公开(公告)号：US5310453A

公开(公告)日：1994-05-10

申请号：US17379

申请日：1993-02-12

申请人： Kazuo Fukasawa ,  Ryo Nonaka ,  Kousuke Imafuku

发明人： Kazuo Fukasawa ,  Ryo Nonaka ,  Kousuke Imafuku

IPC分类号： H01L21/00 ,  H01L21/683 ,  B44C1/22 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/67098 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/2001 ,  H01J2237/334

摘要： Prior to plasma etching, a wafer is placed on conductive support pins which extend through an electrostatic chuck. The electrostatic chuck is disposed on a susceptor incorporating a cooling jacket. A potential for electrostatic attraction is applied to the electrostatic chuck. The support pins are lowered while they are grounded, thus placing the wafer on the electrostatic chuck. Subsequently, the support pins are retracted into the electrostatic chuck to release contact between the wafer and themselves. A heat medium gas is then supplied between the wafer and the electrostatic chuck to improve the heat transfer rate therebetween. A plasma is then generated in a process chamber, and the wafer is etched by using the plasma. Since the heat transfer rate between the wafer and the electrostatic chuck is improved before the generation of the plasma, damage to the wafer due to heat can be prevented, and the starting time required to start an etching process is shortened.

摘要翻译： 在等离子体蚀刻之前，将晶片放置在延伸穿过静电卡盘的导电支撑销上。 静电吸盘设置在包含冷却套的基座上。 对静电吸盘施加静电吸引的可能性。 支撑销在接地时降低，从而将晶片放置在静电卡盘上。 随后，支撑销缩回到静电卡盘中，以释放晶片与它们之间的接触。 然后在晶片和静电卡盘之间提供热介质气体，以提高它们之间的传热速率。 然后在处理室中产生等离子体，并且通过使用等离子体来蚀刻晶片。 由于在产生等离子体之前提高了晶片和静电卡盘之间的传热速率，所以可以防止由于热而对晶片造成的损坏，并且缩短了开始蚀刻工艺所需的开始时间。

公开(公告)号：US06241152B1

公开(公告)日：2001-06-05

申请号：US09149077

申请日：1998-09-08

申请人： Kazuo Fukasawa

发明人： Kazuo Fukasawa

IPC分类号： G06K708

CPC分类号： G06K19/06187 ,  G06K1/125

摘要： A card processing apparatus process the card having the magnetic layer containing two types magnetic material. The one of the magnetic materials increases coercive force once receiving a magnetic field as compared to coercive force prior to application of the magnetic field and changes to a substantially irreversible state. This apparatus records first data by applying a magnetic field so as to record the data on the magnetic layer of the card at a first azimuth angle in order to change the states of the two types magnetic materials of the magnetic layer. This apparatus also records second data by applying a magnetic field so as to record the data at a second azimuth angle different from the first azimuth angle in order to change the state of the first magnetic material of the area of the card which is recorded as the first data. Further, this apparatus reads the first data recorded with the first azimuth angle and the second data recorded with the second azimuth angle, then determines that whether or not the first and second data is validly recorded on the card, and issues the card.

摘要翻译： 卡处理装置处理具有含有两种磁性材料的磁性层的卡。 与施加磁场之前的矫顽力相比，磁性材料中的一种增加了一旦接收磁场的矫顽力，并且变成基本上不可逆的状态。 该装置通过施加磁场来记录第一数据，以便以第一方位角将数据记录在卡的磁性层上，以便改变磁性层的两种磁性材料的状态。 该装置还通过施加磁场来记录第二数据，以便以不同于第一方位角的第二方位角记录数据，以便改变作为记录的卡的区域的第一磁性材料的状态 第一个数据。 此外，该装置读取以第一方位角记录的第一数据和以第二方位角记录的第二数据，然后确定第一和第二数据是否有效地记录在卡上，并发出卡。

