公开(公告)号：US20120043630A1

公开(公告)日：2012-02-23

申请号：US13181742

申请日：2011-07-13

申请人： Kazuyuki OMORI ,  Kenichi Mori ,  Naohito Suzumura

发明人： Kazuyuki OMORI ,  Kenichi Mori ,  Naohito Suzumura

IPC分类号： H01L29/82 ,  H01L21/8246

CPC分类号： H01L27/228 ,  H01L23/5226 ,  H01L23/53233 ,  H01L23/53238 ,  H01L43/08 ,  H01L2224/16145 ,  H01L2924/00011 ,  H01L2924/01015 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/01004

摘要： In MRAM, a write wiring clad in a ferromagnetic film has been used to reduce a write current or avoid disturbances. Besides, a CuAl wiring obtained by adding a trace of Al to a Cu wiring has been used widely to secure reliability of a high reliability product. There is a high possibility of MRAM being mounted in high reliability products so that reliability is important. Clad wiring however increases the resistance of the CuAl wiring, which is originally high, so that using both may fail to satisfy the specification of the wiring resistance. In the semiconductor device of the invention having plural copper-embedded wiring layers, copper wiring films of plural copper-embedded clad wirings configuring a memory cell matrix region of MRAM are made of relatively pure copper, while a CuAl wiring film is used as copper wiring films of copper-embedded non-clad wirings below these wiring layers.

摘要翻译： 在MRAM中，已经使用包裹在铁磁膜中的写入布线来减小写入电流或避免干扰。 此外，通过在Cu布线中添加痕量的Al而获得的CuAl布线被广泛地用于确保高可靠性产品的可靠性。 在高可靠性产品中安装MRAM的可能性很大，因此可靠性很重要。 然而，包层线路增加了原来高的CuAl布线的电阻，因此使用两者可能不能满足布线电阻的规格。 在具有多个铜嵌入布线层的本发明的半导体器件中，构成MRAM的存储单元矩阵区域的多个嵌入铜包布线的铜布线膜由相对纯的铜制成，而CuAl布线膜用作铜布线 在这些布线层下面的铜嵌入的非覆盖布线的膜。

公开(公告)号：US08492808B2

公开(公告)日：2013-07-23

申请号：US13181742

申请日：2011-07-13

申请人： Kazuyuki Omori ,  Kenichi Mori ,  Naohito Suzumura

发明人： Kazuyuki Omori ,  Kenichi Mori ,  Naohito Suzumura

IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L27/228 ,  H01L23/5226 ,  H01L23/53233 ,  H01L23/53238 ,  H01L43/08 ,  H01L2224/16145 ,  H01L2924/00011 ,  H01L2924/01015 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/01004

摘要： In MRAM, a write wiring clad in a ferromagnetic film has been used to reduce a write current or avoid disturbances. Besides, a CuAl wiring obtained by adding a trace of Al to a Cu wiring has been used widely to secure reliability of a high reliability product. There is a high possibility of MRAM being mounted in high reliability products so that reliability is important. Clad wiring however increases the resistance of the CuAl wiring, which is originally high, so that using both may fail to satisfy the specification of the wiring resistance. In the semiconductor device of the invention having plural copper-embedded wiring layers, copper wiring films of plural copper-embedded clad wirings configuring a memory cell matrix region of MRAM are made of relatively pure copper, while a CuAl wiring film is used as copper wiring films of copper-embedded non-clad wirings below these wiring layers.

摘要翻译： 在MRAM中，已经使用包裹在铁磁膜中的写入布线来减小写入电流或避免干扰。 此外，通过在Cu布线中添加痕量的Al而获得的CuAl布线被广泛地用于确保高可靠性产品的可靠性。 在高可靠性产品中安装MRAM的可能性很大，因此可靠性很重要。 然而，包层线路增加了原来高的CuAl布线的电阻，因此使用两者可能不能满足布线电阻的规格。 在具有多个铜嵌入布线层的本发明的半导体器件中，构成MRAM的存储单元矩阵区域的多个嵌入铜包布线的铜布线膜由相对纯的铜制成，而CuAl布线膜用作铜布线 在这些布线层下面的铜嵌入的非覆盖布线的膜。

