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    Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system
    1.
    发明授权
    Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system 有权
    半导体激光器件，半导体激光器件制造方法，光盘装置和光传输系统

    公开(公告)号：US07558307B2

    公开(公告)日：2009-07-07

    申请号：US11058618

    申请日：2005-02-16

    申请人： Katsuhiko Kishimoto ,  Yoshie Fujishiro

    发明人： Katsuhiko Kishimoto ,  Yoshie Fujishiro

    IPC分类号： H01S5/00

    CPC分类号： G11B7/127 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/181 ,  H01S5/0206 ,  H01S5/02228 ,  H01S5/02248 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3072 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

    摘要： In a semiconductor laser device, a p-side electrode (114) of a multilayer structure put in contact with the surface of a ridge portion (130) of a second conductive type semiconductor layer group (p-AlGaAs first upper cladding layer (108), p-AlGaAs second upper cladding layer (109), p-GaAs etching stop layer (110), p-AlGaAs third upper cladding layer (111), p-GaAs contact layer (112) and p+-GaAs contact layer (113)) is formed. The p-side electrode (114) has one or a plurality of high refractive index layers and low refractive index layers formed successively from the side put in contact with the surface of the semiconductor layer group of the second conductive type. The high refractive index layers have a refractive index of not lower than 2.5 with respect to the wavelength band of the emission laser light and a total thickness of not greater than 75 nm, while the low refractive index layers have a refractive index of not higher than 1.0 with respect to the wavelength band of the emission laser light.

    摘要翻译： 在半导体激光装置中，与第二导电型半导体层组（p-AlGaAs第一上部包层（108））的脊部（130）的表面接触的多层结构的p侧电极（114） ，p-AlGaAs第二上覆层（109），p-GaAs蚀刻停止层（110），p-AlGaAs第三上覆层（111），p-GaAs接触层（112）和p + -GaAs接触层（113） ） 形成了。 p侧电极（114）具有从与第二导电类型的半导体层组的表面接触的一侧连续形成的一个或多个高折射率层和低折射率层。 高折射率层相对于发光激光的波长带的折射率不低于2.5，总厚度不大于75nm，而低折射率层的折射率不高于 1.0相对于发射激光的波长带。

    Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system
    2.
    发明申请
    Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system 有权
    半导体激光器件，半导体激光器件制造方法，光盘装置和光传输系统

    公开(公告)号：US20050213628A1

    公开(公告)日：2005-09-29

    申请号：US11058618

    申请日：2005-02-16

    申请人： Katsuhiko Kishimoto ,  Yoshie Fujishiro

    发明人： Katsuhiko Kishimoto ,  Yoshie Fujishiro

    IPC分类号： G11B7/125 ,  H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/042 ,  H01S5/22 ,  H01S5/30

    CPC分类号： G11B7/127 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/181 ,  H01S5/0206 ,  H01S5/02228 ,  H01S5/02248 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3072 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

    摘要： In a semiconductor laser device, a p-side electrode (114) of a multilayer structure put in contact with the surface of a ridge portion (130) of a second conductive type semiconductor layer group (p-AlGaAs first upper cladding layer (108), p-AlGaAs second upper cladding layer (109), p-GaAs etching stop layer (110), p-AlGaAs third upper cladding layer (111), p-GaAs contact layer (112) and p+-GaAs contact layer (113)) is formed. The p-side electrode (114) has one or a plurality of high refractive index layers and low refractive index layers formed successively from the side put in contact with the surface of the semiconductor layer group of the second conductive type. The high refractive index layers have a refractive index of not lower than 2.5 with respect to the wavelength band of the emission laser light and a total thickness of not greater than 75 nm, while the low refractive index layers have a refractive index of not higher than 1.0 with respect to the wavelength band of the emission laser light.