公开(公告)号：USD411516S

公开(公告)日：1999-06-29

申请号：US59398

申请日：1996-09-10

申请人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuo Fukasawa

设计人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuo Fukasawa

公开(公告)号：US06606912B2

公开(公告)日：2003-08-19

申请号：US09825340

申请日：2001-04-04

申请人： Tadahiro Ohmi ,  Takashi Hirose ,  Eiji Ideta ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Kazuhiro Yoshikawa ,  Satoshi Kagatsume ,  Jun Hirose ,  Kazuo Fukasawa ,  Hiroshi Koizumi ,  Hideki Nagaoka

发明人： Tadahiro Ohmi ,  Takashi Hirose ,  Eiji Ideta ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Kazuhiro Yoshikawa ,  Satoshi Kagatsume ,  Jun Hirose ,  Kazuo Fukasawa ,  Hiroshi Koizumi ,  Hideki Nagaoka

IPC分类号： G01L700

CPC分类号： G01L19/0023 ,  G01L19/0645 ,  G01L19/145 ,  G01L19/147

摘要： A construction for mounting a pressure detector prevents the detector diaphragm from being strained by stress applied to the pressure detector as the detector is mounted in a fixture main body provided in a pipe line or the like, thereby keeping the output characteristics and temperature characteristics of the detector from greatly differing before and after the mounting. The pressure detector is constructed by combining and fastening together a diaphragm base having a diaphragm and a sensor base having a sensor element therein that is activated by displacement of the diaphragm base. The pressure detector, with a gasket placed thereunder, is disposed in a mounting hole of a fixture main body that is mounted in a pipe line. The pressure detector is air-tightly pressed and fastened by a presser member inserted from above in the mounting hole. The presser member is brought in contact with a block upper surface of the diaphragm base, and the gasket is also brought in contact with the block lower surface of the diaphragm base. A shallow groove is defined in the form of a ring on the lower surface of the block at a place inward of the portion contacting the metal gasket so that the shallow groove absorbs strain caused by the presser member.

摘要翻译： 用于安装压力检测器的结构防止了检测器膜片被施加到压力检测器上的应力而被应变，因为检测器安装在设置在管线等中的夹具主体中，从而保持了输出特性和温度特性 检测器在安装前后差异很大。 压力检测器通过将具有隔膜的膜片基座和具有传感器元件的传感器基座组合并紧固在一起而构成，该传感器基座通过隔膜基座的位移而被激活。 压力检测器，其上放置有垫圈，设置在安装在管道中的固定装置本体的安装孔中。 压力检测器通过从安装孔中从上方插入的压紧构件气密地按压并紧固。 压板构件与隔膜基座的块上表面接触，并且垫圈也与隔膜基座的块下表面接触。 浅槽在块体的下表面上在与金属垫片接触的部分的内侧的位置处以环的形式限定，使得浅槽吸收由压紧构件引起的应变。

公开(公告)号：US5483050A

公开(公告)日：1996-01-09

申请号：US306958

申请日：1994-09-16

申请人： Kazuo Fukasawa

发明人： Kazuo Fukasawa

IPC分类号： G07B11/02 ,  G06K7/01 ,  G06K7/08 ,  G07F7/08

CPC分类号： G06K7/084

摘要： A magnetic medium processing apparatus includes a magnetism reading head for reading magnetic data recorded in a ticket, a peak value detector for detecting peak values of a signal output from the reading head, and a display for displaying the digital peak values detected by the peak value detector. Monitoring the state of reading by the reading head prevents unstable reading of magnetic data irrespective of whether the reading head is worn out.

