公开(公告)号：US20120287959A1

公开(公告)日：2012-11-15

申请号：US13521533

申请日：2011-01-28

申请人： Kazuki Tani ,  Shinichi Saito ,  Toshiki Sugawara ,  Youngkun Lee ,  Digh Hisamoto ,  Makoto Miura ,  Katsuya Oda

发明人： Kazuki Tani ,  Shinichi Saito ,  Toshiki Sugawara ,  Youngkun Lee ,  Digh Hisamoto ,  Makoto Miura ,  Katsuya Oda

IPC分类号： H01S5/22

CPC分类号： H01S5/3223 ,  H01L33/34 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/1231 ,  H01S5/4031 ,  H01L2924/00

摘要： A germanium light-emitting device emitting light at high efficiency is provided by using germanium of small threading dislocation density. A germanium laser diode having a high quality germanium light-emitting layer is attained by using germanium formed over silicon dioxide. A germanium laser diode having a carrier density higher than the carrier density limit that can be injected by existent n-type germanium can be provided using silicon as an n-type electrode.

摘要翻译： 通过使用小螺纹位错密度的锗来提供高效率发光的锗发光器件。 通过使用在二氧化硅上形成的锗来获得具有高质量锗发光层的锗激光二极管。 可以使用硅作为n型电极来提供具有高于可由现有的n型锗注入的载流子密度极限的载流子密度的锗激光二极管。

公开(公告)号：US20110031578A1

公开(公告)日：2011-02-10

申请号：US12838444

申请日：2010-07-17

申请人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

发明人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

IPC分类号： H01L31/10 ,  H01L31/18

CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1124 ,  H01L31/1808 ,  Y02E10/547

摘要： A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

摘要翻译： 半导体光电二极管包括半导体衬底; 形成在半导体衬底上的第一导电型第一半导体层; 形成在所述第一半导体层上方的高电阻第二半导体层; 形成在所述第二半导体层上方的第一导电型第三半导体层; 以及埋在第二半导体层中的第二导电型第四半导体层，其中第四半导体层在与半导体衬底的表面水平的方向上以预定距离分开。

公开(公告)号：US20110031529A1

公开(公告)日：2011-02-10

申请号：US12838445

申请日：2010-07-17

申请人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

发明人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/10

CPC分类号： H01L31/03921 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  Y02E10/547

摘要： A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

摘要翻译： 半导体光电二极管装置包括半导体衬底，第一缓冲层，其部分含有不同于半导体衬底的材料;第一半导体层，形成在缓冲层上方，具有不同于半导体衬底的晶格常数; 第二缓冲层，形成在第一半导体层的上方，并且在其一部分中含有与第一半导体层相同的元件;以及第二半导体层，形成在缓冲层的上方，第一半导体层的一部分由 多个岛状部分，各自被绝缘膜包围，第二缓冲层允许第一半导体层的相邻岛状物彼此聚结并与绝缘膜接触。

公开(公告)号：US08350301B2

公开(公告)日：2013-01-08

申请号：US12838444

申请日：2010-07-17

申请人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

发明人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

IPC分类号： H01L21/00

CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1124 ,  H01L31/1808 ,  Y02E10/547

摘要： A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

摘要翻译： 半导体光电二极管包括半导体衬底; 形成在半导体衬底上的第一导电型第一半导体层; 形成在所述第一半导体层上方的高电阻第二半导体层; 形成在所述第二半导体层上方的第一导电型第三半导体层; 以及埋在第二半导体层中的第二导电型第四半导体层，其中第四半导体层在与半导体衬底的表面水平的方向上以预定距离分开。

公开(公告)号：US08294213B2

公开(公告)日：2012-10-23

申请号：US12838445

申请日：2010-07-17

申请人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

发明人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

IPC分类号： H01L21/00 ,  H01L21/331 ,  H01L27/12

CPC分类号： H01L31/03921 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  Y02E10/547

摘要： A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

摘要翻译： 半导体光电二极管装置包括半导体衬底，第一缓冲层，其部分含有不同于半导体衬底的材料;第一半导体层，形成在缓冲层上方，具有不同于半导体衬底的晶格常数; 第二缓冲层，形成在第一半导体层的上方，并且在其一部分中含有与第一半导体层相同的元件;以及第二半导体层，形成在缓冲层的上方，第一半导体层的一部分由 多个岛状部分，各自被绝缘膜包围，第二缓冲层允许第一半导体层的相邻岛状物彼此聚结并与绝缘膜接触。

