公开(公告)号：US5616063A

公开(公告)日：1997-04-01

申请号：US309193

申请日：1994-09-20

申请人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Masako Kodera ,  Shirou Mishima ,  Atsushi Shigeta ,  Masayoshi Hirose ,  Norio Kimura ,  Seiji Ishikawa

发明人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Masako Kodera ,  Shirou Mishima ,  Atsushi Shigeta ,  Masayoshi Hirose ,  Norio Kimura ,  Seiji Ishikawa

IPC分类号： H01L21/302 ,  B08B1/04 ,  B24B27/00 ,  B24B37/04 ,  B24B37/34 ,  B24B51/00 ,  B24B55/12 ,  H01L21/00 ,  H01L21/677 ,  B24B49/00

CPC分类号： H01L21/67167 ,  B08B1/04 ,  B08B13/00 ,  B24B27/0023 ,  B24B37/04 ,  B24B37/345 ,  B24B51/00 ,  B24B55/12 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67161 ,  H01L21/67219 ,  H01L21/67745

摘要： A polishing apparatus is a cluster type of apparatus having a plurality of units which perform various operations. The polishing apparatus includes a universal transfer robot having at least one arm for transferring a workpiece, a plurality of units disposed around the universal transfer robot and including a loading unit for receiving the workpiece to be polished, at least one polishing unit for polishing the workpiece, at least one washing unit for washing the workpiece which has been polished and an unloading unit for receiving the cleaned workpiece. Discrete mechanisms respectively transfer a clean workpiece and a dirty workpiece amongst the units.

摘要翻译： 抛光装置是具有执行各种操作的多个单元的集群类型的装置。 抛光装置包括具有用于传送工件的至少一个臂的通用传送机器人，设置在通用传送机器人周围的多个单元，并且包括用于接收被抛光工件的装载单元，用于抛光工件的至少一个抛光单元 至少一个用于清洗已经被抛光的工件的洗涤单元和用于接收清洁的工件的卸载单元。 离散机构分别在单元之间传送清洁的工件和脏工件。

公开(公告)号：US5398459A

公开(公告)日：1995-03-21

申请号：US156641

申请日：1993-11-24

申请人： Katsuya Okumura ,  Tohru Watanabe ,  Riichirou Aoki ,  Hiroyuki Yano ,  Masako Kodera ,  Atsushi Shigeta ,  You Ishii ,  Norio Kimura ,  Masayoshi Hirose ,  Yukio Ikeda

发明人： Katsuya Okumura ,  Tohru Watanabe ,  Riichirou Aoki ,  Hiroyuki Yano ,  Masako Kodera ,  Atsushi Shigeta ,  You Ishii ,  Norio Kimura ,  Masayoshi Hirose ,  Yukio Ikeda

IPC分类号： B24B37/10 ,  B24B37/30 ,  B24B1/00

CPC分类号： B24B37/102 ,  B24B37/30

摘要： A workpiece such as a semiconductor wafer is positioned between a turntable and a top ring and polished by an abrasive cloth on the turntable while the top ring is being pressed against the turntable. The top ring has a retaining ring for preventing the workpiece from deviating from the lower surface of the top ring, and the retaining ring has an inside diameter larger than an outside diameter of the workpiece. The rotation of the turntable imparts a pressing force in a direction parallel to the upper surface of the turntable to the workpiece so that an outer periphery of the workpiece contacts an inner periphery of the retaining ring, and the rotation of the retaining ring imparts a rotational force to the workpiece so that the workpiece performs a planetary motion relative to the top ring in the retaining ring.

摘要翻译： 诸如半导体晶片的工件位于转盘和顶环之间，并且当顶环被压靠在转盘上时，其通过研磨布在转盘上抛光。 顶环具有用于防止工件偏离顶环的下表面的保持环，并且保持环的内径大于工件的外径。 转台的转动使平台于转台上表面的方向向工件施加压力，使得工件的外周与保持环的内周接触，并且保持环的旋转赋予转动 使工件相对于保持环中的顶环执行行星运动。

公开(公告)号：US5653623A

公开(公告)日：1997-08-05

申请号：US357176

申请日：1994-12-13

申请人： Norio Kimura ,  Seiji Ishikawa ,  Masako Kodera ,  Atsushi Shigeta ,  Riichirou Aoki

发明人： Norio Kimura ,  Seiji Ishikawa ,  Masako Kodera ,  Atsushi Shigeta ,  Riichirou Aoki

IPC分类号： B24B53/007 ,  B24B53/017 ,  B24B7/04 ,  B24B29/02

CPC分类号： B24B53/017

摘要： A polishing apparatus for polishing a surface of a workpiece such as a semiconductor wafer is installed in a clean room. The polishing apparatus includes a polishing section having a turntable with an abrasive cloth mounted on an upper surface thereof, a top ring for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, a loading section for loading the workpiece to be polished onto the top ring, and an unloading section for unloading the workpiece which has been polished from the top ring. A cover covers an entire area of movement of the top ring including the polishing section, the loading section and the unloading section. An exhaust duct discharges air of an interior space of the cover to an outside of an installation space of the polishing apparatus.