    摘要翻译： 在半导体激光装置中，与第二导电型半导体层组（p-AlGaAs第一上部包层（108））的脊部（130）的表面接触的多层结构的p侧电极（114） ，p-AlGaAs第二上覆层（109），p-GaAs蚀刻停止层（110），p-AlGaAs第三上覆层（111），p-GaAs接触层（112）和p + > -GaAs接触层（113））。 p侧电极（114）具有从与第二导电类型的半导体层组的表面接触的一侧连续形成的一个或多个高折射率层和低折射率层。 高折射率层相对于发光激光的波长带的折射率不低于2.5，总厚度不大于75nm，而低折射率层的折射率不高于 1.0相对于发射激光的波长带。

    Lamp comprising a phosphor, radiation source, optical system and heatsink
    5.
    发明授权
    Lamp comprising a phosphor, radiation source, optical system and heatsink 有权
    灯包括磷光体，辐射源，光学系统和散热器

    公开(公告)号：US08919977B2

    公开(公告)日：2014-12-30

    申请号：US13577277

    申请日：2011-02-09

    申请人： David James Montgomery ,  James Rowland Suckling ,  Katsuhiko Kishimoto

    发明人： David James Montgomery ,  James Rowland Suckling ,  Katsuhiko Kishimoto

    IPC分类号： F21V29/00 ,  F21K99/00 ,  F21S8/10 ,  G03B21/20 ,  F21Y101/02

    CPC分类号： F21S41/321 ,  F21K9/61 ,  F21K9/64 ,  F21S41/155 ,  F21S41/16 ,  F21S45/47 ,  F21V29/70 ,  F21Y2115/10 ,  F21Y2115/30 ,  G03B21/204

    摘要： A lamp comprises a thin layer of phosphor (105,113) which is irradiated (46), for example by ultraviolet radiation, by a source which typically comprises a laser diode and a condenser (101,111). This causes the phosphor (105,113) to emit visible light with a Lambertion-type emission pattern. An optical system such as a reflector (102,115) concentrates the light from the phosphor (105,113). The phosphor (105,113) is thermally connected to a heatsink (103,116), of example by a plate (114) of sapphire glass, so as to dissipate the heat produced by the phosphor (105,113). The phosphor (105) may be mounted on a plane reflector (104) disposed on or comprising the heatsink (103) and facing a curved reflector (102) and the radiation source. Alternatively, the optical system may have an optical axis and the phosphor (113) may be substantially flat and inclined with the respect to the optical axis.

    摘要翻译： 灯包括由通常包括激光二极管和冷凝器（101,111）的源照射（46）例如紫外线辐射的薄层的磷光体（105,113）。 这使得荧光体（105,113）以Lambertion型发射图案发射可见光。 诸如反射器（102,115）的光学系统集中来自磷光体（105,113）的光。 荧光体（105,113）例如由蓝宝石玻璃板（114）热连接到散热片（103,116），以散发由荧光体（105,113）产生的热量。 荧光体（105）可以安装在设置在散热器（103）上或包括散热器（103）并且面向弯曲反射器（102）和辐射源的平面反射器（104）上。 或者，光学系统可以具有光轴，并且磷光体（113）可以基本上平坦并且相对于光轴倾斜。

    Vehicle headlamp and illuminating device
    6.
    发明授权
    Vehicle headlamp and illuminating device 有权

    公开(公告)号：US08536774B2

    公开(公告)日：2013-09-17

    申请号：US12957998

    申请日：2010-12-01

    申请人： Katsuhiko Kishimoto ,  Hidenori Kawanishi

    发明人： Katsuhiko Kishimoto ,  Hidenori Kawanishi

    IPC分类号： H01J1/62 ,  F21V9/16 ,  B60Q1/00

    摘要： A headlamp 1 includes a laser diode 3 that emits a laser beam, a light emitting part 7 that emits light upon receiving the laser beam emitted from the laser diode 3, and a reflection mirror 8 that reflects the light emitted from the light emitting part 7. According to the headlamp 1, the light emitting part 7 has a luminance greater than 25 cd/mm2, and an area size of an aperture plane 8a perpendicular to a direction in which an incoherent light travels outward from the headlamp 1 is less than 2000 mm2.

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    7.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
    半导体器件制造方法

    公开(公告)号：US20090275160A1

    公开(公告)日：2009-11-05

    申请号：US12500442

    申请日：2009-07-09

    申请人： Shuichi HIRUKAWA ,  Katsuhiko Kishimoto

    发明人： Shuichi HIRUKAWA ,  Katsuhiko Kishimoto

    IPC分类号： H01L21/20

    CPC分类号： H01L25/167 ,  B82Y20/00 ,  H01L2924/0002 ,  H01S5/0425 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/22 ,  H01S5/34313 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： After a p-type cladding layer, an etching rate reducing layer and a p-type contact layer are formed in order on an n-type substrate, an etching mask is formed. Then, by using the etching mask, the p-type contact layer, the etching rate reducing layer and the p-type cladding layer are partially etched in the region outside the etching mask with an etchant. At this time, the etching rate of the layers by the etchant is slower in the etching rate reducing layer than in the p-type cladding layer and the p-type contact layer. Then, a metal thin film is formed such that the film continuously coats an upper surface and side surfaces of a ridge consisting of the above layers left after the etching step. A normal vector at a surface coated with the thin film has an upward component.