公开(公告)号：US06400864B1

公开(公告)日：2002-06-04

申请号：US09655827

申请日：2000-09-06

申请人： Youngkun Lee

发明人： Youngkun Lee

IPC分类号： G02B628

CPC分类号： G02B6/12011 ,  G02B6/12021 ,  H01S5/026 ,  H01S5/0268 ,  H01S5/4025 ,  H01S5/4068 ,  H01S5/4087 ,  H01S5/50 ,  H04B10/2914 ,  H04B10/294 ,  H04B2210/258 ,  H04J14/02

摘要： A semiconductor optical amplifier module comprises: a demultiplexer made of a semiconductor material to separate an optical input signal containing a plurality of wavelength components into a plurality of demultiplexed signals, each of the demultiplexed signals having a different one of the wavelength component; a plurality of semiconductor optical amplifiers each optically coupled to the demultiplexer to amplify a corresponding one of the demultiplexed signals; and a multiplexer made of the semiconductor material and optically coupled to the plurality of semiconductor optical amplifiers to combine the demultiplexed signals amplified by the semiconductor optical amplifiers to produce a multiplexed signal. The demultiplexer, the semiconductor amplifiers and the multiplexer are integrated on a single semiconductor substrate. The demultiplexer and the multiplexer may be implemented by arrayed waveguide diffraction grating structures, and the semiconductor optical amplifiers may be implemented by a semiconductor quantum well structure having well widths ranging from a minimum value to a maximum value. The semiconductor optical amplifiers can provide a gain wavelength bandwidth of 80-800 nm.

摘要翻译： 半导体光放大器模块包括：由半导体材料制成的解复用器，用于将包含多个波长分量的光输入信号分离成多个解复用信号，每个解复用信号具有不同的波长分量; 多个半导体光放大器，每个光耦合到所述解复用器以放大所述解复用的信号中的对应的一个; 以及由所述半导体材料制成并且光耦合到所述多个半导体光放大器以将由所述半导体光放大器放大的解复用信号组合以产生多路复用信号的多路复用器。 解复用器，半导体放大器和多路复用器集成在单个半导体衬底上。 解复用器和多路复用器可以通过阵列波导衍射光栅结构来实现，并且半导体光放大器可以通过半导体量子阱结构来实现，其宽度范围从最小值到最大值。 半导体光放大器可以提供80-800nm的增益波长带宽。

公开(公告)号：US06931189B2

公开(公告)日：2005-08-16

申请号：US10321506

申请日：2002-12-18

申请人： Youngkun Lee ,  Kazuhiko Hosomi ,  Toshio Katsuyama ,  Tatsuya Tomaru

发明人： Youngkun Lee ,  Kazuhiko Hosomi ,  Toshio Katsuyama ,  Tatsuya Tomaru

IPC分类号： G02B6/30 ,  G02B6/02 ,  G02B6/12 ,  G02B6/122 ,  G02B6/14 ,  G02B6/10 ,  G02B6/26

CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02B6/1228 ,  G02B6/14 ,  G02B6/30

摘要： The invention provides an optical waveguide for enabling the reduction of a coupling loss caused by difference in the size of a mode field diameter between optical waveguide modes different in the mode field diameter and a coupling loss caused by reflection on a boundary caused by the difference of media and an optical device using it. Structure provided with a mode field diameter converter provided with an antireflection part required to reduce a coupling loss between a microoptical circuit and a single mode optical fiber is integrally produced using effective refractive index control based upon photonic crystal structure.

摘要翻译： 本发明提供了一种光波导，其能够减少由模场直径不同的光波导模之间的模场直径尺寸的差异引起的耦合损耗和由边界上的反射引起的边界反射引起的耦合损耗 媒体和使用它的光学设备。 提供了具有减小微光电路和单模光纤之间的耦合损耗所需的抗反射部件的模场直径转换器的结构，是使用基于光子晶体结构的有效折射率控制而一体化的。