公开(公告)号：US20110057275A1

公开(公告)日：2011-03-10

申请号：US12874894

申请日：2010-09-02

申请人： Mikio TSUJIUCHI ,  Yosuke Takeuchi ,  Kazuyuki Omori ,  Kenichi Mori

发明人： Mikio TSUJIUCHI ,  Yosuke Takeuchi ,  Kazuyuki Omori ,  Kenichi Mori

IPC分类号： H01L29/66 ,  H01L21/04

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  H01L29/7833

摘要： To provide a semiconductor device capable of write operation to a selected magnetoresistive element without causing a malfunction of a non-selected magnetoresistive element and a manufacturing method of this semiconductor device. The semiconductor device includes a magnetic storage element having a magnetization free layer whose magnetization direction is made variable and formed over a lead interconnect and a digit line located below the magnetic storage element, extending in a first direction, and capable of changing the magnetization state of the magnetization free layer by the magnetic field generated. The digit line includes an interconnect body portion and a cladding layer covering therewith the bottom surface and the side surface of the interconnect body portion and opened upward. The cladding layer includes a sidewall portion covering therewith the side surface of the interconnect body portion and a bottom wall portion covering therewith the bottom surface of the interconnect body portion. The thickness of the sidewall portion is made greater than that of the bottom wall portion.

摘要翻译： 提供能够对选定的磁阻元件进行写入操作而不引起未选择的磁阻元件的故障的半导体器件和该半导体器件的制造方法。 半导体器件包括具有磁化自由层的磁存储元件，该磁化自由层的磁化方向是可变的，并且形成在引线互连和位于磁存储元件下方的位于第一方向上的数字线，并且能够改变磁化状态 磁化自由层由磁场产生。 数字线包括互连主体部分和覆盖互连体部分的底表面和侧表面并向上敞开的覆层。 包覆层包括覆盖互连主体部分的侧表面的侧壁部分和覆盖互连主体部分的底表面的底壁部分。 侧壁部分的厚度大于底壁部分的厚度。

公开(公告)号：US08227880B2

公开(公告)日：2012-07-24

申请号：US12874894

申请日：2010-09-02

申请人： Mikio Tsujiuchi ,  Yosuke Takeuchi ,  Kazuyuki Omori ,  Kenichi Mori

发明人： Mikio Tsujiuchi ,  Yosuke Takeuchi ,  Kazuyuki Omori ,  Kenichi Mori

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  H01L29/7833

摘要： To provide a semiconductor device capable of write operation to a selected magnetoresistive element without causing a malfunction of a non-selected magnetoresistive element and a manufacturing method of this semiconductor device. The semiconductor device includes a magnetic storage element having a magnetization free layer whose magnetization direction is made variable and formed over a lead interconnect and a digit line located below the magnetic storage element, extending in a first direction, and capable of changing the magnetization state of the magnetization free layer by the magnetic field generated. The digit line includes an interconnect body portion and a cladding layer covering therewith the bottom surface and the side surface of the interconnect body portion and opened upward. The cladding layer includes a sidewall portion covering therewith the side surface of the interconnect body portion and a bottom wall portion covering therewith the bottom surface of the interconnect body portion. The thickness of the sidewall portion is made greater than that of the bottom wall portion.

摘要翻译： 提供能够对选定的磁阻元件进行写入操作而不引起未选择的磁阻元件的故障的半导体器件和该半导体器件的制造方法。 半导体器件包括具有磁化自由层的磁存储元件，该磁化自由层的磁化方向是可变的，并且形成在引线互连和位于磁存储元件下方的位于第一方向上的数字线，并且能够改变磁化状态 磁化自由层由磁场产生。 数字线包括互连主体部分和覆盖互连体部分的底表面和侧表面并向上敞开的覆层。 包覆层包括覆盖互连主体部分的侧表面的侧壁部分和覆盖互连主体部分的底表面的底壁部分。 侧壁部分的厚度大于底壁部分的厚度。

公开(公告)号：US08125085B2

公开(公告)日：2012-02-28

申请号：US12481234

申请日：2009-06-09

申请人： Kazuyoshi Maekawa ,  Kenichi Mori ,  Kazuyuki Omori ,  Yuki Koyama

发明人： Kazuyoshi Maekawa ,  Kenichi Mori ,  Kazuyuki Omori ,  Yuki Koyama

IPC分类号： H01L23/48 ,  H01L29/80 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/2855 ,  H01L21/76805 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76888 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an interlayer film formed over a semiconductor substrate. A groove is formed in the interlayer film. A wiring formed in the groove is a copper alloy including copper and a metal element. An oxide layer of the metal element is formed over the surface of the wiring. The oxide layer is formed in a first region along a grain boundary of a copper crystal and a second region surrounded by the grain boundary, over the surface of the wiring. The oxide layer formed in the first region has a thickness greater than that of the oxide layer formed in the second region.

