公开(公告)号：US08970309B2

公开(公告)日：2015-03-03

申请号：US13546531

申请日：2012-07-11

申请人： Shunichi Sato ,  Akihiro Itoh ,  Yukito Sato

发明人： Shunichi Sato ,  Akihiro Itoh ,  Yukito Sato

IPC分类号： H03L7/26 ,  G04F5/14

CPC分类号： G04F5/14 ,  H03L7/26 ,  Y10T29/49002

摘要： An atomic oscillator is disclosed, including an Alkaline metal cell, a light source illuminating a laser beam to the Alkaline metal cell, and a light detector detecting light passing through the Alkaline metal cell. The Alkaline metal cell includes a first member, a second member, a cell internal portion, and an Alkaline metal raw material. In the first member, a first glass substrate is bonded on a second surface of a first substrate where a first opening part is formed. In the second member, a second glass substrate is bonded to a fourth surface of a second substrate where a second opening part is formed. The cell internal portion is formed by the first opening part and the second opening part by bonding the first surface to the third surface. The Alkaline metal raw material is enclosed by the cell internal portion.

摘要翻译： 公开了一种原子振荡器，其包括碱金属电池，向碱金属电池照射激光束的光源和检测通过碱金属电池的光的光检测器。 碱金属电池包括第一构件，第二构件，电池内部部分和碱金属原料。 在第一构件中，第一玻璃基板接合在形成第一开口部的第一基板的第二表面上。 在第二构件中，将第二玻璃基板接合到形成第二开口部的第二基板的第四表面。 通过将第一表面粘合到第三表面，由第一开口部和第二开口部形成电池内部。 碱金属原料被电池内部包围。

公开(公告)号：US08830287B2

公开(公告)日：2014-09-09

申请号：US13930409

申请日：2013-06-28

申请人： Shunichi Sato ,  Akihiro Itoh ,  Hiroyoshi Shouji ,  Yoshinori Hayashi ,  Daisuke Ichii ,  Kei Hara ,  Mitsumi Fujii

发明人： Shunichi Sato ,  Akihiro Itoh ,  Hiroyoshi Shouji ,  Yoshinori Hayashi ,  Daisuke Ichii ,  Kei Hara ,  Mitsumi Fujii

IPC分类号： B41J2/45 ,  H01S5/42 ,  B82Y20/00 ,  B41J2/47 ,  H01S5/183 ,  H01S5/343 ,  G02B26/12

CPC分类号： B41J2/45 ,  B41J2/473 ,  B82Y20/00 ,  G02B26/123 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3432 ,  H01S5/423

摘要： A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.

摘要翻译： 表面发射激光器阵列包括以二维阵列的形式布置的多个表面发射激光二极管元件，其中垂直于从第一方向延伸的直线绘制的多条直线从多个 在与第一方向垂直的第二方向上排列的表面发射激光二极管元件在第一方向上以大致相等的间隔形成，多个表面发射激光二极管元件在第一方向上对齐，间隔设置为基准 并且其中在所述第一方向上排列的所述表面发射激光二极管元件的数量小于在所述第二方向上排列的所述表面发射激光二极管元件的数量。

公开(公告)号：US08774242B2

公开(公告)日：2014-07-08

申请号：US13466217

申请日：2012-05-08

申请人： Akihiro Itoh ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani

发明人： Akihiro Itoh ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani

IPC分类号： H01S5/00

CPC分类号： G03G15/04072 ,  B82Y20/00 ,  G02B26/123 ,  H01S5/0014 ,  H01S5/0421 ,  H01S5/0655 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/18355 ,  H01S5/18394 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3436 ,  H01S5/423 ,  H01S2301/185

摘要： A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to be manufactured with high yield rate.

摘要翻译： 表面发射激光二极管包括衬底，形成在衬底上的下反射器，形成在下反射器上的有源层，形成在有源层上的上反射器，限流结构，包括由绝缘区包围的电流限制区。 电流限制结构设置在上反射器中或有源层和上反射器之间，并且形成在上反射器上的上电极包括对应于沿与第一方向垂直的第一方向发射光的发射区域的孔 基材表面。 包括电流限制区域的发射区域和电流限制结构被选择性地构造成获得高单横模，稳定偏振方向，各向同性束横截面和小发散角，同时允许以高产率制造装置。

公开(公告)号：US08743924B2

公开(公告)日：2014-06-03

申请号：US13764167

申请日：2013-02-11

申请人： Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

发明人： Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

IPC分类号： H01S5/00

CPC分类号： H01S5/343 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/18383 ,  H01S5/2205 ,  H01S5/423

摘要： In a surface-emission laser diode, there is provided, between an active layer and a semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components such that the semiconductor layer containing Al, In and P as major components is provided adjacent to the semiconductor layer that contains Al, Ga and As as major components. Further, an interface between the semiconductor layer containing Al, Ga and As as major components and the semiconductor layer containing Al, In and P as major components is coincident to a location of a node of electric field strength distribution.