    摘要翻译： 在p型覆层之后，在n型衬底上依次形成蚀刻速率降低层和p型接触层，形成蚀刻掩模。 然后，通过使用蚀刻掩模，用蚀刻剂在蚀刻掩模外部的区域中部分蚀刻p型接触层，蚀刻速率降低层和p型覆层。 此时，蚀刻速率降低层的蚀刻剂的层的蚀刻速度比p型覆层和p型接触层的蚀刻速度慢。 然后，形成金属薄膜，使得膜在连续地涂覆在蚀刻步骤之后留下的上述层的脊的上表面和侧表面。 在涂有薄膜的表面上的法线矢量具有向上的分量。

    Semiconductor laser device and optical disc unit
    8.
    发明授权
    Semiconductor laser device and optical disc unit 失效
    半导体激光器件和光盘单元

    公开(公告)号：US07123641B2

    公开(公告)日：2006-10-17

    申请号：US10788411

    申请日：2004-03-01

    申请人： Shuichi Hirukawa ,  Hidenori Kawanishi ,  Katsuhiko Kishimoto

    发明人： Shuichi Hirukawa ,  Hidenori Kawanishi ,  Katsuhiko Kishimoto

    IPC分类号： H01S5/323

    CPC分类号： B82Y20/00 ,  H01S5/2206 ,  H01S5/2223 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3406 ,  H01S5/3434 ,  H01S5/34373

    摘要： In a semiconductor laser device having an oscillation wavelength of larger than 760 nm and smaller than 800 nm, on an n-type GaAs substrate (101), there are stacked in sequence an n-type first and second lower cladding layers (103, 104), a lower guide layer (106), a strained InGaAsP multiquantum well active layer (107), an upper guide layer (109), and a p-type upper cladding layer (110). Since the lower guide layer (106) is formed of InGaP, leakage of carriers from an active region is reduced. Also, since the upper guide layer (109) is formed of AlGaAs, an overflow of carriers (electrons in particular) is suppressed.

    摘要翻译： 在具有大于760nm且小于800nm的振荡波长的半导体激光器件中，在n型GaAs衬底（101）上依次堆叠n型第一和第二下覆层（103,104 ），下引导层（106），应变InGaAsP多量阱有源层（107），上引导层（109）和p型上覆层（110）。 由于下引导层（106）由InGaP形成，因此载流子从有源区域泄漏减少。 此外，由于上引导层（109）由AlGaAs形成，因此抑制载流子（特别是电子）的溢出。

    Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system
    9.
    发明申请
    Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system 失效
    半导体激光器件，半导体激光器件制造方法，光盘装置和光传输系统

    公开(公告)号：US20060067374A1

    公开(公告)日：2006-03-30

    申请号：US11210792

    申请日：2005-08-25

    申请人： Katsuhiko Kishimoto

    发明人： Katsuhiko Kishimoto

    IPC分类号： H01S5/00

    CPC分类号： H01S5/22 ,  H01S5/0425 ,  H01S5/222 ,  H01S5/2222

    摘要： In the semiconductor laser device of the present invention, a p-side electrode 115 formed on a second conductive type semiconductor layer group of the layers 108 through 114 includes an Ag layer 115a, a Pd layer 115b and an Au layer 115c in order from the side in contact with the second conductive type semiconductor layer group of the layers 108 through 114. The refractive index of the Ag layer 115a is sufficiently smaller than the refractive index of the semiconductor material used for the semiconductor layer group of the layers 108 through 114. Therefore, the oscillation laser light can be confined in the semiconductor layer group of the layers 108 through 114 without leaking toward the p-side electrode 115.

    摘要翻译： 在本发明的半导体激光器件中，形成在层108至114的第二导电类型半导体层组上的p侧电极115包括Ag层115a，Pd层115b和Au层115c， 从与层108至114的第二导电类型半导体层组接触的一侧的顺序。 Ag层115a的折射率足够小于用于层108至114的半导体层组的半导体材料的折射率。 因此，振荡激光可以限制在层108到114的半导体层组中，而不会向p侧电极115泄漏。