公开(公告)号：US5310453A

公开(公告)日：1994-05-10

申请号：US17379

申请日：1993-02-12

申请人： Kazuo Fukasawa ,  Ryo Nonaka ,  Kousuke Imafuku

发明人： Kazuo Fukasawa ,  Ryo Nonaka ,  Kousuke Imafuku

IPC分类号： H01L21/00 ,  H01L21/683 ,  B44C1/22 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/67098 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/2001 ,  H01J2237/334

摘要： Prior to plasma etching, a wafer is placed on conductive support pins which extend through an electrostatic chuck. The electrostatic chuck is disposed on a susceptor incorporating a cooling jacket. A potential for electrostatic attraction is applied to the electrostatic chuck. The support pins are lowered while they are grounded, thus placing the wafer on the electrostatic chuck. Subsequently, the support pins are retracted into the electrostatic chuck to release contact between the wafer and themselves. A heat medium gas is then supplied between the wafer and the electrostatic chuck to improve the heat transfer rate therebetween. A plasma is then generated in a process chamber, and the wafer is etched by using the plasma. Since the heat transfer rate between the wafer and the electrostatic chuck is improved before the generation of the plasma, damage to the wafer due to heat can be prevented, and the starting time required to start an etching process is shortened.

摘要翻译： 在等离子体蚀刻之前，将晶片放置在延伸穿过静电卡盘的导电支撑销上。 静电吸盘设置在包含冷却套的基座上。 对静电吸盘施加静电吸引的可能性。 支撑销在接地时降低，从而将晶片放置在静电卡盘上。 随后，支撑销缩回到静电卡盘中，以释放晶片与它们之间的接触。 然后在晶片和静电卡盘之间提供热介质气体，以提高它们之间的传热速率。 然后在处理室中产生等离子体，并且通过使用等离子体来蚀刻晶片。 由于在产生等离子体之前提高了晶片和静电卡盘之间的传热速率，所以可以防止由于热而对晶片造成的损坏，并且缩短了开始蚀刻工艺所需的开始时间。

公开(公告)号：US08950469B2

公开(公告)日：2015-02-10

申请号：US12902225

申请日：2010-10-12

申请人： Yasuharu Sasaki ,  Ryo Nonaka ,  Nobuyuki Nagayama

发明人： Yasuharu Sasaki ,  Ryo Nonaka ,  Nobuyuki Nagayama

IPC分类号： B31F1/00 ,  B44C1/175 ,  B29C65/00 ,  H01L21/67

CPC分类号： H01L21/67248 ,  H01L21/67109

摘要： A temperature control system includes a heat transfer medium supply configured to supply a first heat transfer medium of a first temperature into a heat transfer medium path; at least one heat transfer medium storage provided between the heat transfer medium path and the heat transfer medium supply and configured to store a second heat transfer medium of a second temperature higher than the first temperature; a heat transfer medium supply control device provided between the heat transfer medium supply and the heat transfer medium path and between the heat transfer medium storage and the heat transfer medium path and configured to stop a supply of the first heat transfer medium into the heat transfer medium path from the heat transfer medium supply and to supply the second heat transfer medium into the heat transfer medium path from the heat transfer medium storage when a heating unit generates heat.

摘要翻译： 温度控制系统包括：传热介质供给，其构造成将第一温度的第一传热介质供给到传热介质路径中; 设置在传热介质路径和传热介质之间的至少一个传热介质存储器供应并构造成存储第二温度高于第一温度的第二传热介质; 传热介质供给控制装置，设置在所述传热介质供给与所述传热介质路径之间，以及所述传热介质储存部和所述传热介质路径之间，并且被配置为停止向所述传热介质供给所述第一传热介质 并且当加热单元产生热量时，从传热介质储存器将第二传热介质供应到传热介质路径中。

公开(公告)号：US20140311728A1

公开(公告)日：2014-10-23

申请号：US14233247

申请日：2012-07-19

申请人： Ryo Nonaka

发明人： Ryo Nonaka

IPC分类号： H01L21/67

CPC分类号： H01L21/67103 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

摘要： A temperature of only a part in a surface of a mounting table can be set to be higher than or lower than a set temperature of an entire surface of the mounting table. A main flow path 320 formed within the mounting table 200 to be arranged over the entire surface thereof; an auxiliary flow path 330 formed within the mounting table to be arranged in a part of the surface thereof; and a temperature control medium circulating unit that supplies and circulates a temperature control medium adjusted to have a set temperature into and through the main flow path, allows the temperature control medium to be branched, and supplies and circulates the branched temperature control medium into and through the auxiliary flow path after adjusting a temperature of the branched temperature control medium to be a temperature higher than or lower than the set temperature are provided.