摘要翻译： 在表面发射激光二极管中，在有源层和含有Al，Ga和As作为主要成分的半导体层之间提供包含Al，In和P作为主要成分的半导体层，使得含有Al 作为主要成分，以与Al，Ga，As为主要成分的半导体层相邻配置In和P为主要成分。 此外，含有Al，Ga和As作为主要成分的半导体层与以Al，In和P为主要成分的半导体层之间的界面与电场强度分布的节点的位置一致。

公开(公告)号：US08736652B2

公开(公告)日：2014-05-27

申请号：US13379160

申请日：2011-05-18

申请人： Kazuhiro Harasaka ,  Shunichi Sato ,  Masahiro Hayashi ,  Akihiro Itoh ,  Katsunari Hanaoka

发明人： Kazuhiro Harasaka ,  Shunichi Sato ,  Masahiro Hayashi ,  Akihiro Itoh ,  Katsunari Hanaoka

IPC分类号： B41J2/45 ,  H01S5/00

CPC分类号： G03G15/04 ,  B41J2/442 ,  B41J2/471 ,  G02B26/10 ,  H01S5/18 ,  H01S5/18313 ,  H01S5/18355 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/3202 ,  H01S5/423

摘要： A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.

摘要翻译： 表面发射激光器件包括设置在发射区域中并被配置为使得在周边部分处的反射率与发射区域中的中心部分的反射率不同的透明电介质层。 在表面发射激光器件中，接触层的厚度在具有较高反射率的区域和在发射区域中反射率相对较低的区域之间是不同的。 接触层设置在上层多层膜反射镜的高折射率层上，并且具有较低反射率的区域中的高折射率层和接触层的总光学厚度偏离了 从发射区域发射的激光的四分之一振荡波长。

公开(公告)号：US08735716B2

公开(公告)日：2014-05-27

申请号：US13547939

申请日：2012-07-12

申请人： Nobuaki Nagao ,  Takahiro Hamada ,  Akihiro Itoh

发明人： Nobuaki Nagao ,  Takahiro Hamada ,  Akihiro Itoh

IPC分类号： H01L31/0392 ,  H01L21/02 ,  C30B25/18 ,  C23C16/30

CPC分类号： H01L31/0392 ,  C23C16/303 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

摘要翻译： 太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层 形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。 无定形碳层通过氧化石墨基材的表面而获得。

公开(公告)号：US08691782B2

公开(公告)日：2014-04-08

申请号：US13254159

申请日：2011-07-28

申请人： Tadaaki Ohgi ,  Hirotake Hayashi ,  Hisao Shirohzu ,  Tomohiro Hamasaki ,  Akihiro Itoh ,  Hiroshi Suzuki

发明人： Tadaaki Ohgi ,  Hirotake Hayashi ,  Hisao Shirohzu ,  Tomohiro Hamasaki ,  Akihiro Itoh ,  Hiroshi Suzuki

IPC分类号： A01N43/04 ,  C07H19/044 ,  C12Q1/68 ,  C12N15/63 ,  C07H21/04

CPC分类号： C12N15/113 ,  A61K31/7105 ,  A61K31/7125 ,  C07F9/22 ,  C12N15/111 ,  C12N15/1136 ,  C12N2310/14 ,  C12N2310/318 ,  C12N2330/30 ,  C12N2310/531

摘要： Provided is a novel nucleic acid molecule that can be produced easily and efficiently and can inhibit the expression of a gene. The nucleic acid molecule is a single-stranded nucleic acid molecule including an expression inhibitory sequence that inhibits expression of a target gene. The single-stranded nucleic acid molecule includes: a region (X); a linker region (Lx); and a region (Xc). The linker region (Lx) is linked between the regions (Xc) and (Xc). The region (Xc) is complementary to the region (X). At least one of the regions (X) and (Xc) includes the expression inhibitory sequence. The linker region (Lx) has a non-nucleotide structure including at least one of a pyrrolidine skeleton and a piperidine skeleton. According to this single-stranded nucleic acid molecule, it is possible to inhibit the expression of the target gene.

