公开(公告)号：US20110310322A1

公开(公告)日：2011-12-22

申请号：US13219814

申请日：2011-08-29

申请人： Kazuyoshi INOUE ,  Shigekazu Tomai ,  Masato Matsubara

发明人： Kazuyoshi INOUE ,  Shigekazu Tomai ,  Masato Matsubara

IPC分类号： G02F1/136 ,  H01L33/08 ,  H01L21/283 ,  H01L29/786

CPC分类号： H01L29/78696 ,  C04B35/01 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3289 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/77 ,  C23C14/08 ,  C23C14/3414 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  H01L23/53219 ,  H01L23/53247 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.

摘要翻译： 提供了具有透明导电膜的薄膜晶体管基板，其中几乎不产生所得到的蚀刻残留物等; 其制造方法; 以及使用该薄膜晶体管基板的液晶显示器。 一种薄膜晶体管基板，包括透明基板，形成在所述透明基板上的源电极，形成在所述透明基板上的漏电极和形成在所述透明基板上的透明像素电极，其中所述透明像素电极是透明导电膜 其主要由氧化铟制成，并且还包含一种或两种以上选自氧化钨，氧化钼，氧化镍和氧化铌的氧化物，透明像素电极与源电极或漏电极电连接; 其制造方法; 以及使用该薄膜晶体管基板的液晶显示器。

公开(公告)号：US20110311828A1

公开(公告)日：2011-12-22

申请号：US13219827

申请日：2011-08-29

申请人： Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masato MATSUBARA

发明人： Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masato MATSUBARA

IPC分类号： B32B17/06 ,  B32B19/00 ,  B32B15/04

CPC分类号： H01L29/78696 ,  C04B35/01 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3289 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/77 ,  C23C14/08 ,  C23C14/3414 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  H01L23/53219 ,  H01L23/53247 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.

摘要翻译： 提供了具有透明导电膜的薄膜晶体管基板，其中几乎不产生所得到的蚀刻残留物等; 其制造方法; 以及使用该薄膜晶体管基板的液晶显示器。 一种薄膜晶体管基板，包括透明基板，形成在所述透明基板上的源电极，形成在所述透明基板上的漏电极和形成在所述透明基板上的透明像素电极，其中所述透明像素电极是透明导电膜 其主要由氧化铟制成，并且还包含一种或两种以上选自氧化钨，氧化钼，氧化镍和氧化铌的氧化物，透明像素电极与源电极或漏电极电连接; 其制造方法; 以及使用该薄膜晶体管基板的液晶显示器。

公开(公告)号：US20130146452A1

公开(公告)日：2013-06-13

申请号：US13761929

申请日：2013-02-07

申请人： Koki YANO ,  Hirokazu KAWASHIMA ,  Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masashi KASAMI

发明人： Koki YANO ,  Hirokazu KAWASHIMA ,  Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masashi KASAMI

IPC分类号： H01L29/24

CPC分类号： H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/7869

摘要： A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8   (1) In/(In+Ga)=0.59 to 0.99   (2) Zn/(Ga+Zn)=0.29 to 0.99   (3).

摘要翻译： 一种场效应晶体管，其在衬底上至少包含半导体层，所述半导体层的钝化层，源电极，漏电极，栅绝缘膜和栅电极，所述源电极和所述漏电极为 通过所述半导体层连接，所述栅极绝缘膜存在于所述栅电极和所述半导体层之间，所述钝化层至少在所述半导体层的一个表面侧，所述半导体层包括复合氧化物，所述复合氧化物包括In（铟） ，In（In + Zn）= 0.2〜0.8（1）In /（In + Ga）= 0.59〜0.99（2）的Zn（锌）和Ga（镓） ）Zn /（Ga + Zn）= 0.29〜0.99（3）。

公开(公告)号：US20120273777A1

公开(公告)日：2012-11-01

申请号：US13468119

申请日：2012-05-10

申请人： Kazuyoshi INOUE ,  Koki YANO ,  Masashi KASAMI

发明人： Kazuyoshi INOUE ,  Koki YANO ,  Masashi KASAMI

IPC分类号： H01L29/12

CPC分类号： C23C14/3414 ,  C04B35/01 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3409 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/81 ,  C23C14/086 ,  H01L29/66969 ,  H01L29/7869

摘要： A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.

摘要翻译： 包含氧化物烧结体的溅射靶，含有铟（In）的氧化物烧结体和选自钆（Gd），镝（Dy），钬（Ho），铒（Er）和镱（Yb）中的至少一种元素， 并且氧化物烧结体基本上是菱形结构。

公开(公告)号：US20120009725A1

公开(公告)日：2012-01-12

申请号：US13216583

申请日：2011-08-24

申请人： Kazuyoshi INOUE ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka

发明人： Kazuyoshi INOUE ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka

IPC分类号： H01L33/62

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1288

摘要： An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film.

摘要翻译： 本发明的目的是提供一种TFT基板和TFT基板的制造方法，其能够通过减少制造工序中的工序数和提高生产率而大大降低生产成本。 TFT基板包括：基板; 在基板上形成的第一氧化物层; 形成在所述第一氧化物层上方的第二氧化物层，其间插入有沟道部分; 栅极绝缘膜，形成在衬底上方，第一氧化物层和第二氧化物层; 形成在栅极绝缘膜上方的栅电极和栅极线。

公开(公告)号：US20070228575A1

公开(公告)日：2007-10-04

申请号：US11758279

申请日：2007-06-05

申请人： Kazuyoshi INOUE

发明人： Kazuyoshi INOUE

IPC分类号： H01L23/49

CPC分类号： C22C5/08 ,  C22C5/06 ,  C22C9/00 ,  C22C9/06 ,  G02F2001/136295 ,  H01B1/02 ,  H01B1/026 ,  H01L21/2855 ,  H01L21/86 ,  H01L23/49866 ,  H01L23/53247 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A wiring material for TFT-LCD which comprises an Ag alloy containing Ag and Zr as essential components and further one or more metals selected from the group consisting of Au, Ni, Co and Al; and a wiring material which comprises a Cu alloy comprising Au and/or Co and Cu, wherein the alloy has a Cu content of 80 to 99.5 wt % and a sum of a Au (or Cu) on a glass substrate or a silicon wafer by the sputtering method has exhibited satisfactorily low electric resistance and also satisfactorily high adhesion strength to the substrate or the wafer.

摘要翻译： 一种用于TFT-LCD的布线材料，其包含含有Ag和Zr作为必要成分的Ag合金，还包括一种或多种选自Au，Ni，Co和Al的金属; 以及包含Au和/或Co和Cu的Cu合金的配线材料，其中，所述合金的Cu含量为80〜99.5重量％，玻璃基板或硅晶片上的Au（或Cu）的和为 溅射法表现出令人满意的低电阻，并且对基板或晶片的粘附强度也令人满意。

公开(公告)号：US20100285632A1

公开(公告)日：2010-11-11

申请号：US12839922

申请日：2010-07-20

申请人： Kazuyoshi INOUE ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka

发明人： Kazuyoshi INOUE ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka

IPC分类号： H01L21/44

CPC分类号： H01L29/7869 ,  G02F1/136286 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/50 ,  G02F2203/09 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/45

摘要： An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.