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1.
公开(公告)号:US4203799A
公开(公告)日:1980-05-20
申请号:US902033
申请日:1978-05-02
CPC分类号: G01B11/0675 , C30B25/16 , H01L21/00
摘要: In growing on a substrate a film of substance of a similar kind to the substrate, ions are implanted into the substrate to form within the substrate a layer of substance having an optical property different from that of the substrate, and an epitaxial film is then grown. Thus, the thickness of the film can be monitored with an interference waveform appearing with its growth.
摘要翻译: 在衬底上生长类似于衬底的物质膜,将离子注入到衬底中以在衬底内形成具有不同于衬底的光学性质的物质层,然后生长外延膜 。 因此,可以以其生长出现的干涉波形来监测膜的厚度。
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公开(公告)号:US4000507A
公开(公告)日:1976-12-28
申请号:US542301
申请日:1975-01-20
申请人: Sumio Nishida , Katsuro Sugawara , Eiichi Yamada , Satoru Ito , Kohei Yamada
发明人: Sumio Nishida , Katsuro Sugawara , Eiichi Yamada , Satoru Ito , Kohei Yamada
IPC分类号: H01L29/40 , H01L21/331 , H01L23/31 , H01L23/485 , H01L23/58 , H01L23/60 , H01L29/06 , H01L29/73 , H01L29/861 , H01L29/34 , H01L23/48
CPC分类号: H01L29/402 , H01L23/3171 , H01L23/485 , H01L23/585 , H01L23/60 , H01L2924/0002
摘要: In a semiconductor device wherein an insulating film is provided on that surface of a semiconductor substrate to which a base-collector junction extends, two annular electrodes are formed with the junction formed therebetween. One of the electrodes is maintained at base potential, while the other electrode is maintained at collector potential. Thus, moisture or like contaminants adhering to the insulating film are prevented from leading to the generation of excessive channel current.
摘要翻译: 在半导体器件中,在集电极结延伸的半导体衬底的表面上设置绝缘膜,形成两个环形电极,其间形成有结。 其中一个电极保持在基极电位,而另一个电极保持在集电极电位。 因此,防止粘附到绝缘膜上的水分或类似污染物导致过大的通道电流的产生。
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公开(公告)号:US4067099A
公开(公告)日:1978-01-10
申请号:US719239
申请日:1976-08-31
申请人: Satoru Ito , Masataka Ota , Katsuro Sugawara
发明人: Satoru Ito , Masataka Ota , Katsuro Sugawara
IPC分类号: C23C14/34 , H01L21/283 , H01L21/31 , H01L21/316 , H01L21/56 , H01L21/60 , H01L23/485 , H01L23/58 , H01L21/203
CPC分类号: H01L24/48 , H01L21/02164 , H01L21/02266 , H01L21/02304 , H01L21/31612 , H01L21/56 , H01L23/585 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/13099 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/48624 , H01L24/45 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01079 , H01L2924/10253 , H01L2924/12036 , H01L2924/13091 , H01L2924/14 , H01L2924/3025 , Y10S438/958
摘要: A method of forming a passivation film, wherein after circuit elements have been formed in the semiconductor substrate, a thin conductive film is formed on the entire surface of the substrate and then an insulating film is formed through electric discharge on the surface of the thin conductive film while the thin conductive film is kept at a constant potential.
摘要翻译: 一种形成钝化膜的方法,其中在半导体衬底中形成电路元件之后,在衬底的整个表面上形成薄导电膜,然后通过在薄导体表面上的放电形成绝缘膜 同时薄导电膜保持在恒定电位。
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