公开(公告)号：US4675143A

公开(公告)日：1987-06-23

申请号：US814184

申请日：1985-12-27

申请人： Kazuto Wakita ,  Kazuo Tsuchiya ,  Kazuaki Kobayashi ,  Ken Higashitsuji ,  Teruhisa Kojima

发明人： Kazuto Wakita ,  Kazuo Tsuchiya ,  Kazuaki Kobayashi ,  Ken Higashitsuji ,  Teruhisa Kojima

IPC分类号： C08K5/03 ,  C08K5/00 ,  C08K5/02 ,  C08K7/00 ,  C08K7/02 ,  C08K7/06 ,  C08K13/04 ,  C08L101/00 ,  H01B1/22 ,  C04B35/00

CPC分类号： C08K7/06 ,  H01B1/22

摘要： A shaped electroconductive thermoplastic resin composition article having a preferable surface appearance is produced by a process including (1) mixing a matrix resinous material containing 100 parts by weight of a thermoplastic resin and, optionally, 120 parts by weight or less of a flame x retardant additive and 40 parts by weight or less of a flame retardant synergistic additive, with 1 to 15% based on the weight of the matrix resinous material, of stainless steel fibers having a length of 2.5 to 7.5 mm and adhered to each other with a thermoplastic resinous adhesive to form a number of bundles; (2) kneading the resultant mixture at an elevated temperature at which the matrix resinous material is melted and (3) shaping the kneaded mixture into a desired form, the kneading the shaping procedures being carried out so that the stainless steel fibers are uniformly dispersed in the melted matrix resinous material and the dispersed stainless steel fibers have an average length of 0.5 to 2.0 mm. The ratio of the average length of the dispersed and sheared stainless steel fibers to the length of the stainless steel fiber bundles is preferably in a range of 1/6 to 1/3.

摘要翻译： 通过以下方法制造具有优选表面外观的成形导电性热塑性树脂组合物制品，该方法包括：（1）混合含有100重量份热塑性树脂的基体树脂材料和任选地120重量份或更少的阻燃剂 添加剂和40重量份或更少的阻燃协同添加剂，基于树脂材料重量的1至15重量％的长度为2.5至7.5毫米的不锈钢纤维并用热塑性材料彼此粘合 树脂粘合剂形成多个束; （2）在基体树脂材料熔融的高温下捏合所得混合物，（3）将捏合的混合物成形为所需形状，捏合进行的成形过程，使得不锈钢纤维均匀分散在 熔融的基质树脂材料和分散的不锈钢纤维的平均长度为0.5-2.0mm。 分散和剪切的不锈钢纤维的平均长度与不锈钢纤维束的长度之比优选在1/6至1/3的范围内。

公开(公告)号：US4642260A

公开(公告)日：1987-02-10

申请号：US711965

申请日：1985-03-14

申请人： Kazuto Wakita ,  Kazuo Tsuchiya ,  Isao Nagayasu ,  Ikuo Emoto

发明人： Kazuto Wakita ,  Kazuo Tsuchiya ,  Isao Nagayasu ,  Ikuo Emoto

IPC分类号： B41N1/14 ,  B41N1/08 ,  B32B7/02 ,  B32B15/08

CPC分类号： B41N1/086 ,  Y10T428/24967 ,  Y10T428/251 ,  Y10T428/31692

摘要： Disclosed is a substrate for planographic (lithographic) plate, which comprises metal foils with thicknesses of 5 to 100.mu. laminated onto both surfaces of a sheet which has a thickness of 30 to 400.mu., said sheet being obtained by sheet making of a modified polyolefin composite material comprising 100 parts by weight of a modified polyolefin resin graft-modified partially or wholly with an organic silane compound and 5 to 150 parts by weight of mica.

摘要翻译： 公开了一种用于平版印刷（平版印刷）板的基板，其包括厚度为5至100μm的金属箔，层压在厚度为30至400μm的片材的两个表面上，所述片材通过改性聚烯烃 包含100重量份部分或全部用有机硅烷化合物接枝改性的改性聚烯烃树脂和5至150重量份云母的复合材料。

公开(公告)号：US07030029B2

公开(公告)日：2006-04-18

申请号：US10257990

申请日：2001-05-10

申请人： Kazuo Tsuchiya

发明人： Kazuo Tsuchiya

IPC分类号： H01L21/302

CPC分类号： H01L21/76897 ,  H01L21/31116

摘要： A method for SAC etching is provided involving a) etching a Si wafer having a nitride present thereon with a first etching gas containing a first perfluorocarbon and carbon monoxide, and b) etching the resultant Si wafer having an initially etched nitride photoresist thereon with a second etching gas containing a second perfluorocarbon in the substantial absence of carbon monoxide, wherein the etching steps a) and b) are performed at high RF power and low pressure compared to conventional processes to provide higher selectivity etching and a larger process window for SAC etching, as well as the ability to perform SAC etching and island contact etching under the same conditions with high verticality of the island contact and SAC walls.