摘要翻译： 可以将安装台的表面中的仅一部分的温度设定为高于或低于安装台的整个表面的设定温度。 形成在安装台200的整个表面上的主流路320; 形成在安装台中的辅助流路330，以布置在其表面的一部分中; 以及温度控制介质循环单元，其将调节为具有设定温度的温度控制介质供给并循环通过主流路，允许温度控制介质分支，并将分支温度控制介质供给并循环 提供将分支温度控制介质的温度调节为高于或低于设定温度的温度的辅助流路。

公开(公告)号：US07988062B2

公开(公告)日：2011-08-02

申请号：US12261341

申请日：2008-10-30

申请人： Ryo Nonaka ,  Koichi Murakami

发明人： Ryo Nonaka ,  Koichi Murakami

IPC分类号： G05D23/00 ,  H01L21/306

CPC分类号： G05D23/1934

摘要： A temperature control device for a target substrate includes a mounting table having temperature control members respectively provided in temperature systems to control temperatures of regions of the target substrate to respective predetermined temperature levels; circulation channels through which fluids passing through the temperature control members flow; and heating channels each for flowing therein a heated fluid having a higher temperature compared to the fluids circulating in the circulation channels. The device further includes cooling channels each for flowing therein a cooled fluid having a lower temperature compared to the fluids circulating in the circulation channels; and joining units that join the circulation channels to build the respective temperature control systems, the joining units having flow rate control units that controls flow rate ratios of the fluids supplied from the respective channels to the temperature control members.

摘要翻译： 目标基板的温度控制装置包括：安装台，其具有温度控制部件，温度控制部件分别设置在温度系统中，以将目标基板的区域的温度控制到各自的预定温度水平; 流过温度控制构件的流体流过的循环通道; 并且每个加热通道在其中流动与在循环通道中循环的流体相比具有较高温度的加热流体。 该装置还包括冷却通道，每个用于在其中流动具有与在循环通道中循环的流体相比具有较低温度的冷却流体的冷却通道; 以及接合单元，其连接循环通道以构建各自的温度控制系统，所述接合单元具有流量控制单元，其控制从各个通道供应到温度控制构件的流体的流量比。

公开(公告)号：US07230202B2

公开(公告)日：2007-06-12

申请号：US10927587

申请日：2004-08-27

申请人： Daisuke Hayashi ,  Kazuya Nagaseki ,  Shinji Himori ,  Atsushi Matsuura ,  Ryo Nonaka

发明人： Daisuke Hayashi ,  Kazuya Nagaseki ,  Shinji Himori ,  Atsushi Matsuura ,  Ryo Nonaka

IPC分类号： B23K9/00

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/32532

摘要： Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.

摘要翻译： 这里公开了一种等离子体处理装置，其将处理气体引入到气密处理容器中，该气密处理容器施加射频功率以产生等离子体，并且将等离子体处理传送到布置在处理容器中的被处理物体。 等离子体处理装置包括：布置在处理容器中的电极单元，具有用于施加射频电力的电极的电极单元和布置在电极单元中的空间部分，每个电极单元绝缘电极和处理容器的空间部分 其他。 空间部分与处理容器外部的大气连通。

公开(公告)号：US20110083837A1

公开(公告)日：2011-04-14

申请号：US12902225

申请日：2010-10-12

申请人： Yasuharu Sasaki ,  Ryo Nonaka ,  Nobuyuki Nagayama

发明人： Yasuharu Sasaki ,  Ryo Nonaka ,  Nobuyuki Nagayama

IPC分类号： G05D23/00 ,  F28D15/00

CPC分类号： H01L21/67248 ,  H01L21/67109

摘要： A temperature control system includes a heat transfer medium supply configured to supply a first heat transfer medium of a first temperature into a heat transfer medium path; at least one heat transfer medium storage provided between the heat transfer medium path and the heat transfer medium supply and configured to store a second heat transfer medium of a second temperature higher than the first temperature; a heat transfer medium supply control device provided between the heat transfer medium supply and the heat transfer medium path and between the heat transfer medium storage and the heat transfer medium path and configured to stop a supply of the first heat transfer medium into the heat transfer medium path from the heat transfer medium supply and to supply the second heat transfer medium into the heat transfer medium path from the heat transfer medium storage when a heating unit generates heat.

