公开(公告)号：US07558307B2

公开(公告)日：2009-07-07

申请号：US11058618

申请日：2005-02-16

申请人： Katsuhiko Kishimoto ,  Yoshie Fujishiro

发明人： Katsuhiko Kishimoto ,  Yoshie Fujishiro

IPC分类号： H01S5/00

CPC分类号： G11B7/127 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/181 ,  H01S5/0206 ,  H01S5/02228 ,  H01S5/02248 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3072 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： In a semiconductor laser device, a p-side electrode (114) of a multilayer structure put in contact with the surface of a ridge portion (130) of a second conductive type semiconductor layer group (p-AlGaAs first upper cladding layer (108), p-AlGaAs second upper cladding layer (109), p-GaAs etching stop layer (110), p-AlGaAs third upper cladding layer (111), p-GaAs contact layer (112) and p+-GaAs contact layer (113)) is formed. The p-side electrode (114) has one or a plurality of high refractive index layers and low refractive index layers formed successively from the side put in contact with the surface of the semiconductor layer group of the second conductive type. The high refractive index layers have a refractive index of not lower than 2.5 with respect to the wavelength band of the emission laser light and a total thickness of not greater than 75 nm, while the low refractive index layers have a refractive index of not higher than 1.0 with respect to the wavelength band of the emission laser light.

摘要翻译： 在半导体激光装置中，与第二导电型半导体层组（p-AlGaAs第一上部包层（108））的脊部（130）的表面接触的多层结构的p侧电极（114） ，p-AlGaAs第二上覆层（109），p-GaAs蚀刻停止层（110），p-AlGaAs第三上覆层（111），p-GaAs接触层（112）和p + -GaAs接触层（113） ） 形成了。 p侧电极（114）具有从与第二导电类型的半导体层组的表面接触的一侧连续形成的一个或多个高折射率层和低折射率层。 高折射率层相对于发光激光的波长带的折射率不低于2.5，总厚度不大于75nm，而低折射率层的折射率不高于 1.0相对于发射激光的波长带。

公开(公告)号：US20050213628A1

公开(公告)日：2005-09-29

申请号：US11058618

申请日：2005-02-16

申请人： Katsuhiko Kishimoto ,  Yoshie Fujishiro

发明人： Katsuhiko Kishimoto ,  Yoshie Fujishiro

IPC分类号： G11B7/125 ,  H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/042 ,  H01S5/22 ,  H01S5/30

CPC分类号： G11B7/127 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/181 ,  H01S5/0206 ,  H01S5/02228 ,  H01S5/02248 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3072 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： In a semiconductor laser device, a p-side electrode (114) of a multilayer structure put in contact with the surface of a ridge portion (130) of a second conductive type semiconductor layer group (p-AlGaAs first upper cladding layer (108), p-AlGaAs second upper cladding layer (109), p-GaAs etching stop layer (110), p-AlGaAs third upper cladding layer (111), p-GaAs contact layer (112) and p+-GaAs contact layer (113)) is formed. The p-side electrode (114) has one or a plurality of high refractive index layers and low refractive index layers formed successively from the side put in contact with the surface of the semiconductor layer group of the second conductive type. The high refractive index layers have a refractive index of not lower than 2.5 with respect to the wavelength band of the emission laser light and a total thickness of not greater than 75 nm, while the low refractive index layers have a refractive index of not higher than 1.0 with respect to the wavelength band of the emission laser light.

摘要翻译： 在半导体激光装置中，与第二导电型半导体层组（p-AlGaAs第一上部包层（108））的脊部（130）的表面接触的多层结构的p侧电极（114） ，p-AlGaAs第二上覆层（109），p-GaAs蚀刻停止层（110），p-AlGaAs第三上覆层（111），p-GaAs接触层（112）和p + > -GaAs接触层（113））。 p侧电极（114）具有从与第二导电类型的半导体层组的表面接触的一侧连续形成的一个或多个高折射率层和低折射率层。 高折射率层相对于发光激光的波长带的折射率不低于2.5，总厚度不大于75nm，而低折射率层的折射率不高于 1.0相对于发射激光的波长带。

