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45 条记录 (耗时 0.021 秒)

    Surface-emitting laser, surface-emitting laser array, optical scanning device, and image forming apparatus
    1.
    发明授权
    Surface-emitting laser, surface-emitting laser array, optical scanning device, and image forming apparatus 有权
    表面发射激光器，表面发射激光器阵列，光学扫描装置和成像装置

    公开(公告)号：US08111725B2

    公开(公告)日：2012-02-07

    申请号：US12464408

    申请日：2009-05-12

    申请人： Toshihiro Ishii ,  Kengo Makita ,  Naoto Jikutani ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Satoru Sugawara

    发明人： Toshihiro Ishii ,  Kengo Makita ,  Naoto Jikutani ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Satoru Sugawara

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18355 ,  G03G15/04072 ,  G03G15/0435 ,  G03G2215/0404 ,  H01S5/18311 ,  H01S5/3202 ,  H01S5/423

    摘要： A disclosed surface-emitting laser includes a substrate and multiple semiconductor layers stacked on the substrate. A normal of the principal plane of the substrate is inclined with respect to one of crystal orientations toward one of crystal orientations . The semiconductor layers include a resonator structure including an active layer; and a semiconductor multilayer mirror stacked on the resonator structure. The semiconductor multilayer mirror includes a confined structure where a current passage area is surrounded by an oxidized area including at least an oxide generated by oxidation of a part of a selective oxidation layer containing aluminum. A strain field caused by the oxidation is present at least in a part of the vicinity of the oxidized area. In the strain field, the amount of strain in a first axis direction is different from the amount of strain in a second axis direction.

    摘要翻译： 公开的表面发射激光器包括衬底和堆叠在衬底上的多个半导体层。 衬底的主平面的法线相对于晶体取向<1 0 0>之一朝向晶体取向<11 1>之一倾斜。 半导体层包括包括有源层的谐振器结构; 以及堆叠在谐振器结构上的半导体多层反射镜。 半导体多层反射镜包括限制结构，其中电流通道区域被氧化区域所包围，所述氧化区域至少包括由含有铝的选择氧化层的一部分的氧化而产生的氧化物。 氧化引起的应变场至少存在于氧化区附近的一部分。 在应变场中，第一轴方向的应变量与第二轴方向的应变量不同。

    Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
    2.
    发明授权
    Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus 有权
    表面发射激光元件，表面发射激光器阵列，光学扫描装置和成像装置

    公开(公告)号：US08035676B2

    公开(公告)日：2011-10-11

    申请号：US12432872

    申请日：2009-04-30

    申请人： Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani ,  Toshihiro Ishii

    发明人： Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani ,  Toshihiro Ishii

    IPC分类号： B41J2/45 ,  H01S5/00

    CPC分类号： H01S5/1835 ,  B41J2/471 ,  B82Y20/00 ,  G02B26/12 ,  H01S5/18313 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18394 ,  H01S5/3202 ,  H01S5/3406 ,  H01S5/423 ,  H01S2301/176 ,  H01S2301/185 ,  H01S2304/02 ,  H01S2304/04

    摘要： In a surface emitting laser element, on a substrate whose normal direction of a principal surface is inclined, a resonator structural body including an active layer, and a lower semiconductor DBR and an upper semiconductor DBR sandwiching the resonator structural body are stacked. A shape of a current passing through region in an oxide confinement structure of the upper semiconductor DBR is symmetrical to an axis passing through a center of the current passing through region parallel to an X axis and symmetrical to an axis passing through the center of the current passing through region parallel to a Y axis, and a length of the current passing through region is greater in the Y axis direction than in the X axis direction. A thickness of an oxidized layer surrounding the current passing through region is greater in the −Y direction than in the +X and −X directions.

    摘要翻译： 在表面发射激光元件中，在主表面的法线方向倾斜的基板上堆叠包括有源层的谐振器结构体和夹持谐振器结构体的下半导体DBR和上半导体DBR。 上半导体DBR的氧化物限制结构中的电流通过区域的形状与通过平行于X轴的电流通过区域的中心的轴对称，并且与通过电流的中心的轴对称 通过区域与Y轴平行，并且电流通过区域的长度在Y轴方向上比在X轴方向上大。 围绕电流通过区域的氧化层的厚度在-Y方向上大于在+ X和-X方向上的厚度。

    Surface emitting laser diode, optical scanning apparatus and image forming apparatus
    4.
    发明授权
    Surface emitting laser diode, optical scanning apparatus and image forming apparatus 有权
    表面发射激光二极管，光学扫描装置和成像装置

    公开(公告)号：US08774242B2

    公开(公告)日：2014-07-08

    申请号：US13466217

    申请日：2012-05-08

    申请人： Akihiro Itoh ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani

    发明人： Akihiro Itoh ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani

    IPC分类号： H01S5/00

    CPC分类号： G03G15/04072 ,  B82Y20/00 ,  G02B26/123 ,  H01S5/0014 ,  H01S5/0421 ,  H01S5/0655 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/18355 ,  H01S5/18394 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3436 ,  H01S5/423 ,  H01S2301/185

    摘要： A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to be manufactured with high yield rate.

    摘要翻译： 表面发射激光二极管包括衬底，形成在衬底上的下反射器，形成在下反射器上的有源层，形成在有源层上的上反射器，限流结构，包括由绝缘区包围的电流限制区。 电流限制结构设置在上反射器中或有源层和上反射器之间，并且形成在上反射器上的上电极包括对应于沿与第一方向垂直的第一方向发射光的发射区域的孔 基材表面。 包括电流限制区域的发射区域和电流限制结构被选择性地构造成获得高单横模，稳定偏振方向，各向同性束横截面和小发散角，同时允许以高产率制造装置。

    SURFACE EMITTING LASER DIODE, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS
    7.
    发明申请
    SURFACE EMITTING LASER DIODE, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS 有权
    表面发射激光二极管，光学扫描装置和图像形成装置

    公开(公告)号：US20120294652A1

    公开(公告)日：2012-11-22

    申请号：US13466217

    申请日：2012-05-08

    申请人： Akihiro ITOH ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani

    发明人： Akihiro ITOH ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani

    IPC分类号： G03G15/04 ,  G02B26/08 ,  H01S3/08

    CPC分类号： G03G15/04072 ,  B82Y20/00 ,  G02B26/123 ,  H01S5/0014 ,  H01S5/0421 ,  H01S5/0655 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/18355 ,  H01S5/18394 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3436 ,  H01S5/423 ,  H01S2301/185

    摘要： A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to he manufactured with high yield rate.

    摘要翻译： 表面发射激光二极管包括衬底，形成在衬底上的下反射器，形成在下反射器上的有源层，形成在有源层上的上反射器，限流结构，包括由绝缘区包围的电流限制区。 电流限制结构设置在上反射器中或有源层和上反射器之间，并且形成在上反射器上的上电极包括对应于沿与第一方向垂直的第一方向发射光的发射区域的孔 基材表面。 包括电流限制区域的发射区域和电流限制结构被选择性地构造成获得高单一横模，稳定的偏振方向，各向同性的横截面和小的发散角，同时允许以高产率制造该装置。