparatus
    9.
    发明授权
    Micro-resonator, band-pass filter, semiconductor device and communication apparatus 有权
    微谐振器，带通滤波器，半导体器件和通信设备

    公开(公告)号：US07420439B2

    公开(公告)日：2008-09-02

    申请号：US11344842

    申请日：2006-01-31

    申请人： Shinya Morita ,  Takashi Kinoshita ,  Shun Mitarai

    发明人： Shinya Morita ,  Takashi Kinoshita ,  Shun Mitarai

    IPC分类号： H03H9/00

    CPC分类号： H03H9/2463 ,  H03H3/0077

    摘要： A micro-resonator of a single structure which outputs signals of two resonance frequencies of mutually opposite phases and in which different resonance frequencies are adjusted independently is provided. The micro-resonator includes: an oscillation portion 6 sustained with a gap by support portions 8 [8A, 8B] and an input electrode 3 and an output electrode 4 that become lower electrodes facing the oscillation portion 6 across the gap, in which the input electrode 3 and the output electrode 4 are disposed to face each other along a line intersecting the oscillation portion 6, the oscillation portion 6 generates torsional oscillation and flexural oscillation, and output signals of two resonance frequencies close to each other based on different resonance modes have mutually different phases by 180°.

    摘要翻译： 提供了输出相互相反的两个谐振频率的信号并且独立地调节不同谐振频率的单个结构的微谐振器。 微型谐振器包括：通过支撑部分8 [8A，8B]和输入电极3和输出电极4之间的间隙维持的振荡部分6，其成为跨越间隙面对振荡部分6的下电极，其中 输入电极3和输出电极4沿着与振荡部分6相交的线相对地配置，振荡部分6产生扭转振动和弯曲振荡，并且基于不同的谐振使彼此接近的两个谐振频率的输出信号 模式具有相互不同的相位180°。