公开(公告)号：US07197056B2

公开(公告)日：2007-03-27

申请号：US10494946

申请日：2002-11-13

申请人： Yoshie Fujishiro ,  Ken Ohbayashi ,  Kei Yamamoto

发明人： Yoshie Fujishiro ,  Ken Ohbayashi ,  Kei Yamamoto

IPC分类号： H01S5/34 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/3434 ,  H01S5/34373 ,  H01S2301/00 ,  H01S2302/00

摘要： A 780 nm band semiconductor laser device has an InGaAsP well layer, phosphorous composition of which is 0.51 smaller than 0.55 to prevent spinodal decomposition in growing InGaAsP. A compressive strain of 0.65% less than 1% and more than 0.25% is introduced into the well layer to reduce threshold current thereof. Thus, the 0.78-μm band semiconductor laser device having the InGaAsP well layer stably operates for a long time even in outputting a high optical power of 100 mW or more. A tensile strain of 1.2% is also introduced into barrier layers within the active region so as to compensate the stress due to the compressive strain of the well layer. As a result, the reliability of the semiconductor laser device is further increased during a high output operation.

摘要翻译： 780nm波段半导体激光器件具有InGaAsP阱层，其磷组合物为小于0.55的0.51以防止生长的InGaAsP中的亚稳态分解。 向阱层中引入小于1％且大于0.25％的0.65％的压缩应变以降低其阈值电流。 因此，即使在输出100mW以上的高光功率的情况下，具有InGaAsP阱层的0.78-微波带半导体激光器件也能够长时间稳定地工作。 1.2％的拉伸应变也被引入有源区域内的阻挡层，以补偿由于阱层的压缩应变引起的应力。 结果，在高输出操作期间，半导体激光器件的可靠性进一步提高。

公开(公告)号：US08085826B2

公开(公告)日：2011-12-27

申请号：US12591178

申请日：2009-11-12

申请人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

发明人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01S5/2004 ,  H01S5/3216 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

摘要翻译： 氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN层 以及在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其特征在于，所述n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8〜2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。

公开(公告)号：US06885085B2

公开(公告)日：2005-04-26

申请号：US10351609

申请日：2003-01-27

申请人： Hidenori Kawanishi ,  Kei Yamamoto ,  Fumihiro Konushi ,  Yoshie Fujishiro ,  Toshihiko Yoshida

发明人： Hidenori Kawanishi ,  Kei Yamamoto ,  Fumihiro Konushi ,  Yoshie Fujishiro ,  Toshihiko Yoshida

IPC分类号： H01S5/22 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343 ,  H01L23/552

CPC分类号： B82Y20/00 ,  H01S5/2206 ,  H01S5/3403 ,  H01S5/3434 ,  H01S5/34373 ,  H01S5/34386

摘要： A semiconductor laser device has an n-type AlGaAs first cladding layer 2, a multiple quantum well active layer 3, and a p-type AlGaAs second cladding layer 4 formed in this order and supported by an n-type GaAs substrate 1. The multiple quantum well active layer 3 has two quantum well layers 3a and barrier layers 3b provided on both sides of each quantum well layer 3a. The quantum well layers 3a are each made of In1-v1Gav1As1-w1Pw1, while the barrier layers 3b are each made of In1-v2Gav2As1-w2Pw2. Here, v1 and v2 satisfy v1

摘要翻译： 半导体激光器件具有依次形成并由n型GaAs衬底1支撑的n型AlGaAs第一覆层2，多量子阱有源层3和p型AlGaAs第二覆层4。 量子阱活性层3具有设置在每个量子阱层3a两侧的两个量子阱层3a和势垒层3b。 量子阱层3a分别由In 1-v1＆lt; 1＆lt; 1＆lt; 1＆lt; 1＆lt; 1＆gt; ，而阻挡层3b分别由In 1-v2＆lt; 2＆gt;＆lt; 1＆gt; 1-w2＆lt; W 2＆lt; >。 这里，v 1和v 2满足v 1

公开(公告)号：US20120063986A1

公开(公告)日：2012-03-15

申请号：US13302266

申请日：2011-11-22

申请人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

发明人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

IPC分类号： C01B21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01S5/2004 ,  H01S5/3216 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