摘要翻译： 用于抛光诸如半导体晶片的工件的表面的抛光装置安装在洁净室中。 抛光装置包括具有安装在其上表面上的研磨布的转台的抛光部分，用于支撑待抛光工件的顶环，并将工件压靠在研磨布上，用于将待抛光工件加载的装载部分 以及用于卸载已经从顶环抛光的工件的卸载部分。 盖子覆盖包括抛光部分，装载部分和卸载部分在内的顶环的整个运动区域。 排气管将盖的内部空间的空气排出到抛光装置的安装空间的外部。

公开(公告)号：US5597341A

公开(公告)日：1997-01-28

申请号：US451226

申请日：1995-05-26

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  B24B51/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metal is during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US5695601A

公开(公告)日：1997-12-09

申请号：US578894

申请日：1995-12-27

申请人： Masako Kodera ,  Atsushi Shigeta ,  Shiro Mishima ,  Hiromi Yajima ,  Riichirou Aoki

发明人： Masako Kodera ,  Atsushi Shigeta ,  Shiro Mishima ,  Hiromi Yajima ,  Riichirou Aoki

IPC分类号： B24B37/04 ,  B24B49/12 ,  H01L21/66 ,  H01L21/306

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B49/12 ,  H01L22/20

摘要： A film formed on a wafer is polished in a CMP unit. Thereafter, the wafer, which is adhered to a wafer holder, is moved to a portion above an optical sensor. A surface of the wafer is radiated with, for example, a visible ray, thereby measuring a thickness of the film which has been polished. A control unit automatically sets a polishing time for polishing a film on a wafer to be polished next.

摘要翻译： 在CMP单元上抛光形成在晶片上的膜。 此后，粘附到晶片保持器上的晶片移动到光学传感器上方的部分。 用例如可见光辐射晶片的表面，从而测量已经被抛光的膜的厚度。 控制单元自动设置抛光时间，用于在随后抛光的晶片上抛光膜。

公开(公告)号：US5948205A

公开(公告)日：1999-09-07

申请号：US897570

申请日：1997-07-21

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US5914275A

公开(公告)日：1999-06-22

申请号：US897324

申请日：1997-07-21

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  H01L21/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

公开(公告)号：US5445996A

公开(公告)日：1995-08-29

申请号：US66375

申请日：1993-05-25

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  H01L21/302 ,  H01L21/463

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US5830041A

公开(公告)日：1998-11-03

申请号：US743361

申请日：1996-11-04

申请人： Tamami Takahashi ,  Fumihiko Sakata ,  Norio Kimura ,  Masako Kodera ,  Atsushi Shigeta

发明人： Tamami Takahashi ,  Fumihiko Sakata ,  Norio Kimura ,  Masako Kodera ,  Atsushi Shigeta

IPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/16 ,  B24B7/22

CPC分类号： B24B37/013 ,  B24B49/16

摘要： A method and apparatus for determining a planar end point on a workpiece such as a semiconductor wafer in a polishing process for polishing the workpiece to a flat mirror finish. The workpiece having an uneven surface is held by a top ring and pressed against a polishing platen. The workpiece is moved relative to the polishing platen to polish the workpiece, and a change in a frictional force between the workpiece and the polishing platen is detected. A reference time when the workpiece having an uneven surface is polished to a flat surface is determined based on the change of the frictional force between the workpiece and the polishing platen. The time when a certain period of polishing time from the reference time elapses is determined as an endpoint on the workpiece.

摘要翻译： 一种用于在用于将工件抛光到平面镜面抛光的抛光工艺中确定诸如半导体晶片的工件上的平面终点的方法和装置。 具有不平坦表面的工件由顶环保持并压靠在研磨台板上。 工件相对于研磨台板移动以抛光工件，并且检测到工件和抛光台板之间的摩擦力的变化。 基于工件和研磨台板之间的摩擦力的变化，确定具有不平坦表面的工件被抛光到平坦表面的参考时间。 从参考时间经过一定时间的抛光时间经过的时间被确定为工件上的端点。

公开(公告)号：US5860847A

公开(公告)日：1999-01-19

申请号：US708948

申请日：1996-09-06

申请人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Toyomi Nishi ,  Seiji Katsuoka ,  Hiromi Yajima ,  Masako Kodera

发明人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Toyomi Nishi ,  Seiji Katsuoka ,  Hiromi Yajima ,  Masako Kodera

IPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/04 ,  B24B49/16 ,  H01L21/66 ,  B24B49/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/04 ,  B24B49/16 ,  H01L22/26

摘要： A polishing apparatus has a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring disposed above the turntable for supporting a workpiece to be polished against the abrasive cloth under predetermined pressure. The turntable is rotatable by a first motor through a timing pulley connected to the first motor, and the top ring is rotatable by a second motor through a timing pulley connected to the second motor. A torque detector incorporated in the timing pulley connected to at least one of the first motor and the second motor detects an output torque produced by the at least one of the first motor and the second motor.

摘要翻译： 抛光装置具有安装在其上表面上的研磨布的转台和设置在转盘上方的顶环，用于在预定压力下将待抛光的工件支撑在磨料上。 转盘可以通过连接到第一马达的定时皮带由第一马达旋转，并且顶环可以通过连接到第二马达的定时皮带的第二马达转动。 并入到与第一电动机和第二电动机中的至少一个连接的正时轮中的转矩检测器检测由第一电动机和第二电动机中的至少一个产生的输出转矩。