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    SEMICONDUCTOR OPTICAL ELEMENT
    1.
    发明申请
    SEMICONDUCTOR OPTICAL ELEMENT 有权
    半导体光学元件

    公开(公告)号：US20150055669A1

    公开(公告)日：2015-02-26

    申请号：US14376662

    申请日：2012-08-02

    申请人： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    发明人： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    IPC分类号： H01S5/32

    CPC分类号： H01S5/3223 ,  H01L33/34 ,  H01L33/38 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/2272

    摘要： To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.

    摘要翻译： 为了提供一种发光元件，其中电子被有效地注入到Ge发光层中并且可以有效地发射光，发光元件具有形成在绝缘膜2上的阻挡层3，该阻挡层3以 量子限制效应表现为单晶Si，分别设置在阻挡层3的两端的p型扩散层电极5和n型扩散层电极6以及设置在势垒层3上的单晶Ge发光部13 在电极5,6之间流动的电流的至少一部分在阻挡层3中相对于基板1在水平方向上流动。

    Semiconductor optical element
    2.
    发明授权
    Semiconductor optical element 有权
    半导体光学元件

    公开(公告)号：US09041080B2

    公开(公告)日：2015-05-26

    申请号：US14376662

    申请日：2012-08-02

    申请人： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    发明人： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    IPC分类号： H01L29/00 ,  H01S5/32

    CPC分类号： H01S5/3223 ,  H01L33/34 ,  H01L33/38 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/2272

    摘要： To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.

    摘要翻译： 为了提供一种发光元件，其中电子被有效地注入到Ge发光层中并且可以有效地发射光，发光元件具有形成在绝缘膜2上的阻挡层3，该阻挡层3以 量子限制效应表现为单晶Si，分别设置在阻挡层3的两端的p型扩散层电极5和n型扩散层电极6以及设置在势垒层3上的单晶Ge发光部13 在电极5,6之间流动的电流的至少一部分在阻挡层3中相对于基板1在水平方向上流动。

    SEMICONDUCTOR OPTICAL ELEMENT
    3.
    发明申请
    SEMICONDUCTOR OPTICAL ELEMENT 有权
    半导体光学元件

    公开(公告)号：US20140355636A1

    公开(公告)日：2014-12-04

    申请号：US14364074

    申请日：2011-12-12

    申请人： Tadashi Okumura ,  Shinichi Saito ,  Kazuki Tani ,  Etsuko Nomoto ,  Katsuya Oda

    发明人： Tadashi Okumura ,  Shinichi Saito ,  Kazuki Tani ,  Etsuko Nomoto ,  Katsuya Oda

    IPC分类号： H01S5/32 ,  H01L31/0352 ,  H01L31/028

    CPC分类号： H01L33/34 ,  H01L31/035272 ,  H01L31/103 ,  H01L33/44 ,  H01S5/021 ,  H01S5/2214 ,  H01S5/3211 ,  H01S5/3219 ,  H01S5/3223 ,  H01L2924/01032 ,  H01L2924/10252

    摘要： In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.

    摘要翻译： 为了提供高发光效率或低功耗的高可靠性硅锗半导体光学元件，可以减少或防止在发光层或光吸收层与包层之间的界面上发生位错或晶体缺陷 在硅锗半导体光学元件中，在锗发光层或光吸收层10和设置在基板上方的包覆层12之间设置非发光锗保护层11。 锗保护层11具有与锗发光层或光吸收层10的电导率不同的导电性。

    SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND LIGHT RECEIVER
    5.
    发明申请
    SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND LIGHT RECEIVER 审中-公开
    半导体灯接收元件和接收器

    公开(公告)号：US20150001581A1

    公开(公告)日：2015-01-01

    申请号：US14374193

    申请日：2012-01-23

    申请人： Katsuya Oda ,  Shinichi Saito ,  Kazuki Tani

    发明人： Katsuya Oda ,  Shinichi Saito ,  Kazuki Tani

    IPC分类号： H01L31/107 ,  H01L31/028 ,  H01L31/0232

    CPC分类号： H01L31/1075 ,  H01L31/02327 ,  H01L31/028

    摘要： An APD in which a first undoped semiconductor region and a second undoped semiconductor region having different semiconductor materials and arranged on an insulating film configure a photo-absorption layer and a multiplying layer, respectively, is employed, whereby crystalline of an interface between the photo-absorption layer and the multiplying layer becomes favorable, and a dark current caused by crystal defects can be decreased. Accordingly, light-receiving sensitivity of an avalanche photodiode can be improved. Further, doping concentration of the light-receiving layer and the multiplying layer can be made small. Therefore, a junction capacitance of the diode can be decreased, and a high-speed operation becomes possible.

    摘要翻译： 其中采用分别配置在绝缘膜上的具有不同半导体材料的第一未掺杂半导体区域和第二未掺杂半导体区域构成光吸收层和倍增层的APD，由此， 吸收层和相乘层变得有利，并且可以减少由晶体缺陷引起的暗电流。 因此，可以提高雪崩光电二极管的受光灵敏度。 此外，可以使光接收层和倍增层的掺杂浓度变小。 因此，可以减小二极管的结电容，并且可以进行高速操作。