摘要翻译： 温度控制系统包括：传热介质供给，其构造成将第一温度的第一传热介质供给到传热介质路径中; 设置在传热介质路径和传热介质之间的至少一个传热介质存储器供应并构造成存储第二温度高于第一温度的第二传热介质; 传热介质供给控制装置，设置在所述传热介质供给与所述传热介质路径之间，以及所述传热介质储存部和所述传热介质路径之间，并且被配置为停止向所述传热介质供给所述第一传热介质 并且当加热单元产生热量时，从传热介质储存器将第二传热介质供应到传热介质路径中。

公开(公告)号：US5914568A

公开(公告)日：1999-06-22

申请号：US41795

申请日：1998-03-13

申请人： Ryo Nonaka

发明人： Ryo Nonaka

IPC分类号： H05H1/46 ,  B23Q3/15 ,  C23C16/50 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H01J7/24

CPC分类号： H01L21/6831

摘要： A plasma processing apparatus has a susceptor with a mount surface on which an electrostatic chuck is arranged. The electrostatic chuck is formed of one inner chuck segment and four outer chuck segments. The chuck segments are arrayed with gaps interposed therebetween to prevent the electrostatic chuck from being distorted due to thermal stress.

摘要翻译： 等离子体处理装置具有安装有静电卡盘的安装面的基座。 静电卡盘由一个内卡盘部分和四个外卡盘部分组成。 卡盘段排列有间隙，以防止静电卡盘由于热应力而变形。

公开(公告)号：US10418258B2

公开(公告)日：2019-09-17

申请号：US14233247

申请日：2012-07-19

申请人： Ryo Nonaka

发明人： Ryo Nonaka

IPC分类号： H01L21/67

摘要： A temperature of only a part in a surface of a mounting table can be set to be higher than or lower than a set temperature of an entire surface of the mounting table. A main flow path 320 formed within the mounting table 200 to be arranged over the entire surface thereof; an auxiliary flow path 330 formed within the mounting table to be arranged in a part of the surface thereof; and a temperature control medium circulating unit that supplies and circulates a temperature control medium adjusted to have a set temperature into and through the main flow path, allows the temperature control medium to be branched, and supplies and circulates the branched temperature control medium into and through the auxiliary flow path after adjusting a temperature of the branched temperature control medium to be a temperature higher than or lower than the set temperature are provided.

公开(公告)号：US08132580B2

公开(公告)日：2012-03-13

申请号：US12057807

申请日：2008-03-28

申请人： Tsuyoshi Moriya ,  Tadashi Onishi ,  Ryo Nonaka ,  Eiichi Nishimura

发明人： Tsuyoshi Moriya ,  Tadashi Onishi ,  Ryo Nonaka ,  Eiichi Nishimura

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： A substrate processing system that enables foreign matter adhered to a rear surface or a periphery of a substrate to be completely removed. A substrate processing apparatus performs predetermined processing on the substrate. A substrate cleaning apparatus cleans the substrate at least one of before and after the predetermined processing. A jetting apparatus jets a cleaning substance in two phases of a gas phase and a liquid phase and a high-temperature gas towards the rear surface or the periphery of the substrate.

摘要翻译： 能够完全除去附着在基板的背面或周围的异物的基板处理系统。 基板处理装置对基板进行规定的处理。 基板清洁装置在预定处理之前和之后清洁基板。 喷射装置将气相和液相以及高温气体的两相中的清洗物质喷射到基板的后表面或周边。

公开(公告)号：US20090188428A1

公开(公告)日：2009-07-30

申请号：US12361004

申请日：2009-01-28

申请人： Isamu SAKURAGI ,  Shigeru Tahara ,  Kumiko Yamazaki ,  Ryo Nonaka ,  Morihiro Takanashi ,  Eiichi Nishimura

发明人： Isamu SAKURAGI ,  Shigeru Tahara ,  Kumiko Yamazaki ,  Ryo Nonaka ,  Morihiro Takanashi ,  Eiichi Nishimura

IPC分类号： B05C13/00 ,  B01J19/00

CPC分类号： H01L21/67109 ,  H01L21/67017

摘要： A substrate processing apparatus includes a processing vessel; a mounting table for mounting the substrate thereon in the processing vessel; a gas inlet unit provided in the processing vessel; a gas supply mechanism for supplying a hydrogen-containing gas into the processing vessel through the gas inlet unit; a gas discharge port provided at the processing vessel; a gas exhaust mechanism for exhausting an inside of the processing vessel through the gas discharge port; a catalyst provided in the processing vessel; and a heating unit for heating the catalyst. Hydrogen radicals are formed in the processing vessel by a catalytic cracking reaction between the hydrogen-containing gas and the catalyst of high temperature, and the substrate is processed by the hydrogen radicals.

摘要翻译： 基板处理装置包括处理容器; 用于将基板安装在处理容器中的安装台; 设置在处理容器中的气体入口单元; 用于通过气体入口单元将含氢气体供应到处理容器中的气体供给机构; 设置在处理容器的气体排出口; 排气机构，用于通过排气口排出处理容器的内部; 设置在处理容器中的催化剂; 以及用于加热催化剂的加热单元。 通过含氢气体和高温催化剂之间的催化裂化反应在处理容器中形成氢根，并且通过氢原子处理衬底。