摘要翻译： 提供了一种用于SAC蚀刻的方法，其涉及a）用含有第一全氟化碳和一氧化碳的第一蚀刻气体蚀刻其上存在氮化物的Si晶片，以及b）用第二次蚀刻具有最初蚀刻的氮化物光刻胶的所得Si晶片 在基本上不存在一氧化碳的情况下，含有第二全氟化碳的蚀刻气体，其中与常规方法相比，以高RF功率和低压进行蚀刻步骤a）和b）以提供更高选择性蚀刻和用于SAC蚀刻的较大工艺窗口， 以及在相同条件下在岛接触和SAC壁的高垂直度下进行SAC蚀刻和岛接触蚀刻的能力。

公开(公告)号：US20050263487A1

公开(公告)日：2005-12-01

申请号：US11203211

申请日：2005-08-15

申请人： Kazuo Tsuchiya

发明人： Kazuo Tsuchiya

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/60 ,  H01L21/302

CPC分类号： H01L21/76897 ,  H01L21/31116

摘要： A method for SAC etching is provided involving a) etching a Si wafer having a nitride present thereon with a first etching gas containing a first perfluorocarbon and carbon monoxide, and b) etching the resultant Si wafer having an initially etched nitride photoresist thereon with a second etching gas containing a second perfluorocarbon in the substantial absence of carbon monoxide, wherein the etching steps a) and b) are performed at high RF power and low pressure compared to conventional processes to provide higher selectivity etching and a larger process window for SAC etching, as well as the ability to perform SAC etching and island contact etching under the same conditions with high verticality of the island contact and SAC walls.

摘要翻译： 提供了一种用于SAC蚀刻的方法，其涉及a）用含有第一全氟化碳和一氧化碳的第一蚀刻气体蚀刻其上存在氮化物的Si晶片，以及b）用第二次蚀刻具有最初蚀刻的氮化物光刻胶的所得Si晶片 在基本上不存在一氧化碳的情况下，含有第二全氟化碳的蚀刻气体，其中与常规方法相比，以高RF功率和低压进行蚀刻步骤a）和b）以提供更高选择性蚀刻和用于SAC蚀刻的较大工艺窗口， 以及在相同条件下在岛接触和SAC壁的高垂直度下进行SAC蚀刻和岛接触蚀刻的能力。

公开(公告)号：US4294475A

公开(公告)日：1981-10-13

申请号：US92262

申请日：1979-11-08

申请人： Isamu Kanai ,  Shigeki Okubo ,  Kazuo Tsuchiya ,  Toshio Takasaki

发明人： Isamu Kanai ,  Shigeki Okubo ,  Kazuo Tsuchiya ,  Toshio Takasaki

IPC分类号： F16L27/00 ,  F16L27/113 ,  F16L27/12 ,  F16L15/02

CPC分类号： F16L27/113 ,  F16L27/12

摘要： A flexible pipe connector which makes use of a pair of intermediate sleeves each having one end portion overlapped with and connected through a rubber-like elastic body to a connection pipe, each of said intermediate sleeves being coaxially arranged with the connection pipe and adapted to move in a fluid-tight manner in the axial direction thereof.

摘要翻译： 一种柔性管连接器，其使用一对中间套筒，每个中间套管的一个端部与橡胶状弹性体重叠并连接到连接管，每个所述中间套筒与连接管同轴布置并适于移动 在其轴向方向上以流体密封的方式。

公开(公告)号：USD719198S1

公开(公告)日：2014-12-09

申请号：US29464162

申请日：2013-08-13

申请人： Kazuo Tsuchiya

设计人： Kazuo Tsuchiya ,  Hitoshi Ryuzaki

公开(公告)号：US07329610B2

公开(公告)日：2008-02-12

申请号：US11203211

申请日：2005-08-15

申请人： Kazuo Tsuchiya

发明人： Kazuo Tsuchiya

IPC分类号： H01L21/302

CPC分类号： H01L21/76897 ,  H01L21/31116

摘要： A method for SAC etching is provided involving a) etching a Si wafer having a nitride present thereon with a first etching gas containing a first perfluorocarbon and carbon monoxide, and b) etching the resultant Si wafer having an initially etched nitride photoresist thereon with a second etching gas containing a second perfluorocarbon in the substantial absence of carbon monoxide, wherein the etching steps a) and b) are performed at high RF power and low pressure compared to conventional processes to provide higher selectivity etching and a larger process window for SAC etching, as well as the ability to perform SAC etching and island contact etching under the same conditions with high verticality of the island contact and SAC walls.

