-
公开(公告)号：US20050085077A1
公开(公告)日：2005-04-21
申请号：US10956365
申请日：2004-10-04
IPC分类号： H01L21/3065 , H01L21/302 , H01L21/311 , H01L21/461
CPC分类号： H01L21/31138 , H01L21/31116 , H01L21/31144
摘要： An etching method etches an organic film by using an inorganic film as a mask at a high etch rate, in a satisfactory etch profile in a satisfactory in-plane uniformity without causing the inorganic film to peel off. An organic film formed on a workpiece is etched by using an inorganic film as a mask with a plasma produced by discharging an etching gas in a processing vessel (1). The etching method uses a mixed gas containing NH3 gas and O2 gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio of 40% or above. The etching method uses NH3 gas as an etching gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio below 40%.
摘要翻译： 蚀刻方法通过以高蚀刻速率以无机膜为掩模蚀刻有机膜，以令人满意的平面均匀性的令人满意的蚀刻轮廓，而不会使无机膜剥离。 通过使用无机膜作为掩模，通过在处理容器（1）中排出蚀刻气体而产生的等离子体来蚀刻形成在工件上的有机膜。 蚀刻方法使用含有NH 3气体和O 2气体的混合气体来蚀刻有机膜，以有机膜以开口率为 40％以上。 当有机膜以开口率低于40％的图案被蚀刻时，蚀刻方法使用NH 3气体作为用于蚀刻有机膜的蚀刻气体。
-
公开(公告)号：US20050103441A1
公开(公告)日：2005-05-19
申请号：US10844498
申请日：2004-05-13
申请人： Masanobu Honda , Kazuya Nagaseki , Hanako Kida , Koichi Yatsuda , Youbun Ito , Koichiro Inazawa , Rie Inazawa , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Hanako Kida , Koichi Yatsuda , Youbun Ito , Koichiro Inazawa , Rie Inazawa , Hisataka Hayashi
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01J37/32082 , H01J37/32706 , H01L21/31116 , H01L21/31144
摘要： There is provided an etching method and a plasma etching apparatus capable of taking a large etching selection ratio and of forming a hole having an appropriate shape. When etching an etching target film 204 by using an organic film 202 having a predetermined pattern as a mask, processing gas is introduced into an airtight processing container 104. There are provided a high frequency power source 122 of 40 MHz and a high frequency power source 128 of 3.2 MHz, by which two different kinds of high frequency powers are applied to a lower electrode 106. The power of each high frequency power is properly combined, thereby executing the etching process by using low plasma electron density Ne and high self-bias voltage Vdc which are generated by high frequency power.
摘要翻译： 提供了能够获得大的蚀刻选择比和形成具有适当形状的孔的蚀刻方法和等离子体蚀刻装置。 当通过使用具有预定图案的有机膜202作为掩模蚀刻蚀刻目标膜204时，处理气体被引入到气密处理容器104中。 提供40MHz的高频电源122和3.2MHz的高频电源128，通过该高频电源128将两种不同种类的高频功率施加到下电极106。 每个高频功率的功率被适当组合，从而通过使用由高频功率产生的低等离子体电子密度Ne和高自偏压Vdc来执行蚀刻处理。
-
公开(公告)号：US08048325B2
公开(公告)日：2011-11-01
申请号：US11970062
申请日：2008-01-07
申请人： Vaidyanathan Balasubramaniam , Koichiro Inazawa , Rie Inazawa , Rich Wise , Arpan Mahorawala , Siddhartha Panda
发明人： Vaidyanathan Balasubramaniam , Koichiro Inazawa , Rie Inazawa , Rich Wise , Arpan Mahorawala , Siddhartha Panda
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01L21/31138
摘要： A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
摘要翻译： 一种在等离子体处理系统中蚀刻衬底上的有机抗反射涂层（ARC）层的方法，包括：引入包含氨（NH 3）和钝化气体的工艺气体; 从工艺气体形成等离子体; 并将衬底暴露于等离子体。 处理气体可以例如构成NH 3和烃气体，例如C 2 H 4，CH 4，C 2 H 2，C 2 H 6，C 3 H 4，C 3 H 6，C 3 H 8，C 4 H 6，C 4 H 8，C 4 H 10，C 5 H 8，C 5 H 10，C 6 H 6，C 6 H 10和C 6 H 12中的至少一种 。 另外，工艺化学可以进一步包括添加氦。 本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法，其中所述方法包括：在所述衬底上形成所述薄膜; 在薄膜上形成ARC层; 在ARC层上形成光刻胶图案; 以及使用包含氨（NH 3）和钝化气体的工艺气体的蚀刻工艺将光致抗蚀剂图案转移到ARC层。
-
公开(公告)号：US20060154486A1
公开(公告)日：2006-07-13
申请号：US11032021
申请日：2005-01-11
申请人： Vaidyanathan Balasubramaniam , Yasunori Hatamura , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa
发明人： Vaidyanathan Balasubramaniam , Yasunori Hatamura , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01J37/32082 , H01J2237/3342 , H01L21/31138 , H01L22/26
摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluorocarbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译： 提供了一种用于等离子体灰化以去除光刻胶残余物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用涉及含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的碳氟化合物残留物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 在第二清洗步骤中使用小于20mTorr的室压力。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。