摘要翻译： 氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN 层和在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其中n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8-2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。

公开(公告)号：US20050041708A1

公开(公告)日：2005-02-24

申请号：US10494946

申请日：2002-11-13

申请人： Yoshie Fujishiro ,  Ken Ohbayashi ,  Kei Yamamoto

发明人： Yoshie Fujishiro ,  Ken Ohbayashi ,  Kei Yamamoto

IPC分类号： H01S5/223 ,  H01S5/343 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/3434 ,  H01S5/34373 ,  H01S2301/00 ,  H01S2302/00

摘要： A 780 nm band semiconductor laser device has an InGaAsP well layer, phosphorous composition of which is 0.51 smaller than 0.55 to prevent spinodal decomposition in growing InGaAsP. A compressive strain of 0.65% less than 1% and more than 0.25% is introduced into the well layer to reduce threshold current thereof. Thus, the 0.78-μm band semiconductor laser device having the InGaAsP well layer stably operates for a long time even in outputting a high optical power of 100 mW or more. A tensile strain of 1.2% is also introduced into barrier layers within the active region so as to compensate the stress due to the compressive strain of the well layer. As a result, the reliability of the semiconductor laser device is further increased during a high output operation.

摘要翻译： 780nm波段半导体激光器件具有InGaAsP阱层，其磷组合物为小于0.55的0.51以防止生长的InGaAsP中的亚稳态分解。 向阱层中引入小于1％且大于0.25％的0.65％的压缩应变以降低其阈值电流。 因此，即使在输出100mW以上的高光功率的情况下，具有InGaAsP阱层的0.78-微波带半导体激光器件也能够长时间稳定地工作。 1.2％的拉伸应变也被引入有源区域内的阻挡层，以补偿由于阱层的压缩应变引起的应力。 结果，在高输出操作期间，半导体激光器件的可靠性进一步提高。

公开(公告)号：US08311070B2

公开(公告)日：2012-11-13

申请号：US13302266

申请日：2011-11-22

申请人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

发明人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01S5/2004 ,  H01S5/3216 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

摘要翻译： 氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN 层和在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其中n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8-2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。

公开(公告)号：US20100142577A1

公开(公告)日：2010-06-10

申请号：US12591178

申请日：2009-11-12

申请人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

发明人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

IPC分类号： H01S5/34 ,  C30B25/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01S5/2004 ,  H01S5/3216 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

摘要翻译： 氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN层 以及在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其特征在于，所述n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8〜2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。

公开(公告)号：US06813299B2

公开(公告)日：2004-11-02

申请号：US10341246

申请日：2003-01-14

申请人： Hidenori Kawanishi ,  Yoshie Fujishiro ,  Shuichi Hirukawa

发明人： Hidenori Kawanishi ,  Yoshie Fujishiro ,  Shuichi Hirukawa

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/3403 ,  H01S5/3434 ,  H01S5/34373 ,  H01S5/34386

摘要： There is provided a semiconductor laser device, which has an oscillation wavelength that is greater than 760 nm and smaller than 800 nm, high reliability, long operating life and a high output, and an optical disk reproducing and recording apparatus that employs the semiconductor laser device. At least first and second lower clad layers 103 and 133, a quantum well active layer 105 constructed of well layers and barrier layers, first and second upper clad layers 107 and 109 are laminated on a GaAs substrate 101. The well layer is made of InGaAsP. The well layer has a great layer thickness d of 160 Å, and assuming that an optical confinement coefficient in one layer of the well layer is &Ggr;, then &Ggr;/d is set at a great value of 2.2×10−4 Å−1.

摘要翻译： 提供了具有大于760nm且小于800nm的振荡波长，高可靠性，长使用寿命和高输出的半导体激光装置，以及采用半导体激光装置的光盘再现和记录装置 。 至少第一和第二下包层103和133，由阱层和阻挡层构成的量子阱有源层105，第一和第二上包层107和109层压在GaAs衬底101上。阱层由InGaAsP 。 阱层具有大的层厚度d，并且假设阱层的一层中的光限制系数是伽马，则伽马/ d设定为2.2×10 -4的极大值， 1>。