公开(公告)号：US06576063B2

公开(公告)日：2003-06-10

申请号：US09768663

申请日：2001-01-24

申请人： Kazuyuki Toyoda ,  Osamu Kasahara ,  Tsutomu Tanaka ,  Mamoru Sueyoshi ,  Nobuhito Shima ,  Masanori Sakai

发明人： Kazuyuki Toyoda ,  Osamu Kasahara ,  Tsutomu Tanaka ,  Mamoru Sueyoshi ,  Nobuhito Shima ,  Masanori Sakai

IPC分类号： C23C1600

CPC分类号： C23C16/45563 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/67069

摘要： An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.

公开(公告)号：US07033937B2

公开(公告)日：2006-04-25

申请号：US10342011

申请日：2003-01-14

申请人： Kazuyuki Toyoda ,  Osamu Kasahara ,  Tsutomu Tanaka ,  Mamoru Sueyoshi ,  Nobuhito Shima ,  Masanori Sakai

发明人： Kazuyuki Toyoda ,  Osamu Kasahara ,  Tsutomu Tanaka ,  Mamoru Sueyoshi ,  Nobuhito Shima ,  Masanori Sakai

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： C23C16/45563 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/67069

摘要： An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.

公开(公告)号：US08261692B2

公开(公告)日：2012-09-11

申请号：US12823001

申请日：2010-06-24

申请人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

发明人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

IPC分类号： C23C16/50 ,  C23C16/509 ,  C23C16/503 ,  C23C16/505 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45546 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/3244

摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

摘要翻译： 基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室， 缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

公开(公告)号：US20080251015A1

公开(公告)日：2008-10-16

申请号：US11933190

申请日：2007-10-31

申请人： Tadashi KONTANI ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

发明人： Tadashi KONTANI ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

IPC分类号： C23C16/455 ,  C23C16/54

CPC分类号： C23C16/45546 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/3244

摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

公开(公告)号：US20100263593A1

公开(公告)日：2010-10-21

申请号：US12823001

申请日：2010-06-24

申请人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

发明人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

IPC分类号： C23C16/50 ,  C23C16/00

CPC分类号： C23C16/45546 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/3244

摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

摘要翻译： 基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室， 缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

公开(公告)号：US20080251014A1

公开(公告)日：2008-10-16

申请号：US11933169

申请日：2007-10-31

申请人： Tadashi KONTANI ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

发明人： Tadashi KONTANI ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

IPC分类号： C23C16/448 ,  C23C16/452 ,  C23C16/54

CPC分类号： C23C16/45546 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/3244

摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

摘要翻译： 基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室， 缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

公开(公告)号：US08047158B2

公开(公告)日：2011-11-01

申请号：US11933169

申请日：2007-10-31

申请人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

发明人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

IPC分类号： C23C16/509 ,  C23C16/505 ,  C23C16/503 ,  C23C16/50 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45546 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/3244

摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

公开(公告)号：US07900580B2

公开(公告)日：2011-03-08

申请号：US11933208

申请日：2007-10-31

申请人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

发明人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

IPC分类号： C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45546 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/3244

摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

摘要翻译： 基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室， 缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

公开(公告)号：US20100258530A1

公开(公告)日：2010-10-14

申请号：US12820893

申请日：2010-06-22

申请人： Kazuyuki TOYODA ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Yoshikazu Konno ,  Motonari Takebayashi ,  Takaaki Noda ,  Norikazu Mizuno

发明人： Kazuyuki TOYODA ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Yoshikazu Konno ,  Motonari Takebayashi ,  Takaaki Noda ,  Norikazu Mizuno

IPC分类号： C23F1/00 ,  C23F1/08 ,  B05C11/00 ,  C23C16/52

CPC分类号： H01L21/67253 ,  C23C16/50 ,  H01F19/08 ,  H01J37/32082 ,  H01J37/32174

摘要： A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insulating transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.

摘要翻译： 基板处理器能够通过组合在整个处理室中产生的远程等离子体和等离子体的优点来实现适当的处理。 基板处理器包括安装在处理空间（1）周围并接地的导电构件（10）和安装在导电构件（10）内部的一对电极（4）。 绝缘变压器（7）的初级线圈连接到高频电源单元（14），次级线圈连接到电极（4）。 开关（13）连接到将次级线圈连接到电极（4）的连接线。 通过使用开关（13）设置/切断线路与地球的连接，可以改变在处理空间（1）中产生等离子体的区域。

公开(公告)号：US20060260544A1

公开(公告)日：2006-11-23

申请号：US10547320

申请日：2004-03-04

申请人： Kazuyuki Toyoda ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Yoshikazu Konno ,  Motonari Takebayashi ,  Takaaki Noda ,  Norikazu Mizuno

发明人： Kazuyuki Toyoda ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Yoshikazu Konno ,  Motonari Takebayashi ,  Takaaki Noda ,  Norikazu Mizuno

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： H01L21/67253 ,  C23C16/50 ,  H01F19/08 ,  H01J37/32082 ,  H01J37/32174

摘要： A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insularing transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.

摘要翻译： 基板处理器能够通过组合在整个处理室中产生的远程等离子体和等离子体的优点来实现适当的处理。 基板处理器包括安装在处理空间（1）周围并接地的导电构件（10）和安装在导电构件（10）内部的一对电极（4）。 岛状变压器（7）的初级线圈连接到高频电源单元（14），次级线圈连接到电极（4）。 开关（13）连接到将次级线圈连接到电极（4）的连接线。 通过使用开关（13）设置/切断线路与地球的连接，可以改变在处理空间（1）中产生等离子体的区域。