摘要翻译： 磁介质处理装置包括用于读取记录在票中的磁数据的磁读取头，用于检测从读取头输出的信号的峰值的峰值检测器和用于显示由峰值检测的数字峰值的显示器 探测器。 通过读取头监视读取状态，防止磁数据的读取不稳定，而不管读取头是否磨损。

公开(公告)号：US4908095A

公开(公告)日：1990-03-13

申请号：US344709

申请日：1989-04-28

申请人： Satoshi Kagatsume ,  Kazuo Fukasawa

发明人： Satoshi Kagatsume ,  Kazuo Fukasawa

IPC分类号： C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677

CPC分类号： H01L21/67069 ,  H01L21/67766

摘要： An etching device comprising a housing in which etching process is carried out, an electrode system having lower and upper electrodes opposed to each other used to generate plasma between these electrodes, while a semiconductor wafer is being placed on the lower electrode, a lifter system to move the lower electrode up and down, a high-frequency power source for applying current between these electrodes, a holder member located between the lower and upper electrodes to hold the wafer at a certain position between these electrodes, and a gas supply means for supplying reaction gases used to generate plasma, between the lower and upper electrodes.

摘要翻译： 一种蚀刻装置，包括其中执行蚀刻工艺的壳体，具有彼此相对的下电极和上电极的电极系统，用于在这些电极之间产生等离子体，同时将半导体晶片放置在下电极上，提升器系统 上下移动下电极，用于在这些电极之间施加电流的高频电源，位于下电极和上电极之间的保持器构件，以将晶片保持在这些电极之间的特定位置;以及气体供应装置， 用于在下电极和上电极之间产生等离子体的反应气体。

公开(公告)号：US06450190B2

公开(公告)日：2002-09-17

申请号：US09826834

申请日：2001-04-06

申请人： Tadahiro Ohmi ,  Seiichi Iida ,  Satoshi Kagatsume ,  Jun Hirose ,  Kazuo Fukasawa ,  Hiroshi Koizumi ,  Hideki Nagaoka ,  Tomio Uno ,  Kouji Nishino ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Eiji Ideta

发明人： Tadahiro Ohmi ,  Seiichi Iida ,  Satoshi Kagatsume ,  Jun Hirose ,  Kazuo Fukasawa ,  Hiroshi Koizumi ,  Hideki Nagaoka ,  Tomio Uno ,  Kouji Nishino ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Eiji Ideta

IPC分类号： G05D706

CPC分类号： G05B23/0235 ,  G05B23/0256 ,  G05D7/0635 ,  Y10T137/0396 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/8326

摘要： A method of detecting abnormalities in flow rate in pressure-type flow controller. The method checks the flow rate for abnormalities while controlling the flow rate of fluid in a pressure-type flow controller FCS using an orifice—the pressure-type flow controller wherein with the upstream pressure P1 maintained about two or more times higher than the downstream pressure P2, the downstream flow rate QC is calculated by the equation QC=KP1 (K: constant) and wherein the control valve CV is controlled on the basis of the difference signal QY between the calculated flow rate QC and the set flow rate QS.

摘要翻译： 一种检测压力型流量控制器流量异常的方法。 该方法在使用孔口压力型流量控制器控制压力型流量控制器FCS中的流体流量的同时检查异常流量，其中上游压力P1保持大于下游压力的两倍或更多倍 P2，通过等式QC = KP1（K：常数）计算下游流量QC，并且其中基于所计算的流量QC和设定流量QS之间的差信号QY来控制控制阀CV。

公开(公告)号：US6110287A

公开(公告)日：2000-08-29

申请号：US843129

申请日：1997-04-28

申请人： Izumi Arai ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Yoshinobu Mitano ,  Shunichi Iimuro ,  Kazuo Fukasawa ,  Yutaka Miura ,  Shozo Hosoda

发明人： Izumi Arai ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Yoshinobu Mitano ,  Shunichi Iimuro ,  Kazuo Fukasawa ,  Yutaka Miura ,  Shozo Hosoda

IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  C23C16/5096 ,  H01J37/3244

摘要： A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing. There is provided a resistance applying [means for applying] apply resistance to the process gas flowing to the processing chamber via the gas introducing hole from the gas introducing means such that a plasma discharge is prevented from occurring in the gas introducing means when a process pressure in the processing chamber is set at 0.5 Torr or less.

