公开(公告)号：US20090008652A1

公开(公告)日：2009-01-08

申请号：US11908539

申请日：2006-03-20

申请人： Kazumasa Ueda ,  Naohiro Nishikawa ,  Yoshihiko Tsuchida

发明人： Kazumasa Ueda ,  Naohiro Nishikawa ,  Yoshihiko Tsuchida

IPC分类号： H01L21/28 ,  H01L29/12

CPC分类号： C23C16/30 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007

摘要： The present invention provides a free-standing substrate, a method for producing the same and a semiconductor light-emitting device. The free-standing substrate comprises a semiconductor layer and inorganic particles, wherein the inorganic particles are included in the semiconductor layer. The method for producing a free-standing substrate comprises the steps of: (a) placing inorganic particles on a substrate, (b) growing a semiconductor layer thereon, and (c) separating the semiconductor layer from the substrate, in that order. The semiconductor light-emitting device comprises the free-standing substrate, a conductive layer, a light-emitting device, and electrodes.

摘要翻译： 本发明提供一种自立式基板，其制造方法和半导体发光装置。 独立基板包括半导体层和无机颗粒，其中无机颗粒包括在半导体层中。 制造独立基板的方法包括以下步骤：（a）将无机颗粒放置在基板上，（b）在其上生长半导体层，以及（c）依次将半导体层与基板分离。 半导体发光器件包括独立的衬底，导电层，发光器件和电极。

公开(公告)号：US20090236629A1

公开(公告)日：2009-09-24

申请号：US11922497

申请日：2006-07-05

申请人： Naohiro Nishikawa ,  Kazumasa Ueda ,  Kenji Kasahara ,  Yoshihiko Tsuchida

发明人： Naohiro Nishikawa ,  Kazumasa Ueda ,  Kenji Kasahara ,  Yoshihiko Tsuchida

IPC分类号： H01L33/00 ,  H01L21/308 ,  H01L29/06

CPC分类号： H01L21/3065 ,  H01L33/007 ,  H01L33/22

摘要： The present invention provides a substrate and a semiconductor light emitting device. Convexes having a curved surface are formed on the substrate. The semiconductor light emitting device comprises a substrate on which convexes having a curved surface are formed and a semiconductor layer on the substrate.

摘要翻译： 本发明提供了一种基板和半导体发光器件。 在基板上形成具有曲面的凸部。 半导体发光器件包括其上形成有弯曲表面的凸起的衬底和在衬底上的半导体层。

公开(公告)号：US08053811B2

公开(公告)日：2011-11-08

申请号：US11920563

申请日：2006-05-02

申请人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Naohiro Nishikawa

发明人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Naohiro Nishikawa

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01S2304/12

摘要： A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).

摘要翻译： 提供3-5族氮化物半导体多层基板（1）及其制造方法。 半导体层（12）形成在基底（11）上，在半导体层（12）上形成掩模（13）。 然后，通过选择性生长形成3-5族氮化物半导体结晶层（14）后，分离3-5族氮化物半导体结晶层（14）和基底基板（11）。 半导体层（12）的结晶度低于3-5族氮化物半导体晶体层（14）的结晶度。

公开(公告)号：US20090085165A1

公开(公告)日：2009-04-02

申请号：US11920563

申请日：2006-05-02

申请人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Naohiro Nishikawa

发明人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Naohiro Nishikawa

IPC分类号： H01L21/20 ,  H01L29/20

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01S2304/12

摘要： A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).

