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公开(公告)号：US6159868A
公开(公告)日：2000-12-12
申请号：US239796
申请日：1999-01-29
IPC分类号： H01L21/8247 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/64
CPC分类号： H01L21/02197 , H01L21/022 , H01L21/02271 , H01L21/02356 , H01L21/31691
摘要： A method of manufacturing a semiconductor device characterized by a method of forming a thin insulating film mainly composed of barium strontium titanate, the method having a first step for forming, on a semiconductor substrate, a thin BST film by a CVD method, and a second step for performing annealing at a temperature higher than a temperature at the thin BST films is formed so that crystallinity of the thin BST films is improved, wherein the temperature of the semiconductor substrate is maintained at a temperature higher than 250.degree. C. in a period of time between the first step and the second step in order to prevent a deterioration in a quality of the thin BST film.
摘要翻译： 一种制造半导体器件的方法，其特征在于，形成主要由钛酸钡锶组成的薄绝缘膜的方法，所述方法具有通过CVD方法在半导体衬底上形成薄BST膜的第一步骤，以及第二步骤 形成在比BST薄的温度高的温度下进行退火的步骤，使得薄BST膜的结晶度提高，其中半导体衬底的温度在一段时间内保持在高于250℃的温度 的时间在第一步骤和第二步骤之间，以防止薄BST薄膜的质量下降。
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公开(公告)号：US06495054B1
公开(公告)日：2002-12-17
申请号：US09429074
申请日：1999-10-29
IPC分类号： C03C1500
CPC分类号： C23C16/4405
摘要： Presented is an etching method capable of easily etching an oxide containing an alkaline-earth metal. One method is to etch the oxide by using an etching gas containing a halogen gas except for fluorine, an interhalogen compound consisting of only a halogen element except for fluorine, or a halogen hydride consisting of a halogen element except for fluorine and hydrogen. Particularly chlorides, bromides, and iodides of alkaline-earth metals have relatively high vapor pressures, so a thin film containing an alkaline-earth metal can be etched by using chlorine gas, bromine gas, or iodine gas. When a halogen gas containing fluorine is used, damages to SiO2 portions used in a film formation apparatus are prevented by coating these SiO2 portions with a fluoride of an alkaline-earth metal.
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公开(公告)号：US06541813B1
公开(公告)日：2003-04-01
申请号：US09650746
申请日：2000-08-30
申请人： Shoko Niwa , Hiroshi Tomita , Kazuhiro Eguchi , Katsuhiko Hieda
发明人： Shoko Niwa , Hiroshi Tomita , Kazuhiro Eguchi , Katsuhiko Hieda
IPC分类号： H01L2976
CPC分类号： H01L21/31691 , H01L28/55
摘要： The capacitor related to the present invention has a lower electrode, a dielectric film provided on the lower electrode and made mainly of crystal containing at Ti, O and at least one element selected from the group consisting of Ba and Sr, and an upper electrode provided on the dielectric film, wherein the dielectric film includes a layer which contacts the upper electrode. In case the dielectric film which has a thickness of at least 5 nm and exhibits a first-order differential spectrum measured by means of Auger electron spectroscopy, and the in the first-order differential spectrum, a ratio A/B is at most 0.3, where A is the absolute value A of a difference between a third peak appearing near 420 eV and a fourth peak appearing at a higher energy level and near the third peak, and B is the absolute value B of a difference between a first peak appearing near 410 eV and a third peak appearing at a lower energy level and near the first level.