摘要翻译： 提供了可以容易且有效地产生并可以抑制基因表达的新型核酸分子。 核酸分子是包含抑制靶基因表达的表达抑制性序列的单链核酸分子。 单链核酸分子包括：区域（X）; 连接区（Lx）; 和区域（Xc）。 连接区域（Lx）连接在区域（X）和（Xc）之间。 区域（Xc）与区域（X）互补。 区域（X）和（Xc）中的至少一个包括表达抑制序列。 接头区（Lx）具有包含吡咯烷骨架和哌啶骨架中的至少一种的非核苷酸结构。 根据该单链核酸分子，可以抑制靶基因的表达。

公开(公告)号：US20140064313A1

公开(公告)日：2014-03-06

申请号：US13764167

申请日：2013-02-11

申请人： Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

发明人： Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

IPC分类号： H01S5/343

CPC分类号： H01S5/343 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/18383 ,  H01S5/2205 ,  H01S5/423

摘要： In a surface-emission laser diode, there is provided, between an active layer and a semiconductor layer that contains AI, Ga and As as major components, a semiconductor layer containing AI, In and P as major components such that the semiconductor layer containing AI, In and P as major components is provided adjacent to the semiconductor layer that contains AI, Ga and As as major components. Further, an interface between the semiconductor layer containing AI, Ga and As as major components and the semiconductor layer containing AI, In and P as major components is coincident to a location of a node of electric field strength distribution.

摘要翻译： 在面发光激光二极管中，主要成分为Al，Ga，As作为主成分的有源层与半导体层之间设有包含Al，In和P作为主要成分的半导体层， 以作为主要成分的含有Al，Ga，As的半导体层附近设置In和P作为主要成分。 此外，含有Al，Ga和As作为主要成分的半导体层和含有Al，In和P作为主要成分的半导体层之间的界面与电场强度分布的节点的位置一致。

公开(公告)号：US20130297788A1

公开(公告)日：2013-11-07

申请号：US13977849

申请日：2011-03-30

申请人： Akihiro Itoh

发明人： Akihiro Itoh

IPC分类号： H04L12/26

CPC分类号： H04L43/0876 ,  G06F16/113

摘要： In a computer system, plural computers perform an analysis processing of a data set including plural data configured by a key and a data value. Each of the computers retains division information which manages a division position key indicating a division position of a division area obtained by dividing the data set for every predetermined key range, for every data set, all division position keys included in the division information of each of the data sets are the same. When a new data set is stored in the file system, the computer system determines whether there is a target area which is the division area having a data size larger than a predetermined threshold value, based on a data size of each of the division areas after storing the new data set, and if the target area is present, it divides the target area into plural new division areas.

摘要翻译： 在计算机系统中，多个计算机执行包括由密钥和数据值配置的多个数据的数据集的分析处理。 每个计算机保存分割信息，该分割信息管理分配位置键，其指示通过对于每个数据集划分每个预定键范围的数据集而获得的划分区域的分割位置，包括在每个数据集的分割信息中的所有分割位置键 数据集是相同的。 当在文件系统中存储新的数据集时，计算机系统基于每个后面的划分区域的数据大小，确定是否存在具有大于预定阈值的数据大小的划分区域的目标区域 存储新数据集，并且如果存在目标区域，则将目标区域划分为多个新的划分区域。

公开(公告)号：US20130286150A1

公开(公告)日：2013-10-31

申请号：US13930409

申请日：2013-06-28

申请人： Shunichi SATO ,  Akihiro ITOH ,  Hiroyoshi SHOUJI ,  Yoshinori HAYASHI ,  Daisuke ICHII ,  Kei HARA ,  Mitsumi FUJII

发明人： Shunichi SATO ,  Akihiro ITOH ,  Hiroyoshi SHOUJI ,  Yoshinori HAYASHI ,  Daisuke ICHII ,  Kei HARA ,  Mitsumi FUJII

IPC分类号： B41J2/45

CPC分类号： B41J2/45 ,  B41J2/473 ,  B82Y20/00 ,  G02B26/123 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3432 ,  H01S5/423

摘要： A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.

摘要翻译： 表面发射激光器阵列包括以二维阵列的形式布置的多个表面发射激光二极管元件，其中垂直于从第一方向延伸的直线绘制的多条直线从多个 在与第一方向垂直的第二方向上排列的表面发射激光二极管元件在第一方向上以大致相等的间隔形成，多个表面发射激光二极管元件在第一方向上对准，间隔设置为基准 并且其中在所述第一方向上排列的所述表面发射激光二极管元件的数量小于在所述第二方向上排列的所述表面发射激光二极管元件的数量。