SOI WAFER AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SOI WAFER AND METHOD OF MANUFACTURING THE SAME 有权
    SOI波形及其制造方法

    公开(公告)号:US20130221439A1

    公开(公告)日:2013-08-29

    申请号:US13673263

    申请日:2012-11-09

    IPC分类号: H01L29/02 H01L21/20

    摘要: An SOI wafer according to the present invention includes a support substrate and an insulating layer formed on the support substrate, a predetermined cavity pattern being formed on one of main surfaces of the support substrate on which the insulating layer is provided, further includes an active semiconductor layer formed on the insulating layer with the cavity pattern being closed, the active semiconductor layer not being formed in an outer peripheral portion of the support substrate, and further includes a plurality of superposition mark patterns formed in the outer peripheral portion on the one of the main surfaces of the support substrate for specifying a position of the cavity pattern.

    摘要翻译: 根据本发明的SOI晶片包括支撑基板和形成在支撑基板上的绝缘层,在其上设置绝缘层的支撑基板的一个主表面上形成预定的空腔图案,还包括有源半导体 所述绝缘层上形成有所述空腔图案的绝缘层,所述有源半导体层不形成在所述支撑基板的外周部,并且还包括形成在所述支撑基板的所述一个的外周部的多个叠加标记图案 用于指定空腔图案的位置的支撑基板的主表面。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20130292740A1

    公开(公告)日:2013-11-07

    申请号:US13802538

    申请日:2013-03-13

    IPC分类号: H01L49/02 H01L27/06

    摘要: In a region located between a collector electrode and a semiconductor substrate, there are a portion where a hollow region is located and a portion where no hollow region is located. Between the collector electrode and the portion where no hollow region is located in the semiconductor substrate, a floating silicon layer electrically isolated by insulating films is formed.

    摘要翻译: 在位于集电极和半导体基板之间的区域中,存在中空区域所在的部分和没有中空区域的部分。 在集电极与半导体衬底中没有中空区域的部分之间,形成通过绝缘膜电隔离的浮动硅层。

    PIXEL CIRCUIT AND DISPLAY DEVICE
    4.
    发明申请
    PIXEL CIRCUIT AND DISPLAY DEVICE 有权
    像素电路和显示设备

    公开(公告)号:US20120162164A1

    公开(公告)日:2012-06-28

    申请号:US13412655

    申请日:2012-03-06

    IPC分类号: G09G5/00 G09G3/30

    摘要: A pixel circuit able to prevent a spread of the terminal voltages of drive transistors inside a panel and in turn able to reliably prevent deterioration of uniformity, wherein a source of a TFT serving as a drive transistor is connected to an anode of a light emitting element, a drain is connected to a power source potential, a capacitor is connected between a gate and source of the TFT, and a source potential of the TFT is connected to a fixed potential through a TFT serving as a switch transistor and wherein pixel circuit lines are connected by an upper line and bottom line and are arranged in parallel with pixel circuit power source voltage lines so as not to have intersecting parts.

    摘要翻译: 一种像素电路,其能够防止驱动晶体管在面板内部的端子电压的扩展,从而可以可靠地防止均匀性的劣化,其中用作驱动晶体管的TFT的源极连接到发光元件的阳极 漏极连接到电源电位,电容器连接在TFT的栅极和源极之间,TFT的源极电位通过用作开关晶体管的TFT连接到固定电位,并且其中像素电路线 通过上线和底线连接并且与像素电路电源电压线并联布置,以便不具有相交部分。

    DISPLAY APPARATUS AND ELECTRONIC APPARATUS
    5.
    发明申请
    DISPLAY APPARATUS AND ELECTRONIC APPARATUS 有权
    显示设备和电子设备

    公开(公告)号:US20120044130A1

    公开(公告)日:2012-02-23

    申请号:US13285680

    申请日:2011-10-31

    IPC分类号: G09G3/30

    摘要: A display apparatus includes a pixel unit in which pixels are arranged in a matrix pattern; and a driving circuit for driving the pixel unit. Each of the pixels includes a signal level holding capacitor; a first transistor that is turned on/off in response to a writing signal and via which one end of the signal level holding capacitor is connected to a signal line; a second transistor having one end of the signal level holding capacitor connected to a gate thereof and the other end of the signal level holding capacitor connected to a source thereof; a current-driven self-light-emitting element whose cathode is held at a cathode potential and whose anode is connected to the source of the second transistor; a third transistor that is turned on/off in response to a driving pulse signal; and a fourth transistor that is turned on/off in response to a control signal.

