公开(公告)号：US20090283976A1

公开(公告)日：2009-11-19

申请号：US12432098

申请日：2009-04-29

申请人： Kazuaki Kaneko ,  Yoh Tanaka ,  Masayoshi Ikeda ,  Yohsuke Shibuya

发明人： Kazuaki Kaneko ,  Yoh Tanaka ,  Masayoshi Ikeda ,  Yohsuke Shibuya

IPC分类号： B23Q3/15 ,  B23Q3/00

CPC分类号： H01L21/6831 ,  H01L21/67103 ,  H01L21/68728 ,  Y10T279/23 ,  Y10T279/34

摘要： A substrate holding apparatus comprises a substrate holding mechanism configured to hold a substrate; a heating mechanism; and a heat-conductive member which is interposed between the substrate holding mechanism and the heating mechanism to be in contact therewith and conducts heat generated by the heating mechanism to the substrate holding mechanism, wherein the heat-conductive member has a recessed section that opens to the substrate.

摘要翻译： 基板保持装置包括：基板保持机构，其构造成保持基板; 加热机构; 以及介于所述基板保持机构和所述加热机构之间以与其接触的导热构件，其将由所述加热机构产生的热量传导到所述基板保持机构，其中，所述导热构件具有： 底物。

公开(公告)号：US20120073960A1

公开(公告)日：2012-03-29

申请号：US13223830

申请日：2011-09-01

申请人： Yohsuke SHIBUYA ,  Masayoshi Ikeda ,  Yasumi Sago

发明人： Yohsuke SHIBUYA ,  Masayoshi Ikeda ,  Yasumi Sago

IPC分类号： C23C14/35

CPC分类号： H01L21/67005 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3452 ,  H01L21/28061 ,  H01L21/2855 ,  H01L29/4941 ,  H01L29/78

摘要： A magnetron sputtering apparatus includes a cathode electrode having a first surface and a second surface opposite to the first surface, a target attachable to the first surface of the cathode electrode, and a magnet unit which is adjacent to the second surface of the cathode electrode and forms a magnetic field on the target surface. The magnet unit includes a plurality of magnet pieces each having a first magnet member which is magnetized in a direction perpendicular to the target and is arranged with a magnetic pole end face oriented toward the target, and a second magnet member which is magnetized opposite to the first magnet member in the direction perpendicular to the target and is arranged in contact with the first magnet member with a magnetic pole end face being oriented toward the target.

摘要翻译： 磁控管溅射装置包括具有第一表面和与第一表面相对的第二表面的阴极，可附着到阴极电极的第一表面的靶和与阴极的第二表面相邻的磁体单元， 在目标表面上形成磁场。 磁体单元包括多个磁体片，每个磁体片具有在垂直于靶的方向上被磁化的第一磁体部件，并且配置有朝向靶子的磁极端面，并且与第二磁体部件相对地被磁化 第一磁体构件沿垂直于靶的方向设置成与第一磁体构件接触，磁极端面朝向靶。

公开(公告)号：US20080053614A1

公开(公告)日：2008-03-06

申请号：US11845135

申请日：2007-08-27

申请人： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Daisuke Kondo ,  Osamu Morita

发明人： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Daisuke Kondo ,  Osamu Morita

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/5096 ,  H01J37/3244

摘要： A surface processing apparatus includes a process chamber including a gas ejection mechanism; an exhaust for exhausting the inside of said process chamber; and a gas supply for supplying a gas to the gas ejection mechanism. The gas ejection mechanism includes a a first gas distribution mechanism for distributing the gas into a cooling or heating mechanism, including a gas distribution plate placed in the frame member, the gas distribution plate having a plurality of holes that extend therethrough, the cooling or heating mechanism having multiple gas passages that extend therethrough, the plate having a number of outlets to eject the gas into the process chamber, wherein there are more outlets in the plate than there are gas passages, and the plate is fixed to a second gas distribution mechanism with a clamping member.

摘要翻译： 表面处理装置包括：处理室，包括气体喷射机构; 用于排出所述处理室内部的废气; 以及用于向气体喷射机构供给气体的气体供给。 气体喷射机构包括：第一气体分配机构，用于将气体分配到冷却或加热机构中，包括布置在框架构件中的气体分配板，气体分配板具有多个穿过其延伸的孔，冷却或加热机构 具有延伸穿过其中的多个气体通道，所述板具有多个出口以将气体喷射到处理室中，其中板中的出口多于具有气体通道的多个出口，并且板被固定到第二气体分配机构，其具有 夹紧构件。

公开(公告)号：US07976716B2

公开(公告)日：2011-07-12

申请号：US12392385

申请日：2009-02-25

申请人： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Takuji Okada

发明人： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Takuji Okada

IPC分类号： B44C1/22

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： A method of using a heat exchanger efficiently and uniformly to cool or heats portions to be controlled to a prescribed temperature, and then continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.