摘要翻译： 与本发明有关的电容器具有下电极，在下电极上设置的电介质膜，主要由含有Ti，O的晶体和从Ba和Sr组成的组中选出的至少一种元素制成，上电极 在电介质膜上，其中电介质膜包括与上电极接触的层。 在通过俄歇电子能谱法测量的具有至少5nm的厚度并显示一阶微分光谱的电介质膜和一阶微分光谱中，A / B比至多为0.3时， 其中A是在420eV附近出现的第三峰与出现在较高能级和接近第三峰的第四峰之间的差的绝对值A，B是出现在附近的第一峰之间的差的绝对值B 410 eV和第三个峰出现在较低的能级和接近第一级。
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公开(公告)号：US06278152B1
公开(公告)日：2001-08-21
申请号：US09105030
申请日：1998-06-25
IPC分类号： H01L2900
CPC分类号： H01L28/75 , H01L21/76877 , H01L27/10814 , H01L27/10852 , H01L28/55
摘要： A semiconductor device comprises a first lower capacitor electrode composed of a first conductive film, a second lower capacitor electrode composed of a second conductive film which covers at least the side face of the first lower capacitor electrode at its top face, a capacitor insulating film provided on the second lower capacitor electrode, and an upper capacitor electrode provided on the capacitor insulating film, wherein film stress in the first conductive film is lower than that in the second conductive film and the volume of the first conductive film is larger than that of the second conductive film. The above-described structure reduces leakage current in the capacitor.
摘要翻译： 半导体器件包括由第一导电膜构成的第一下电容器电极和由其顶面至少覆盖第一下电容电极的侧面的第二导电膜构成的第二下电容电极，设置有电容器绝缘膜 在第二低电容电极和第二导电膜上设置的上电容器电极，其中第一导电膜中的膜应力低于第二导电膜的膜应力，第一导电膜的体积大于第二导电膜的体积 第二导电膜。 上述结构减小了电容器中的漏电流。
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公开(公告)号：US06867451B2
公开(公告)日：2005-03-15
申请号：US09469190
申请日：1999-12-21
申请人： Katsuhiko Hieda , Kazuhiro Eguchi
发明人： Katsuhiko Hieda , Kazuhiro Eguchi
IPC分类号： H01L27/10 , H01L21/02 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94
CPC分类号： H01L28/55 , H01L27/10814 , H01L28/60
摘要： A semiconductor device comprises a lower electrode shaped as a convex formed on a semiconductor substrate having crystals, a grain boundary between adjacent crystals being perpendicular to a side of the lower electrode, a capacitor insulating film covering the lower electrode, and an upper electrode formed on the capacitor insulating film.
摘要翻译： 半导体器件包括形成在具有晶体的半导体衬底上形成的凸起的下电极，相邻晶体之间的晶界垂直于下电极的侧面，覆盖下电极的电容器绝缘膜和形成在 电容绝缘膜。
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公开(公告)号：US06335241B1
公开(公告)日：2002-01-01
申请号：US09369174
申请日：1999-08-05
IPC分类号： H01L218242
CPC分类号： H01L27/10855 , H01L27/10888 , H01L27/10894 , H01L28/91
摘要： A semiconductor device with a charge holding capacitor comprises a lower electrode connected via a plug to one of the source and drain of an MIS transistor, a capacitor insulating film formed the lower electrode, an upper electrode formed on the capacitor insulating film. The lower electrode includes a first constituting portion that is embedded in a hole in which the plug has been embedded and so formed that it self-aligns with the plug and a second constituting portion which is formed on the first constituting portion and on regions outside the fist constituting portion and whose cross section is larger than that of the first constituting portion. The first constituting portion and the second constituting portion are formed integrally by a continues film.
摘要翻译： 具有电荷保持电容器的半导体器件包括通过插头连接到MIS晶体管的源极和漏极之一的下电极，形成下电极的电容器绝缘膜，形成在电容器绝缘膜上的上电极。 下部电极包括第一构成部，该第一构成部嵌入在插入孔内并形成为与插头自对准的孔和形成在第一构成部上的第二构成部和第二构成部 第一构成部分的横截面大于第一构成部分的截面。 第一构成部分和第二构成部分由连续膜一体地形成。
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公开(公告)号：US5618761A
公开(公告)日：1997-04-08
申请号：US526387
申请日：1995-09-11
IPC分类号： H01L21/205 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10852 , H01L27/10861 , H01L28/55
摘要： Disclosed is a method of manufacturing a semiconductor device, comprising the step of forming a dielectric thin film on a semiconductor layer, the dielectric thin film being made of a compound represented by the general formula (1) given below:ABO.sub.3 (1)where "A" is at least one element selected from the group consisting of Ca, Ba, Sr, Pb and La, and "B" is at least one element selected from the group consisting of Zr and Ti,The dielectric thin film being formed by a chemical vapor deposition under a pressure of 400 Torr or less and a temperature of 1,000.degree. C. or less by using a raw material gas containing a complex compound of element A with a .beta.-diketone, a complex compound of element B with a .beta.-diketone, and an oxidizing agent.
摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体层上形成电介质薄膜的步骤，所述电介质薄膜由以下给出的通式（1）表示的化合物制成：ABO3（1）其中“ A“是选自Ca，Ba，Sr，Pb和La中的至少一种元素，”B“是选自Zr和Ti中的至少一种元素。电介质薄膜由 通过使用含有元素A的配位化合物与β-二酮的原料气体，元素B与β-二酮的络合物，在400Torr以下的压力和1000℃以下的温度下进行化学气相沉积， 二酮和氧化剂。
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公开(公告)号：US06326316B1
公开(公告)日：2001-12-04
申请号：US09562330
申请日：2000-05-01
IPC分类号： H01L2131
CPC分类号： H01L28/75 , H01L27/10852 , H01L28/55 , H01L28/91
摘要： Disclosed is a semiconductor device, comprising a semiconductor substrate, a cell transistor formed in the semiconductor substrate, an interlayer dielectric film in which is formed a contact hole communicating with a part of the cell transistor, a contact plug buried in the contact hole formed in the interlayer dielectric film, a capacitor lower electrode formed of a ruthenium/tantalum laminate film consisting of a tantalum film and a ruthenium film formed on the tantalum film, the lower electrode being formed on interlayer dielectric film and connected to the contact plug, a capacitor dielectric film formed on the ruthenium film included in the capacitor lower electrode and consisting of a metal oxide, and a capacitor upper electrode formed on the capacitor dielectric film, the ruthenium film exhibiting (00n) dominant orientation, where n denotes a positive integer.
摘要翻译： 公开了一种半导体器件，包括半导体衬底，形成在半导体衬底中的单元晶体管，层间绝缘膜，其中形成有与单元晶体管的一部分连通的接触孔;埋入在所述接触孔中的接触孔 层间电介质膜，由钽膜和形成在钽膜上的钌膜构成的钌/钽层叠膜形成的电容器下电极，下电极形成在层间绝缘膜上并连接到接触插塞，电容器 在电容器下电极上形成的由金属氧化物构成的钌膜上形成的电介质膜和形成在电容器电介质膜上的电容器上电极，显示（00n）显着取向的钌膜，其中n表示正整数。
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公开(公告)号：US6091099A
公开(公告)日：2000-07-18
申请号：US969702
申请日：1997-11-13
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/92 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/75 , H01L27/10852 , H01L28/55 , H01L28/91
摘要： Disclosed is a semiconductor device, comprising a semiconductor substrate, a cell transistor formed in the semiconductor substrate, an interlayer dielectric film in which is formed a contact hole communicating with a part of the cell transistor, a contact plug buried in the contact hole formed in the interlayer dielectric film, a capacitor lower electrode formed of a ruthenium/tantalum laminate film consisting of a tantalum film and a ruthenium film formed on the tantalum film, the lower electrode being formed on interlayer dielectric film and connected to the contact plug, a capacitor dielectric film formed on the ruthenium film included in the capacitor lower electrode and consisting of a metal oxide, and a capacitor upper electrode formed on the capacitor dielectric film, the ruthenium film exhibiting (00n) dominant orientation, where n denotes a positive integer.
摘要翻译： 公开了一种半导体器件，包括半导体衬底，形成在半导体衬底中的单元晶体管，层间绝缘膜，其中形成有与单元晶体管的一部分连通的接触孔;埋入在所述接触孔中的接触孔 层间电介质膜，由钽膜和形成在钽膜上的钌膜构成的钌/钽层叠膜形成的电容器下电极，下电极形成在层间绝缘膜上并连接到接触插塞，电容器 在电容器下电极上形成的由金属氧化物构成的钌膜上形成的电介质膜和形成在电容器电介质膜上的电容器上电极，显示（00n）显着取向的钌膜，其中n表示正整数。
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公开(公告)号：US06599794B2
公开(公告)日：2003-07-29
申请号：US10195484
申请日：2002-07-16
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L27/10817 , H01L27/11507 , H01L28/91
摘要： A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.
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