摘要翻译： 一种等离子体处理方法，其中将高频电力供应到其中安装有被处理物体的处理室，从而在处理室中产生等离子体，并且在等离子体的气氛中对物体进行处理，其中 高频功率受到低频功率的调制。 在一个实施例中，通过使用具有随时间变化的电流方向的电力在处理室中产生等离子体，并且待处理物体在等离子体的气氛中被处理，其中具有基本频率的功率为 以频率等于基本频率的n倍（n =整数）的频率进行频率调制。 在本发明的等离子体处理装置中，当通过形成在电极中的第一气体导入孔将处理气体供给到处理室时，对被保持在对置电极上的被处理物进行等离子体处理。 提供了一种电阻，其应用[施加装置]对来自气体导入装置的气体导入孔流向处理室的工艺气体施加阻力，使得当气体导入装置中的过程压力 在处理室中设定为0.5乇以下。

公开(公告)号：US5342471A

公开(公告)日：1994-08-30

申请号：US870827

申请日：1992-04-20

申请人： Kazuo Fukasawa ,  Masachika Suetsugu

发明人： Kazuo Fukasawa ,  Masachika Suetsugu

IPC分类号： H01L21/205 ,  C23C14/56 ,  C23C16/44 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  B44C1/22

CPC分类号： H01J37/32522 ,  C23C14/564 ,  C23C16/4401 ,  H01J2237/0266 ,  H01J2237/2001 ,  Y10S156/914

摘要： A plasma processing apparatus having a pair of electrodes which are installed alternately in parallel in a chamber and in which an object to be processed is placed at one electrode thereof, radiofrequency applying device for applying radiofrequency power between the pair of electrodes, cooling device for cooling the object, drying-gas introducing tube for supplying a drying gas into the chamber, and dropwise-condensation preventing member installed at a portion of the chamber so as to be in contact with the outer atmosphere. The apparatus can prevent dropwise condensation at the time of cooling and at the same time prevent the occurrence of radiofrequency leakage.

摘要翻译： 一种等离子体处理装置，其具有一对电极，其在室中交替平行安装，并且其中待处理物体放置在其一个电极处，用于在所述一对电极之间施加射频电力的射频施加装置，用于冷却的冷却装置 该物体，用于将干燥气体供应到室中的干燥气体导入管，以及安装在室的一部分以与外部大气接触的防滴落构件。 该装置可以防止冷却时的滴流冷凝，同时防止发生射频泄漏。

公开(公告)号：US5275683A

公开(公告)日：1994-01-04

申请号：US965851

申请日：1992-10-23

申请人： Junichi Arami ,  Kazuo Fukasawa ,  Takashi Ito

发明人： Junichi Arami ,  Kazuo Fukasawa ,  Takashi Ito

IPC分类号： H01L21/683 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/6831 ,  Y10S156/915

摘要： A wafer mount is arranged in a process chamber of the plasma etching apparatus. The rim section of a susceptor which serves as a mount body is curved at a large curvature radius. An electrostatic chuck sheet is arranged on the top of the susceptor and its rim is curved downward along the curved rim section of the susceptor, departing from the marginal portion of a semiconductor wafer mounted thereon as it comes outward. The rim of the electrostatic chuck sheet can be thus shortened in the horizontal direction and this enables a conductive film in the electrostatic chuck sheet to be made longer in the same direction. The electrostatic and thermal connection of the wafer to the electrostatic chuck sheet can be thus enhanced.

摘要翻译： 在等离子体蚀刻装置的处理室中设置晶片安装台。 用作安装体的基座的边缘部分以大的曲率半径弯曲。 静电吸盘片布置在基座的顶部，其边缘沿着基座的弯曲边缘部分向下弯曲，当其离开时离开安装在其上的半导体晶片的边缘部分。 因此，静电卡盘片的边缘可以在水平方向上缩短，从而能够使静电卡盘片中的导电膜沿同一方向变长。 因此可以提高晶片与静电卡盘片的静电和热连接。