摘要翻译： 使用热交换器有效地均匀地将要控制的部分冷却或加热到规定温度的方法，然后连续进行稳定的处理。 热交换器通过在两个板之间布置分隔壁而构成，以形成流体通道和平行于通道的翅片，或者在两个板的每一个上倾斜规定的角度，以使得该通道与与该通道接触的构件 板被冷却或加热流体流过通道。

公开(公告)号：US20080156440A1

公开(公告)日：2008-07-03

申请号：US12000624

申请日：2007-12-14

申请人： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Daisuke Kondo ,  Osamu Morita

发明人： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Daisuke Kondo ,  Osamu Morita

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/5096 ,  H01J37/3244

摘要： A surface processing apparatus includes a process chamber including a gas ejection mechanism; an exhaust for exhausting the inside of said process chamber; and a gas supply for supplying a gas to the gas ejection mechanism. The gas ejection mechanism includes a first gas distribution mechanism for distributing the gas into a cooling or heating mechanism, including a gas distribution plate placed in the frame member, the gas distribution plate having a plurality of holes that extend therethrough, the cooling or heating mechanism having multiple gas passages that extend therethrough, the plate having a number of outlets to eject the gas into the process chamber, wherein there are more outlets in the plate than there are gas passages, and the plate is fixed to a second gas distribution mechanism with a clamping member.

摘要翻译： 表面处理装置包括：处理室，包括气体喷射机构; 用于排出所述处理室内部的废气; 以及用于向气体喷射机构供给气体的气体供给。 气体喷射机构包括用于将气体分配到冷却或加热机构中的第一气体分配机构，包括设置在框架构件中的气体分配板，气体分配板具有穿过其延伸的多个孔，冷却或加热机构 具有延伸穿过其中的多个气体通道，所述板具有多个出口以将气体喷射到处理室中，其中板中的出口多于具有气体通道的多个出口，并且板被固定到第二气体分配机构，其具有 夹紧构件。

公开(公告)号：US07011744B2

公开(公告)日：2006-03-14

申请号：US10308164

申请日：2002-12-03

申请人： Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Jun Miyaji ,  Noriaki Tateno

发明人： Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Jun Miyaji ,  Noriaki Tateno

IPC分类号： B01D36/00 ,  F25B29/00

CPC分类号： G05D23/1393

摘要： A brine supply unit for supplying brine to at least one load after controlling the brine so as to meet a target temperature of the load comprises: a heat exchanger disposed at a brine-cooling channel, through which the brine returned from the load flows, for cooling the brine with water for industrial use; a heater disposed at a brine-heating channel formed in parallel with the brine-cooling channel, through which the brine flows, for heating the brine; a mixing section disposed at a connecting portion between the brine-cooling channel and the brine-heating channel, for mixing the cooled brine and the heated brine; and a tank disposed between the mixing section and the load, which has a capacity of about 10 liters or more and is constructed so that the brine can pass therethrough slowly to relieve a sudden temperature change of the brine.

公开(公告)号：USRE42175E1

公开(公告)日：2011-03-01

申请号：US12470231

申请日：2009-05-21

申请人： Yasumi Sago ,  Kazuaki Kaneko ,  Takuji Okada ,  Masayoshi Ikeda ,  Toshihiro Tachikawa ,  Tadashi Inokuchi ,  Takashi Kayamoto

发明人： Yasumi Sago ,  Kazuaki Kaneko ,  Takuji Okada ,  Masayoshi Ikeda ,  Toshihiro Tachikawa ,  Tadashi Inokuchi ,  Takashi Kayamoto

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： B25B11/002 ,  Y10T279/23

摘要： This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer, which have internal stress directed oppositely to that of the chucking electrode. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

摘要翻译： 本申请公开了一种ESC阶段的结构，其中夹持电极被中间层和覆盖层夹持。 调节层和覆盖层在电介质板和夹持电极之间具有热膨胀系数。 本申请还公开了一种ESC台的结构，其中夹持电极被夹持在与夹持电极相反的内部应力的调节层和覆盖层。 本申请进一步公开了一种用于在基板保持在高于室温的温度下进行基板上的处理的基板处理装置，其包括在该过程期间保持基板的静电夹持台。