摘要翻译： 提供3-5族氮化物半导体多层基板（1）及其制造方法。 半导体层（12）形成在基底（11）上，在半导体层（12）上形成掩模（13）。 然后，通过选择性生长形成3-5族氮化物半导体结晶层（14）后，分离3-5族氮化物半导体结晶层（14）和基底基板（11）。 半导体层（12）的结晶度低于3-5族氮化物半导体晶体层（14）的结晶度。

公开(公告)号：US20090093122A1

公开(公告)日：2009-04-09

申请号：US12224984

申请日：2007-03-08

申请人： Kazumasa Ueda ,  Naohiro Nishikawa ,  Kenji Kasahara

发明人： Kazumasa Ueda ,  Naohiro Nishikawa ,  Kenji Kasahara

IPC分类号： H01L21/32

CPC分类号： H01L33/12 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0079 ,  H01S5/0213 ,  H01S5/32341 ,  H01S2304/12

摘要： The present invention provides a method for producing a group III-V nitride semiconductor substrate. The method for producing a group III-V nitride semiconductor substrate comprises the steps of (I-1) to (I-6): (I-1) placing inorganic particles on a template, (I-2) dry-etching the template by using the inorganic particles as an etching mask, to form convexes on the template, (I-3) forming a coating film for an epitaxial growth mask on the template, (I-4) removing the inorganic particles to form an exposed surface of the template, (I-5) growing a group III-V nitride semiconductor on the exposed surface of the template, and (I-6) separating the group III-V nitride semiconductor from the template.

摘要翻译： 本发明提供一种III-V族氮化物半导体衬底的制造方法。 制备III-V族氮化物半导体衬底的方法包括以下步骤：（I-1）至（I-6）：（I-1）将无机颗粒置于模板上，（I-2）干蚀刻模板 通过使用无机颗粒作为蚀刻掩模，在模板上形成凸起（I-3），在模板上形成外延生长掩模用涂膜（I-4），除去无机颗粒，形成曝光表面 模板（I-5）在模板的暴露表面上生长III-V族氮化物半导体，以及（I-6）将III-V族氮化物半导体与模板分离。

公开(公告)号：US20080087881A1

公开(公告)日：2008-04-17

申请号：US11667978

申请日：2005-11-22

申请人： Kazumasa Ueda ,  Naohiro Nishikawa

发明人： Kazumasa Ueda ,  Naohiro Nishikawa

IPC分类号： H01L51/50 ,  H01L51/56

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L51/5048 ,  H01L51/5268

摘要： The present invention provides a semiconductor multilayer substrate used as a high-brightness semiconductor light-emitting device, a method for producing the same, and a light-emitting device. The semiconductor multilayer substrate comprises a semiconductor layer containing an inorganic particle made of substance other than metal nitrides. The method for producing a semiconductor multilayer substrate comprises the steps (a) and (b) of: (a) placing an inorganic particle made of substance other than metal nitrides on a substrate and (b) growing a semiconductor layer.

摘要翻译： 本发明提供了用作高亮度半导体发光器件的半导体多层衬底，其制造方法和发光器件。 半导体多层基板包括含有由金属氮化物以外的物质制成的无机粒子的半导体层。 制造半导体多层基板的方法包括以下步骤（a）和（b）：（a）将由金属氮化物以外的物质制成的无机颗粒放置在基板上，和（b）生长半导体层。

公开(公告)号：US20110119674A1

公开(公告)日：2011-05-19

申请号：US13012054

申请日：2011-01-24

申请人： Naohiro Nishikawa

发明人： Naohiro Nishikawa

IPC分类号： G06F9/46

CPC分类号： G06F9/5066

摘要： A thread status managing unit organizes a plurality of threads into groups and manages the status of the thread groups. A ready queue queues thread groups in a ready state or a running state in the order of priority and, within the same priority level, in the FIFO order. An assignment list generating unit sequentially retrieves the thread groups from the ready queue. The assignment list appends a retrieved thread group to a thread assignment list only when all threads belonging to the retrieved thread group are assignable to the respective processors at the same time. A thread assigning unit assigns all threads belonging to the thread groups stored in the thread assignment list to the respective processors.