摘要翻译： 半导体器件包括形成在半导体衬底上的层间膜。 在中间膜中形成凹槽。 形成在槽中的布线是包括铜和金属元素的铜合金。 金属元件的氧化物层形成在布线的表面上。 在布线的表面上，沿着铜晶的晶界的第一区域和由晶界包围的第二区域形成氧化物层。 形成在第一区域中的氧化物层的厚度大于在第二区域中形成的氧化物层的厚度。

公开(公告)号：US20100044864A1

公开(公告)日：2010-02-25

申请号：US12481234

申请日：2009-06-09

申请人： Kazuyoshi MAEKAWA ,  Kenichi Mori ,  Kazuyuki Omori ,  Yuki Koyama

发明人： Kazuyoshi MAEKAWA ,  Kenichi Mori ,  Kazuyuki Omori ,  Yuki Koyama

IPC分类号： H01L23/48 ,  H01L21/3205

CPC分类号： H01L21/2855 ,  H01L21/76805 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76888 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention aims at providing a method of manufacturing a semiconductor device capable of suppressing metal diffusion from the upper face of wiring.In the present invention, a copper seed film containing copper and a first metal element is formed in a groove formed in a first interlayer film over a semiconductor substrate. After that, a copper plating treatment is performed. After that, a first heat treatment is performed in a first atmosphere in which the copper layer is not oxidized. Then, an excess metal layer of copper alloy is removed and copper alloy wiring is formed in the groove. After that, a second heat treatment is performed in a second atmosphere containing oxygen to form an oxide layer being the oxide of the first metal element over the surface of the copper alloy wiring.

摘要翻译： 本发明的目的在于提供一种能够抑制从布线的上表面的金属扩散的半导体器件的制造方法。 在本发明中，在半导体衬底上形成在第一层间膜中的沟槽中形成含有铜和第一金属元素的铜籽晶膜。 之后，进行镀铜处理。 之后，在铜层未被氧化的第一气氛中进行第一热处理。 然后，除去铜合金的过量金属层，并在槽内形成铜合金布线。 之后，在包含氧的第二气氛中进行第二热处理，以在铜合金布线的表面上形成作为第一金属元件的氧化物的氧化物层。

公开(公告)号：US09959577B1

公开(公告)日：2018-05-01

申请号：US11529039

申请日：2006-09-28

申请人： Kenichi Mori

发明人： Kenichi Mori

IPC分类号： G06Q40/00

CPC分类号： G06Q40/123

摘要： A document capture system may automatically capture documents and/or financial information for a user. The document capture system may capture and save documents a user views in a web browser. A user may visit various web sites to view financial data and a document capture plug-in module installed in the web browser may capture or save the viewed document. The document capture system may capture financial data while the user is visiting web sites normally—that is, not just when the user if visiting them particularly to collect financial data. The document capture system may be configured to automatically detect when the user views certain documents and may be configured to continually monitor the user's web activity in order to capture financial documents whenever the user visits certain sites. The document capture system may include a list of URLs representing web sites or documents that should be automatically captured.

公开(公告)号：US20140260840A1

公开(公告)日：2014-09-18

申请号：US14175176

申请日：2014-02-07

申请人： Kenichi Mori

发明人： Kenichi Mori

IPC分类号： B23B5/16

CPC分类号： B23B5/163 ,  B23B3/26 ,  Y10T82/22

摘要： In a machining apparatus, complete control of the movement, stopping, speed and displacement of a tool mounted on a rotating face plate is achieved by using a first motor to cause rotation of the face plate, causing the first motor to rotate a ring gear along with the face plate, controlling the relative speeds of the face plate and the ring gear by means of a second motor and a differential mechanism, and moving the tool on the face plate in response to a difference in the rotational speeds of the face plate and the ring gear.