公开(公告)号：US07615133B2

公开(公告)日：2009-11-10

申请号：US10497720

申请日：2002-12-03

申请人： Noriaki Tateno ,  Jun Miyaji ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru

发明人： Noriaki Tateno ,  Jun Miyaji ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683

CPC分类号： H01L21/67103 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherein the cooling plate is formed by forging processing to a Cu-based composite material comprising Cu—W, Cu—W—Ni, Cu—Mo, or Cu—Mo—Ni. By adjusting the ratio of Cu and Ni having a great thermal expansion coefficient and W and Mo having a small thermal expansion coefficient in a Cu-based composite material, it is possible to obtain a highly thermally conductive material having the same thermal expansion coefficient as an alumina material for an electrostatic chuck. However, since such a composite material has a penetration leak, it cannot be used in a vacuum system. According to the present invention, by conducting forging processing, a penetration leak can be prevented. Also, corrosion resistance which is important for a cooling plate can be improved by applying a Ni, Cr or Cu film by plating or sputtering.

摘要翻译： 一种用于半导体制造装置的静电吸盘模块，其可以用水冷却并且其中没有渗透泄漏包括氧化铝的静电吸盘和与静电吸盘结合的冷却板，其中冷却板通过锻造形成 对Cu-W，Cu-W-Ni，Cu-Mo或Cu-Mo-Ni的Cu基复合材料的加工。 通过在Cu系复合材料中调节热膨胀系数大的Cu和Ni的比例以及热膨胀系数小的W和Mo，可以获得具有相同的热膨胀系数的高导热性材料 用于静电卡盘的氧化铝材料。 然而，由于这种复合材料具有渗透泄漏，所以不能用于真空系统。 根据本发明，通过进行锻造处理，能够防止渗透泄漏。 此外，通过电镀或溅射施加Ni，Cr或Cu膜，可以提高对冷却板重要的耐腐蚀性。

公开(公告)号：US20050127619A1

公开(公告)日：2005-06-16

申请号：US10497720

申请日：2002-12-03

申请人： Noriaki Tateno ,  Jun Miyaji ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru

发明人： Noriaki Tateno ,  Jun Miyaji ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru

IPC分类号： F25D1/02 ,  F25D9/00 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00 ,  B23B31/28

CPC分类号： H01L21/67103 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherein the cooling plate is formed by forging processing to a Cu-based composite material comprising Cu—W, Cu—W—Ni, Cu—Mo, or Cu—Mo—Ni. By adjusting the ratio of Cu and Ni having a great thermal expansion coefficient and W and Mo having a small thermal expansion coefficient in a Cu-based composite material, it is possible to obtain a highly thermally conductive material having the same thermal expansion coefficient as an alumina material for an electrostatic chuck. However, since such a composite material has a penetration leak, it cannot be used in a vacuum system. According to the present invention, by conducting forging processing, a penetration leak can be prevented. Also, corrosion resistance which is important for a cooling plate can be improved by applying a Ni, Cr or Cu film by plating or sputtering.

摘要翻译： 一种用于半导体制造装置的静电吸盘模块，其可以用水冷却并且其中没有渗透泄漏包括氧化铝的静电吸盘和与静电吸盘结合的冷却板，其中冷却板通过锻造形成 对Cu-W，Cu-W-Ni，Cu-Mo或Cu-Mo-Ni的Cu基复合材料的加工。 通过在Cu系复合材料中调节热膨胀系数大的Cu和Ni的比例以及热膨胀系数小的W和Mo，可以获得具有相同的热膨胀系数的高导热性材料 用于静电卡盘的氧化铝材料。 然而，由于这种复合材料具有渗透泄漏，所以不能用于真空系统。 根据本发明，通过进行锻造处理，能够防止渗透泄漏。 此外，通过电镀或溅射施加Ni，Cr或Cu膜，可以提高对冷却板重要的耐腐蚀性。

公开(公告)号：US07513063B2

公开(公告)日：2009-04-07

申请号：US10375349

申请日：2003-02-28

申请人： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Takuji Okada

发明人： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Takuji Okada

IPC分类号： F26B17/00

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： A heat exchanger efficiently and uniformly cools or heats portions to be controlled to a prescribed temperature, and then provides a surface processing apparatus which makes it possible to continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.

摘要翻译： 热交换器将要控制的部分有效地均匀地冷却或加热到规定温度，然后提供能够连续进行稳定加工的表面处理装置。 热交换器通过在两个板之间布置分隔壁而构成，以形成流体通道和平行于通道的翅片，或者在两个板的每一个上倾斜规定的角度，以使得该通道与与该通道接触的构件 板被冷却或加热流体流过通道。