    摘要翻译: 显示装置包括像素单元,其中像素以矩阵图案排列; 以及用于驱动像素单元的驱动电路。 每个像素包括信号电平保持电容器; 第一晶体管,其响应于写入信号而导通/截止,并且信号电平保持电容器的一端连接到信号线; 第二晶体管,其信号电平保持电容器的一端连接到其栅极,并且信号电平保持电容器的另一端连接到其源极; 电流驱动的自发光元件,其阴极保持在阴极电位并且其阳极连接到第二晶体管的源极; 响应于驱动脉冲信号而导通/截止的第三晶体管; 以及响应于控制信号而导通/截止的第四晶体管。

    LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE
    6.
    发明申请
    LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE 失效
    液晶组合物和液晶显示装置

    公开(公告)号:US20090065740A1

    公开(公告)日:2009-03-12

    申请号:US12210040

    申请日:2008-09-12

    IPC分类号: C09K19/30

    摘要: A liquid crystal composition having a negative dielectric anisotropy that includes two components, wherein the first component is at least one compound selected from the group of compounds represented by formulas (1-1) and (1-2), and the second component is at least one compound selected from the group of compounds represented by formulas (2-1) to (2-3): wherein, for example, R1, R2, R3 and R4 are each alkyl having 1 to 12 carbons; X1 and X2 are each fluorine; ring A, ring B, ring C, ring D, ring E, ring F and ring G are each 1,4-cyclohexylene or 1,4-phenylene; and Z1 is a single bond.

    摘要翻译: 一种具有负介电各向异性的液晶组合物,其包含两种成分,其中第一成分为选自式(1-1)和(1-2)所示的化合物的族群中的至少一种化合物,第二成分为 至少一种选自由式(2-1)至(2-3)表示的化合物的化合物:其中,例如,R 1,R 2,R 3和R 4各自为具有1至12个碳的烷基; X1和X2各自为氟; 环A,环B,环C,环D,环E,环F和环G各自为1,4-亚环己基或1,4-亚苯基; Z1是单键。

    Liquid Crystal Composition and Liquid Crystal Display Device
    7.
    发明申请
    Liquid Crystal Composition and Liquid Crystal Display Device 有权
    液晶组合物和液晶显示装置

    公开(公告)号:US20110037912A1

    公开(公告)日:2011-02-17

    申请号:US12829238

    申请日:2010-07-01

    IPC分类号: G02F1/133 C09K19/30 C09K19/34

    摘要: The subject is to provide a liquid crystal composition that satisfies at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a low viscosity, a suitable optical anisotropy, a negatively large dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to heat, or that is suitably balanced regarding two or more characteristics. The subject is to provide an AM device that has a short response time, a high voltage holding ratio, a high contrast ratio, a long service life and so forth.The invention provides a liquid crystal composition having a negative dielectric anisotropy that contains a specific compound having a negatively large dielectric anisotropy as a first component, and a specific two-ring compound having a low viscosity as a second component, and provides a liquid crystal display device containing the composition.

    摘要翻译: 本发明提供一种液晶组合物,其满足向列相的最高最高温度,向列相的低最低温度,低粘度,适当的光学各向异性,负大的介电各向异性等特性中的至少一种 ,比电阻大,对紫外线的稳定性高,对热的稳定性高,或者两个以上的特性适当平衡。 本发明的目的是提供一种具有短的响应时间,高电压保持率,高对比度,长使用寿命等的AM器件。 本发明提供具有负介电各向异性的液晶组合物,其具有作为第一成分的具有负的大的介电各向异性的特定化合物和作为第二成分的低粘度的特定的二环化合物,并且提供液晶显示 装置含有组成。

    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
    8.
    发明申请
    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号:US20100208525A1

    公开(公告)日:2010-08-19

    申请号:US12697505

    申请日:2010-02-01

    IPC分类号: G11C16/06

    CPC分类号: G11C16/28

    摘要: A non-volatile semiconductor memory device includes a sense amplifier, first and second bit lines that are connected to the sense amplifier, a first memory cell column that is connected to the first bit line, the first memory cell column being formed by a plurality of MONOS type transistors, a first constant current source that is connected to the second bit line, the first constant current source generating a reference current for the first memory cell column, and a first switch that is provided between the first constant current source and the second bit line, the first switch being formed by a MONOS type transistor.

    摘要翻译: 非易失性半导体存储器件包括读出放大器,连接到读出放大器的第一和第二位线,连接到第一位线的第一存储器单元列,第一存储单元列由多个 MONOS型晶体管,连接到第二位线的第一恒定电流源,产生第一存储单元列的参考电流的第一恒定电流源和设置在第一恒定电流源与第二恒定电流源之间的第一开关, 第一开关由MONOS型晶体管形成。