摘要翻译： 在加工装置中，通过使用第一马达来引起面板的旋转来实现对安装在旋转面板上的工具的运动，停止，速度和位移的完全控制，使得第一马达沿着环形齿轮旋转 与面板一起，通过第二电动机和差速机构控制面板和环形齿轮的相对速度，并且响应于面板和第二电动机的转速差而在面板上移动工具 齿圈。

公开(公告)号：US08801559B2

公开(公告)日：2014-08-12

申请号：US13808744

申请日：2011-06-30

申请人： Yusuke Ogata ,  Yoshihiro Mizuno ,  Haruhiko Shibata ,  Hidenobu Yamaguchi ,  Fumitake Suzuki ,  Masahiko Suzuki ,  Masashi Hattori ,  Naoki Okoshi ,  Kenichi Mori ,  Masahiro Ito

发明人： Yusuke Ogata ,  Yoshihiro Mizuno ,  Haruhiko Shibata ,  Hidenobu Yamaguchi ,  Fumitake Suzuki ,  Masahiko Suzuki ,  Masashi Hattori ,  Naoki Okoshi ,  Kenichi Mori ,  Masahiro Ito

IPC分类号： F16H1/32

CPC分类号： F01D25/18 ,  F04C2/102 ,  F04C14/08 ,  F04C14/10 ,  F04C15/06 ,  F04C2270/18 ,  F16H61/0025 ,  F16H61/66272 ,  F16H2037/026 ,  F16H2061/0037

摘要： A vehicular power transmitting system including an oil pump constructed to sufficiently reduce a required drive torque. A high-pressure-port discharge amount of first and second high-pressure passages of the oil pump is determined such that an amount of consumption of working oil of relatively high pressure can be afforded only by the high-pressure-port discharge amount, during steady-state running of a vehicle in which engine speed is not lower than a predetermined threshold value corresponding to a predetermined lowest target input shaft speed of a continuously variable transmission for its shifting control. The pressure of the working oil discharged from first and second low-pressure discharge passages is kept at a predetermined low level, and the required drive torque of the oil pump is sufficiently reduced.

摘要翻译： 一种包括油泵的车辆动力传递系统，其被构造成足以减小所需的驱动转矩。 确定油泵的第一高压通路和第二高压通路的高压口排出量，使得仅在高压口排出量的情况下，能够提供相对高压的工作油的消耗量 发动机转速不低于对应于用于变速控制的无级变速器的预定最低目标输入轴转速的预定阈值的车辆的稳态运行。 将从第一低压排出通路和第二低压排出通路排出的工作油的压力保持在预定的低水平，并且充分降低油泵所需的驱动转矩。

公开(公告)号：US20130170953A1

公开(公告)日：2013-07-04

申请号：US13808744

申请日：2011-06-30

申请人： Yusuke Ogata ,  Yoshihiro Mizuno ,  Haruhiko Shibata ,  Hidenobu Yamaguchi ,  Fumitake Suzuki ,  Masahiko Suzuki ,  Masashi Hattori ,  Naoki Okoshi ,  Kenichi Mori ,  Masahiro Ito

发明人： Yusuke Ogata ,  Yoshihiro Mizuno ,  Haruhiko Shibata ,  Hidenobu Yamaguchi ,  Fumitake Suzuki ,  Masahiko Suzuki ,  Masashi Hattori ,  Naoki Okoshi ,  Kenichi Mori ,  Masahiro Ito

IPC分类号： F01D25/18

CPC分类号： F01D25/18 ,  F04C2/102 ,  F04C14/08 ,  F04C14/10 ,  F04C15/06 ,  F04C2270/18 ,  F16H61/0025 ,  F16H61/66272 ,  F16H2037/026 ,  F16H2061/0037

摘要： A vehicular power transmitting system including an oil pump constructed to sufficiently reduce a required drive torque. A high-pressure-port discharge amount of first and second high-pressure passages of the oil pump is determined such that an amount of consumption of working oil of relatively high pressure can be afforded only by the high-pressure-port discharge amount, during steady-state running of a vehicle in which engine speed is not lower than a predetermined threshold value corresponding to a predetermined lowest target input shaft speed of a continuously variable transmission for its shifting control. The pressure of the working oil discharged from first and second low-pressure discharge passages is kept at a predetermined low level, and the required drive torque of the oil pump is sufficiently reduced.

摘要翻译： 一种包括油泵的车辆动力传递系统，其被构造成足以减小所需的驱动转矩。 确定油泵的第一高压通路和第二高压通路的高压口排出量，使得仅在高压口排出量的情况下，能够提供相对高压的工作油的消耗量 发动机转速不低于对应于用于变速控制的无级变速器的预定最低目标输入轴转速的预定阈值的车辆的稳态运行。 将从第一低压排出通路和第二低压排出通路排出的工作油的压力保持在预定的低水平，并且充分降低油泵所需的驱动转矩。