-
公开(公告)号：US20060144817A1
公开(公告)日：2006-07-06
申请号：US11024747
申请日：2004-12-30
申请人： Vaidyanathan Balasubramaniam , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa
发明人： Vaidyanathan Balasubramaniam , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa
IPC分类号： G01L21/30 , G01R31/00 , B44C1/22 , H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/02063
摘要： A method is provided for low-pressure plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译： 提供了一种用于低压等离子体灰化以去除光致抗蚀剂残余物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用包含含氧气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的氟碳残余物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 在第二清洗步骤中使用小于20mTorr的室压力。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。
-
公开(公告)号：US07700494B2
公开(公告)日：2010-04-20
申请号：US11024747
申请日：2004-12-30
申请人： Vaidyanathan Balasubramaniam , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa, legal representative
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/02063
摘要： A method is provided for low-pressure plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译： 提供了一种用于低压等离子体灰化以去除光刻胶残余物和蚀刻在电介质层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用包含含氧气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的氟碳残余物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 在第二清洗步骤中使用小于20mTorr的室压力。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。
-
公开(公告)号：US20100024983A1
公开(公告)日：2010-02-04
申请号：US12578007
申请日：2009-10-13
IPC分类号： H01L21/3065
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译： 本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板 具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过 电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。
-
公开(公告)号：US08840753B2
公开(公告)日：2014-09-23
申请号：US12578007
申请日：2009-10-13
IPC分类号： H01L21/306 , C23C16/50 , C23C16/00 , H01L21/311 , H01L21/768 , H01J37/32
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译： 本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板 具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过 电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。
-
公开(公告)号：US07625494B2
公开(公告)日：2009-12-01
申请号：US10860152
申请日：2004-06-04
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译： 本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板 具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过 电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。
-
公开(公告)号：US5595627A
公开(公告)日：1997-01-21
申请号：US597563
申请日：1996-02-02
IPC分类号： H05H1/46 , C23F4/00 , C30B33/12 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/00 , C09K13/00
CPC分类号： H01L21/31116
摘要： A plasma etching apparatus has a lower electrode for supporting a semiconductor wafer in a processing room, an upper electrode opposite to the lower electrode, and an RF power supply for applying an RF power across the upper and lower electrodes. An SiN layer as an underlayer having a shoulder portion, and an SiO.sub.2 layer covering the SiN layer are disposed on the wafer. A contact hole is formed in the SiO.sub.2 layer by etching so as to expose the shoulder portion of the SiN layer. A processing gas contains C.sub.4 F.sub.8 and CO. To set the etching selection ratio of SiO.sub.2 /SiN, the discharge duration of each part of the processing gas is used as a parameter. The progress of dissociation of C.sub.4 F.sub.8 is controlled by selecting the discharge duration. The discharge duration is determined by the residence time of each part of the processing gas and the application time of an RF power.
摘要翻译： 等离子体蚀刻装置具有用于在处理室中支撑半导体晶片的下电极，与下电极相对的上电极，以及用于在上电极和下电极上施加RF电力的RF电源。 作为具有肩部的底层的SiN层和覆盖SiN层的SiO 2层设置在晶片上。 通过蚀刻在SiO 2层中形成接触孔，以露出SiN层的肩部。 处理气体含有C4F8和CO。为了设定SiO 2 / SiN的蚀刻选择比，使用处理气体的各部分的排出持续时间作为参数。 通过选择放电持续时间控制C4F8的离解进程。 放电持续时间由处理气体的每个部分的停留时间和RF功率的施加时间决定。
-
-
-
-
-
-
-
-
-
搜索结果
32 条记录 (耗时 0.023 秒)
