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    Method for forming thin film and base and having thin film formed by such method
    1.
    发明申请
    Method for forming thin film and base and having thin film formed by such method 失效
    用这种方法形成薄膜和基底并具有薄膜的方法

    公开(公告)号：US20060199014A1

    公开(公告)日：2006-09-07

    申请号：US10544084

    申请日：2004-07-08

    申请人： Hiromoto II ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

    发明人： Hiromoto II ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

    IPC分类号： B32B9/00

    CPC分类号： C23C16/45595 ,  C23C16/08 ,  C23C16/18 ,  C23C16/505 ,  C23C16/56 ,  Y10T428/31504

    摘要： A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

    摘要翻译： 一种形成膜的方法，包括第一工艺和第二工艺，所述第一工艺包括以下步骤：将放电气体供应到在大气压或大气压附近产生高频电场A的第一放电空间，由此放电气体 是激动的 将激发的放电气体的能量转移到成膜气体，由此成膜气体被激发; 并且将基板暴露于成膜气体以在基板上形成膜，第二工序包括以下步骤：将含氧化气体的气体供给到在大气中或接近大气压下产生高频电场B的第二放电空间 由此含有氧化气体的气体是激发的; 并且在第一工序中形成的膜暴露于含有氧化气体的激发气体。

    Method for forming thin film and base and having thin film formed by such method
    2.
    发明授权
    Method for forming thin film and base and having thin film formed by such method 失效
    用这种方法形成薄膜和基底并具有薄膜的方法

    公开(公告)号：US07740917B2

    公开(公告)日：2010-06-22

    申请号：US10544084

    申请日：2004-07-08

    申请人： Hiromoto Ii ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

    发明人： Hiromoto Ii ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： C23C16/45595 ,  C23C16/08 ,  C23C16/18 ,  C23C16/505 ,  C23C16/56 ,  Y10T428/31504

    摘要： A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

    摘要翻译： 一种形成膜的方法，包括第一工艺和第二工艺，所述第一工艺包括以下步骤：将放电气体供应到在大气压或大气压附近产生高频电场A的第一放电空间，由此放电气体 是激动的 将激发的放电气体的能量转移到成膜气体，由此成膜气体被激发; 并且将基板暴露于成膜气体以在基板上形成膜，第二工序包括以下步骤：将含氧化气体的气体供给到在大气中或接近大气压下产生高频电场B的第二放电空间 由此含有氧化气体的气体是激发的; 并且在第一工序中形成的膜暴露于含有氧化气体的激发气体。

    Gas barrier film, process for production of gas barrier film, and electronic device
    5.
    发明授权
    Gas barrier film, process for production of gas barrier film, and electronic device 有权
    阻气膜，阻气膜的制造方法以及电子装置

    公开(公告)号：US09359505B2

    公开(公告)日：2016-06-07

    申请号：US13810544

    申请日：2011-07-07

    申请人： Hiromoto Ii ,  Satoshi Ito ,  Makoto Honda ,  Kiyoshi Oishi ,  Issei Suzuki

    发明人： Hiromoto Ii ,  Satoshi Ito ,  Makoto Honda ,  Kiyoshi Oishi ,  Issei Suzuki

    IPC分类号： C09D1/00 ,  B05D5/00 ,  C08J7/12 ,  C08J7/04

    CPC分类号： C09D1/00 ,  B05D5/00 ,  C08J7/045 ,  C08J7/123 ,  C08J2323/06 ,  C08J2483/16 ,  Y10T428/24355 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/24975 ,  Y10T428/24992

    摘要： The present invention provides a gas barrier film having high barrier properties, folding/bending resistance and smoothness and excellent cutting suitability, and also provides an organic photoelectric conversion element equipped with the gas barrier film. The gas barrier film is characterized by having a gas barrier layer unit (5) on a side face of at least one surface of a base material (2), wherein the gas barrier layer unit (5) comprises a first barrier layer (3) formed by a chemical vapor deposition method and a second barrier layer (4) formed by applying a silicon compound onto the first barrier layer (3) to form a coating film and modifying the coating film, and wherein the second barrier layer (4) has an unmodified region (4B) on a side facing the base material and a modified region (4A) on a side facing the front layer of the film.

    摘要翻译： 本发明提供了具有高阻隔性，耐折叠性，耐弯曲性，平滑性，切割适用性优异的阻气性膜，还提供了配置有阻气膜的有机光电转换元件。 阻气膜的特征在于在基材（2）的至少一个表面的侧面具有气体阻隔层单元（5），其中阻气层单元（5）包括第一阻挡层（3） 通过化学气相沉积法形成的第二阻挡层（4）和通过在第一阻挡层（3）上涂覆硅化合物形成涂层膜并改性涂膜形成的第二阻挡层（4），并且其中第二阻挡层（4）具有 在面向所述基材的一侧上的未改性区域（4B）和在面向所述膜的前层的一侧上的改质区域（4A）。

    GAS BARRIER FILM, PROCESS FOR PRODUCTION OF GAS BARRIER FILM, AND ELECTRONIC DEVICE
    6.
    发明申请
    GAS BARRIER FILM, PROCESS FOR PRODUCTION OF GAS BARRIER FILM, AND ELECTRONIC DEVICE 有权
    气体阻隔膜，气体阻隔膜生产方法和电子设备