摘要翻译： 提供了一种用于SAC蚀刻的方法，其涉及a）用含有第一全氟化碳和一氧化碳的第一蚀刻气体蚀刻其上存在氮化物的Si晶片，以及b）用第二次蚀刻具有最初蚀刻的氮化物光刻胶的所得Si晶片 在基本上不存在一氧化碳的情况下，含有第二全氟化碳的蚀刻气体，其中与常规方法相比，以高RF功率和低压进行蚀刻步骤a）和b）以提供更高选择性蚀刻和用于SAC蚀刻的较大工艺窗口， 以及在相同条件下在岛接触和SAC壁的高垂直度下进行SAC蚀刻和岛接触蚀刻的能力。

公开(公告)号：US20080135405A1

公开(公告)日：2008-06-12

申请号：US11884878

申请日：2006-02-28

申请人： Hisashi Hori ,  Nobushiro Seo ,  Tomohiro Komoto ,  Kazuo Tsuchiya

发明人： Hisashi Hori ,  Nobushiro Seo ,  Tomohiro Komoto ,  Kazuo Tsuchiya

IPC分类号： C23C14/34 ,  B23K20/12 ,  B32B15/01

CPC分类号： C23C14/3407 ,  B23K20/122 ,  B23K20/1265 ,  B23K20/1275 ,  B23K20/233 ,  C23C26/00 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3491 ,  Y10T428/12736 ,  Y10T428/12764

摘要： Provided is a metal double-layer structure in which a modified metallic member modified from a flat plate metallic member is bonded to be stuck to a plate material, manufacturing method thereof, and a method of regenerating a sputtering target using the method. The method includes the steps of: overlapping the plate material with the metallic member; inserting a rotary tool having a rotor and a probe projecting from a bottom surface of the rotor into a surface of the metallic member while rotated; bringing a distal end of the probe to a position close to a mating plane between the metallic member and the plate material to generate friction heat and stir the distal end, and moving the rotary tool to form adjacent motion tracks on the surface of the metallic member; and forming stirred areas along the mating plane to bond the metallic member and the plate material together, and modifying the metallic member into a modified metallic member.

摘要翻译： 提供一种金属双层结构，其中将从平板金属构件改性的改性金属构件粘合到板材上，其制造方法以及使用该方法再生溅射靶的方法。 该方法包括以下步骤：将板材与金属构件重叠; 将具有转子的旋转工具和从所述转子的底面突出的探针旋转时插入所述金属构件的表面; 将探头的远端带到靠近金属构件和板材之间的配合平面的位置以产生摩擦热并搅拌远端，并移动旋转工具以在金属构件的表面上形成相邻的运动轨迹 ; 并且沿着配合平面形成搅拌区域，以将金属构件和板材结合在一起，并将金属构件改性为改性金属构件。

公开(公告)号：USRE36810E

公开(公告)日：2000-08-08

申请号：US165545

申请日：1998-10-02

申请人： Masashi Arasawa ,  Katsuhiko Ono ,  Hiroshi Nishikawa ,  Kazuo Tsuchiya

发明人： Masashi Arasawa ,  Katsuhiko Ono ,  Hiroshi Nishikawa ,  Kazuo Tsuchiya

IPC分类号： H01L21/302 ,  C23C16/458 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/00

CPC分类号： C23C16/466 ,  C23C16/4586 ,  H01J37/32431 ,  H01J2237/2001

摘要： A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.

摘要翻译： 一种等离子体处理装置，包括：在其周边区域的开口的顶部开口的第一通路;第一气体供给源，其通过第一通路将热交换气体供给到所述容器和晶片之间的小间隙;第一真空泵， 通过第一通道排出间隙，第二通道在其中心区域处在容器的顶部开口，第二气体供应源，用于通过第二通道将热交换气体供应到间隙中;第二真空泵，用于排出间隙 通过第二通道，以及用于独立于其他方式控制第一和第二气体供给源以及第一和第二真空泵的控制器，使得由第二气体供应源和真空泵在第二通道中产生的背压可以变成 低于由第一气体供应源和真空泵在第一通道中引起的背压。

公开(公告)号：US5547539A

公开(公告)日：1996-08-20

申请号：US361579

申请日：1994-12-22

申请人： Masashi Arasawa ,  Katsuhiko Ono ,  Hiroshi Nishikawa ,  Kazuo Tsuchiya

发明人： Masashi Arasawa ,  Katsuhiko Ono ,  Hiroshi Nishikawa ,  Kazuo Tsuchiya

IPC分类号： H01L21/302 ,  C23C16/458 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/00

CPC分类号： C23C16/466 ,  C23C16/4586 ,  H01J37/32431 ,  H01J2237/2001

摘要： A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.