摘要翻译： 线程状态管理单元将多个线程组织成组并管理线程组的状态。 准备好的队列将处于就绪状态或运行状态的线程组以优先级顺序排队，并且在同一优先级别内以FIFO顺序排队。 分配表生成单元从就绪队列顺序地检索线程组。 只有当属于检索到的线程组的所有线程可以同时分配给相应的处理器时，分配列表将检索到的线程组添加到线程分配列表。 线程分配单元将属于线程分配列表中存储的线程组的所有线程分配给各个处理器。

公开(公告)号：US07913257B2

公开(公告)日：2011-03-22

申请号：US11291073

申请日：2005-11-30

申请人： Naohiro Nishikawa

发明人： Naohiro Nishikawa

IPC分类号： G06F9/46

CPC分类号： G06F9/5066

摘要： A thread status managing unit organizes a plurality of threads into groups and manages the status of the thread groups. A ready queue queues thread groups in a ready state or a running state in the order of priority and, within the same priority level, in the FIFO order. An assignment list generating unit sequentially retrieves the thread groups from the ready queue. The assignment list appends a retrieved thread group to a thread assignment list only when all threads belonging to the retrieved thread group are assignable to the respective processors at the same time. A thread assigning unit assigns all threads belonging to the thread groups stored in the thread assignment list to the respective processors.

摘要翻译： 线程状态管理单元将多个线程组织成组并管理线程组的状态。 准备好的队列将处于就绪状态或运行状态的线程组以优先级顺序排队，并且在同一优先级别内以FIFO顺序排队。 分配表生成单元从就绪队列顺序地检索线程组。 只有当属于检索到的线程组的所有线程可以同时分配给相应的处理器时，分配列表将检索到的线程组添加到线程分配列表。 线程分配单元将属于线程分配列表中存储的线程组的所有线程分配给各个处理器。

公开(公告)号：US10340375B2

公开(公告)日：2019-07-02

申请号：US12527142

申请日：2008-02-12

申请人： Masahiko Hata ,  Hiroyuki Sazawa ,  Naohiro Nishikawa

发明人： Masahiko Hata ,  Hiroyuki Sazawa ,  Naohiro Nishikawa

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L29/778 ,  H01L29/207 ,  H01L29/66 ,  H01L21/02 ,  H01L29/20

摘要： The present invention provides an epitaxial substrate for field effect transistor. In the epitaxial substrate for field effect transistor, a nitride-based Group III-V semiconductor epitaxial crystal containing Ga is interposed between the ground layer and the operating layer, and the nitride-based Group III-V semiconductor epitaxial crystal includes the following (i), (ii) and (iii). (i) a first buffer layer containing Ga or Al and containing a high resistivity crystal layer having added thereto compensation impurity element present in the same period as Ga in the periodic table and having small atomic number; (ii) a second buffer layer containing Ga or Al, laminated on the operating layer side of the first buffer layer; and (iii) a high purity epitaxial crystal layer containing acceptor impurities in a slight amount such that non-addition or depletion state can be maintained, provided between the high resistivity layer and the operating layer.

公开(公告)号：US20110302587A1

公开(公告)日：2011-12-08

申请号：US13142156

申请日：2009-09-29

申请人： Naohiro Nishikawa ,  Seiji Murata

发明人： Naohiro Nishikawa ,  Seiji Murata

IPC分类号： G06F9/46

CPC分类号： G06F9/4881 ,  G06F2209/483

摘要： A system-level management unit generates a system processing and makes a processing request to a task allocation unit of a user-level management unit. The task allocation unit schedules the system processing according to a procedure of an introduced user-level scheduling. A processing unit assigned to execute the system processing sends a notification of acceptability of the system processing to a main processing unit, by halts an application task in appropriate timing or when the processing of the current task is completed. When the notification is received within the time limit for execution, the system-level management unit has the processing unit start the system processing.

摘要翻译： 系统级管理单元生成系统处理并对用户级管理单元的任务分配单元进行处理请求。 任务分配单元根据引入的用户级调度的过程调度系统处理。 分配用于执行系统处理的处理单元通过在适当的定时中或当当前任务的处理完成时停止应用任务，向主处理单元发送系统处理的可接受性的通知。 当在执行期限内收到通知时，系统级管理单元具有开始系统处理的处理单元。