    公开(公告)号：US20130115423A1

    公开(公告)日：2013-05-09

    申请号：US13810544

    申请日：2011-07-07

    申请人： Hiromoto Ii ,  Satoshi Ito ,  Makoto Honda ,  Kiyoshi Oishi ,  Issei Suzuki

    发明人： Hiromoto Ii ,  Satoshi Ito ,  Makoto Honda ,  Kiyoshi Oishi ,  Issei Suzuki

    IPC分类号： C09D1/00 ,  B05D5/00

    CPC分类号： C09D1/00 ,  B05D5/00 ,  C08J7/045 ,  C08J7/123 ,  C08J2323/06 ,  C08J2483/16 ,  Y10T428/24355 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/24975 ,  Y10T428/24992

    摘要： The present invention provides a gas barrier film having high barrier properties, folding/bending resistance and smoothness and excellent cutting suitability, and also provides an organic photoelectric conversion element equipped with the gas barrier film. The gas barrier film is characterized by having a gas barrier layer unit (5) on a side face of at least one surface of a base material (2), wherein the gas barrier layer unit (5) comprises a first barrier layer (3) formed by a chemical vapor deposition method and a second barrier layer (4) formed by applying a silicon compound onto the first barrier layer (3) to form a coating film and modifying the coating film, and wherein the second barrier layer (4) has an unmodified region (4B) on a side facing the base material and a modified region (4A) on a side facing the front layer of the film.

    摘要翻译： 本发明提供了具有高阻隔性，耐折叠性，耐弯曲性，平滑性，切割适用性优异的阻气性膜，还提供了配置有阻气膜的有机光电转换元件。 阻气膜的特征在于在基材（2）的至少一个表面的侧面具有气体阻隔层单元（5），其中阻气层单元（5）包括第一阻挡层（3） 通过化学气相沉积法形成的第二阻挡层（4）和通过在第一阻挡层（3）上涂覆硅化合物形成涂层膜并改性涂膜形成的第二阻挡层（4），并且其中第二阻挡层（4）具有 在面向所述基材的一侧上的未改性区域（4B）和在面向所述膜的前层的一侧上的改质区域（4A）。

    Surface treatment for enhancing hydrophobicity of photographic support and photothermographic material by use thereof
    7.
    发明授权
    Surface treatment for enhancing hydrophobicity of photographic support and photothermographic material by use thereof 失效
    用于增强照相载体和光热敏成像材料的疏水性的表面处理

    公开(公告)号：US06455239B2

    公开(公告)日：2002-09-24

    申请号：US09800376

    申请日：2001-03-06

    申请人： Kiyoshi Oishi ,  Kazuhiro Fukuda

    发明人： Kiyoshi Oishi ,  Kazuhiro Fukuda

    IPC分类号： G03C1795

    CPC分类号： G03C1/915 ,  G03C1/385 ,  G03C1/49863 ,  H01J2237/336 ,  Y10S430/153 ,  Y10T428/31 ,  Y10T428/8305

    摘要： A surface treatment method for enhancing hydrophobicity of the surface of a film support is disclosed, comprising subjecting at least one side of the surface to a gas-discharge plasma treatment in a gas phase atmosphere comprising (a) an inert gas comprising argon or helium and (b) a reactive gas comprising a hydrocarbon gas or fluorinated hydrocarbon gas. There is also disclosed a photothermographic material by the use of the support having been subjected to the surface treatment.

    摘要翻译： 公开了一种用于增强薄膜载体表面的疏水性的表面处理方法，包括使表面的至少一面在气相气氛中进行气体放电等离子体处理，其包含（a）包含氩或氦的惰性气体和 （b）包含烃气体或氟化烃气体的反应气体。 还通过使用经过表面处理的载体，公开了光热敏成像材料。

    Layer formation method, and substrate with a layer formed by the method
    9.
    发明授权
    Layer formation method, and substrate with a layer formed by the method 有权
    层形成方法，以及通过该方法形成的层的衬底

    公开(公告)号：US07166335B2

    公开(公告)日：2007-01-23

    申请号：US10841115

    申请日：2004-05-07

    申请人： Kazuhiro Fukuda ,  Yasuo Morohoshi ,  Akira Nishiwaki ,  Yoshikazu Kondo ,  Yoshiro Toda ,  Kiyoshi Oishi

    发明人： Kazuhiro Fukuda ,  Yasuo Morohoshi ,  Akira Nishiwaki ,  Yoshikazu Kondo ,  Yoshiro Toda ,  Kiyoshi Oishi

    IPC分类号： C23C16/50

    CPC分类号： C23C16/545 ,  C23C16/453 ,  C23C16/505 ,  H05H1/46 ,  H05H2001/466 ,  H05H2001/485 ,  H05H2240/10

    摘要： A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a high frequency electric field across the discharge space, and exposing a substrate to the excited gas, wherein the high frequency electric field is an electric field in which a first high frequency electric field and a second high frequency electric field are superposed, frequency ω2 of the second high frequency electric field is higher than frequency ω1 of the first high frequency electric field, strength V1 of the first high frequency electric field, strength V2 of the second high frequency electric field and strength IV of discharge starting electric field satisfy relationship V1≧IV>V2 or V1>IV≧V2, and power density of the second high frequency electric field is not less than 1 W/cm2.

    摘要翻译： 公开了一种层形成方法，其包括向放电空间供应气体，通过在放电空间上施加高频电场，将基底暴露于激发气体，在大气压或大气压下激发供应的气体，其中， 高频电场是第一高频电场和第二高频电场叠加的电场，第二高频电场的频率ω2 <2>高于频率ω 1，第二高频电场的强度V SUB> 1，第二高频电场的强度V SUB> 2 < 放电起始电场的强度IV满足关系V 1 = IV> V 2或V 1 IV> = V 2 第二高频电场的功率密度不小于1W / cm 2。